INTRODUCTION
1.1
Background of study
Metal oxide nanoparticles are getting more attention by many researchers in recent
years due to their special electronic and chemical properties. Among the metal oxide
semiconductors, TiO2 and ZnO have been studied extensively due to their chemical
stability and efficient photocatalytic properties (Stoyanova et al. 2013). Both of these
metal oxides are photoactive, photocatalytically active, and antibacterial. Hence they
are typically used in self-cleaning surfaces, water and air purification, and
bactericidal coatings against microbes.
Various technique are used to synthesis thin film of TiO2 and ZnO, including
vacuum evaporation, sputtering, molecular-beam epitaxy, laser-assisted vacuum
evaporation, chemical-bath deposition, electrodeposition, liquid phase deposition, dip
coating and sol gel process (Wang et al. 2013). However, out of these techniques, the
sol gel is considered as the best. This is because, the sol gel process is a liquid
deposit process using soft chemistry that giving homogenous deposit. This process
provides better prospect to deposit film with large surface area (El-Nahass et al.
2012). Beside that, this method is one of the simplest and economical in term of
equipment.
The sol gel process involves spin coating or dip coating of the oxide sol on
substrate. But in this study, we were focuses more on spin coating. Spin coating is
commonly used in the synthesis of TiO2 thin film due to rapid growth rates, capacity
of handling large sample sizes, mass production capability, and high yield rates.
1.2
Problem Statement
In this modern day, there is a problem related to air contamination in our house,
workplace and building. This means, there is pollutant inside the building due to
present of viruses, organic materials, odour and bacteria. Furthermore, the
organisation that uses a lot of space for their building such as university, school,
hospital, and large company must used a lot of expenses for their cleaning equipment
and material.
Therefore, from the previous study TiO2 and ZnO have a lot application such
as photocatalytic activity and self cleaning that is useful to overcome those problems.
3
1.3
Significance of Study
The findings obtained at end of this study are significant to other researchers and
industrial practitioners. This is because we use cheaper substance such as TiO2 and
ZnO. Furthermore, we also used sol gel process to synthesis TiO2 and ZnO that is
simple and economical. Hence, would give the chance to produce large surface area
of the coating. Also provide great application in destruction and elimination of
pollutant in air.
1.4
CHAPTER 2
LITERATURE REVIEW
2.1
Overview
2.1.1
TiO2
Titanium dioxide (TiO2) have been attracted many researchers due to its suitability in
many application. Such as, semiconductors, separation, catalysis and chemical
protection (Wang et al. 2013). Titanium dioxide has a wide band gap semiconductor
that exhibits high transparency to visible and near infra red (NIR) light (Hinczewski
et al. 2005). It has three crystalline phases: anatase (tetragonal), rutile (tetragonal),
and brookite. Brookite is a naturally occurring phase, and is extremely difficult to
synthesize. Anatase and rutile also occur naturally, but can be synthesized in the
laboratory easily.
TiO2 has a wide band semiconductor. The band gaps of TiO2 are 3.2 eV for
the anatase, , 3.02 eV for rutile and 2.96 eV for brookite phases. (Wunderlich W. et
al.2004). The valence band of TiO2 consists of the 2p orbitals for oxygen hybridized
with the titanium 3d orbitals, while the conduction band is only the 3d orbitals of
titanium. When TiO2 exposed to near-UV light, there is excitation of electrons in the
valence band to the conduction band. Hence, leaves the holes (h+), as shown in
Figure 2.1. Then excited electrons (e) in the conduction band will have purely 3d
state. The transition probability of e to the valence band decreases due to dissimilar
party. This leads to a reduction in the probability of e/h+ recombination.
