Bipolar Junction Transistors - III

(BJT-III )
Analyzing Transistor Amplifiers

Transistor as an Amplifier
Choose a proper Q-point
Make sure that the input is
such that the transistor does
not get driven outside its
active region

To Analyze a BJT Amplifier

Short all the bypass capacitors and connect power supplies (i.e.
VCC, VBB etc.) to ground. From the point of view of AC signals, capacitors
are SHORT-CIRCUITS and the power supply points are equivalent to
GROUND.

Replace transistor with its small signal equivalent model

2

Basic BJT Amplifier

VCC

C1, C2 - Coupling Capacitors

C3 Emitter Bypass Capacitor
RC

R1
C

C2
+

C1
B

RS
+

E
vo

R2

RE

C3

vS
-

C1, C2, C3 values are chosen high enough so that

under ac these act as a short circuit.
3

The coupling capacitor (C1,C2) is used to pass the ac input

signal and block the dc voltage from the preceding circuit. (ACCoupled Amplifier)
This prevents dc in the circuitry on the left of the coupling
capacitor from affecting the bias.
The coupling capacitor also blocks the bias of the transistor
from affecting the input signal source.
Special DC-Coupled Amplifiers needed if you want to amplify a
signal which has a DC component!
The emitter bypass capacitor (C3) is used to bypass the RE and
short circuits the ac signal through C3 since voltage gain
decreases because of presence of RE
4

A.C. Equivalent Circuit is obtained by :

1. Setting all D.C. sources to 0 and replacing them by a short
circuit equivalent
2. Replacing all capacitors by a short circuit equivalent
3. Removing all elements bypassed by the short circuit equivalents
introduced in steps 1 and 2
4. Redrawing the network in a more convenient and logical form

VCC

C2

C1
B

RS
+

RC

R1

RC

R1

vo
R2

RE

C3
-

Basic BJT Amplifier

vo

R2

vS

vS
-

RS

A.C. Equivalent Circuit

6

C
B

RS
+
vS
-

R1

RC
vo

RS
+

R2

RC
vo

R1R2

vS

Simplify circuit by replacing R1 and R2 with RB

RB=R1|| R2

We now replace the transistor with its small signal equivalent circuit.
The details of this would be available from the manufacturers
specifications for the transistor.
7

Small Signal AC Equivalent

Model for an NPN Transistor
used in the Common Emitter
Configuration
(Reverse the current and diode
directions for PNP)

ic
ib

C
B

npn
E

ie
E

ic

C
ib

ic

ic = ib

C
ib

B
E

ie

B
E

Replace BE diode by its

equivalent resistance re

E
VT 26 mV
=
re =
IE
IE

ic = ib
re

ie

IE is the DC Emitter
Current

Small Signal AC Equivalent

Model for an NPN Transistor
used in the Common Emitter
Configuration

Add ro to represent the

output impedance of
the transistor

C
ib
B
E

ic = ib
re

ie

This is known as the re

Model for the Common
Emitter configuration

ro large (typically 40-50 K and

may be ignored in simplifed
analysis! (When can we ignore
it?)

+
C

Using the re small signal model (for AC signal analysis)

RS
+

vS

(Without Source and Load Resistances)

ib

(+1)re

vi R B

ib =

vi
( + 1)re

vo
= ib
ro || RC

Av =

ic
ib
ro RC

vo

Note the phase

reversal between
input and output

RC || ro
vo
=

+
vi
1

re

For ro>>RC and >>1 Av =

RC
re

vo

R1R2

RC

+
C

RS

(Without Source and Load Resistances)

b

ii

ib

ic

io

RC
vo

R1R2

vS
-

io
RB

=
A=

i
ii
RB + ( + 1) re

ro

r
R
+
C
o

(+1)re

Output Impedance
vi R B

ii

ro RC

Z O = RC || ro

vo

vi

[ RB || ( + 1)re ]

ib = ii

ib

RB
RB + ( + 1)re

ro
io = ib
ro + RC

Input Impedance

Current Gain

Z=
i

vi
= RB || ( + 1)re
ii

Basic BJT Amplifier (with source resistance RS and load

resistance RL)
VCC

RC

R1

ii

C
C1

+
B

RS
+

C2

iL
R2

RE

RL

vo

C3

vo
A =
vS
*
V

vS
-

Note that the circuit between the dotted lines is what we have analyzed before

VCC

Finding AV

Voltage Gain

RC

R1
C

C2

C1

+
B

RS
+

1. Use the same procedure as before except you

now have to add RS and RL to the circuit
Try this approach yourself!

