Dsa 529802

MICROWAVE SILICON COMPONENTS
Contents

CONTENTS
CONTENTS
w
e
N
f
o
t
i
y
Spir nolog
Tech
PAGE
INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2
All specifications contained in that catalog are subject to change without notice.
SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4

SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28
TUNING VARACTORS DIODES
...............................................
12-31
POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40

CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47
MOS CAPACITORS: Please consult page 7-39 of this catalog
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
12-1
Vol. 1

Introduction
INTRODUCTION
This part of the Microwave section presents TEMEX product lines including:
receiving diodes
control diodes
tuning varactors
multiplier varactors
step recovery diodes
high voltage PIN diodes
TEMEX products are available in a complete assortment of packages including:
chips
standard
surface mount ceramic and plastic
non magnetic
custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin wafer,
TEMEX performs all functions, including:
epitaxy
diffusion
photomasking
metallization
passivation
dicing
packaging
control and burn-in
TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all
junction passivations, and all mesa operations.
12-2
Vol. 1


Symbols
SYMBOLS
Cb
....................................
Case Capacitance
Cj
....................................
Junction Capacitance
CT
....................................
Total Capacitance
CX/Cy
....................................
Tuning Ratio
....................................
Test Frequency
FCO
....................................
Cut-off Frequency
FI
....................................
Frequency Input
FIF
....................................
Intermediate Frequency
FO
....................................
Output Frequency
Foper
....................................
Operating frequency
IF
....................................
Forward Continuous Current
IR
....................................
Reverse Continuous Current
IRP
....................................
Reverse Pulse Current
....................................
Conversion Loss
N/A
....................................
Not Applicable
NFSSB
....................................
Single Sideband Noise Figure
NFIF
....................................
Noise Figure of Intermediate Frequency
....................................
Gold Contact Diameter
PCW
....................................
CW Power Capability
Pdiss
....................................
Power Dissipation
Pin
....................................
Power Input
PL
....................................
Limiting Threshold
PLO
....................................
Local Oscillator Power
PO
....................................
Output Power
PRF
....................................
RF Power
Q-X
....................................
Figure of Merit
RSF
....................................
Forward Series Resistance
Rth
....................................
Thermal Resistance
RV
....................................
Video Resistance
....................................
Minority Carrier Lifetime
TCR
....................................
Reverse Switching Time
Tj
....................................
Junction Temperature
tSO
....................................
Snap-off Time
TSS
....................................
Tangential Sensitivity
VBR
....................................
Breakdown Voltage
VF
....................................
Forward Continuous Voltage
VR
....................................
Applicable Voltage (RF + bias)
VSWR
....................................
Voltage Standing Wave Ratio
VT
....................................
Forward Threshold Voltage
VTO
....................................
Threshold Voltage
ZIF
....................................
Impedance at Intermediate Frequency
ZO
....................................
Output Impedance

12-3
Vol. 1
SILICON PIN DIODES

Selection guide
SILICON PIN DIODES

Selection Guide
PAGE
HOW TO SPECIFY A PIN DIODE?
12-5
SURFACE MOUNT PACKAGE

- PLASTIC PACKAGE SWITCHING SILICON PIN DIODES
12-6
- PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES
12-8
- LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
12-10
- SQUARE CERAMIC PIN DIODES
12-12
- NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES
12-15
HIGH VOLTAGE PIN DIODES

- SWITCHING & PHASE SHIFTING APPLICATIONS
12-18
- TWO AND THREE PORTS RF PIN SWITCH MODULES
12-20
MICROWAVE APPLICATIONS
12-4
Vol. 1
12-17
12-22
- ULTRAFAST SWITCHING SILICON PIN DIODES
12-23
- FAST SWITCHING SILICON PIN DIODES
12-24
- ATTENUATOR SILICON PIN DIODES
12-25
- SILICON LIMITER PIN DIODES
12-26