Figure 2.2 Surface band bending of the (a) anatase and (b) rutile phases of TiO2
(Li G. et al. 2007)
2.1.2. ZnO
Zinc oxide (ZnO) is a chemical compound found naturally in the mineral called
zincite. It has concerning by many researchers recently due to its low cost and able to
obtained by simple techniques (Savi et al. 2012). The techniques is solgel synthesis,
hydrothermal/solvothermal methods, microemulsion method, precipitation,and
physical vapor deposition. In the current study, ZnO nanoparticles was prepared by a
simple and cost effective solgel method (Streams 2011). Sol-gel method gives highpurity, homogenous, and high-quality nanopowders. The changes of solvent will
cause the morphology of the nanoparticles changing.
2.2
Chemical structure
2.2.1
TiO2
TiO2 is from the family of transition metal oxides. There are three generally known
polymorphs of TiO2 found in nature: anatase (tetragonal), brookite (orthorhombic),
and rutile (tetragonal). Other than these polymorphs, there are two additional highpressure forms have been synthesized from the rutile phase. These are TiO2 (II) with
a PbO2 structure and TiO2 with a hollandite structure.
Rutile TiO2 has a tetragonal structure and contains 6 atoms per unit cell
(Figure 2.3). The TiO6 octahedron is slightly distorted. The rutile phase is stable at
most temperatures and pressures up to 60 kbar, where TiO2 (II) becomes the
thermodynamically favorable phase. It is found that anatase and brookite structures
transformed to the rutile phase after reaching a certain particle size. Where the rutile
phase becoming more stable than anatase when particle sizes greater than 14 nm
(Zhang et al.2000). Once the rutile phase formed, it grew more rapidly than the
anatase. The photocatalytic activity of the rutile phase is usually very poor. However,
it can be concluded that the rutile phase can be active or inactive, which depend on
its preparation conditions.
Anatase TiO2 also has a tetragonal structure but the distortion of the TiO6
octahedron is slightly larger for the anatase phase, as depicted in Figure 2.4. The
anatase phase has been reported to develop at temperature below 800 oC which at
higher temperatures transform to the more stable rutile phase (Mechiakh et al. 2011).
The anatase structure is favourable than the other polymorphs for solar cell
applications. This is because of its low dielectric constant, high electron mobility,
8
and lower density. The slightly higher Fermi level that has low capacity to adsorb
oxygen and higher degree of hydroxylation in the anatase phase causes an increased
in photoreactivity. Brookite of TiO2 belongs to the orthorhombic crystal system. The
unit cell TiO2 has 8 formula units and is formed by edge-sharing TiO6 octahedra
(Figure 2.5). It is more complicated, has a larger cell volume and is also the least
dense of the 3 forms and is not often used for experimental investigations (Thompson
et al, 2006).
Table 2.1 Crystal structure data for TiO2 (Gupta and Tripathi 2011)
Properties
Anatase
Rutile
Brookite
Crystal structure
Tetragonal
Tetragonal
Orthorhombic
Lattice constant ()
a = 4.5936
a = 3.784
a = 9.184
c =2.9587
c = 9.515
b = 5.447
c = 5.154
Molecule
Density (g cm-3)
4.13
3.79
3.99
1.949
1.937
1.872.04
()
1.980
1.965
81.2
77.7
90.0
92.6
77.0105
2.2.2
ZnO
ZnO crystallizes in the structure of wurtzite. Where each anion is bounded by four
cations at the corners of a tetrahedron, and vice versa ZnO is available as large bulk
single crystals. This tetrahedral coordination is usual of sp3 covalent bonding nature.
