1 S. C.

Lin, EE National Chin-Yi University of Science and Technology

Sedra/Smith
Microelectronic Circuits 6/E
Chapter 4-A
Bipolar Junction Transistors (BJTs)
2 S. C. Lin, EE National Chin-Yi University of Technology
Outline
4.1 Device Structure and Physical Operation
4.2 CurrentVoltage Characteristics
4.3 BJT Circuits at DC
4.4 Applying the BJT in Amplifier Design
4.5 Small-Signal Operation and Models
4.6 Basic BJT Amplifier Configurations
4.7 Biasing in BJT Amplifier Circuits
4.8 Discrete-Circuit BJT Amplifiers
4.9 Transistor Breakdown and Temperature Effects
3 S. C. Lin, EE National Chin-Yi University of Technology
4.1 Device structure and physical operation
Emitter and collector regions having identical physical dimensions
(C > E > B) and doping concentrations (E > C > B)
4 S. C. Lin, EE National Chin-Yi University of Technology
Forward Forward Saturation
Forward Reverse Reverse active
Reverse Forward Active
Reverse Reverse Cutoff
CBJ EBJ Mode
BJT modes operation
5 S. C. Lin, EE National Chin-Yi University of Technology
Figure 5.3 Current flow in an npn transistor biased to operate in
the active mode. (Reverse current components due to drift of
thermally generated minority carriers are not shown.)
6 S. C. Lin, EE National Chin-Yi University of Technology
Figure 5.4 Profiles of minority-carrier concentrations in the base and
in the emitter of an npn transistor operating in the active mode: v
BE
> 0
and v
CB
> 0.
/ 3 0.7/ 0.025
(0) 0
10 highly
BE T
V V
p p
n n e e = =
/ 3 1/ 0.025
( ) 0
10 0
CB T
V V
p w p
n n e e

= = ~
7 S. C. Lin, EE National Chin-Yi University of Technology
This electron diffusion current as foll
(
(
ows :
4.2
) 0)
)
(
n
p p
n E n E n
dn x n
I A qD A q
dx W
I
D
| |
= =
|
\ .
/
0
/
0
According to the law of the junction (sec. p.61, eq.1.57)
the concentration (0) will be propotiona
(0)
l to

where is
(4.1)

BE T
BE T
v V
p p
p
p
v V
n
n
n
n e
e
=
the thermal- equilibrium value of the
minority-carrier (electron) concentration in the base region
is the thermal-voltage ( 25mV)
T T
V V ~


where

is the cross-sectional area of B-E junction,
is the magnitude of the base,
is the electron diffusivity in the base,
is the effectiv e width of the base,
E
n
A
q
D
W
flows from right to left(in the negtive dir ection of )
n
I x
(0)
p
n
W
p
n
8 S. C. Lin, EE National Chin-Yi University of Technology
/
0
2
2
/
0
0
(0)

where , subtituting
(4.

4 )
BE T
BE T
p
i
s
v V
p p
v V
C n E
E n p
n E n s
i
s E n
A
A
n
n
I A qD n
n n e
i I A qD A qD I e
W W
n
I A qD
N W
w N
= = = =
= =
=
The Collector Current
12 18
The is inversely propotional to the base width W and is directly
propotional to the area of the EBJ.
Typically is in the range of 10 A to 10 A
(depending on the size of the dev
s
s
I
I



2
o
ice)
The is propotional to , it is a strong function of temperature,
approximately doubling for every 5 rise in temperature.
s i
I n
C

9 S. C. Lin, EE National Chin-Yi University of Technology
The Base Current
1
2
2
/ / /
is the hole diffusion length in the emitter
BE T BE T BE T
s
E p i p A v V v V v V
n E i
p A
s
D p
B
n
D p A D p n
A
n
p
n
I
A
i
L
D N W
N W D
A qD n D N W
D A qn
e e e
N L
D N W
I
N L N L D N W D
=

