EE217: pn junctions (1)

M. B. Patil
www.ee.iitb.ac.in/~sequel
Department of Electrical Engineering
Indian Institute of Technology Bombay

M. B. Patil, IIT Bombay

Diodes

i
flow

M. B. Patil, IIT Bombay

pressure

Diodes

i
flow

pressure

* A diode may be thought of as an electrical counterpart of a directional valve

(check valve).

M. B. Patil, IIT Bombay

Diodes

i
flow

pressure

* A diode may be thought of as an electrical counterpart of a directional valve

(check valve).
* A check valve presents a small resistance if the pressure p > 0, but blocks the
flow (i.e., presents a large resistance) if p < 0.

M. B. Patil, IIT Bombay

Diodes

i
flow

pressure

* A diode may be thought of as an electrical counterpart of a directional valve

(check valve).
* A check valve presents a small resistance if the pressure p > 0, but blocks the
flow (i.e., presents a large resistance) if p < 0.
* In other words, flow is possible only in one direction.

M. B. Patil, IIT Bombay

Diodes

i
flow

pressure

* A diode may be thought of as an electrical counterpart of a directional valve

(check valve).
* A check valve presents a small resistance if the pressure p > 0, but blocks the
flow (i.e., presents a large resistance) if p < 0.
* In other words, flow is possible only in one direction.
* In a pn junction, pressure voltage, flow current.

M. B. Patil, IIT Bombay

Diodes

i
flow

pressure

* A diode may be thought of as an electrical counterpart of a directional valve

(check valve).
* A check valve presents a small resistance if the pressure p > 0, but blocks the
flow (i.e., presents a large resistance) if p < 0.
* In other words, flow is possible only in one direction.
* In a pn junction, pressure voltage, flow current.
* We will now try to understand how this rectifying behaviour comes about.

M. B. Patil, IIT Bombay

pn junction fabrication
p-type impurity
p

metal contact
p

xj

p
n

n-type substrate

n-type substrate

fabrication sequence (salient steps) metal contact

pn junction fabrication
p-type impurity
p

metal contact
p

xj

n
n-type substrate

n-type substrate

fabrication sequence (salient steps) metal contact

(Na Nd )

Na
Nd
x

(a)

actual doping profile

x
xj

(b)

pn junction fabrication
p-type impurity
p

metal contact
p

xj

n
n-type substrate

n-type substrate

fabrication sequence (salient steps) metal contact

p

(Na Nd )

Na
Nd
x

(a)

actual doping profile

acceptor density

xj

(b)
donor density

Na
Na

Nd

Nd
xj

(a)

xj
(b)

idealised doping profile

M. B. Patil, IIT Bombay

xj
(c)

pn junction in equilibrium
p
Na

xj

n
Nd

pn junction in equilibrium
p
Na

xp

xj

Nd

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

depletion region

neutral
n region

pn junction in equilibrium
p

xj

Na

xp

Nd

xj

xn

Ec

qVbi

EF
Ev
neutral
p region

depletion region

neutral
n region

Vbi

0
E
Em

pn junction in equilibrium
p

xj

Na

xp

Nd

xj

xn

Ec

qVbi

EF
Ev
neutral
p region

depletion region

neutral
n region

Vbi

0
E
Em
M. B. Patil, IIT Bombay

Let us check if this picture

is consistent with analytical
equations.

pn junction in equilibrium
p
Na

xp

xj

Nd

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

M. B. Patil, IIT Bombay

depletion region

neutral
n region

pn junction in equilibrium
p

xj

Na

Nd

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region


p(x) = Nv exp

M. B. Patil, IIT Bombay

depletion region

EF Ev (x)
kT

neutral
n region


, n(x) = Nc exp

Ec (x) EF
kT


.

pn junction in equilibrium
p

xj

Na

Nd

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region


p(x) = Nv exp

depletion region

EF Ev (x)
kT

neutral
n region


, n(x) = Nc exp

Ec (x) EF
kT

* As EF Ev (x) increases (from p to n), p decreases dramatically.

