2.1
2.2
2.3
2.4
Diode as a Switch....................................................................................
Properties of PN Junction ........................................................................
Common Diode Types.............................................................................
Typical Diode Ratings..............................................................................
15
15
17
17
2.5
2.6
2.7
2.8
19
19
22
24
25
15
Copyright 2001 by Academic Press
16
A. I. Maswood
(a) Symbol
A
Metal
Ceramic
insulator
IF
FIGURE 2.1 Power diode: (a) symbol; (b) and (c) types of packaging.
Forward
I
Forward
Reverse
o
Reverse
Forward
I
Reverse
r
Forward
o
vo
Limit of
operating
voltage
trr = ta + tb
Reverse
IF
trr
IF
ta
o
0.251RR
IRR
tb
(a) Soft recovery
(2.1)
IRR
2QRR
(di/dt )
trr
ta
t
tb
(b) Abrupt recovery
17
di
2QRR
dt
di
2QRR
dt
In case of current exceeding the rated value, their case temperature will rise. For stud-mounted diodes, their thermal
resistance is between 0.1 and 1 C/W.
Zener diode: Its primary applications are in the voltage
reference or regulation. However, its ability to maintain a certain voltage depends on its temperature coefcient and the
impedance. The voltage reference or regulation applications
of zener diodes are based on their avalanche properties. In the
reverse biased mode, at a certain voltage the resistance of these
devices may suddenly drop. This occurs at the zener voltage
VX , a parameter the designer knows beforehand.
Figure 2.4 shows a circuit using a zener diode to control a
reference voltage of a linear power supply. Under normal operating condition, the transistor will transmit power to the load
(output) circuit. The output power level will depend on the
transistor base current. A very high base current will impose a
large voltage across the zener and it may attain zener voltage
VX , when it will crush and limit the power supply to the load.
1 di 2
2
t = 1/2 20 A/s (5 106 ) = 50 C
2 dt rr
Input
Hence,
Regulator
transistor
IRR =
20
A
2 50 C = 44.72 A
s
Zener
Diode
Output
18
A. I. Maswood
A
V1
D1
Dbreak
+
Vd1
-N
Iaverage = 50
VRL
Dbreak
D2
V2
Irms =
502
Input Voltages
Sometimes, a surge current rating and its permissible duration is also given in a datasheet. For protection of diodes and
other semiconductor devices, a fast acting fuse is required.
These fuses are selected based on their I 2 t rating which is
normally specied in a datasheet for a selected diode.
400V
V(V2:+)
V(V1:+)
D1 Conducting
0V
500V
D2 Conducting
Load Voltage
V(R1:1,R1:2)
Peak Inverse voltage (when it is not conducting)
across diode D1
SEL>>
500V
60ms
70ms
80ms
90 ms
Current
400V
0.2
= 22.36 A
1
Ipeak = 50 A
400V
0.2
= 10 A
1
50A
0.2 ms
1
2
Time (ms)
19
RS C S
(2.2)
VS
IRR
(2.3)
Cs
Vs
Rs
D1
Vs
R1
C1
R2
C2
D2
D3
R3
C3
Tutorial 2.1
20
A. I. Maswood
I
L= 10uH
LL
2
t3 t 2 =
+
ldf
Vs = 200 V
RL
DF
Is
diS
= 200+(10106 )(20106 ) = 400V
dt
Tutorial 2.2
20A 0 s
t3
time (s)
t1
20 A
t2
loop consisting of the LL, RL, and DF. The load inductance, LL is assumed to be shorted. Hence, when the
switch is closed, the loop equation is:
V =L
diS
dt
from which
V
200
diS
=
=
= 20 A/s
dt
L
10
At the moment the switch is open, the same current
keeps owing in the right-hand side loop. Hence,
t 2 t1 =
20 A
= 1 s
20 A/s
diS
did
=
= 20 A/s
dt
dt
from time zero to time t1 the current will decay at a
rate of 20 A/s and will be zero at t1 = 20/20 = 1 s. The
reverse recovery current starts at this point and, according to the given condition, becomes 20 A at t2 . From
this point on, the rate of change remains unchanged at
20 A/s. Period t2 t1 is found as:
20 A
= 2 s
10 A/s
Diode
Inductor
VL
+
VSin
VR
Resistor
21
VL
+
Vsin
VR
Resistor
Diode
Inductor
VL
+
VSin
VR
Resistor
di
+Ri =0
d
(2.6)
i() = A e R/L
(2.7)
Inductor
E
sin( )
Z
E
sin()
Z
(2.9)
(2.10)
VOAVG
E
=
2
sin d =
0
E
[1 cos()]
2
(2.11)
22
A. I. Maswood
LT
DT
1
V2
3
10 mH
RT
Dbreak
5
100
Current through the diode
(Note the phase shift
between V and I)
Input voltage
100
00V
V(V2:+)
I(DT)5
Voltage across R
Voltage across L
L>>
00V
23
D1
D3
D4
D2
RL
VS
D1, D2 Conducting
0ms
D3, D4 Conducting
80ms
70ms
90ms
C. As voltage multiplier
Connecting diode in a predetermined manner, an ac signal can
be doubled, tripled, and even quadrupled. This is shown in
Fig. 2.18. As evident, the circuit will yield a dc voltage equal to
2Vm . The capacitors are alternately charged to the maximum
value of the input voltage.