E
RL

R2

RE

vS
-

2. Use the results we got for Av, Zi and Zo for the

earlier case. This approach is given below.

v Ai
Zi
vo
RL
= =
vs Z i + Rs
v Ao RL + Z o

ii

RS

Zo
vs

vAi

Zi

vo vo v Ao v Ai
A= =
vs v Ao v Ai vs
*
v

vAo
RL

vo

vo

C3

Zi
RL
=
Av
RL + Z o
Z i + Rs

Fixed Bias Transistor Amplifier

VCC

RC

RB
C

C2

C1
+
Rs

+
B

E
RL

vo

vi

vs
-

Fixed Bias Transistor Amplifier

VCC

RC

RB
C

Input port

C2

C1

output port

+
Rs

+
B

E
RL

vo

vi

vs
-

ii

ib

ic
C

io
+

RS
vi

RB

(+1)re

ib

RC

ro

RL

vo

vS
-

E
Zo

Zi

=
Z i RB || ( + 1)re
=
Z o RC || ro RC

if ro>>RC

Fixed Bias Transistor Amplifier

VCC

RC

RB
C

C2

C1

Rs

RL
+

vo

vi

vs
-

Input port

vS
RB
ib =

RS + RB || ( + 1)re RB + ( + 1)re

ii

output port

ib

io

vo = ib ( RC || ro || RL ) ib ( RC || RL )

ic

RS
vi

RB

(+1)re

ib

RC

ro

RL

vo

vS
-

Zi

vo
( RC || RL ) RB || ( + 1)re
=

vs
R
R
||
(

1)
r
(

1)
r
+
+
+
B
e
e
S

R || RL
C
for
RB || ( + 1)re >> RS
re

AV =

Zo

Emitter and Collector Feedback Bias

+ VCC

RC
RF

C2
+

C1

vo
-

+
vi
RE

CE

Emitter and Collector Feedback Bias

Voltage Gain Calculation

vi
ib =
( + 1)re
vi vo
vo
vi

=
ib =
+ 1 re
RF
ro || RC
We can of course solve this to
get the exact gain AV=vo/vi

ii

RF

C
+

+
ib

vi

ib

(+1) re

ro

RC

vo

Assuming >>1 and ro>>RC, we get

1
1 1
1
vo
+
= vi

R
R
r
R
C
F
F
e

Since typically, re<<RF

vo
RF || RC
RC
A=

v
vi
re
re

For
RF>>RC

Emitter and Collector Feedback Bias

Calculating the Input Impedance

=
ii

vi
v v
+ i o
( + 1)re
RF

1
RC
1
vi
+
+

r
R
R
r
F
F e
e

Input Impedance

RF

ii

C
+

+
ib

vi

ib

(+1) re

RC

vo

vi
re
1

Zi =
ii 1
RC 1 + RC
1
+
+
R
r
R
R
r
F
F
F e
e

ro

Emitter and Collector Feedback Bias

Calculating the Output Impedance
We do this as Zo=VOC/ISC

VOC= v=
AV vi
o
I SC

and then use the following circuit to get ISC

v
v
vi
= i ib = i
RF
RF + 1 re
v
i
re

Ignore ro

RF

ii

+
ib

vi

ib

(+1) re

RC

Using

Av =

RC || RF
re

Output Impedance
or

we get

Z o = RC || RF
Z o = RC || ro || RF

if we take ro into account

ISC

Amplifier with Un-bypassed Emitter Resistance

+ VCC

R1

RC
C2
+

C1

vo
-

+
vi
R2

RE

+ VCC

Amplifier with Un-bypassed Emitter Resistance

RC

R1

C2
+
vo

C1

ii

+
vi

ib

vi

(+1) re

RB=R1||R2

ib

R2

ro
RC

vo

RE
-

vi =
( + 1)ib re + ( + 1)ib RE

Voltage Gain

AV =

vo =
ib RC

Neglecting ro

RC
vo
RC
RC
=

+
1
vi
re + RE
RE

re + RE

Note that voltage gain reduces compared to the circuit where

the emitter resistance has been bypassed using a capacitor!