M. B. Patil, IIT Bombay


.

pn junction in equilibrium
p

xj

Na

Nd

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region


p(x) = Nv exp

depletion region

EF Ev (x)
kT

neutral
n region


, n(x) = Nc exp

Ec (x) EF
kT

* As EF Ev (x) increases (from p to n), p decreases dramatically.


.

* Similarly, as Ec (x) EF increases (from n to p), n decreases dramatically.

M. B. Patil, IIT Bombay

pn junction: built-in voltage Vbi

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

M. B. Patil, IIT Bombay

depletion region

neutral
n region

pn junction: built-in voltage Vbi

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

p(xp ) = Na and

M. B. Patil, IIT Bombay

depletion region

neutral
n region

p(xn )
= e (Ev (xp )Ev (xn ))/kT = e qVbi /kT .
p(xp )

pn junction: built-in voltage Vbi

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

p(xp ) = Na and

depletion region

p(xn )
= e (Ev (xp )Ev (xn ))/kT = e qVbi /kT .
p(xp )

Since p(xn ) n(xn ) = ni2 , we have

M. B. Patil, IIT Bombay

neutral
n region

pn junction: built-in voltage Vbi

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

p(xp ) = Na and

depletion region

neutral
n region

p(xn )
= e (Ev (xp )Ev (xn ))/kT = e qVbi /kT .
p(xp )

Since p(xn ) n(xn ) = ni2 , we have

ni2
p(xn )
n(xn )

=
= e qVbi /kT .
p(xp )
n(xn )
Na Nd

M. B. Patil, IIT Bombay

pn junction: built-in voltage Vbi

xp

xj

Ec

xn
qVbi

EF
Ev
neutral
p region

p(xp ) = Na and

depletion region

neutral
n region

p(xn )
= e (Ev (xp )Ev (xn ))/kT = e qVbi /kT .
p(xp )

Since p(xn ) n(xn ) = ni2 , we have

ni2
p(xn )
n(xn )

=
= e qVbi /kT .
p(xp )
n(xn )
Na Nd
!
kT
Na Nd
Vbi =
log
.
q
ni2

M. B. Patil, IIT Bombay

pn junction in equilibrium

neutral
p region
xp

xj

neutral
n region

1018

xn

xj

Ec

qVbi

EF

1014

1010

Ev
neutral
p region

xp depletion xn
region

106
depletion region

M. B. Patil, IIT Bombay

neutral
n region

102
19.7

20
x (m)

20.3

pn junction in equilibrium

neutral
p region
xp

xj

neutral
n region

1018

xn

xj

Ec

qVbi

EF

1014

1010

Ev
neutral
p region

xp depletion xn
region

106
depletion region

neutral
n region

102
19.7

* Note that p and n are shown on a logarithmic scale.

M. B. Patil, IIT Bombay

20
x (m)

20.3

pn junction in equilibrium

neutral
p region
xp

xj

neutral
n region

1018

xn

xj

Ec

qVbi

EF

1014

1010

Ev
neutral
p region

xp depletion xn
region

106
depletion region

neutral
n region

102
19.7

20
x (m)

20.3

* Note that p and n are shown on a logarithmic scale.

* As we move from one side of the depletion region to the other, p and n change
by several orders of magnitude.

M. B. Patil, IIT Bombay

pn junction in equilibrium

neutral
p region
xp

xj

neutral
n region

1018

xn

xj

Ec

qVbi

EF

1014

1010

Ev
neutral
p region

xp depletion xn
region

106
depletion region

neutral
n region

102
19.7

20
x (m)

20.3

* Note that p and n are shown on a logarithmic scale.

* As we move from one side of the depletion region to the other, p and n change
by several orders of magnitude.
* Let us look at p and n on a linear scale.