SILICON PIN DIODES

How to specify a PIN diode
HOW TO SPECIFY A PIN DIODE ?
To obtain the PIN diodes best suited for a specific application, consider the following:
1.
2.
3.
Application
switch
attenuator
limiter
8. Maximum loss expected

9. Minimum isolation needed
10. VSWR and distortion requirements
Frequency and bandwidth requirements
11. Power applied to the diode
forward biased
Power characteristics
reverse biased
peak
during switching
average
pulse duration and duty cycle
4.
Switching time
5.
Bias conditions
forward
reverse
12.Static characteristics
applicable voltage: VR
total capacitance: CT
(in space charge)
6.
Circuit impedance
7.
Shunt or series assembly
forward series resistance: RSF
carrier lifetime l
thermal resistance: Rth
13. Mechanical and packaging constraints

12-5
Vol. 1
SILICON PIN DIODES

Plastic package Surface Mount switching silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT SWITCHING

SILICON PIN DIODES
Description
TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
Applications
The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF)
and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching
time and low switching current.
TEMEX diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak
power, RF and microwave applications (up to 3 GHz).
Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems)
and filter switches, phase shifters ....
Note: To reduce the distortion, it is necessary to verify and design with the following formula:
HF
l IDC F
12-6
Vol. 1
HF :
RF peak current (A)
l :
Diode minority carrier lifetime (s)
IDC :
DC bias current (A)
F :
Application frequency (Hz)
<< 1

SILICON PIN DIODES

Plastic package Surface Mount switching silicon PIN diodes
Characteristics @ Ta = +25 C
PACKAGED DIODES
Breakdown
voltage (VBR (1))
Total
capacitance (CT (2))
Series
resistance (RSF)
Minority carrier
lifetime (I)
F = 1 MHz
IF = 10 mA
IF = 10 mA
VR = 50 V
pF
max
F = 120 MHz
max
IR = 6 mA
ns
typ.
IR = 10 A
Test conditions
Type
V
min.
DH50051
DH50058
DH50053
DH50103
DH50109
DH50203
DH50209
DH80051
35
35
50
100
100
200
200
400
0.3 (3)
1 (3)
0.35 (4)
0.35
1.2
0.35
1.2
0.6
2.5
0.5
1.5
3
0.6
3
0.6
2
(5)
150
200
200
500
1000
500
1000
2000
(1) : Other breakdown values on request
(4)
: VR = 20 V at F = 1 MHz
(2) : Other capacitance values on request
(5)
: RSF at IF = 5 mA
(3) : VR = 5 V at F = 1 MHz
Temperature ranges:
Operating junction (Tj) :
-55 C to +125 C
Storage :
-55 C to +150 C
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
DH50051-60
DH50058-60
DH50053-60
DH50103-60
DH50109-60
DH50203-60
DH50209-60
DH80051-60
DH50051-51
DH50058-51
DH50053-51
DH50103-51
DH50109-51
DH50203-51
DH50209-51
DH80051-51
DH50051-53
DH50058-53
DH50053-53
DH50103-53
DH50109-53
DH50203-53
DH50209-53
DH80051-53
DH50051-54
DH50058-54
DH50053-54
DH50103-54
DH50109-54
DH50203-54
DH50209-54
DH80051-54
DH50051-70
DH50058-70
DH50053-70
DH50103-70
DH50109-70
DH50103-70
DH50209-70
DH80051-70
Packages
DH50051
DH50058
DH50053
DH50103
DH50109
DH50203
DH50209
DH80051
(1) Other configuration available on request.
How to order?
DH50051
Diode type
51
T3
Package
information
Conditioning
51: single SOT23

53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3: 3000 pieces

tape & reel
T10: 10000 pieces
tape & reel
blank: bulk

12-7
Vol. 1
SILICON PIN DIODES

Plastic package Surface Mount attenuating silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT ATTENUATING