The present of substantial ionic character in the material tends to increase the band
gap further than expected from the covalent bonding. ZnO is a IIVI compound
semiconductor whose ionicity resides at the borderline between the covalent and
ionic semiconductors. The crystal structures of ZnO are wurtzite (B4), zinc blende
10
(B3), and rocksalt (or Rochelle salt) (B1) as schematically shown in Figure
2.6.(Properties 2009)
2.3
2.3.1
Physical properties
Solutes will affect the solubility of titanium dioxide. It is soluble in hot concentrated
sulphuric acid, hydrochloric acid, nitric acid, but insoluble in dilute alkali and dilute
acid. Titanium dioxide has the performance of the semiconductor. Increasing
temperature will increase the conductivity rapidly. It is also very sensitive to
hypoxia. The melting and boiling points of the board of rutile and anatase titanium
dioxide in fact does not exist. This is because, when anatase and plate titanium
dioxide are at high temperatures, it can be transformed into rutile. Titanium dioxide
has a good thermal stability, the general amount of 0.01% to 0.12%. Furthermore,
titanium dioxide has not too strong hydroscopicity. Where, the hydrophilic is
connected to surface area. The large the surface area, provide greater moisture
11
Zinc oxide crystallizes in two major forms, hexagonal wurtzite and cubic
zincblende. The wurtzite structure is most stable at ambient conditions and thus most
common. The growing of ZnO on substrates with cubic lattice structure able to
stabilized zincblende form. The zinc and oxide centers are tetrahedral in both cases,
the general characteristic geometry for Zn(II). At relatively high pressures about 10
GPa, ZnO converts to the rocksalt motif. Polymorphs of hexagonal and zincblende
do not have inversion symmetry (reflection of a crystal relative to any given point
does not transform it into itself). This and other lattice symmetry properties result in
piezoelectricity of the hexagonal and zincblende ZnO, and pyroelectricity of
hexagonal ZnO.
2.3.2
Chemical properties
Titanium dioxide is non-toxic and has stable chemical properties. Under normal
temperature, it almost has no reaction with other material. There is no reaction with
oxygen, hydrogen sulphide, sulphur dioxide, carbon dioxide and ammonia. It is also
insoluble in water, fatty acids, other organic acid and weak inorganic acid except for
alkali and hot nitric acid. But, in several specific conditions, titanium dioxide is able
to react with some substance.
2.4
Mill and Le Hunter (1997) reported that decreasing particle size resulted in
absorption edge blue shifts, the redox potentials of the photogenerated electrons and
holes in quantized semiconductor particles increased. Means, quantized particles
show
higher
photoactivity
than
macrocrystalline
semiconductor
particles.
Futhermore, TiO2 has been prepared in the form of powders, crystals, thin films,
nanotubes and nanorods. Liquid phase processing is one of the most suitable and
frequently used methods in chemical synthesis. This method has the advantages of
controlling the stoichiometry, homogeneous products and allowing the formation of
complex shapes and preparation of composite materials.
14
2.5
Study of TiO2 and ZnO thin films with the same parameters.
2.5.1
From the AFM images and data, as shown in Table 2.2, it show that for the
crystalline films, increasing annealing temperature causes slightly increased of the
grain size and significantly increased the surface roughness. But the thickness of the
film remained at ~255 nm, regardless of the annealing temperature. All of the films
were highly transparent in the visible region (~80%), the optical indirect band gap
decreased slightly with increasing annealing temperature. For the total range films,
the increased annealing temperature to 400 C show the increased of photocatalytic
performance. But, after increase to higher temperature the performance was observed
to decrease. Thus, it concluded that for an annealing time of 2 hour, 400C is the
optimal temperature for annealing TiO2 thin film. (Lin et al. 2013)
15
Units
300
400
500
Mineralogy
Amorphous
Anatase
Anatase
Nm
~10
~23
~29
Nm
0.32
0.59
0.96
Film thickness
Nm
~260
~250
~246
~80
~80
~80
eV
3.49
3.49
3.43
16
2.5.2
The results show the ultraviolet emission of ZnO thin films is greatly
improved after they are covered by TiO2 nanoparticles, while the green emission is
hidden. At pretty high annealing temperature (more than 500 C), the intensity of
ultraviolet emission will decrease and a violet emission peak along with a blue
emission peak appears. This is probably related with the atomic interdiffusion
between TiO2 nanoparticles and ZnO thin
17
Figure 2.8 Photoluminescence spectra of the bare ZnO thin film and TiO2ZnO thin
films.
2.6
Photocatalytic activity
18
The chemical reaction is occurred between the super-charged ion and the
pollutant after bound together and efficiently "oxidizing" (or burning) the pollutant.
