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UNIT-V SMALL SIGNAL LOW FREQUENCY BJT MODEL

1. List out the advantages of h-parameters.
1. h-parameters are real numbers at audio frequencies.
2. These are easy to measure.
3. h-parameter can also be obtained from the transistor static characteristic
curves.
4. h-parameters are convenient to use in circuit analysis and design.
5. A set of h-parameters is specified for many transistors by the manufacturers
2. Draw the h-parameter circuit and its equivalent circuit in CE
configuration.
h-parameter model

Generalized h-parameter model of an NPN BJT.

Replace x with e, b or c for CE, CB and CC topologies respectively.
As shown in above diagram, the term "x" in the model represents a different BJT lead depending
on the topology used. For common-emitter mode the various symbols take on the specific values
as:
x = 'e' because it is a common-emitter topology
Terminal 1 = Base
Terminal 2 = Collector
Terminal 3 = Emitter
ii = Base current (ib)
io = Collector current (ic)
Vin = Base-to-emitter voltage (VBE)
Vo = Collector-to-emitter voltage (VCE)

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and the h-parameters are given by:

hie The input impedance of the transistor (corresponding to the emitter resistance re).
hre Represents the dependence of the transistor's IBVBE curve on the value of VCE. It is
usually very small and is often neglected (assumed to be zero).
hfe The current-gain of the transistor. This parameter is often specified as hFE or the DC
current-gain (DC) in datasheets.
hoe The output impedance of transistor. This term is usually specified as an admittance
and has to be inverted to convert it to an impedance.
For the CE topology, an approximate h-parameter model is commonly used which further
simplifies the circuit analysis. For this the hoe and hre parameters are neglected (that is, they are
set to infinity and zero, respectively). It should also be noted that the h-parameter model as
shown is suited to low-frequency, small-signal analysis. For high-frequency analysis the interelectrode capacitances that are important at high frequencies must be added.
3. Summarize salient features of characteristics of BJT operating in CE, CB, CC configurations.

COMPARISON OF CB, CE, CC CONFIGURATIONS:

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S. No. Property

CB

CE

Input Resistance

Low ( 100 )

Moderate( 750 ) High ( 750k )

Output resistance

High ( 450k)

Moderate ( 45k)

Low ( 75 )

Current gain

High

High

Voltage gain

Phase shift between 0 or 360

input and output
voltages

Applications

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150

500
180

High frequency AF circuits

circuits

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CC

<1
0 or 360

Impedance
matching.

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