SILICON PIN DIODES
Description
TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
Applications
Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits,
from MHz to several GHz.
The attenuating Pin diode uses properties of variation of forward series resistance versus the DC
forward bias current. In order to obtain the best dynamic range, a single diode attenuator may be used
in series or shunt configuration or designed as a multiple diode circuit (T or p circuit), where the device
may be matched through the attenuation range.
Note: To reduce the distortion, it is necessary to verify and design with the following formula:
HF
l IDC F << 1
HF :
RF peak current (A)
l :
Diode minority carrier lifetime (s)
IDC :
DC bias current (A)
Application frequency (Hz)
Typical performance curve
RSF ()
1000
Typical series resistance versus forward current
100
DH40144
DH40225
DH40141
10
1
0.1
12-8
Vol. 1

IF (mA)
10
SILICON PIN DIODES

Plastic package Surface Mount attenuating silicon PIN diodes
Electrical characteristics at 25 C
Electrical
Parameters
I Zone
thickness
Test conditions
Type
DH40141
DH40144
DH40225
Forward series
resistance Rsf ()
(1)
Junction
capacitance
Reverse
current
Carrier
lifetime
Cj (2)
IR
F = 1 MHz
VR = 100 V
I
IF = 10 mA
F = 120 MHz
IF = 0.1 mA
typ.
140
140
220
min.
400
200
400
IF = 1 mA
IF = 10 mA
max min. max min.

800
50
100
6.5
400
25
50
3.5
800
50
100
6.5
max
13
7
13
pF
typ.
0.05
0.10
0.10
max
0.10
0.30
0.30
IR = 6 mA
max
10
10
10
typ.
2.5
5.0
7.0
(1) Other I zone thicknesses on request

(2) Other capacitance values on request (measured at 50 V)
Temperature ranges:
Storage
:
- 55 C to + 125 C
- 65 C to + 150 C
Packages
SOD323
SOT23
SOT143
DH40141-60
DH40144-60
DH40225-60
DH40141-51
DH40144-51
DH40225-51
DH40141-70
DH40144-70
DH40225-70
Packages
DH40141
DH40144
DH40225

How to order?
DH40141
Diode type
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
87: SOT323
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk

12-9
Vol. 1
SILICON PIN DIODES

Low cost square ceramic package PIN diodes
LOW COST SQUARE CERAMIC PACKAGE PIN DIODES

Features
Description
Low loss, low distortion
Low inductance
High reliability
Hermetically sealed package
Non rolling MELF design
Pick and place compatibility
TEMEX is manufacturing a square PIN diode

for surface mount applications. The chip inside
is passivated to ensure high reliability and very
low leakage current. These diodes ensure high
power switching at frequencies from HF to few
GHz. This package utilizes ceramic package
technology with low inductance and leadless
faced package. The design simplifies automatic
pick and place indexing and assembly.
The termination contacts are tin plated for
vapor or reflow circuit board soldering. The
active area is a PIN glass passivated chip, which
can be designed to customer specifications.
Pinning
Outline drawing
SOLDERABLE
SURFACES
CERAMIC
C
B
Package
FULL FACE BOND
CHIP
SMD4
SMD6
SMD8
12-10
Vol. 1
Symbol
A
B
C
A
B
C
A
B
C
Millimeters
min. max
2
2.3
2.9
3.5
0.3
0.8
2.5
2.8
4.7
5.2
0.3
0.8
3.50 3.81
4.70 5.2
0.20 0.38

Inches
min. max
.079 .091
.114 .138
.012 .031
.098 .0110
.185 .205
.012 .031
.138 .150
.185 .205
.008 .015
SILICON PIN DIODES

