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Michael Lance Mioza

BS EE III

SO12

ACTIVITY 7
COMMON-EMITTER CONFIGURATION (NPN and PNP)
I.

OBJECTIVES

The objectives of this activity are to be able to design a common-collector configuration


amplifier and switch and to study the characteristics of the BJT with a dc source in this
configuration along its regions of operation.
II.

BASIC CONCEPTS

The common-emitter configuration is the most frequently encountered transistor


configuration for both NPN and PNP transistors. It is called as such since the emitter is common
or reference (grounded) to both input and output terminals. There are two characteristics are
necessary to fully describe the behaviour of the common emitter-configuration, that is, the baseemitter circuit and collector-emitter circuit.
For common-emitter configuration, the output characteristics are a plot of the output
current (IC) versus the output voltage (VCE) for a range of values of input current (IB), which can
be seen on the previous activity. The input characteristics are a plot of the input current (IB)
versus the input voltage (VBE) for a range of values of output voltage (VCE).
When employed as an amplifier, the common-emitter configuration must operate within the
active region, where the base-emitter junction is in forward bias and the base-collector junction
is in reverse bias. As a switch, a transistor will have two points of interest: the cut-off region and
the saturation region.
The cut-off region is where there is close to zero current going across the transistor, as if it
was an open circuit. For a common-emitter configuration to operate in the cut-off region, the
base-emitter junction must be in reverse bias and the base-collector junction in forward bias. It
is somewhat opposite to that of the active region.
Meanwhile, the saturation region is where there is close to zero voltage, as if the transistor
was a short circuit. For a common-emitter to operate in the saturation region, both junctions
must be in forward bias. From this, we can see the transistor acting as if it was a switch, open
when in the cut-off region and close when in the saturation region.
In the dc mode the levels of IC and IB are related by a quantity called beta defined by the
equation: = IC/IB. It is also known as the current gain of the transistor which is dependent on
the currents flowing across the transistor and temperature. For practical devices, the level of
typically ranges from about 50 to over 400, with most in the midrange.

Figure 7-1. A simple common-emitter configuration circuit

Figure 7-2. A practical common emitter amplifier circuit

Figure 7-3. Output characteristic curve for common-emitter configuration

Figure 7-4. Input characteristic curve for common-emitter configuration


Before starting on the design of the transistor circuit, it is necessary to define the
requirements. Without knowing what is required of the circuit, it is not possible to design the
circuit. There are no aims for it. There can be a number of parameters required in the
requirements for the transistor circuit design:
Voltage gain: The voltage gain is often a key requirement. It is the output signal voltage
divided by the input signal voltage.
Current gain:
This is the gain of the transistor circuit in terms of current. Input
impedance: This is the impedance that the previous stage will see when it is providing a
signal to this transistor circuit in question.

Output impedance: The output impedance is also important. If the transistor circuit is
driving a low impedance circuit, then its output must have low impedance, otherwise a
large voltage drop will occur in the transistor output stage.
Frequency response: Frequency response is another important factor that will affect the
transistor circuit design. The choice of the transistor and capacitor values in the circuit
design will be greatly affected by the required frequency response.

Table 7-1. Formulas for getting the voltage current and power gain
III. MATERIALS AND EQUIPMENTS
BJT: 2N3904 NPN transistor, 2N3906 NPN transistor. (See Table 7-2 and 7-3 for Data Sheet)
Resistors
Connectors
Breadboard
DC Power Supply
Multitester
IV. PROCEDURE
Refer to the BJTs specification on the manufacturers data sheet for values needed to
operate at different regions.

Active Region (Amplifier) NPN and PNP


1. Construct a circuit as shown in Figure 7-5.

Figure 7-5
Figure 7-6
Figure 7-5 & 7-6. Linear mode NPN and PNP

2.

3.

4.
5.

6.

A voltage divider circuit was used so the circuit would be less dependent on the value of
the beta and if used for designing purposes, it would not affect the other values too much.
The circuit also contains an emitter resistor to improve stability level over that of the fixed
bias-configuration.
For an active region operation, the output must be found along the upper right area of
the characteristic graph. Thus, values of VCE and IC must be somewhere along middle of
the load line meaning greater than the cut-off current and the saturation voltage. For
this, we use half of the value of the input for VCE and a tenth of the input for VE.
The value of during an active region operation is greater compared to other operations
and must be assumed to be so, but since our circuit is in the voltage divider network, the
value of would not affect our values too much. Refer to the data sheets for values
needed to operate at the active region.
Calculate the values of Rc and Re using the assumed values of VCE, IC and that makes
the network operate on the active region.
Calculate the values of R1 and R2 assuming that the current across R1 is 11 times IB and
the current across R2 is equal to 10 times IB. Then select the correct ratio of the resistors
to provide the voltage required at the base.
Replace the NPN transistor with the PNP transistor and repeat steps 1 to 3.