=

2
2
/
0 0
, is minority-carrier lifetime,
is replenished by electron injection from the emitter

subtituting (0) and
1
, give
(0) .
s
2

BE T
n E
n
B b
b
n
v V
i E
p p
p
p n
A
Q
i
Q
n A
n n e n Q
Q
N
A q n W =
=

= = =
t
t
2
2
/
2
/ /
2
/
2 2 2
1
2
2
1
2
1
2
BE T
BE T BE T
s
BE T
v V
E i
B
A b
v V
i
A
v V v V
E i n n E i
A n b
I
n b A
qWn
e
N
A qW n D A q D A qn W
N W D
Wn
i e e
N D
e
N W
= = =

t t t
10 S. C. Lin, EE National Chin-Yi University of Technology
1 2
2
/
/
2

1
where
(4.6

1
2
The is called the common- emitter

2
c
1
)
BE
E
T
B T
B B B
p v V
A
s
n D p
v V
C s
B
n b
p
A
n D p n b
i
i i i
D
N W W
D N L D
D
N W W
I
i
e
D
e
D N L
i
| |
= +
|
|
\ .
| |
= =
= +
=
| |
+
|
|
\ .
|
\ .
|
t
|
|
t
|
urrent gain,
For moden npn transistor, is in the range 50 to 200,
but it can be as high as1000 for special devices
|
11 S. C. Lin, EE National Chin-Yi University of Technology
The Emitter current
/
/


(4.9)
(4.1
The
1 1
, =
1 1
is co

mmon-base current gain, that is less than
2)
but very close
B
E
E
B
T
T
E B C
v V
C s
v V
s
E
i
i
i i i
i i e
e
= +
+ +
= =
=
=
+

| |
| |
| o
o |
|
o
o
o
to unity.
12 S. C. Lin, EE National Chin-Yi University of Technology
Figure 5.5 Large-signal equivalent-circuit models of the npn BJT
operating in the forward active mode.
13 S. C. Lin, EE National Chin-Yi University of Technology
Figure 5.7 Model for the npn transistor when operated in the reverse
active mode (i.e., with the CBJ forward biased and the EBJ reverse
biased).
14 S. C. Lin, EE National Chin-Yi University of Technology
Figure The Ebers-Moll (EM) model of the npn transistor.
Ebers-Moll (EM) Model

E DE R DC
C DC F DE
B E C
i i i
i i i
i i i
=
= +
=
o
o
E
i
B
i
C
i
DE
i
DC
i
R DC
i o
F DE
i o
15 S. C. Lin, EE National Chin-Yi University of Technology
C
D collector-base junction The diode represents the
the scale current
,
is
SC
I
E
D mitter-base junctio The diode represents the e
the scale current is
n,

SE
I
SC SE
I I >>
is in the range of 0.01 to 0.5
R
o
R
is in the range of 0.01 to 0.1 |
F SE R SC S
I I I = = o o
16 S. C. Lin, EE National Chin-Yi University of Technology
( ) ( )
( ) ( )
/ /
/ /
The transistor terminal current equtions:
1 1 (a)
(c
1 1
)

( )

b


BE T BE T
BE T BE T
v V v V
S
DE SE
E DE R DC
C DC F D
F
v V v V
S
DC
R
E
SC
I
i I e e
I
i I e
i i i
i
e
i i
= =
=
=
=

+
=
o
o
o
o
(d)
(1 ) (1 )
Subtituting (a) and (b) into (c),(d)and
(e)
(e), we have
B E C F DE R DC
i i i i i = = + o o
17 S. C. Lin, EE National Chin-Yi University of Technology
( ) ( )
( ) ( )
( ) ( )
/ /
/ /
/ /
1 1
1 1
1 1
where ,
1 1
BC T BE T
BC T BE T
BC T BE T
v V v V
S
E S
F
v V v V
F R
F
S
C S
R
v V v V
S S
B
F
F R
R
R
I
i e I e
I
i I e e
I I
i e e
=
= =