Low cost square ceramic package PIN diodes
Applications
TEMEX square ceramic diodes are particularly suitable for high volume tape and reel assembly.
Several values of total capacitance are available, together with a low forward series resistance. These
components are designed to meet the low distortion specification required by all the mobile radio
applications. Due to the specific design, these devices offer low loss and low thermal resistance
performance and are characterized for high power handling. The electrical properties are ideal for use
in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz to GHz
frequencies.
Electrical characteristics at 25 C
Electrical
Parameter
Applicable
voltage
V
Package
Test conditions
w!
Ne
IR < 10 A
Type
Type
SQM1050
SQM1150
SQM1250
SQM1350
SQM1450
SQM2050
SQM2150
SMD4 (2)
SMD4
SMD4
SMD4 (2)
SMD8
SMD4
SMD4
(1)
(2)
V
max
50
200
50
50
50
50
50
Total
capacitance
CT
Forward
series resistance
RSF
f = 1 MHz
f = 120 MHz
Minority
carrier
lifetime
I
IF = 10 mA
VR = 50 V
pF
typ.
max
0.6
0.7
1.0
1.2
0.9
1.2
1.5
1.7
1.8
2.5
0.6
0.7
1.0
1.2
IF = 50 mA
typ.
max
0.70
0.90
0.25
0.35
0.50
0.75
0.40
0.60
0.50
0.75
0.7
1.00
0.25
0.35
IR = 6 mA
s
min.
1.0
1.0
2.0
3.5
5.0
1.0
1.0
Power
dissipation
Contact
surface (1)
W
max
3.0
3.0
4.0
4.5
8.0
3
3
diode brazed on infinite copper heat sink at 25 C

standard package SMD4 also available in SMD6
Temperature ranges:
Operating junction (Tj)
Storage
Soldering
-55 C to +150 C
:
:
-65 C to +150 C
230 C 5 Sec.

12-11
Vol. 1
SILICON PIN DIODES

Square ceramic surface mountable PIN diodes
SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES

Description
These PIN diodes are manufactured in a square package (SMD) for surface mount applications.
These packages utilize ceramic package technology with low inductance and axial terminations.
This design simplifies automatic pick and place indexing and assembly. The termination contacts are
tin lead plated for vapor or reflow circuit board soldering on Printed Circuit Boards.
These diodes are particularly suited for applications in frequency hopping radios, low loss,
low distortion, and filters in HF, VHF and UHF frequencies.
Packages
Packages
SMD4
SMD4AM
DH50209
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
DH80082
DH80100
DH80102
DH80106
-06
-06
-06
-06
-06
-06
-06
-06
-06
-40
-40
-40
-40
-40
-40
-40
-40
-40
SMD6
-20
-20
-20
-20
SMD8
SMD8AM
-24
-24
-44
-44
Other specifications available on request.
How to order?
DH80053
Diode type
12-12
Vol. 1
06
Package
information
-06: SMD4
-40: SMD4AM
SMD8AM
-20: SDM6
-24: SMD8
T3
Conditioning
T1: 1000 pieces
tape & reel
T3: 3000 pieces
tape & reel
blank: bulk

SILICON PIN DIODES

Electrical characteristics
Low voltage PIN diodes
Test
conditions
Type
DH50209
Breakdown
Vbr
Total
capacitance
Forward
series resistance
Minority
carrier
(V)
Ct (pF)
Rsf ()
t l (s)
min.
Vr = 50 V
f = 1 MHz
typ.
max.
If = 50 mA
f = 120 MHz
max.
If = 10 mA
Ir = 6 mA
min.
200
1.00
0.25
2.00
Ir = 10 A
1.20
Medium voltage PIN diodes
Test
conditions
Type
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
Applicable Breakdown Total capacitance

Forward series
Minority
Max. power
voltage V
Vbr
Ct
resistance Rsf
carrier
dissipation
(V)
(V)
(pF)
()
l (s)
25 C
I < 10 A
Ir = 10 A
Vr = 50 V
I= 100mA I= 200 mA If= 10mA Contact Free
f = 1MHz
f= 120MHz f= 120 MHz Ir= 6mA surface
air
max.
typ.
typ.
max.
max.
min.
W (1) W (2)
500
550
0.40
0.45
0.70
0.65
1.1
3.0
1.2
500
550
0.55
0.65
0.60
0.55
1.5
3.5
1.2
500
550
0.85
1.05
0.40
0.35
2.0
4.0
1.2
500
550
1.05
1.20
0.35
0.30
2.5
4.0
1.5
500
550
1.25
1.35
0.30
0.27
3.0
4.5
1.5
500
550
1.45
1.55
0.28
0.25
3.5
4.5
1.5
(1) Diode brazed on infinite copper heat sink