M. B. Patil, IIT Bombay

pn junction in equilibrium
neutral
p region

xp depletion xn
region

neutral
n region

2.5 1017

p
xp

xj

Ec

0
2.5 1017

xn

Nd

qVbi

EF

donor
density

Ev
neutral
p region

depletion region

Na
acceptor
density

neutral
n region
0
2 1017 Space charge"
/q

0
1 1017

19.7
M. B. Patil, IIT Bombay

20
x (m)

20.3

pn junction in equilibrium
neutral
p region

xp depletion xn
region

neutral
n region

2 1017
/q (exact)
xp

xj

xn
0

Ec

qVbi

EF

1 1017

(d)

Ev
neutral
p region

depletion region

neutral
n region

2 1017

Nd
/q (approx)

0
1 1017

19.7

M. B. Patil, IIT Bombay

Na

(e)
20
x (m)

20.3

pn junction in equilibrium
neutral
p region

xp depletion xn
region

neutral
n region

2 1017
/q (exact)
xp

xj

xn
0

Ec

qVbi

EF

1 1017

(d)

Ev
neutral
p region

depletion region

neutral
n region

2 1017

Nd
/q (approx)

0
1 1017

19.7

Na

(e)
20
x (m)

20.3

* Things become analytically tractable if we assume abrupt transitions in the

charge density depletion approximation
M. B. Patil, IIT Bombay

pn junction in equilibrium

M. B. Patil, IIT Bombay

pn junction in equilibrium
* With the depletion approximation, it is now easy to integrate to get the
electric field E and Z
then integrate E to get , using
Z
d

1
dE
dx, E =
= E=
= Edx.
dx


dx
p

n
qNd

qNa

pn junction in equilibrium
* With the depletion approximation, it is now easy to integrate to get the
electric field E and Z
then integrate E to get , using
Z
d

1
dE
dx, E =
= E=
= Edx.
dx


dx
p

n
qNd

qNa

0
E
Em
W

pn junction in equilibrium
* With the depletion approximation, it is now easy to integrate to get the
electric field E and Z
then integrate E to get , using
Z
d

1
dE
dx, E =
= E=
= Edx.
dx


dx
p

n
qNd

qNa

0
E
Em
W

Vbi

x
xp

Wp

xj

Wn

xn

pn junction in equilibrium
* With the depletion approximation, it is now easy to integrate to get the
electric field E and Z
then integrate E to get , using
Z
d

1
dE
dx, E =
= E=
= Edx.
dx


dx
p

n
qNd

qNa

0
E
Em
W

Vbi

Note that the potential profile

obtained after integration is
similar to our starting profile.
x

M. B. Patil, IIT Bombay

xp

Wp

xj

Wn

xn

pn junction in equilibrium
p

n
qNd

qNa

0
E
Em
W

Vbi

x
xp

Wp

xj

Wn

xn

pn junction in equilibrium
p

n
qNd

Charge neutrality Na Wp = Nd Wn .

Wn + Wp = W
0

qNa

0
E
Em
W

Vbi

x
xp

Wp

xj

Wn

xn

pn junction in equilibrium
p

n
qNd

Charge neutrality Na Wp = Nd Wn .

Wn + Wp = W
0
Wn =

qNa

0
E
Em
W

Vbi

x
xp

Wp

xj

Wn

xn

Na
W,
Na + Nd

Wp =

Nd
.
Na + Nd

pn junction in equilibrium
p

n
qNd

Charge neutrality Na Wp = Nd Wn .

Wn + Wp = W
0

qNa

0
E
Em
W

Vbi

x
xp

Wp

xj

Wn

xn

Wn =

Na
W,
Na + Nd

dE =

Wp =

Nd
.
Na + Nd

dx Em 0 =

1
qNa Wp .

pn junction in equilibrium
p

n
qNd

Charge neutrality Na Wp = Nd Wn .

Wn + Wp = W
0

qNa

0
E

Vbi

x
xp

xj

Wn

Na
W,
Na + Nd

dE =

Em =
Em

Wp

Wn =

xn

Wp =

Nd
.
Na + Nd

dx Em 0 =

1
qNa Wp .

qNa Wp qNd Wn
=
.

pn junction in equilibrium
p

n
qNd

Charge neutrality Na Wp = Nd Wn .

Wn + Wp = W
0

qNa

Vbi

x
xp

xj

dE =

Em =
Em

Wn

Na
W,
Na + Nd

xn

Wp =

Nd
.
Na + Nd

dx Em 0 =

1
qNa Wp .

qNa Wp qNd Wn
=
.

Z
Z
1
1
d = Edx Vbi = Em (Wp + Wn ) = Em W .
2
2

Wp

Wn =

pn junction in equilibrium
p

n
qNd

Charge neutrality Na Wp = Nd Wn .

