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TM

FQB5N60C / FQI5N60C
600V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V

Low gate charge ( typical 15 nC)
Low Crss ( typical 6.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

D
!

D2-PAK
FQB Series

G!

I2-PAK
G D S

FQI Series

Absolute Maximum Ratings

Symbol
VDSS
ID

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

FQB5N60C / FQI5N60C
600

Units
V

4.5

- Continuous (TC = 100C)

2.6

18

IDM

Drain Current

VGSS

Gate-Source Voltage

30

EAS

Single Pulsed Avalanche Energy

(Note 2)

210

mJ

IAR

Avalanche Current

(Note 1)

4.5

EAR

(Note 1)

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TA = 25C)*

10
4.5
3.13

mJ
V/ns
W

PD

Power Dissipation (TC = 25C)

100
0.8
-55 to +150

W
W/C
C

300

TJ, TSTG
TL

- Pulsed

(Note 1)

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case

Typ
-

Max
1.25

Units
C/W

RJA

Thermal Resistance, Junction-to-Ambient*

40

C/W

RJA

Thermal Resistance, Junction-to-Ambient

62.5

C/W

* When mounted on the minimum pad size recommended (PCB Mount)

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

FQB5N60C / FQI5N60C

QFET

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Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

600

--

--

--

0.6

--

V/C

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/
TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

VDS = 600 V, VGS = 0 V

--

--

VDS = 480 V, TC = 125C

--

--

10

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

2.0

--

4.0

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 2.25 A

--

2.0

2.5

gFS

Forward Transconductance

VDS = 40 V, ID = 2.25 A

--

4.7

--

--

515

670

pF

--

55

72

pF

--

6.5

8.5

pF

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 300 V, ID = 4.5A,

RG = 25
(Note 4, 5)

VDS = 480 V, ID = 4.5A,

VGS = 10 V
(Note 4, 5)

--

10

30

ns

--

42

90

ns

--

38

85

ns

--

46

100

ns

--

15

19

nC

--

2.5

--

nC

--

6.6

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

4.5

ISM

--

--

18

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 4.5 A
Drain-Source Diode Forward Voltage

--

--

1.4

trr

Reverse Recovery Time

--

300

--

ns

Qrr

Reverse Recovery Charge

--

2.2

--

VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/s

(Note 4)

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

FQB5N60C / FQI5N60C

Electrical Characteristics

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FQB5N60C / FQI5N60C

Typical Characteristics

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :

ID, Drain Current [A]

10

10

ID, Drain Current [A]

10

-1

10

150 C
o

-55 C
o

25 C

10

Notes :
1. 250 s Pulse Test
2. TC = 25

Notes :
1. VDS = 40V
2. 250 s Pulse Test
-1

10

-2

10

-1

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

6
1

10

IDR, Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

VGS = 10V

VGS = 20V
1

10

150
Notes :
1. VGS = 0V
2. 250 s Pulse Test

25

Note : TJ = 25
-1

0
0

10

10

0.2

0.4

0.6

ID, Drain Current [A]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

1.0

1.2

1.4

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

1000

12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd

600

Coss
400
Notes ;
1. VGS = 0 V
2. f = 1 MHz

Crss

200

VGS, Gate-Source Voltage [V]

Ciss

VDS = 120V

10

800

Capacitance [pF]

0.8

VSD, Source-Drain voltage [V]

VDS = 300V
8

VDS = 480V

2
Note : ID = 4.5A

0
-1
10

10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2003 Fairchild Semiconductor Corporation

12

16

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A, October 2003

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FQB5N60C / FQI5N60C

Typical Characteristics

(Continued)

1.2

3.0

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

150

2.0

1.5

1.0
Notes :
1. VGS = 10 V
2. ID = 2.25 A

0.5

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by RDS(on)

100 s

10

10 ms
100 ms
DC

10

ID, Drain Current [A]

ID, Drain Current [A]

1 ms

-1

10

Notes :

0
25

-2
0

10

10

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

10

10

10

50

75

100

125

150

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

10

D = 0 .5

0 .2
N o te s :
1 . Z JC( t ) = 1 . 2 5 / W M a x .
2 . D u ty F a c to r , D = t1/t2
3 . T J M - T C = P D M * Z JC( t )

0 .1
10

-1

0 .0 5
0 .0 2
0 .0 1

PDM

JC

(t), T h e rm a l R e s p o n s e

VDS, Drain-Source Voltage [V]

s in g le p u ls e
10

t1

-2

10

t2
-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

www.DataSheet4U.com

FQB5N60C / FQI5N60C

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2003 Fairchild Semiconductor Corporation

ID (t)
VDS (t)

VDD
tp

Time

Rev. A, October 2003

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FQB5N60C / FQI5N60C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

www.DataSheet4U.com

FQB5N60C / FQI5N60C

Package Dimensions

4.50 0.20

9.90 0.20

+0.10

2.00 0.10

2.54 TYP

(0.75)

~3

0.80 0.10

1.27 0.10

2.54 0.30

15.30 0.30

0.10 0.15

2.40 0.20

4.90 0.20

1.40 0.20

9.20 0.20

1.30 0.05

1.20 0.20

(0.40)

D2-PAK

+0.10

0.50 0.05

2.54 TYP

9.20 0.20

(2XR0.45)

4.90 0.20

15.30 0.30

10.00 0.20

(7.20)

(1.75)

10.00 0.20
(8.00)
(4.40)

0.80 0.10

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

www.DataSheet4U.com

(Continued)

I2-PAK
4.50 0.20

(0.40)

9.90 0.20

+0.10

MAX13.40

9.20 0.20

(1.46)

1.20 0.20

1.30 0.05

0.80 0.10

2.54 TYP

2.54 TYP

10.08 0.20

1.47 0.10

MAX 3.00

(0.94)

13.08 0.20

)
5

(4

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

FQB5N60C / FQI5N60C

Package Dimensions

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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
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Across the board. Around the world.
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MicroPak
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MSXPro
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OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
POP

Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START
SPM
Stealth
SuperSOT-3

SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TINYOPTO
TruTranslation
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UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2003 Fairchild Semiconductor Corporation

Rev. I5