UNISONIC TECHNOLOGIES CO.

, LTD
8N65

Power MOSFET

8A, 650V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 8N65 is a high voltage and high current power

MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

FEATURES

* RDS(ON) = 1.4@VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION

Ordering Number
Lead Free
Halogen Free
8N65L-TA3-T
8N65G-TA3-T
8N65L-TF1-T
8N65G-TF1-T
8N65L-TF3-T
8N65G-TF3-T
8N65L-T2Q-T
8N65G-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source

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Copyright 2012 Unisonic Technologies Co., Ltd

Package
TO-220
TO-220F1
TO-220F
TO-262

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S

Packing
Tube
Tube
Tube
Tube

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ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified)

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
30
V
Avalanche Current (Note 2)
IAR
8
A
8
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
32
A
230
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
147
W
Power Dissipation
PD
TO-220F/TO-220F1
48
W
Junction Temperature
TJ
+150
C
Operating Temperature
TOPR
-55 ~ +150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25C
4. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C

THERMAL DATA

PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1

SYMBOL
JA

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JC

RATING
62.5
0.85
2.6

UNIT
C/W
C/W
C/W

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ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified)

PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

BVDSS
IDSS

VGS = 0 V, ID = 250 A
650
V
VDS = 650 V, VGS = 0 V
10
A
100 nA
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID =250A,Referenced to 25C
0.7
V/C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 A
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 4A
1.0 1.4

DYNAMIC CHARACTERISTICS
965 1255 pF
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
105 135 pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
12
16
pF
SWITCHING CHARACTERISTICS
16.5 45
ns
Turn-On Delay Time
tD(ON)
VDD = 325V, ID =8A,
Turn-On Rise Time
tR
60.5 130 ns
RG = 25
Turn-Off Delay Time
tD(OFF)
81 170 ns
(Note 1, 2)
Turn-Off Fall Time
tF
64.5 140 ns
Total Gate Charge
QG
28
36
nC
VDS= 520V,ID=8A,
Gate-Source Charge
QGS
4.5
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
QGD
12
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =8A
1.4
V
Maximum Continuous Drain-Source Diode
IS
8
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
32
A
Forward Current
Reverse Recovery Time
tRR
365
ns
VGS = 0 V, IS =8A,
dIF/dt = 100 A/s (Note 2)
Reverse Recovery Charge
QRR
3.4
C
Notes: 1. Pulse Test: Pulse width 300s, Duty cycle2%
2. Essentially independent of operating temperature

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TEST CIRCUITS AND WAVEFORMS

D.U.T.

+
VDS
-

+
-

RG
Driver
VGS

VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test

Same Type
as D.U.T.

Peak Diode Recovery dv/dt Test Circuit

VGS
(Driver)

Period

D=

P.W.

P. W.
Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

RL

VDS

VDS

90%

VDD

VGS
RG

D.U.T.

10V

VGS

10%
tD(ON)

tD(OFF)
tF

tR

Switching Test Circuit

Switching Waveforms

VGS
QG

10V
QGS

QGD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BVDSS
IAS

ID(t)

VDS(t)

VDD

tp

Unclamped Inductive Switching Test Circuit

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Time

Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS
On-State Characteristics

Drain Current, ID (A)

100

Transfer Characteristics

VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5 V
Bottorm:5.0V

10

10

Drain Current, ID (A)

5.0V

0.1

Notes:
1. 250s Pulse Test
2. TC=25C
0.1

25C
1

Reverse Drain Current, IDR (A)

Drain-Source On-Resistance, RDS(ON)

(ohm)

4
3
VGS=20V

2
1

5
10
15
Drain Current, ID (A)

20

Ciss

Capacitance (pF)

1500
1300
1100

Coss
Crss

500
300 Notes:
100 1. VGS=0V
2. f = 1MHz
0
0.1
1
10
Drain-SourceVoltage, VDS (V)

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25C
1

Notes:
1. VGS=0V
2. 250s Test
1.4 1.6

1.8

Source-Drain Voltage, VSD (V)

12
Gate-Source Voltage, VGS (V)

Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd

1900

900

10

150C

0.1
0.2 0.4 0.6 0.8 1.0 1.2

Capacitance Characteristics
(Non-Repetitive)

700

10
VGS=10V

1700

Body Diode Forward Voltage vs. Source

Current

TJ=25C

Gate-Source Voltage, VGS (V)

Notes:
1. VDS=40V
2. 250s Pulse Test

0.1
2

1
10
Drain-to-Source Voltage, VDS (V)

On-Resistance Variation vs. Drain

Current and Gate Voltage
6

150C

Gate Charge Characteristics

ID=7.5A

10

VDS=520V

VDS=300V
VDS=120V

6
4
2
0
0

10

15

20

25

30

Total Gate Charge, QG (nC)

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TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Temperature

1.2

On-Resistance Junction Temperature

Drain-Source On-Resistance, RDS(ON)
(Normalized)

Drain-Source Breakdown Voltage, BVDSS

(Normalized)

1.1

1.0

0.9

Note:
1. VGS=0V
2. ID=250A

0.8
-100

-50

50

100

150

200

2.5
2.0
1.5
1.0
Note:
1. VGS=10V
2. ID=4A

0.5
0.0
-100

-50

50

100

150

Junction Temperature, TJ (C)

Junction Temperature, TJ (C)

Maximum Safe Operating Area

Maximum Drain Current vs. Case

Temperature

100

10

Operation in This Area is Limited by RDS(on)

10s
100s

10

1ms
10ms

DC

1
Notes:
1. TJ=25C
2. TJ=150C
0.1 3. Single Pulse
1

200

8
Drain Current, ID (A)

Drain Current, ID (A)

3.0

6
4
2
0

10

100

1000

Drain-Source Voltage, VDS (V)

25

50

75

100

125

150

Case Temperature, TC (C)

Transient Thermal Response Curve

Thermal Response, JC (t)

D=0.5
D=0.2
D=0.1

0.1

D=0.05
0.02
0.01
Notes:

Single pulse 1. JC (t) = 0.85C/W Max.

2. Duty Factor, D=t1/t2
3. TJM-TC=PDMJC (t)

0.01
10-5

10-4

10-3

10-2

10-1

100

101

Square Wave Pulse Duration, t1 (sec)

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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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