Wn + Wp = W
0

qNa

M. B. Patil, IIT Bombay

xj

dE =

Vbi =
Vbi

xp

Wp =

Nd
.
Na + Nd

dx Em 0 =

1
qNa Wp .

Em =
Em

Wn

Na
W,
Na + Nd

qNa Wp qNd Wn
=
.

Z
Z
1
1
d = Edx Vbi = Em (Wp + Wn ) = Em W .
2
2

Wp

Wn =

xn

q Na Nd
W2 W =
2 Na + Nd

2 Na + Nd
Vbi .
q Na Nd

pn junction: built-in voltage Vbi

Calculate Vbi , W , Wp , Wn , and Em for a pn junction in equilibrium, with

Na = 5 1017 cm3 and Nd = 1017 cm3 at T = 300 K. (ni = 1.5 1010 cm3 )

M. B. Patil, IIT Bombay

pn junction: built-in voltage Vbi

Calculate Vbi , W , Wp , Wn , and Em for a pn junction in equilibrium, with

Na = 5 1017 cm3 and Nd = 1017 cm3 at T = 300 K. (ni = 1.5 1010 cm3 )
Vbi =

kT
Na Nd
5 1017 cm3 1017 cm3
log
= (0.0258 V ) log
= 0.86 V .
2
q
ni
(1.5 1010 cm3 )2

M. B. Patil, IIT Bombay

pn junction: built-in voltage Vbi

Calculate Vbi , W , Wp , Wn , and Em for a pn junction in equilibrium, with

Na = 5 1017 cm3 and Nd = 1017 cm3 at T = 300 K. (ni = 1.5 1010 cm3 )
Vbi =

kT
Na Nd
5 1017 cm3 1017 cm3
log
= (0.0258 V ) log
= 0.86 V .
2
q
ni
(1.5 1010 cm3 )2
s
2 Na + Nd
W =
Vbi
q Na Nd
s
2 11.8 8.85 1014 Coul/V-cm 6 1017 cm3
=
0.86 V
1.6 1019 Coul
5 1034 cm6

M. B. Patil, IIT Bombay

pn junction: built-in voltage Vbi

Calculate Vbi , W , Wp , Wn , and Em for a pn junction in equilibrium, with

Na = 5 1017 cm3 and Nd = 1017 cm3 at T = 300 K. (ni = 1.5 1010 cm3 )
Vbi =

kT
Na Nd
5 1017 cm3 1017 cm3
log
= (0.0258 V ) log
= 0.86 V .
2
q
ni
(1.5 1010 cm3 )2
s
2 Na + Nd
W =
Vbi
q Na Nd
s
2 11.8 8.85 1014 Coul/V-cm 6 1017 cm3
=
0.86 V
1.6 1019 Coul
5 1034 cm6
=

M. B. Patil, IIT Bombay

1.15 105 cm = 0.115 m.

pn junction: built-in voltage Vbi

Calculate Vbi , W , Wp , Wn , and Em for a pn junction in equilibrium, with

Na = 5 1017 cm3 and Nd = 1017 cm3 at T = 300 K. (ni = 1.5 1010 cm3 )
Vbi =

kT
Na Nd
5 1017 cm3 1017 cm3
log
= (0.0258 V ) log
= 0.86 V .
2
q
ni
(1.5 1010 cm3 )2
s
2 Na + Nd
W =
Vbi
q Na Nd
s
2 11.8 8.85 1014 Coul/V-cm 6 1017 cm3
=
0.86 V
1.6 1019 Coul
5 1034 cm6
=

Wn =

1.15 105 cm = 0.115 m.