=
=

+
o
o
|
o
| |
o
|
o
o
18 S. C. Lin, EE National Chin-Yi University of Technology
Application of the EM model
( )
( )
( )
/
/
0
/
/
0
/
/
/
/
(A) Opoerating in the forard avtive mode
1 1
1
1
1
1
1
1 1
BE T
BE T
BC T
BC T
B
BE T
BE T
B T E C T
v V
S
E S
F
v V
S
C S
v V
v V
R
v V
S
v V
S
S
F
S
F
v V
S
R
v V
B
F
S
R
I
i e I
I
i I e
I I
e
i
e
e
I
I I
e
e I
e
| |
~ +

| |
=
|
|
\ .
| |
=
|
|
\ .
=
|
\ .
| |
~ +
|
\

o
o
| |
o o
o
0
/
1 1
1
BE T
v V
S
S
F F R
I
e I
| |

|
|
\
| |
~

\
.
|
.

| | |
19 S. C. Lin, EE National Chin-Yi University of Technology
4.1.4 Operation in the Saturation Mode
B
I
forced B
I |
BC
V
BE
V
sat
CE
V
CC
V
/
/
forced
1
1
1
BE T
BC T
v V
v V
C B
R
R
R
e
e
i I
>>
>>
=
=
+
|
|
o
|
20 S. C. Lin, EE National Chin-Yi University of Technology
( ) ( )
/ /
forced f
/ /
/ /
fo
o
rced
rced
1
1 1
The EM expression for
T
1
1 1
(a
he EM expres
)
sion
BC T BE T
BC T B
v V v
E T
V
BE T BC T
S S
R
B
I
R
v V
X Y
v V
C S S
R
v V v V
R
C S S
R
R
I
B
e
C
e
R
i I e I e
i I
X
i Y
e I e
i X
i
Y
~ ~
+
=
+

=
+
= =


o
|
|
|
|
|
|
| | |
fo r (b)
B
F
B
R
i
X Y
i =
| |
21 S. C. Lin, EE National Chin-Yi University of Technology
forced forced
( ) ( )
1


R
R F R
F forced
F forced
a b
X X Y
Y
=
+
=

|
| | | | |
| |
| |
1

R forced
R forced
X
+ +
=
| |
| |
/
( ) / /
/

1
(1 )

) (
BE T
BE BC T CE T
BC T
R forced
R forced F
R
F forced
F forced R
F
v V
v v V v V
S
v V
S
Y
X
Y
X I e
e e
Y I e

+ +
+ +
= =

= = =
| |
| | |
|
| |
| | |
|
22 S. C. Lin, EE National Chin-Yi University of Technology
( )
( )
1
ln
R forced F
CE sat T
v V
+ +
=
| | |
( )
F forced R
| | |
1
F

|
1
R
F R
|
| |
( )
1 (1 ) /
ln
1 ( /

)
forced R
CE sat T
forced F
v V
( + +

=

| |
| |
The for the case ( ) 50, 0. and 1
CE F R
V sat = = | |
60 123 147 166 191 211 235
0 10 20 30 40 45 48 50
( ) CE sat
v
forced
|
23 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.8 The i
C
v
CB
characteristic of an npn transistor fed with a
constant emitter current I
E
. The transistor enters the saturation mode of
operation for v
CB
< 0.4 V, and the collector current diminishes.
24 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.10 Current flow in a pnp transistor biased to operate in the
active mode.
25 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.11 Large-signal model for the pnp transistor operating in the
active mode.
26 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.13 Voltage polarities and current flow in transistors biased in
the active mode.
4.2 CurrentVoltage Characteristics
4.2.1 Circuit symbols and Conventions
27 S. C. Lin, EE National Chin-Yi University of Technology
The constant n
The constant , its value is between 1 and 2.
For modern BJT the constant is close to unity except in special cases:
At high currents, the relationship exhibits a value for


that is cl
-
s

o

C BE
n
n
n
i v
e to 2 .
At low currents, the relationship shows a value for
approxima
-
tely 2 .

