Power SCR (Thyristor)

Group Members:
A11MJ0069 AHMAD NUR FIRDAUS BIN
HASHIM
A11MJ0027 MOHD HARITH BIN MOHD AMIN
B12MJ0019 AHMAD ZHARIF BIN WAHID
B12MJ0021 WAN AFIQ HAFIZUDIN BIN WAN
KAMARUDIN MAPE
Abstract
Introduction
The Thyristor block is a semiconductor device that
can be turned on via a gate signal. The thyristor is
modeled as a resistor (Ron), inductor (Lon), and DC
voltage source (Vf), connected in series with a
switch. The switch is controlled by a logical signal
depending on the voltage Vak, the current Iak and
the gate signal (G).

The Thyristor block also contains a series Rs-Cs

snubber circuit, which is usually connected in
parallel with the thyristor.You can specify a
snubber which is purely resistive (Cs = Inf) or
purely capacitive (Rs=0). If you specify either
Rs=Inf or Cs=0, the snubber is eliminated and it
disappears on the thyristor icon.
The static VI characteristic of this model is shown
in the figure that follows.

The thyristor turns on when the anode-cathode

voltage is greater than Vf and a positive pulse
signal is present at the gate input (G>0). The pulse
height must be greater than zero and last long
enough to allow the thyristor anode current to
become larger than the latching current Il.

The thyristor turns off when the current flowing in

the device becomes zero (Iak=0) and a negative
voltage appears across the anode and cathode for
at least a period of time equal to the turn-off time
Tq. If the voltage across the device becomes
positive within a period of time less than Tq, the
device will turn on automatically even if the gate
signal is low (G = 0) and the anode current is less
than the latching current. Furthermore, if during
turn on, the device current amplitude stays below
the latching current level specified in the dialog
box, the device turns off after the gate signal level
becomes low (G = 0).
The turn-off time Tq represents the carrier
recovery time: it is the time interval between the
instant the anode current has decreased to zero
and the instant when the thyristor is capable of
withstanding positive voltage Vak without turning
on again.

Methodology
%Thyristor parameters
% v is the anode-cathode voltage.
% Vf is the forward voltage.
% G is the gate voltage.
% Vgt is the gate trigger voltage.
% i is the anode-cathode current.
% Ih is the holding current.
% Ron is the on-state resistance.
% Goff is the off-state conductance.
v= -50:0.5:100;
Vf = 0.8;
G = 2.5;
Vgt = 6;
Ih = 1;
Ron = 0.001;
Goff = 1e-5;
i= -50:0.5:100;
%Simscape equation
for k=1:length(v)
if (v(k) > Vf)&&((G>Vgt)||(i(k)>Ih))
i(k)= ((v(k) - Vf.*(1-Ron.*Goff)))./Ron;
else
i(k)= v(k).*Goff;
end
end
%plotting V-I characteristics curve
plot(v,i)

Power SCR (Thyristor)

xlabel('Voltage -->')
ylabel('Current -->')
grid on;

Result
From the obtained Simscape equation, we plot the
V-I characteristics curve of the silicon-controlled
rectifier (thyristor). Based on the equation, there
are regulation need to be met in order the
thyristor be switched to on or off state.

On-Off state

Conclusion
References
1.
Off state

2.
3.
4.
5.
6.
7.
8.

On state

http://www.mathworks.com/help/physm
od/sps/ref/thyristor.html
http://yeshsurya.blogspot.com/2012/04/
matlab-program-to-plot-vi.html
http://en.wikipedia.org/wiki/Thyristor
http://pe.gastli.info/pe_html/ch03s1/ch0
3s1p1.htm
http://www.tutorialspoint.com/matlab/m
atlab_plotting.htm
http://www.edaboard.com/thread80782.
html
http://dali.feld.cvut.cz/ucebna/matlab/to
olbox/powersys/thyristor.html
http://www.onsemi.com/pub_link/Collat
eral/HBD855-D.PDF