June 2010

1. In a degenerate n-type
semiconductor the fermilevel lies
(A) within the conduction band
(B) below the conduction band
(C) within the valance band
(D) above the valance band
2. The threshold voltage of
enhancement mode MOSFET can
be adjusted by adjusting the
(A) channel doping
(B) channel length
(C) source doping
(D) drain doping
21. Assertion (A) : JFET is used in
automatic gain control circuits.
36. List I
List
II
(a) p-n
junctiondiode(i)Referencevoltage
(b) Zener diode(ii)Pinch-off
(c) MOSFET
(iii)Negative
resistance
(d) Tunneldiode(iv) Diffusion
Codes :
(a) (b) (c) (d)
(A) (iv) (i) (ii) (iii)
(B) (i) (ii) (iii) (iv)
(C) (iii) (iv) (ii) (i)
(D) (iv) (iii) (i) (ii)

Reason (R) : Its variable voltage

register property helps gain
control.
31. What is the correct sequence
of the following step in the
fabrication step of a monolithic,
bipolar junction transistor ?
1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. Epi-layer formation
Select the correct sequence using
the codes given below :
Codes :
(A) 3, 4, 1, 2
(B) 4, 3, 1,
2
(C) 3, 4, 2, 1
(D) 4, 3, 2,
1

Dec 2010
1. Which diode exhibits negative
resistance characteristics ?
(A) Zener diode
(B) Tunnel diode
(C) Schottky diode

(D) p-n junction diode

2. The effective mass of an

electron in a band with a given (E,
K) relationship is given by

5. A field effect transistor is a

(A) current controlled device
(B) voltage controlled device
(C) gain controlled device
(D) drain controlled device
21. Assertion (A) : At room
temperature, the Fermi level in a ptype semiconductor lies above the
valance band, whereas that in the
n-type semiconductor lies below
the conduction band.
Reason (R) : At room
temperature, the p-type
semiconductor is rich in holes
whereas the n-type semiconductor
is rich in electrons.
23. Assertion (A) : In the normal
operation of BJT the emitter diode
and collector diode are forward
biased.
Reason (R) : In the active region
the BJT can provide class-A
operation.

28. Assertion (A) : In Hall effect,

the open circuit transverse voltage
developed by a current carrying
semiconductor with a steady
magnetic field imposed
perpendicular to the current
direction has opposite signs of n
type and p-type semiconductors.
Reason (R) : The magnetic field
pushes both the holes and the
electrons in the same direction.

31. Consider the devices.

1. JFET 2. MOSFET
3. BJT 4. CMOS
The correct sequence in which the
input impedance decreases is
(A) 2, 1, 4, 3 (B) 3, 1, 4, 2
(C) 4, 2, 1, 3 (D) 1, 4, 2, 3
32. Consider the following steps :
1. Etching
2. Exposure of ultra violet radiation
3. Stripping
4. Developing
After a wafer has been coated with
photoresist, the correct sequence
of these steps in photolithography
is
(A) 2, 4, 3, 1 (B) 2, 4, 1, 3
(C) 4, 2, 1, 3 (D) 3, 2, 4, 1
36. List I
List II
(a) BJT
(i)Transconductance
(b) JFET
(ii)Breakdowndiodes
(c) Avalanche effect
(iii) Photo
masking
(d) IC fabrication (iv) Emitter
follower
Codes :
(a) (b) (c) (d)
(A) (iii) (ii) (i) (iv)
(B) (iv) (i) (ii) (iii)

(C) (i) (iv) (iii) (ii)

(D) (ii) (iii) (iv) (i)

june 2011
21. Assertion (A) : The ion
implantation is done by
bombarding ions to the
semiconductor surface.
Reason (R) : The doping is
changed by ion implantation.

33. The correct sequence of

fabrication of ICs are
I. Masking
II. Metallization
III. Application of photo resist
IV. Ion implantation
(A) I, II, III, IV
(B) III, I, IV, II
(C) I, II, IV, III
(D) I, III, IV, II

dec 2011
21. Assertion (A) : At room
temperature, the fermi level in a ptype semiconductor lies nearer to
the valence band whereas that in
n-type semiconductor lies nearer to
the conduction band.
Reason (R) : At room
temperature, the p-type
semiconductor has majority charge
carrier are holes whereas the ntype semiconductor, the majority
charge carriers are electrons.
35. Consider the following
devices :
I. BJT in CB mode
II. BJT in CE mode
III. JFET
IV. MOSFET
The correct sequence of these
devices in increasing order of their
input impedance is
(A) I, II, III, IV
(B) II, I, III, IV
(C) II, I, IV, III
(D) I, III, II, IV
38. List I
List II
(a) BJT(i) Voltage controlled
negative resistance
(b) MOSFET
(ii) High current
gain
(c) Tunnel diode (iii) Voltage
regulation
(d) Zener diode (iv) High input
impedance
Codes :
(a) (b) (c) (d)
(A) (ii) (iv) (i) (iii)
(B) (i) (ii) (iii) (iv)
(C) (ii) (i) (iv) (iii)
(D) (iv) (i) (ii) (iii)