B BE
i v
n

0
The current is the reverse current flowing from collector
to base with the emitter open-circuited.
The current depends strongly on temperature,
approximately doubling for


10 rise
CBO
CBO
I
I
C

2 1
( ) /10
2 1
.
2
T T
CBO CBO
I I

=
( )
CBO
I
The Collector-Base Reverse Current
28 S. C. Lin, EE National Chin-Yi University of Technology
The transistor in the circuit of Fig (a) has 100 and
exhibits of 0.7V at 1mA. Design the circuit so that a current
of 2mA flows through the collector and a voltage of +5V
BE C
v i
| =
=
appear at
the collector.
2
1
10V

2mA
0.7 ln 0.717V
0.717V
100 0.99
/ 2mA/ 0.99 2.02mA
( 15
5k
7.07

k
)
Sol :
C
BE T
E
E C
E
E
E
R
I
V V
I
V
I I
V V
R
I
= =
| |
= + =
|
\ .
=
= =
= = =

= =
| o
o

Example 4.2
29 S. C. Lin, EE National Chin-Yi University of Technology
Figure (a) The iCvBE characteristic for an npn transistor.
(b) Effect of temperature on the i
C
v
BE
characteristic. At a constant
emitter current (broken line), v
BE
changes by 2 mV/C.
/
BE T
v V
C S
T T C
i I e
V T T V i
=
| | +
4.4.2 Graphical Representation of Transistor Characteristic
30 S. C. Lin, EE National Chin-Yi University of Technology
1 o
5 o
4 o
3 o
2 o
0
2 4 6 8 10 12
1mA
E
i =
2mA
3mA
4mA
5mA
(V)
CB
v
(mA)
C
i
/
BE T
v V
C S
i I e =
4.2.3 Dependence of on the Collector VoltageThe Early effect
c
i
31 S. C. Lin, EE National Chin-Yi University of Technology
(1) increases with increasing
(2) increases with increasing re
Early ef
verse co
fect has three con
llector voltage.
(3) punch through
sequences:
CB
C
V
I
o
o EB
V V
EB
V
CB
V
o
V
'
B
W
W
B
W
32 S. C. Lin, EE National Chin-Yi University of Technology
'
C
i
=
C C C
A CE CE
C CE C CE
i i i
V v v
i v i v
'
+ A A
+
'
+ A
C A C CE
i V i v = A + A
CE
C C
A
v
i i
V
'
A =
CE
v
C
i A
33 S. C. Lin, EE National Chin-Yi University of Technology
/ '
' ' '

The collector current ( operation in the active mode)
neglected the Early effect:
includ

=

ing the Early e

ff
=
ect

:
BE T
v V
C S
CE
C C C C C
A
v
S
i I e
v
i i i i i
V
I e
=
= + A +
/
1+
BE T
V
CE
A
v
V
| |
|
\ .
1
tan
The nonzero slopeof the straight line indicates
that the output resistance looking into the collector
is not infinite. Rather, it is finite and defined by
BE
C C
C A C
o
CE
v o s
E
c n t
i
V
v
v
i V
r

(
c +
( =
c
(

'
E A
C C
V
I I
=
34 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.18 Large-signal equivalent-circuit models of an npn BJT
operating in the active mode in the common-emitter configuration.
35 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.19(a)(b) Common-emitter characteristics. Note that the
horizontal scale is expanded around the origin to show the saturation
region in some detail.
4.2.4 An Alternative Form of The Common-Emitter Characteristics
( ),
( )
CQ
dc FE
BQ
C
ac fe
B
I
h
I
i
h
i

A
|
|
Common-emitter Current Gain
36 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.19(c) An expanded view of the common-emitter
characteristics in the saturation region.
sat
sat
sat
B B
C Csat
C F B
C
forced
B
forced F
CE
CE
i I
C
i I
I I
I
I
V
R
i
=
=
<

<
c

c
|
|
| |
The saturation voltage V
CEsat
and saturation resistance R
CEsat
37 S. C. Lin, EE National Chin-Yi University of Technology
Typically, 0.1 to 0.3
CEsat CEoff Csat CEsat
CEsat
V V I R
V V V
= +

38 S. C. Lin, EE National Chin-Yi University of Technology

Example 4.3
B
I
C
I
BC
V
BE
V
CE
V
10V
CC
V =
BB
V
B
R
C
R
For the circuit in Fig.4.21 has 10k and 1k ,
it is required to determine the value of the voltage that results the
transistor operating (a) in the active mode with
B C
BB
C
R R
V
V
= O = O
forced
5V, (b) at the edge
of saturation, (c) deep in saturation with 10
For simplicity, assume that 0.7V. The transistor 50
E
BE
V
|
|
=
=
= =
Solution:
( )
CC
C
10 5 V
5mA
1k
/ 5mA/ 50 0.1mA
0.1 1 1.7V 0 0.7
CE
C
B C
BB B B BE
V V
I
R
I I
V I R V