The pollutant will breaks down into non dangerous carbon dioxide and water
molecules. Hence, makes the air more purified.
19
CHAPTER 3
METHODOLOGY
3.1
Chemical:
TiO2 solution
1.
2.
3.
4.
Ethyl alcohol.
ZnO solution
1.
2.
Hexamethylenetetramine (HMTA)
3.2
Apparatus:
1.
Glass substrate
2.
3.
4.
5.
Magnetic stirrer
6.
Sample container
7.
Sample box
8.
Tweezer
9.
Reaction bottle
20
3.3
The glass substrate of microscope is cut into 3 pieces using the diamond cutter, with
the size of approximately 2.0 cm 2.0 cm for each piece. Methanol, acetone and DI
water is used to clean the glass substrates (so that no extraneous particles on their
surfaces) by using Ultrasonic bath for 5 minutes at 40 C.
i. Methanol : 2 times
ii. Acetone: 2 times
iii. DI water: 2 times
The wet glass substrates is then dried out using hair dryer and put into a sample
container.
3.4
3.5
TiO2 thin films were deposited using sol-gel spin coating method. The deposition of
TiO2 on the glass substrate required 15 drops of TiO2 sol gel for each layer. Where in
this study each samples prepared is coated with 7 layer of TiO2 sol gel. This method
involves three steps, which are:
a.
b.
c.
For each layer of TiO2, the film was heated in an oven at 150 C for 10 minutes. The
sample was annealed in annealing chamber at 350 C, 400 C, 450 C, 500 C and
550 C for 2 hours.
3.6
3.7
The glass substrate that has been coated with TiO2 was placed in the reaction bottle.
Then the glass substrate was immersed in ZnO solution and the reaction bottle is
capped. The reaction bottle is placed in water bath at 90 C for 4 hours. After 4
hours, the ZnO solution is removed and the glass substrate was rinsed with DI water
before heated in the oven at 150 C for 20 minutes. The sample was annealed in the
annealing chamber at 500 C for 1 hour.
3.8
3.8.1
UV-Vis
Ultraviolet (UV) and visible radiation consist of only a small part of the
electromagnetic spectrum.
Electromagnetic
22
radiation
can
be
considered
combination of alternating electric and magnetic fields that travel through space with
a wave motion. Because radiation acts as a wave, it can be classified in terms of
either wavelength or frequency. When light passes through or is reflected from a
sample, the amount of light absorbed is the difference between the incident radiation
and the transmitted radiation. The amount of light absorbed is expressed as either
transmittance or absorbance. Ultraviolet-visible spectroscopy is used to determine
the optical properties of the thin film TiO2/ZnO structures.(Upstone 2000)
3.8.2
3.8.3
24
CHAPTER 4
4.1
4.1.1
Figure 4.1 shows the optical transmittance for different annealing temperature of
TiO2/ZnO thin film which is measured in the range of wavelength 200-850 nm. The
transmittance spectra show that all film had average transmittance between 1% to
80% within the visible region (400-850 nm). The transmission decreases sharply near
the ultraviolet region about 380 nm due to the band gap absorption.
It is also found that the as-grown of TiO2/ZnO thin film has the highest
transmittance compare to the others. As-grown is the thin film that has the layer
coated with TiO2 which did not undergo any annealing process before being coated
with ZnO. The transmittance for the as-grown is about 80%. While, for all of the film
analyzed it is observed that the increase of annealing temperature would decrease the
optical transmission. To be specific, the thin film that was annealed at 350C, 400C
and 450C has similar pattern of transmittance. All of these films start to transmit at
the wavelength 300 nm.
