Piezoelectricity:

Basics and applications

Friday Morning Meeting, 30.07.2010
Technical Talk
Petar Jurcevic

FFM, 30.07.2010

Overview
-A simple molecular model
-Mathematical modelling
-Some general notes
-Overview Motors
-Slip-stick motion
-Few calculation regarding Slip-stick motion motors

FFM, 30.07.2010

Definition: Piezoelectricity
Piezoelectricity is the ability of some materials to generate
an electric charge in response to applied mechanical
stress
The piezoelectric effect is revesible:
direct piezoelectric effect: charge separation due
to stress
converse piezoelectric effect: occurens of stress
and strain when electric field is applied

FFM, 30.07.2010

A simple molecular model

-

Only insulating materials

Insulating Ferroelectrica and materials with a permanent
dipol
In crystals: only crystals without symmetry centre
20 point groups

FFM, 30.07.2010

A simple molecular model

Without any external stress:

-Centers of charges coincide
-charges are reciprocally
cancelled
-electrical neutral unit cell

Lecture Notes, Tomasz G. Zielinski, Warsaw, Poland

FFM, 30.07.2010

A simple molecular model

Applied external stress:

-Internal structure is deformed
separation of charge centers
dipols are generated

Lecture Notes, Tomasz G. Zielinski, Warsaw, Poland

FFM, 30.07.2010

A simple molecular model

Poles inside material are mutually
cancelled
Charge occurs on surface
polarization of material

Lecture Notes, Tomasz G. Zielinski, Warsaw, Poland

FFM, 30.07.2010

Mathematical modeling
Piezoelectricity is the combination of:
The materials electrical behavior: D = E
And Hooks law: S = sT
D: electric displacement, : permittivity, E: electric field strength
S: strain, s: compliance, T: stress
The coupled strain-voltage equation:

S = sE T + dt E

converse piezoelectric effect

D=T E + dT

direct piezoelectric effect

dij,k =
FFM, 30.07.2010

Sij
Ek

piezoelectric coefficient
8

Mathematical Modeling
S11
S
21
S 31

S12
S 22
S 32

S13
T11

sE
S 23 ?????
T21

T31
S 33
3

T12
T22
T32

T13
T23
T33

S sE T
1 1

S : strain of the -normal in -direction

T : stress action in -direction on plane with -normal

11 0
0
E1
D
D12 = 0 22 0 E2
0
0 33
E3
D3
FFM, 30.07.2010

Polarization
direction

Mathematical Modeling
Piezoelectric
body

FFM, 30.07.2010

Stress & strain are symmetric tensors:

Voigt Notation
11 1; 22 2; 33 3; 23 4; 13 5; 12 6

10

An example
A proper voltage is applied over a free standing piezoelectric element to create a
electrical field of E=(4, 3, 2) V/m. The dimensions of the element are L=(1, 1, 5)mm.
The constants are: d31=4pm/V, d33=12pm/V, d15=0pm/V
What is the strain?

S1
0
0 d31

S
2

0
d31

S
0
0
d33
3

d0 d015 00

S
S5
15
0
0
0
S6
And L?

0 0 4E 12m/V

0 0 4E 12m/V

E1

0 0 12E 12m/V

E2 =

0
0

0
E3
0 0
0
0 0
0

8E 12

8E 12
4

3 24E 12

0
23

0
0

8E 15m
L = 8E 15m
120E 15m

FFM, 30.07.2010

11

Real behavior
Piezoelectric ceramics show hysteresis in
polarization

And they show hysteresis in strain

http://www.americanpiezo.com/piezo_theory/, 07.28.2010

FFM, 30.07.2010

12

Piezoresistive effect
- Change in resistivity due to applied mechanical stress.
- But differs from Piezoelectric effect: It changes only resistivity and does not
create an electric potential.
- Effect is mainly seen in semiconductors:

(
)
S

: Piezoresistivity, : origninal resistivity, S: strain

Mechanism:
- Change in inter-atomic spacing affects bandgaps
- Bandgaps might be shifted
- Shape might be affected -> change in effective mass