Na
Nd
W = 0.096 m, Wp =
W = 0.019 m.
Na + Nd
Na + Nd

M. B. Patil, IIT Bombay

pn junction: built-in voltage Vbi

Calculate Vbi , W , Wp , Wn , and Em for a pn junction in equilibrium, with

Na = 5 1017 cm3 and Nd = 1017 cm3 at T = 300 K. (ni = 1.5 1010 cm3 )
Vbi =

kT
Na Nd
5 1017 cm3 1017 cm3
log
= (0.0258 V ) log
= 0.86 V .
2
q
ni
(1.5 1010 cm3 )2
s
2 Na + Nd
W =
Vbi
q Na Nd
s
2 11.8 8.85 1014 Coul/V-cm 6 1017 cm3
=
0.86 V
1.6 1019 Coul
5 1034 cm6
=

Na
Nd
W = 0.096 m, Wp =
W = 0.019 m.
Na + Nd
Na + Nd


qNa Wp
2Vbi
=
or
= 1.48 103 V/cm = 148 kV/cm

W

Wn =
Em

1.15 105 cm = 0.115 m.

M. B. Patil, IIT Bombay

pn junction in equilibrium: current densities

xj

xp
neutral
p region

xj
depletion
region

depletion
region

0 (cm3 )
0

(cm3 )

0
E

(kV/cm)

140
5 105

Jdiff
p

(kV/cm)
Jdiff
n

0
Jdrift
p

6 104

neutral
n region

2 1017

1 1017

140
6 104

xn

Jdrift
n

(A/cm2 )

19.84

20
x (m)

5 10

20

(A/cm2 )

20.12
x (m)

pn junction in equilibrium: current densities

xj

xp
neutral
p region

xj
depletion
region

depletion
region

0 (cm3 )

0
E

(cm3 )

(kV/cm)

140
5 105

Jdiff
p

(kV/cm)
Jdiff
n

Jdrift
n

(A/cm2 )

19.84

20
x (m)

M. B. Patil, IIT Bombay

5 10

dp
dx

Jndiff = +qDn

dn
dx

Jpdrift = qp p E

Jptotal = Jntotal = 0

0
Jdrift
p

Jpdiff = qDp

Jndrift = qn n E
E

6 104

neutral
n region

2 1017

1 1017

140
6 104

xn

20

(A/cm2 )

20.12
x (m)

pn junction under bias

10

I (mA)

area = A

0
Va

M. B. Patil, IIT Bombay

2
Va (V)

pn junction under bias

10

I (mA)

area = A

0
Va

* We now try to understand the I -V curve of a pn diode.

M. B. Patil, IIT Bombay

2
Va (V)

pn junction under bias

10

I (mA)

area = A

0
Va

2
Va (V)

* We now try to understand the I -V curve of a pn diode.

* We will assume that the reverse voltage is less than the breakdown voltage of
the diode.

M. B. Patil, IIT Bombay

pn junction under bias

10

I (mA)

area = A

0
Va

2
Va (V)

* We now try to understand the I -V curve of a pn diode.

* We will assume that the reverse voltage is less than the breakdown voltage of
the diode.
* We will also assume the p and n regions to be long (compared to the minority
carrier diffusion lengths).

M. B. Patil, IIT Bombay

pn junction under bias

Where does the voltage drop?
p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

M. B. Patil, IIT Bombay

p neutral
region

depletion
region

n neutral
region

n contact
region

pn junction under bias

Where does the voltage drop?
p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

p
n
* The contact voltages Vcontact
and Vcontact
remain constant, irrespective of the
applied voltage Va .

M. B. Patil, IIT Bombay

pn junction under bias

Where does the voltage drop?
p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

p
n
* The contact voltages Vcontact
and Vcontact
remain constant, irrespective of the
applied voltage Va .
p
n
* The voltage drops across the neutral regions (Vneutral
and Vneutral
) are negligibly
small. If they were not, a huge current would flow because of the large p and n
values in these regions.
(Note: Jpdrfit = qp p E, Jndrfit = qn n E.)

M. B. Patil, IIT Bombay

pn junction under bias

Where does the voltage drop?
p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

p
n
* The contact voltages Vcontact
and Vcontact
remain constant, irrespective of the
applied voltage Va .
p
n
* The voltage drops across the neutral regions (Vneutral
and Vneutral
) are negligibly
small. If they were not, a huge current would flow because of the large p and n
values in these regions.
(Note: Jpdrfit = qp p E, Jndrfit = qn n E.)

* The difference (Vbi Va ) therefore appears across the depletion region.