25
80
as grown
% Transmittance
60
350 C
o
550 C
o
450 C
o
500 C
40
400 C
20
200
300
400
500
600
700
800
Wavelength / nm
Figure 4.2 shows that the absorption of TiO2/ZnO thin film increase with
increase of annealing temperature from 350C to 550C. All the thin film annealed
starts to absorb light at the wavelength of 300 nm. The absorption for all thin film in
the ultraviolet range is relatively high which is at the intensity of 6 arbitrary unit, but
then decrease gradually in the visible region. Where, the absorption is actually
inversely proportional to the transmittance. This might be related to the increase in
grain size which contributes to the light scattering effect due to the high surface
roughness.
as-grown
350
400
450
500
550
6
o
500 C
o
Absorbance (a.u.)
550 C
4
400 C
o
450 C
o
350 C
as-grown
400
600
800
Wavelength / nm
4.1.2
Figure 4.3 shows there are two types of peak emission, which are ultraviolet peak
emission and visible peak emission. The peak of ultraviolet can be seen near the
ultraviolet region about 380 nm.
annealing temperature will increase the ultraviolet emission until it reaches 450C.
However, the ultraviolet emission is reduced when the annealing temperature
increase from 5000C to 5500C (Xu et al. 2010).
Figure 4.4 shows the enlargement of Figure 4.3 which focuses on the peak at
the UV region within the wavelength of 350 nm 450 nm. It is observed there is a
red-shift occurred as the temperature increased from 350C to 450C. The increase of
annealing temperature from 350C, 400C and 450C shows the peak emission will
shifted at 382 nm, 387 nm and 392 nm respectively. However, at the annealing
temperature 500C and 550C there is no shifted occur as it has peak relatively
similar as 350C. This means the increased of annealing temperature might cause
red-shift. Red-shift is occurs usually due to decrease of the band gap cause by the
increase in particle size. (Epitaxy 2001).
Figure 4.5 and 4.6 is plotted based on information obtained from Figure 4.3
by using temperature versus intensity. It differentiates between the peak emission of
UV region and the peak emission of visible region. From both of this figures, it
shows that the increase of annealing temperature on thin film from 350C to 450C
will increase the PL peak for both of UV and visible region. However, further
increase of annealing temperature from 500C to 550C will decrease the PL peak for
both of the region.
the temperature increases until 450C. The increase in PL peak emission is deduced
due to quality improvement of crystal after being annealed (Du n.d.).While further
increase of annealing temperature up to 500C and above shows the decreases of PL
peak emission. The crystalline quality of TiO2/ZnO decrease when the annealing
temperature increased up to 500C and above (Xu et al. 2010) Based on this
observation, the optimum annealing temperature for the synthesis of TiO 2/ZnO thin
film nanostructures is 450C.
as-grown
350
400
450
500
550
350
300
o
450 C
Intensity (a.u.)
250
200
150
400 C
100
350 C
o
500 C
50
550 C
as-grown
0
300
400
500
600
700
800
900
wavelength / nm
50
45
o
450 C
40
Intensity (a.u.)
35
as-grown
30
o
25
400 C
o
550 C
o
500 C
20
15
350 C
10
5
0
350
360
370
380
390
400
410
420
430
440
450
wavelength / nm
50
45
40
Intensity (a.u.)
35
30
25
20
15
10
5
0
50
100
150
200
250
300
350
400
450
500
550
Annealing Temperature ( C)
350
300
Intensity (a.u.)
250
200
150
100
50
0
0
100
200
300
400
500
600
Annealing Temperature ( C)
30
4.1.3
Figure 4.7 shows the FT-IR result of TiO2/ZnO thin film annealed with different
temperatures. All the films are analyzed in the wavenumber range of 400-4000 cm-1.
It is observed there is no absorption band from 1200 cm-1 to 4000 cm-1. Then, the
observation is conducted again by using the wavenumber range at 400 cm -1 to 1050
cm-1 as shown in Figure 4.8. The reduce of the wavenumber range is to analyzed the
absorption band more clearer, as there is no absorption band observed at the range
higher than 1200 cm-1.Figure 4.8 shows the present of strong absorption band for all
thin film of TiO2/ZnO at 540 cm-1 which assigned for Ti-O-Ti bond.(Sonone 2014)
There is also absorption band observed at 460 cm-1 that assigned as zinc oxide bond.