2Vm
, where Vm is the peak input voltage
Doubler
Quadrupler
Vc
2Vm
Vm
Vo
Vm cos(t)
+2Vm
+2Vm
Vo = Vc + Vi = Vm (1 + sin(t ))
+2Vm
+Vm
Vm sin(t)
Vo
Vi
24
A. I. Maswood
forward current (IF ) and the peak inverse (VRRM ) voltage. For
example, the designer chooses the diode type V30 from the
table in Fig. 2.19 because it closely matches their calculated
values of IF and VRRM without going over. However, if for
some reason only the VRRM matches but the calculated value
of IF comes higher, one should go for diode H14, and so on.
Similar concept is used for VRRM .
VRRM(V)
Type
V30
H14
V06
V03
U05
U15
50 100 200 300 400 500 600 800 1000 1300 1500
-
- yes
yes yes yes yes yes yes yes
- yes - yes yes
- yes
- yes - yes yes
- yes
yes yes
yes yes
yes
yes
yes yes
yes yes
yes
yes
-
yes
-
yes
-
FIGURE 2.19 Table of diode selection based on average forward current, IF (AV ) and peak inverse voltage, VRRM (courtesy of Hitachi semiconductors).
Type
V30J
V30L
V30M
V30N
VRRM
800
1000
1300
1500
VRSM
1000
1300
1600
1800
IF(AV)
IFSM
I 2t
A2s
Tj
50 ~ +150
Storage Temperature
Ts1g
50 ~ +150
Notes
(1) Lead Mounting: Lead temperature 300C max. to 3.2 mm from body for 5 sec. max.
(2) Mechanical strength: Bending 90 2 cycles or 180 1 cycle, Tensile 2kg, Twist 90 l cycle.
CHARACTERISTICS (TL=25C)
Symbols
Units
Min.
Typ.
Max.
IRRM
0.6
10
VFM
1.3
trr
3.0
C/W
80
50
Item
Rth(j-a)
Rth(j-1)
Test Conditions
IF = 2 mA, VR =15 V
Lead length = 10 mm
FIGURE 2.20 Details of diode characteristics for diode V30 selected from Fig. 2.19.
25
200
160
L = 10 mm
20 mm
25 mm
120
80
L
40
PC board (100x180x1.6t)
Copper foil (5.5)
0.1
0.2 0.3
0.4
0.5
Average forward current (A)
10
TL = 150C
50 f
TL = 25C
D.U.T
0
22 s
0.1Irp
lrp
2mA
600
15 V
trr
0
1
2
3
4
Peak forward voltage drop (V)
15 V
1.0
0.1
0.6
100
1. N. Lurch, Fundamentals of Electronics, 3rd ed., John Wiley & Sons Ltd.,
New York, 1981.
2. R. Tartar, Solid-State Power Conversion Handbook, John Wiley & Sons
Ltd., New York, 1993.
3. R.M. Marston, Power Control Circuits Manual, Newnes circuits manual
series. Butterworth Heinemann Ltd., New York, 1995.
4. Internet information on Hitachi Semiconductor Devices,
http://semiconductor.hitachi.com.
5. International rectier, Power Semiconductors Product Digest, 1992/93.
6. Internet information on, Electronic Devices & SMPS Books,
http://www.smpstech.com/books/booklist.htm.
0.8
DC
0.6
Single-phase(50Hz)
0.4
0.2
References
0.6