= = =
= = =
= +
= + =
|

39 S. C. Lin, EE National Chin-Yi University of Technology

( )
CC
C
10 0.3 V
( ) 9.7mA
1k
/ 9.7mA/ 50 0.194mA
0.194 10 0. 2 4V 7 .6
sat
CE
C
B C
BB B B BE
V V
b I
R
I I
V I R V

= = =
= = =
= + = + =
|

( )
CC
C
( ) 0.2V
10 0.2 V
9.8mA
1k
9.8mA
0.98mA
10
the requred can now be found as
0.98 10 0.7 10 5V .
sat
sat
CE CE
CE
C
C
B
forced
BB
BB B B BE
c V V
V V
I
R
I
I
V
V I R V
= ~

= = =
= = =
= + = + =
|

40 S. C. Lin, EE National Chin-Yi University of Technology

4.3 BJT circuits at DC
Consider the circuit shown in below Fig. We wish to
analyze this circuit t node voltages branch
currents
o determine all and
We will assume that

is speci

fied to b . e 100 |
Example 4.4
41 S. C. Lin, EE National Chin-Yi University of Technology
42 S. C. Lin, EE National Chin-Yi University of Technology
We wish to analyze this circuit below Fig. to determine
all node voltages and branch currents.We will assume that is
specified to be at least 50.
|
Example 4.5
43 S. C. Lin, EE National Chin-Yi University of Technology
0.96
1.5
0.64
C
forced
B
I
I
| = = =
44 S. C. Lin, EE National Chin-Yi University of Technology
We wish to analyze this circuit below Fig., to determine
all node voltages and branch currents.
Example 4.6
45 S. C. Lin, EE National Chin-Yi University of Technology
We desire to analyze this circuit below Fig., to determine
the voltages at all nodes and the currents though all branchs .Assume
100 | =
Example 4.7
46 S. C. Lin, EE National Chin-Yi University of Technology
We want to analyze the circuit in below Fig., to determine
the voltages at all nodes and the currents in all branchs .Assume 100 | =
Example 4.8
47 S. C. Lin, EE National Chin-Yi University of Technology
We want to analyze the circuit in below Fig., to determine
the voltages at all nodes and the currents in all branchs .The minimum
value of is specified to be 30. |
Example 4.9
48 S. C. Lin, EE National Chin-Yi University of Technology
We want to analyze the circuit in below Fig., to
determine the voltages at all nodes and the currents though all branchs .
Assume 100 | =
Example 4.10
49 S. C. Lin, EE National Chin-Yi University of Technology
50 S. C. Lin, EE National Chin-Yi University of Technology
We desire to evaluate the voltages at all nodes and the
currents though all branchs in the circuit of below Fig., Assume 100 | =
Example 4.12
51 S. C. Lin, EE National Chin-Yi University of Technology
4.4 Applying the BJT in Amplifier Design
+

BE
v
C
R
C
i
+

o CE
v v =
CC
V
X Y
Z
CE
v
CC
V
BE
v
Active
mode
Saturation Cut Off
Edge of
Saturation
0 0.5V
0.3V ~
4.4.1 Obtaining a Voltage Amplifier
52 S. C. Lin, EE National Chin-Yi University of Technology
4.4.2 The Voltage Transfer Characteristic (VTC)
X Y
Z
CE
v
CC
V
BE
v
Active
mode
Saturation Cut Off
Edge of
Saturation
0 0.5V
0.3V ~
/
/

BE T
BE T
v V
C S
CE CC C C
v V
CC C S
i I e
v V i R
V R I e
=
=
=
53 S. C. Lin, EE National Chin-Yi University of Technology
+