Based on this observation, it is assumed all the thin film of TiO2/ZnO that
coated with annealing temperature from 350C to 550C does not contain any
organic bonding such as aliphatic, C-C bond, alkyl, C-H bond and hydroxyl bond, COH. The thin films of TiO2/ZnO will also not have the hydroxyl bond because all of
the film has undergo annealing process.(Merouani 2008). This means during
annealing process the moisture has been lost. However, it is deduce that there is no
interaction between the chemical structures of TiO2 and ZnO. This might be due to
different layer of coating. As TiO2 layers is coated first then followed by ZnO layer.
Table 4.1 contain the chemical bond and their wavenumber that related to the
nanocrystalline of TiO2/ZnO.
31
as-grown
350
400
450
500
550
110
105
as-grown
o
550 C
o
500 C
100
Intensity (au)
350 C
o
450 C
95
90
400 C
85
80
400
800
1200
1600
2000
2400
2800
3200
3600
4000
-1
Wavenumber (cm )
as-grown
350
400
450
500
550
150
o
550 C
140
400 C
130
Intensity (a.u.)
500 C
120
450 C
110
350 C
as-grown
100
90
80
70
400
500
600
700
800
900
1000
-1
Wavenumber (cm )
32
Wavenumber (cm-1)
N-H stretch
3443
C-H stretch
2969
C-H stretch
2925
C=O stretch
1685
ZnO stretch
460-470
TiO2 stretch
510-540
33
CHAPTER 5
3.8
Conclusion
The structured of TiO2/ZnO thin film are prepared by sol-gel spin coating technique
on the glass substrate. Firstly,the glass substrate is coated by TiO2 film and annealed
with different temperature. Only then, ZnO film is coated on the TiO2 film and
forming TiO2/ZnO thin film. Here the effect of annealing temperature on optical
properties is studied by using UV-Vis, photoluminescence (PL) and FT-IR
measurement. The variation of annealing temperature contributes a great effect on
the optical properties of TiO2/ZnO structures.
From the UV-Vis result, it reveals that the increased of annealing temperature
on the thin film of TiO2/ZnO structures will causes a decrease in the transmittance at
the ultraviolet region and conversely cause an increase in thin film absorbance.
While at the ultraviolet region there is shifted of PL peak from 385 nm to 395
nm at annealing temperature 350C to 450C. This indicates the present of red shift.
34
Hence, the decrease of the optical band gap maybe due to the increase of crystalline
structure.
In the FT-IR measurement, all of the thin film shows a strong adsorption band
near 540 cm-1. This reveals the vibration properties of TiO2. There is also presence of
absorption band at 460 cm-1 which indicates the vibration properties of ZnO. There is
no absorption band found at the range of 2000 cm-1 to 4500 cm-1. This means there is
no organic compound present in the thin film. The hydroxyl bond also not present,
the moisture has been removed during the annealing process.
3.9
Recommendation
TiO2/ZnO
nanostructures
can
35
also
be
used
in
the
future
CITED REFERENCES
36
Li, G., Chen, L., Graham, M. E. et al. (2007) A comparison of mixed phase titania
photocatalysts prepared by physical and chemical methods: The importance of
the solid-solid interface. J Mol Catal A Chem, 275: 3035
Mechiakh, R., Sedrine, N.B., and Chtourou, R. (2011) Solgel Synthesis,
Characterization and Optical Properties of Mercury-Doped TiO2 Thin Films
Deposited on ITO Glass Substrates. Applied Surface Science 257(21): 91039.
Merouani, A. (2008) Spectroscopic FT-IR Study of TiO2 Films Prepared by Sol-Gel
Method. 6(62): 15154.
Nicolet, Thermo, and Corporation All. (2001) Introduction to Fourier Transform
Infrared Spectrometry.
Properties, General. (2009) General Properties of ZnO.