RE

+ VCC

Amplifier with Un-bypassed Emitter Resistance

RC

R1

C2
+
vo

C1

ii

+
vi

ib

vi

(+1) re

RB=R1||R2

ib

R2

ro
RC

vo

RE
-

Output Impedance

Z O = RC

vi = ( + 1)ib re + ( + 1)ib RE

Input Impedance

(neglecting ro)
vi
= ( + 1)(re + RE ) = Z BE
ib

(say)

Z
RB || Z BE
=
= RB || [ ( + 1)(re + Re ) ]
i
(higher than before)

RE

Emitter Follower Circuit

+ VCC

Bias (Q-Point)
RB=R1||R2
VBB=VCCR2/(R1+R2)

R1

VBB 0.7
IB =
RB + ( + 1) RE

RC

IC = I B
VCE = VCC ( + 1) I B RE

C1
+
vi

C2

+
R2

RE

vo
+

Simplified equivalent
circuit omitting ro

Emitter Follower Circuit

v=
( + 1)ib RE
0

ib

vi

(+1) re

=
( + 1)ib (re + RE )

RB=R1||R2

vi = ib ( + 1)re + ( + 1)ib RE

ii

ib

E
RE

Voltage Gain

A=
v

v0
RE
=
<1
vi re + RE

Input Impedance

VOC

v
Z i =i =RB || [ ( + 1)(re + RE ) ]
ii

RE
=
vo =
vi
re + RE

Zo
Output Impedance =

( + 1)ib , SC
I SC =
VOC
= re || RE re
I SC

ib , SC

vi
=
( + 1)re

+
vo
-

Why use the Emitter-Follower Configuration?

The Emitter Follower circuit does not provide any voltage gain
(Gain 1) but is useful for impedance matching purposes.
For example, as an interface between a high-output
impedance sensor and a low input impedance detection
circuit.
This is because it has a high input impedance and a low
output impedance recall that impedances should be matched
for maximum power transfer.

Darlington Connection
How can we get very large values of ?
C

overall=12+1+2
overall 12

Q1

Q2

Darlington Pair

Differential Amplifier
How to amplify differential signals? i.e. vo=Av(v1-v2)
+ VCC

RC1

RC2
vo1

vo2

Q1

v01-v02=Av(vi1-vi2)
Q2
vi2

vi1
RE

- VEE

+ 12V

Q-Point of Q1 and Q2

RC=50 K
RE=10 K
=50

IE1=IE2=0.5 IRE = 0.5[5-0.7]/10=0.215 mA

RC

RC
vo1

IB1=IB2=0.215/51=0.004216 mA
VC1=VC2=12 - 0.211(50)=1.461 V

vo2

VB1=VB2=0 V
Q1

Q2

VE1=VE2=-0.7V
vi2

vi1

VCE1=VCE2=1.461-(-0.7)=2.161 V

RE
I RE
- 5V

Note that VBC1=VBC2=-1.461 V implying that the B-C junction is reverse

biased.
Since the B-E junction is forward biased, the transistors are operating
in the active region.

+ 12V

re=26/0.215 = 121
RC

RC
vo1

=50
RC=50 K
RE=10 K

vo2

Q1

Q2
vi2

vi1
RE
I RE
- 5V

ib1

ib2
RE

51re

10 K

6.17K

51re

6.17K

vs1

vs2
ve
50ib2

50ib1
vo1
RC1

50 K

vo2
RC2

50 K

vs1 ve
vs 2 ve
=
ib 2
6.17
6.17
(v v )
(v v ) ve
v
51 s1 e + 51 s 2 e =
6.17
6.17
10
8.27(vs1 + vs 2 ) 16.53ve =
0.1ve
ib1

ib1

ib2
RE

51re

10 K
51re

6.17K

6.17K
vs2

s1

or 8.27(vs1 + vs 2 ) =
16.63ve
0.497(vs1 + vs 2 )

ve

ve
50ib2

50ib1
vo1
RC1

50 K

vo2
RC2

Therefore,
0.497(vs1 vs 2 ) 0.006
+ =
vs1 0.08055(vs1 vs 2 ) + 9.7 104 vs1
6.17
6.17
0.08055(vs1 vs 2 ) + 9.7 104 vs 2
ib 2 =

=
ib1
and

ib 2 ) 0.1611(vs1 vs 2 ) + 9.7 104 (vs1 =

(ib1 =
vs 2 ) 0.1621(vs1 vs 2 )

50ib1 RC1 =
2500ib1
vo1 =

50ib 2 RC 2 =
2500ib 2
vo 2 =

2500(ib1 ib 2 ) =
405.3(vs1 vs 2 )
vo1 vo 2 =
vo1 vo 2
= 405.3
Therefore, AV =
vs1 vs 2

50 K

Push-Pull Configuration
+VCC
R1

C1
Q1

Class B Power
Amplifier

vo

R3
vi
RL
Q2
C2

R2

-VCC

Matched npn and pnp transistors used to make amplifiers with high
efficiency. Typically used as Power Amplifiers.