BE
v
C
R
C
i
+

o CE
v v =
CC
V
X
Y
Z
CE
V
CE
v
CC
V
BE
V
BE
v
Q
4.4.3 Biasing the BJT to Obtain Linear Amplification
54 S. C. Lin, EE National Chin-Yi University of Technology
X Y
Z
CE
v
CC
V
BE
v
Saturation
Cut Off
0
0.5V
0.3V ~
BE
V
Time
Time
Slop A
v
=
Q
Active
mode
/
/
( ) ( )
BE T
BE T
v V
C S
v V
CE CC C S
BE BE be
I I e
v V R I e
v t V v t
=
=
= +
Figure 4.33(a)
55 S. C. Lin, EE National Chin-Yi University of Technology
4.4.4 The Small-Signal Voltage Gain
/
(4.29)

, where
(4.30)
(4.32)
BE BE
BE T
C
C
CE
v
BE
v V
v V
CE C C
S v C
BE T T
R
C C
v R CC CE
T T
dV
A
dV
dV R I
I e A R
dV V V
V
I R
A V V V
V V
=

| |
= =
|
\ .
= = =
o
The observations on this expression for the voltage gain:
The gain is negative, which signifies that the amplifier is inverting
; that is, there is a 180 phase shift between the input and the out

put.
The gain is propotional to the collector bias current and to the load
resistance .
C
C
I
R

56 S. C. Lin, EE National Chin-Yi University of Technology

Example 4.13
15
Consider an amplifier circuit using a BJT having
10 A, a collector resistance 6.8k , and a power supply
10V.(a) Find ,and , such that the BJT operate at 3.2V
s C
CC BE C CE
I R
V V I V

= = O
= =
(b)Find the voltage gain at this bias point. If 5sin (mV)
find .(c)Find the positive increment in that drive the transistor to
the edge of saturation( 0.3V).(d)Find the negative in
sat
v i be
o BE
CE
A v v t
v v
v
= =
=
e
crement in
that drive the transistor to the within 1% of cut-off.
BE
v
Solution:
( )
( )
( )
CC
C
/
CC
10 3.2 V
( )
6.8k
ln /
10 3.2 V
( )
0.025V

272V/V
1.36sin (V 272 0
1mA
690.
.005si


8 mV
) n
BE T
CE
C
v V
C S BE T C S
CE
v
T
o ce
V V
a I
R
I I e v V I I
V V
b
V
v V t t
A

= = =
= = =

= =
= =
=
= e e

57 S. C. Lin, EE National Chin-Yi University of Technology

( )
CC
C
2
1
( ) For 0.3V
10 0.3 V
1.617mA
6.8k
To increase from 1mA to 1.617mA, must be increase by
1.617
ln 0.025ln
1
12mV
sat
CE
CE
C
C BE
C
BE T
C
c v
V V
i
R
i v
I
v V
I
=

= = =
| |
| |
A = = =
|
|
\ .
\ .

( )
CC
C
( ) For 0.99 9.9V
10 9.9 V
0.0147mA
6.8k
To decrease from 1mA to 0.0147mA, must be change by
0.0147
0.025ln 105.5mV
1

CE CC
CE
C
C BE
BE
d v V
V v
i
R
i v
v
= =

= = =
| |
A = =
\

|
.

58 S. C. Lin, EE National Chin-Yi University of Technology
4.4.5 Determining The VTC by Graphical Analysis
Figure Graphical construction for the determination of the dc base
current in the circuit of Fig.4.33(a).
Figure 4.33(a)
59 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.34 Graphical construction for determining the dc
collector current I
C
and the collector-to-emitter voltage V
CE
in the
circuit of Fig.4.33(a).
CE CC C C
CC CE
C
C C
v V i R
V V
i
R R
=
=
60 S. C. Lin, EE National Chin-Yi University of Technology
Figure 4.35 Effect of bias-point location on allowable signal swing: Load-line A results
in bias point Q
A
with a corresponding V
CE
which is too close to V
CC
and thus limits the
positive swing of v
CE
. At the other extreme, load-line B results in an operating point too
close to the saturation region, thus limiting the negative swing of v
CE
.
4.4.6 Locating the Bias Point Q
61 S. C. Lin, EE National Chin-Yi University of Technology