Savi, Bruna Martinello, Larissa Rodrigues, and Adriano Michael Bernardin. (2012)
Synthesis of ZnO Nanoparticles by Sol- Gel Processing. 18.
Senthil, T.S., Muthukumarasamy, N., Agilan, S., Thambidurai, M., and
Balasundaraprabhu, R. (2010) Preparation and Characterization of
Nanocrystalline TiO2 Thin Films. Materials Science and Engineering: B
174(1-3): 1024.
Sonone, R. S. (2014) Structural and Electroluminescence Properties of Pure PVK
and Doped Tio2 Polymer Thin Films. 1(1): 8794.
Stoyanova, A., Hitkova, H., Iordanova, R., Ivanova, N., and Sredkova, M. (2013)
Synthesis and Antibacterial Activity of TiO2/ ZnO Nanocomposites Prepared
via Nonhydrolytic Route a ) b ). 15461.
Streams, Indian. (2011) Synthesis By Sol-Gel Method And Characterization Of Zno
Nanoparticles. 1(1): 25.
Szaciowski, K., Macyk, W., Drzewiecka-Matuszek, A., et al. (2005) Bioinorganic
photochemistry: Frontiers and mechanisms. Chem Rev, 2005, 105: 26472694
Thompson, T.L., Yates Jr, J. T. (2006) Surface science studies of the
photoactivation of TiO2-New photochemical processes. Chem Rev,106: 4428
4453
Upstone, S. L. (2000) Ultraviolet / Visible Light Absorption Spectrophotometry in
Clinical Chemistry. 16991714.
Wang, X., Shi, F., Gao, X., Fan, C., Huang, W., and Feng, X. (2013) A Solgel
Dip/spin Coating Method to Prepare Titanium Oxide Films. Thin Solid Films
548: 3439.
37
Xu, L., Shen, H., Li, X., and Zhu, R. (2010) Influence of Annealing Temperature
on the Photoluminescence Property of ZnO Thin Film Covered by TiO2
Nanoparticles. Journal of Luminescence 130(11): 212327.
Zhang, Q., L, G., J, G. (2000) Effects of calcination on the photocatalytic properties
of nanosized TiO2 powders prepared by TiCl4 hydrolysis. Appl Catal B
Environ, 26: 207215
38
APPENDICES
1.
as-grown
350
400
450
500
550
80
as grown
% Transmittance
60
350 C
o
550 C
o
450 C
o
500 C
40
400 C
20
200
300
400
500
600
700
800
Wavelength / nm
as-grown
350
400
450
500
550
6
o
500 C
o
550 C
Absorbance (a.u.)
2.
400 C
o
450 C
o
350 C
as-grown
400
600
Wavelength / nm
39
800
3.
PL
result
of
TiO2/ZnO
with
different
annealing
temperature
as-grown
350
400
450
500
550
350
300
o
450 C
Intensity (a.u.)
250
200
150
400 C
100
350 C
o
500 C 550oC
50
as-grown
0
300
400
500
600
700
800
900
wavelength / nm
4.
as-grown
350
400
450
500
550
110
105
as-grown
o
550 C
o
500 C
Intensity (au)
100
350 C
o
450 C
95
90
400 C
85
80
400
800
1200
1600
2000
2400
2800
-1
Wavenumber (cm )
40
3200
3600
4000
CURRICULUM VITAE
A.
Personal profile
Full name
National IC number
910618-14-6478
Birth date
Citizenship
Malaysian
Place of birth
Gender
Females
Correspondence address
013-2848236
Email address
sitirahayushahri@yahoo.com
B.
I enjoying reading, travelling and exploring places. I like to listen to music and I
enjoying making friend with people. I am fluent in Bahasa Malaysia, good in English
and basic in Mandarin.
41
C.
Education background
1.
2.
2009-2011
3.
2007-2008
D.
Work experiences
Post
Place
Year
Industrial training
Department of Chemistry
2013
Related experiences
Post
Club
Year
Member
2011-2013
Applied Chemistry
Society (ACES)
42
2011-2014