(2) Diode brazed on Epoxy circuit (PCB)

12-13
Vol. 1
SILICON PIN DIODES

Medium voltage PIN diodes
Test
conditions
Type
DH80082
DH80100
DH80102
DH80106
Applicable Breakdown Total capacitance

Forward series
voltage V
Vbr
Ct
resistance Rsf
(V)
(V)
(pF)
()
Vr = 50 V
I=100mA I=200 mA
I < 10 A
Ir = 10 A
f = 1MHz
f=120MHz f=120 MHz
max.
typ.
typ.
max.
max.
800
850
0.90
1.00
0.40
0.35
1000
1100
0.55
0.65
0.70
0.60
1000
1100
0.85
1.00
0.50
0.35
1000
1100
1.25
2.00
0.35
0.30
Minority
Max. power
carrier
dissipation
l (s)
25 C
If=10mA Contact Free
Ir=6mA surface
air
min.
W (1) W (2)
3.00
TBD
TBD
3.00
TBD
TBD
4.00
TBD
TBD
7.00
TBD
TBD
(1) Diode brazed on infinite copper heat sink

(2) Diode brazed on Epoxy circuit (PCB)
Temperature ranges
Storage
-55 C to +150 C
-65 C to +150 C
Series Resistance vs. Forward Current
100
RSF ()
DH80052
DH80050
10
0
0.1
100
10
I (mA)
1000
100
RSF ()
10
DH80053
DH80051
0
0.1
12-14
Vol. 1
10
100
I (mA)
1000

SILICON PIN DIODES

Non magnetic square ceramic package 500 volts PIN diodes
NON MAGNETIC SQUARE CERAMIC PACKAGE

500 VOLTS PIN DIODES
Features
Description
Non magnetic package
Low loss, low distortion
Low inductance
High reliability
Hermetically sealed package
Glass passivated PIN diode chip
Non rolling MELF design
Pick and place compatibility
TEMEX is manufacturing a non magnetic

square PIN diode for surface mount applications. The properties of non magnetism
prevent interference in the magnetic field of the
imaging system. The chip inside is passivated to
ensure high reliability and very low leakage.
These diodes ensure high power switching at
frequencies from 1 MHz to several GHz. This
package utilizes ceramic package technology
with low inductance and axial terminations. The
design simplifies automatic pick and place
indexing and assembly. The termination
contacts are tin plated for vapor or reflow circuit
board soldering. The active area is a PIN high
power glass passivated chip which can be
designed to customer specifications.
Pinning
Outline drawing
2
(.0 .00 +0
80 + -0 .3
.0
-0 12
)
SOLDERABLE
SURFACES
+0.3
-0
+.012
-0
2.00
(.080 )
CERAMIC
+0.3
-0.3
3.20
(.126 )
0.635 max
(.025 max)
+.012
-.012
FULL FACE BOND
CHIP

12-15
Vol. 1
SILICON PIN DIODES

Non magnetic square ceramic package 500 volts PIN diodes
Applications
Maximum ratings
TEMEX non magnetic SQP diodes are