Current Mirror Circuit

VCC1

VCC2

I=(VCC1-VBE)/R

Q1

RL

Imirror=I

Q2

Transistor as a Switch
VCC=+5 V

ICsat =6.1 mA

Vi
5V

RC

0V

Vi

0.82K

Vo=VC

t
VC

RB

5V

68 K

=125
0V

Transistor Inverter

IC-VCE Characteristics (=125)

Assume (a) IC=ICE0=0 mA when IB=0 A

(b) VCEsat=0 V This is more typically 0.1-0.3 V

VCC=+5 V
Vi
5V

RC

0.82K

Transistor as a Switch (Inverter)

0V

Vi

Vo=VC

t
RB
68 K

VC
5V

0V

(a) Vi=0 V

Transistor is OFF, IC=0 and Vo=VC=+5 V

(b) Vi=+5 V

Transistor is ON, VCEsat=0 V

IB=(5-0.7)/68=63 A
ICsat=VCC/RC=5/0.82=6.1 mA
Note that IB=7.88 ma > ICsat=6.1 mA
Therefore, the transistor is indeed in saturation

Problem Verifying if a transistor is in saturation

VCC

IC

R2

RC

VBB=5 V

IB
Q

R1

If VCC=+10 V, R1=R2=100 K, RC=10 K

, RE=5 K , can the transistor Q be in
saturation? Assume VCE, Sat=0.1 V, =50

IE

RE

RB=50 K

5 = 50IB+0.7+5(IB+IC)

55IB+5IC=4.3

10=10IC+0.1+5(IC+IB)

5IB+15IC=9.9

Solving these, we get

IC=0.66 mA

IB= 0.019 mA

IC=0.66< IB=0.95, therefore transistor is indeed in saturation

If we assume transistor in active region, then we get IB=0.0143 mA, IC=0.717
mA, IE=0.731 mA. This gives VE=3.66 V, VB=4.36 V and VC=2.83 V. Since B-C
junction is forward biased, transistor CANNOT BE IN ACTIVE REGION.

Relationship between Av, Ai, Zi and Zo

ii

vAi

iO

Zo

Zi
vAo

=
AV

v Ao
v Ai
=
Zi
v Ai
ii

v Ao
AV v Ai
AV Z i ii
=
iO = =
Z o + RL Z o + RL Z o + RL

RL

vo

iO
AV Z i
Ai = =
ii Z o + RL

Problem 1, Tutorial 5
VCC=10 V

RC
R1

40 K

2.8 K

Because of the +Vcc power supply, the

transistor cannot be in cutoff!
Assuming transistor in active region -

=
IB

VTh 0.7
4.3
=
= 0.0305 mA
RTh + ( + 1) RE 20 + 101*1.2

IC =
IB =
3.05 mA VC =
10 2.8 I C =
1.46 V
VE =
I E RE =
( + 1) I B RE =
3.7 V
VB =VE + 0.7 =4.4 V
R2

40 K

RE

1.2 K

+2.94 V
VBC =
VB VC =
Gives forward-biased B-C junction which is
not possible if transistor in active region.
Assumption of transistor in active region is
NOT RIGHT!

Problem 1, Tutorial 5
VCC=10 V

RC
R1

Assuming transistor in saturation

(VCE, Sat 0.1 V or VBC, Sat0.6 V)

2.8 K

40 K

5= I B RB + 0.7 + ( I B + I C ) RE

21.2 I B + 1.2 I C = 4.3

10= I C RC + 0.1 + ( I B + I C ) RE

1.2 I B + 4 I C= 9.9

IB=0.064 mA, IC=2.456 mA, IE=2.52 mA

R2

40 K

RE

1.2 K

VE=3.02 V, VB=3.72 V, VC=3.12 V

Note that IC<IB, so transistor is indeed in saturation! CONFIRMED

Problem 1, Tutorial 5 (Alternate Approach)

Assuming transistor in saturation
(VCE, Sat 0.1 V or VBC, Sat0.6 V)

VCC=10 V

RC
R1

2.8 K

40 K

IC I E

VCC VCE , Sat

RC + RE

9.9
= 2.475 mA
4

ignoring I B which would be small

VE I=
1.2 * 2.475
=
= 2.97 V
E RE
VC =+
VE VCE , Sat =
3.07 V
VB =
VE + 0.7V =
3.67 V
R2

40 K

RE

1.2 K

IB
=

VTh VB 5 3.67
= = 0.0665 mA
RTh
20

Note that IC<IB, so transistor is indeed in saturation! CONFIRMED