M. B. Patil, IIT Bombay

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

M. B. Patil, IIT Bombay

p neutral
region

depletion
region

n neutral
region

n contact
region

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

p
n
In equilibrium, Vcontact
Vbi + Vcontact
= 0.

M. B. Patil, IIT Bombay

n neutral
region

n contact
region

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

p
n
In equilibrium, Vcontact
Vbi + Vcontact
= 0.

p
n
Under bias, Vcontact
Vj + Vcontact
= Vp Vn = Va .

M. B. Patil, IIT Bombay

n neutral
region

n contact
region

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

p
n
In equilibrium, Vcontact
Vbi + Vcontact
= 0.

p
n
Under bias, Vcontact
Vj + Vcontact
= Vp Vn = Va .

Vj = Vbi Va .

M. B. Patil, IIT Bombay

n neutral
region

n contact
region

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

p
n
In equilibrium, Vcontact
Vbi + Vcontact
= 0.

p
n
Under bias, Vcontact
Vj + Vcontact
= Vp Vn = Va .

Vj = Vbi Va .
s 

2 Na + Nd
Since W =
Vj , the new value of Vj is accommodated by a change
q
Na Nd
in W .

M. B. Patil, IIT Bombay

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

p
n
In equilibrium, Vcontact
Vbi + Vcontact
= 0.

p
n
Under bias, Vcontact
Vj + Vcontact
= Vp Vn = Va .

Vj = Vbi Va .
s 

2 Na + Nd
Since W =
Vj , the new value of Vj is accommodated by a change
q
Na Nd
in W .
Example: Vbi = 0.85 V , Va = 0.6 V Vj = 0.85 0.6 = 0.25 V .

M. B. Patil, IIT Bombay

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

p
n
In equilibrium, Vcontact
Vbi + Vcontact
= 0.

p
n
Under bias, Vcontact
Vj + Vcontact
= Vp Vn = Va .

Vj = Vbi Va .
s 

2 Na + Nd
Since W =
Vj , the new value of Vj is accommodated by a change
q
Na Nd
in W .
Example: Vbi = 0.85 V , Va = 0.6 V Vj = 0.85 0.6 = 0.25 V .
r
p
W (0.6 V )
0.25
W Vj ,
=
= 0.54.
W (0 V )
0.85
M. B. Patil, IIT Bombay

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

M. B. Patil, IIT Bombay

p neutral
region

depletion
region

n neutral
region

n contact
region

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

If a negative Va = VR (VR being the reverse bias), Vj = Vbi (VR ) = Vbi + VR

increases, and the depletion region becomes wider.

M. B. Patil, IIT Bombay

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

If a negative Va = VR (VR being the reverse bias), Vj = Vbi (VR ) = Vbi + VR

increases, and the depletion region becomes wider.

Example: Vbi = 0.85 V , Va = 5 V Vj = 0.85 (5) = 5.85 V .

M. B. Patil, IIT Bombay

pn junction under bias

p
Vcontact

metal

p
Vneutral

n
Vneutral

Vj

p+

n
Vcontact

n+
p

Vp

metal
Vn

xj
p contact
region

p neutral
region

depletion
region

n neutral
region

n contact
region

If a negative Va = VR (VR being the reverse bias), Vj = Vbi (VR ) = Vbi + VR

increases, and the depletion region becomes wider.

Example: Vbi = 0.85 V , Va = 5 V Vj = 0.85 (5) = 5.85 V .

r
p
W (5 V )
5.85
=
= 2.62.
W Vj ,
W (0 V )
0.85

M. B. Patil, IIT Bombay

pn junction under forward bias

p

xj

Ec

xj

qVbi

EF

Ev
p

q (Vbi Va )

Ec

EF n

EF p
Ev

qNd

0
qNa
0
E
Em

E
Em

(a) Equilibrium
M. B. Patil, IIT Bombay

(Vbi Va )

Vbi

(b) Forward bias

pn junction under reverse bias

Ec

xj

Ec

EF p
qVbi

xj

q (Vbi + VR )

Ev

EF
EF n

Ev

qNd

qNa
0
E

Em

Em

Vbi
(Vbi + VR )

M. B. Patil, IIT Bombay

(a) Equilibrium

(b) Reverse bias