particularly suitable for Magnetic Resonance
Imaging applications. The maximum operating
breakdown voltage is 550 V. Several values of
total capacitance are available (beginning at
0.40 pF), together with a low forward series
resistance.
These devices are characterized for high power
handling, low loss and low distortion (long
carrier lifetime design). The electrical properties
are ideal for use in RF coils which must produce
a homogeneous electromagnetic field in the
MRI system for frequencies from a few MHz to
over 100 MHz.
OPERATING
JUNCTION
STORAGE
SOLDERING
- 55 C
- 65 C
230 C 5 sec.
+ 150 C
+ 150 C
STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS
PACKAGED DIODES
Characteristics
at 25 C
Applicable Breakdown
voltage
voltage
V
CT
RSF
f = 1 MHz
f = 120 MHz
IF = 10 mA
VR = 50 V
IF as below
IR = 6 mA
pF
max
conditions
IR < 10 A
TYPE
max
typ.
typ.
max
500
500
500
500
500
500
550
550
550
550
550
550
0.40
0.55
0.85
1.05
1.25
1.45
0.45
0.65
1.05
1.20
1.35
1.55
DH80050-40
DH80051-40
DH80052-40
DH80053-40
DH80054-40
DH80055-40
(1)
Forward series
resistance
VBR
Test
Ir < 10 A
Minority
carrier
lifetime
Total
capacitance
Contact
surface
IF=100mA
IF=200mA
min.
max
0.70
0.60
0.40
0.35
0.30
0.25
0.65
0.55
0.35
0.30
0.27
0.22
1.1
1.5
2.0
2.5
3.0
3.5
3.0
3.5
4.0
4.0
4.5
4.5
diode brazed on infinite copper heat sink
12-16
Vol. 1
Power
dissipation

(1)
SILICON PIN DIODES

High voltage PIN diodes
HIGH VOLTAGE PIN DIODES
Applications
Characteristics
These devices are most often used to control

Radio Frequency (RF) and microwave signals.
Typically, high-voltage PIN diodes are found in
high power switches and phase shifters.
The controlling element of a PIN diode is its

Intrinsic (l) layer. The diode itself is a sandwich,
i.e. a high resistivity l layer between highly
doped layers of P and N materials. With
negative bias on the l layer, the PIN diode
exhibits very high parallel resistance, e.g. acting
as a switch in the OFF position. A positive bias
causes the diode to conduct, with very low
series resistance. Certain applications impose
specific objectives on diode construction (e.g.
in the HF and VHF band, low signal distortion
can be achieved with high Minority Carrier
Lifetime l).
TEMEX high-voltage PIN diode products are

designed for very high reliability, high power
handling capabilities, high isolation, and low
signal distortion, especially in the HF and VHF
bands. High-power multithrow switch modules
are available for frequencies in the 1 MHz to
1 GHz range.
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface
mount (SMD) and (on request) non-magnetic.

12-17
Vol. 1
SILICON PIN DIODES

SILICON PIN DIODES FOR SWITCHING & PHASE

SHIFTING APPLICATIONS (MEDIUM & HIGH POWER)
Description
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
CHIP DIODES
Characteristics
at 25C
Chip
dimensions
Test conditions
TYPE
PIN
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
Breakvoltage down
VR
VBR
Applicable
N/A
I < 10A I < 10A
mm typ.
Gold dia per side
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4
CHIP AND PACKAGED DIODES

Junction
Forward series
Minority
capacitance
resistance
carrier
Cj (1)
RSF
lifetime
VR = 50 V
f = 120 MHz
IF = 10 mA
f = 1 MHz
IF
IR = 6mA
V
min.
V
typ.
typ.
max
IF = 100 mA
500
500
500
500
500
800
800
800
1000
1000
1000
550
550
550
550
550
850
850
850
1100
1100
1100
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.30
0.60
1.40
0.20
0.40
0.70
0.90
1.3
0.35
0.90
1.7
0.40
0.75
1.70
pF
VR = 100V
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1.5 H (2)
1.7 H (2)
2.2
1.5
2.2
1200
1200
1200
1200
1500
1500
1300
1300
1300
1300
1600
1600
0.30
1.00
1.40
2.00
1.00
2.00
0.40
1.20
1.70
2.30
1.20
2.30
VR = 200V
EH80182
EH80189
EH80204
EH80209
EH80210
(1)
(2)
12-18
Vol. 1
0.75
1.4
0.85
1.4
1.5
1.5
2.6 H (2)
1.7
2.6 H (2)
3 H (2)
AS SHOWN
1800
1800
2000
2000
2000
1900
1900
2100
2100
2100
0.60
2.00
1.00
2.00
3.00
0.80
2.40
1.30
2.40
3.40
IF = 200 mA
S
min.
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
IF = 200 mA
IF = 300 mA
0.60
0.45
0.40
0.30
0.45
0.30
0.55
0.35
0.30
0.25
0.35
0.25
IF = 200 mA
IF = 300 mA
0.60
0.35
0.50
0.35
0.20
0.50
0.30
0.40
0.30
0.15
Other capacitance values available on request