june 2012
1. In a JFET the change in drain
current is due to the applied
(A) Electric field between S and D
(B) Electric field between G and S
(C) Magnetic field between S and D
(D) Magnetic field between G and S
2. The increase in temperature, the
electrical conductivity would
(A) increase in metals as well as
increase in semiconductors
(B) increase in metals but decrease
in semiconductors
(C) decrease in metals but increase
in semiconductors
(D) decrease in metals as well as in
semiconductors
22. Assertion (A) : The voltagecurrent
characteristic of tunnel diode
exhibits dynamic negative
resistance region.
Reason (R) : The negative
resistance occurs, therefore,
tunnel diode behaves as low
power oscillating device.
1. What is the resistivity of intrinsic
Germanium at 300 K, given that
its
carrier concentration is 2.5 1013
cm3
and electron and hole mobility is
3,800 cm2/vs and 1,800 cm2/vs
respectively ?
(A) 0.446 cm (B) 44.6 cm
(C) 0.022 cm (D) 22.2 cm

2. Volt-ampere equation for a p-n

diode
is given by
(A) I = Io (eVT/V 1)
(B) I = Io (eV/VT 1)
(C) I = Io (eV/VT 1)
(D) I = Io (eVT/V 1)
3. Consider an n-channel depletion
mode
MOSFET having following
parameters :
VTN = 2.5 V and Kn = 1.1 mA/V2
If VGS = 0V and VDS = 0.5 V, then
current ID, is
(A) 9.96 mA (B) 6.43 mA
(C) 2.48 mA (D) 5.56 mA
31. Consider the following
statements
regarding a semiconductor :
I. Acceptor level lies close
tovalence band.
II. Donor level lies close to valence
band.
III. n-type semiconductor behaves
as
a conductor at 0 K.
IV. p-type semiconductor behaves
as
an insulator at 0 K.
(A) I and II are correct.
(B) I and III are correct.
(C) II and III are correct.
(D) I and IV are correct.
41. Assertion (A) : A BJT is said
to be
operating in a saturation region if
both the junctions are forward
biased.
Reason (R) : In saturation region
collector doping concentration is
reduced.

51. Arrange the following in the

increasing
order of their forbidden energy gap
:
I. Conductors
II. Insulators
III. Germanium
IV. Silicon
(A) I, II, III, IV (B) I, II, IV, III
(C) I, III, IV, II (D) I, IV, III,II

61. Match the given list of devices

with
their respective application :
List-I List-II
(a) Diode (i) Rectification
(b) Tunnel
diode
(ii) Microwave
switching
(c) Zener diode (iii) Oscillator
(d) PIN diode (iv) Voltage
regulator
Codes :
(a) (b) (c) (d)
(A) (i) (iii) (iv) (ii)
(B) (i) (iv) (iii) (ii)
(C) (i) (ii) (iii) (iv)
(D) (i) (iv) (ii) (iii)

Dec 2012
1. For a JFET IDSS = 8 mA and peak
voltage Vp = 8V, what will be the
drain current for gate to source
voltage of 2V ?
(A) 4.5 mA (B) 8 mA
(C) 16 mA (D) 12 mA

2. The leakage current in silicon pn

junction at room temperature is of
the
order of
(A) mA (B) A
(C) A (D) Amp
21. Assertion (A) : Tunnel diode
provides oscillations in the
microwave region.
Reason (R) : The equivalent RC
model of tunnel diode gives
frequency in the microwave
region.

31. Consider the following four

transistors :
1. CE mode 2. CC mode
3. MOSFET 4. FET
The correct order in which, the
input
impedance increases is
(A) 1, 2, 4, 3 (B) 1, 2, 3, 4
(C) 1, 3, 2, 4 (D) 4, 3, 2, 1
36. List I List II
a. P-N junction diode i. base width
modulation
b. BJT ii. AGC
c. FET iii. 2 mV/C
d. MOSFET iv. low power
consumption
Codes :
abcd
(A) i ii iii iv
(B) ii i iii iv
(C) iv i ii iii
(D) iii i ii iv
1. An n-type silicon sample has a

resistivity of 5-cm at T = 300 K. If

mobility is n = 1350 cm2/V-s, then
donor impurity concentration is

2. In a JFET, the amplification factor ,

transconductance gm and the dynamic
drain resistance vd are related as

3. The figure shown below, is symbol of

(A) P channel depletion MOSFET

(B) P-channel enhancement MOSFET
(C) Complementary MOSFET
(D) P-channel JFET
31. Which of the following is/are valid
statement(s) ?
I. AJFET has one built-in diode.
II. AJFET has two built-in diode.
III. The pinch off voltage of a JFET
has same magnitude as that of
gate voltage.

IV. A JFET is a voltage controlled

device.
(A) I, III, IV (B) II, III,IV
(C) II, III (D) II, IV
41. Assertion (A) : An intrinsic
semiconductor is doped lightly with
p-type impurity. Its conductivity
decreases till a certain doping level
is reached.

Reason (R) : The mobility of both

holes and electrons decreases.
51. Arrange the following configurations
of BJT in the increasing order of their
input impedance.
I. CE II. CB
III. CC IV. Darlington pair
(A) III, II, IV, I (B) I, II, III, IV
(C) IV, III, II, I (D) II, I, III, IV