ANNOUNCEMENTS
Contact Dave Nguyen (nguyendt@uclink) if you lost a calculator in the lab
The EECS40 Course Reader (containing supplemental reading from
Schwarz & Oldham) is now available at Copy Central, 2483 Hearst Ave.
Try the educational applets available online! (Visit the class website.)
OUTLINE
The MOSFET as a controlled resistor
Pinch-off and current saturation
Channel-length modulation
Velocity saturation in a short-channel MOSFET
Reference Reading
Rabaey et al.: Chapter 3.3.2
Schwarz & Oldham: Chapter 13.4
Howe & Sodini: Chapter 4.3
EECS40, Fall 2003
Prof. King
MOSFET Terminals
The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
Prof. King
NMOS
n+ poly-Si
n+
n+
p-type Si
PMOS
p+ poly-Si
p+
p+
n-type Si
Prof. King
NMOSFET Example:
ID
VGS = 2 V
VGS = 1 V > VT
VDS
IDS = 0 if VGS < VT
EECS40, Fall 2003
Prof. King
t
homogeneously doped sample
Rs =
1
1
1
=
=
t qn nt nQn
Prof. King
V DS
R DS
R DS = R s ( L / W ) =
L /W
L /W
=
n Qi C (V V V DS )
n ox
GS
T
2
V
W
I D = nCox (VGS VT DS )VDS
L
2
average value
of V(x)
Prof. King
depletion region
VGS > VT :
VDS 0
I D = WQinv v
= WQ inv n E
V
= WQ inv n DS
L
VDS > 0
(small)
Prof. King
VDS = VGSVT
Prof. King
VGS
VDS > VGS - VT
I DSAT = nCox
S
n+
VGS - VT
W
(VGS VT )2
2L
n+
pinch-off region
EECS40, Fall 2003
Prof. King
V
W
VGS VT DS VDS
L
2
where k n = n C ox
I D = k n
2) Saturation Region:
VDS > VGS VT
k n W
(VGS VT )2
2 L
where k n = n C ox
I DSAT =
Prof. King
Channel-Length Modulation
If L is small, the effect of L to reduce the inversion-layer
resistor length is significant
ID increases noticeably with L (i.e. with VDS)
ID
ID = ID(1 + VDS)
is the slope
ID is the intercept
VDS
Prof. King
v is not proportional to E,
due to velocity saturation
Prof. King
L
where VDSAT =
vsat
Prof. King
Prof. King