FFM, 30.07.2010

13

Electrostriction
-Change in shape by applying electrical field
- Proportional to the square of the field

Sij = ijkl Ek El
ikjl =

2
1 Sij
2 Ek El

-Is not reversible

-Occurs in all dielectric materials and in all 32 point groups
-Caused by randomly aligned electrical domains
-applied field aligns electrical domains
-opposite charges of domains attract each other
-material thickness is reduced along applied field
FFM, 30.07.2010

Eswar Prasad, Lecture Notes

14

Some piezoelectric materials

Naturally occuring:
-Quarz
-Topaz
-Rochelle salt
-many many others

-Cane sugar
-DNA
-Wood
-Tendon

-Collagen

Man-made crystals
-Gallium orthophosphate (GaPO4), a quartz analogic crystal
-Langasite (La3Ga5SiO14), a quartz analogic crystal
Man-made ceramics
-Barium titanate(BaTiO3)-Barium titanate was the first petzoelectric ceramic discovered
-Lead zirconate titanate (Pb[ZrxTi1x]O3 0<x<1)more commonly known as

PZT, lead zirconate titanate is the most common piezoelectric ceramic in use
today
-Lithium niobate (LiNbO3)

FFM, 30.07.2010

15

Applications
Sensor
-Microphones, Pick-ups
-Pressure sensor
-Force sensor
-Strain gauge

Actuators
-Loudspeaker
-Piezoelectric motors
-Nanopositioning in AFM, STM
-Acuosto-optic modulators
-Valves

High voltage and powersource

-Cigarette lighter
-Energy harvesting
-AC voltage multiplier

Frequency standart
FFM, 30.07.2010

16

Piezoelectric motors
-Traveling wave motor
-Inchworm motor
-Piezo ratchet motor
-Stepping sotor using slip-stick motion

FFM, 30.07.2010

17

Traveling wave motor

1996 Smart Mater. Struct. 5 361

FFM, 30.07.2010

http://www.technohands.co.jp/en/, 07.28.2010
18

Inchworm Motor

FFM, 30.07.2010

http://en.wikipedia.org/wiki/Piezoelectric_motor, 07.28.2010
19

Piezo ratchet stepping motor

FFM, 30.07.2010

http://en.wikipedia.org/wiki/Piezoelectric_motor, 07.28.2010
20

ANRv51/RES

FFM, 30.07.2010

21

Slip-Stick Inertial Motion

1 2: Slow rising flank of
voltage, Rod and table
move simutaneously

2 3: Fast decreasing
voltage flank, piezo
contracts fast and rod
slips through table,
inertia is overcome
Conversion of motion:
Signal is inverted in time,
not in voltage
Attocube systems AG, Technical note

FFM, 30.07.2010

22

Currents
at 1000Hz slow rising flank or loading voltage: rise 1ms
fast falling flank of discharge voltage:
f all 10s

I=

CU

CP,RT = 2.8F

CP,LT = 0.2F

dURT = 30V

dULT = 70V

Irise,RT = 84mA
If all,RT = 8.4A

| I |average,RT =167mA
FFM, 30.07.2010

Irise,LT = 14mA
If all,LT = 1.4A

| I |average,LT =28mA
23

Effects of resistive wiring

70V sawtooth signal
1F capacitance

RC time constant

= RC

Cabling capacitance of up
to 10nF has barely no
effect

Attocube systems AG, Technical note: Effects of resistive wiring

FFM, 30.07.2010

24

Heat dissipation
Assumption: Ffriction=5N, Step size: 100nm
At 1000Hz

500nJ

500W

Electrical loss: P = CU 2 f tan(), 1

P = 17mW
Rotator has 2 piezos

2P, t90 30s

U 1.1J

FFM, 30.07.2010

25

Absolut position encoder

Position is read out with a potentiometer
RAW depends on T
RAB depends on T
But, RAW/RAB is T independent in
equilibrium
Absolut position
http://www.markallen.com/teaching/ucsd/147a/lectures
/lecture3/1.php, 07.29.2010

Encoder has a blind spot of about 40

FFM, 30.07.2010

26

Did you really pay attention?

FFM, 30.07.2010

15

27