Saturation Region NPN and PNP


1. Construct a circuit as shown in Figure 7-7.

Figure 7-7
Figure 7-8
Figure 7-7 & 7-8. Saturation mode NPN and PNP
1. For the saturation region operation, the output must be found near the voltage line of
the characteristic graph since during this operation voltage across the output is close to
zero. As such, the value of IC must be greater than the assigned cut-off current and VCE
must not be greater than the assigned saturation voltage. The value of during a
saturation operation is significantly smaller compared to the active region and must be
assumed to be so. Refer to the data sheets for values of ICBO and VCEsat.
2. Calculate the values of Rc and Rb using the assumed values of VCE, IC and that makes
the network operate on the active region.
3. Replace the NPN transistor with the PNP transistor and repeat steps 1 to 3.

Cut-off Region NPN and PNP


1. Construct a circuit as shown in Figure 7-9.

Figure 7-9
Figure 7-10
Figure 7-9 & 7-10. Cut-off mode for NPN and PNP
2. For the cut-off region operation, the output must be found the current line since during
this operation, the current is across the output is close to zero. As such the value of V CE
must be greater than the assigned saturation voltage and IC must be less than the
assigned cut-off current. During cut-off region operation, we will have to make the
voltage across equal to zero or connect it to the ground. In this way, current in the base
will not flow, and also the current in the collector.
3. Rc and Rb can be in any value but must not be too large as to change the proper output.
4. Replace the NPN transistor with the PNP transistor and repeat steps 1 to 3
V.

TABLES/GRAPHS

The student used a simulation of the given procedure when conducting the activity. He used
NI Multisim 13.0, a circuit design software.

Table 7-2. 2N3904 NPN Transistor Datasheet

Table 7-3. 2N3906 PNP Transistor Datasheet

Vcc, V

Vce, V

R1,

R2,

Re,

1.8k 620

51

250

Rc, Rb,

Ib,
mA

Ic, mA

Region of
Operation

0.1

10

100

Active region

2.5

-5

-5

100

1k

Cut-off Region

0.1

490

4.3k

10

10

Saturation Region

Table 7-4. Assumed and calculated values for the NPN transistor for common-emitter
configuration
Vcc,
V

Vce,
V

R1,

R2,

Re,

Rc,

Rb,

Ib,
mA

Ic,
mA

Region of
Operation

-5

-2.5

1.8k

620

51

250

-0.1

-10

100

Active region

100

1k

Cut-off Region

-5

-0.1

490

4.3k

-1

-10

10

Saturation Region

Table 7-5. Assumed and calculated values for the PNP transistor for common-emitter
configuration
Vcc,
V

Vce,
V

R1,

R2,

Re,

Rc,

Rb,

Ib, mA

Ic, mA

Region of
Operation

2.572

1.8k

620

51

250

0.0624

9.65

154.6

Active region

-5

-5

100

1k

Cut-off Region

0.1

490

4.3k

10.1

Saturation Region

990.097 10.025

Table 7-6. Simulated values for the NPN transistor for common-emitter configuration

Vcc,
V

R1,

Vce, V

R2,

Re,

Rc,

Rb,

Ib, mA

Ic, mA

Region of
Operation

-5

-2.593

1.8k

620

51

250

-0.0537

-9.578

178.1

Active
region

100

1k

Cut-off
Region

-5

0.0617

490

4.3k

-979

-10.078

10.29

Saturation
Region

Table 7-7. Simulated values for the NPN transistor for common-emitter configuration
VI. CONCLUSION
After the activity was conducted, a common-emitter configuration that works as an amplifier
and switch was designed. The circuit configuration was named as such since the emitter is
common to both the base and the collector.
For the amplifier, some parameters were assumed and approximated so that it will operate
at the active region. The same concept was done for the cut-off region and saturation region.
From the data taken during the activity, the only difference between the NPN and PNP
transistor is the signs of the values of their components. There is also a small difference between
the simulated and calculated values. This is because most of the values were initially assumed
and approximated.

REFERENCES
1. Boylestad, R. &Nashelsky L. (1998). Electronic Devices and Circuit Theory. Prentince Hall,
Upper Saddle River, New Jersey.
2. Fairchild Semiconductor Corporation (October, 2011). 2N3904 NPN General Purpose
Amplifier. https://www.fairchildsemi.com/datasheets/2N/2N3904.pdf
3. Fairchild Semiconductor Corporation (October, 2011). 2N3906 PNP General Purpose
Amplifier. https://www.fairchildsemi.com/datasheets/2N/2N3906.pdf
4. Poole, Ian. Common Emitter Amplifier Design. http://www.radioelectronics.com/info/circuits/transistor/common-emitter-amplifier-design.php
5. Poole, Ian. Common Emitter Transistor Amplifier Circuit. http://www.radioelectronics.com/info/circuits/transistor/common-emitter-amplifier-configuration.php
6. Poole, Ian. Transistor Circuit Design Tutorial. http://www.radioelectronics.com/info/circuits/transistor/circuit-design-tutorial.php
7. Storr, Wayne. Common Emitter Amplifier. http://www.electronicstutorials.ws/amplifier/amp_2.html
8. AllAboutCircuits.com. Amplifier Gain.
http://www.allaboutcircuits.com/vol_3/chpt_1/4.html

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