Hexagonal chips (between opposite flats)

MAX
6.0
10.0
12.0
15.0
10.0
15.0
12.0
18.0
14.0
18.0
25.0
SILICON PIN DIODES

PACKAGED DIODES
Type
Thermal
resistance
RTH (4)
Standard case (3)
Typical operating
conditions
VSWR < 1.5
Z0 = 50
PDISS = 1 W
Chip configuration
C/W
PIN
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106
Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35
Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300
Flat mounted
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
15.0
12.0
5.5
DH80120
DH80124
DH80126
DH80129
DH80154
DH80159
F 27d
BH35
BH35
BH141
BH141
BH141
BH301
BH300
BH300
BH300
BH300
BH300
BH202
BH200
BH200
BH200
BH200
BH200
DH80182
DH80189
DH80204
DH80209
DH80210
BH35
BH141
BH141
BH141
BH141
BH300
BH300
BH300
BH300
BH300
BH200
BH200
BH200
BH200
BH200
Frequency
Power
50
30
20
20
10
50
20
10
20
20
10
MHz
- 20000
- 15000
- 10000
3000
1000
- 20000
- 10000
500
- 10000
- 3000
500
W
50
80
100
100
250
60
80
200
80
100
500
15.0
8.0
6.0
4.5
8.0
4.5
10
10
10
5
10
5
8000
2000
500
200
2000
200
100
250
500
1000
250
1000
10
4.5
8.0
4.5
2.5
10
15
10
1.5
1.5
50
200
1000
200
50
1000
250
1000
1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges:
Operating junction (Tj): -55 C to +175 C

Storage: -65 C to +200 C

12-19
Vol. 1
SILICON PIN DIODES

TWO & THREE PORT RF PIN SWITCH MODULES
Description
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
Loss
Isolation
Input power
Pin
N/A
f (MHz)
If (mA)
f (MHz)
Vr (V)
CW
Forward
Reverse
Switch
Type
MHz
dB
dB
mA
(2)
typ.
max
min.
max
typ.
typ.
10
10
100
100
50
50
100
100
100
100
200
200
200
200
150
150
150
150
1000
400
600
1000
1000
1000
1000
700
700
Characteristics
at 25C
Frequency
range
Test conditions
Type
Case
(1)
SH90101
SH91101
TO39
TO39
SP2T
SP2T
10 - 600
10 - 600
SH90103
SH91103
SH92103
SH93103
BH203
BH203
BH204
BH204
SP2T
SP2T
SP3T
SP3T
20
20
20
20
SH91107
BH403a
SP2T
20 - 500
SH90207
SH91207
BH405
BH405
SP2T
SP2T
1.5 - 50
1.5 - 50
1000
1000
1000
1000
(1) Series 90 and 92 : common anode

Series 91 and 93 : common cathode
200 MHz 100 MHz

100 mA
0V
0.35
35
0.35
35
400 MHz 200 MHz
100 mA
0V
0.35
25
0.35
25
0.35
25
0.35
25
100 MHz 200 MHz
200 mA
100 V
0.20
33
10 MHz 10 MHz
200 mA
200 V
0.15
37
0.15
37
(2)
Custom configurations available on request
Temperature ranges:
Storage
:
12-20
Vol. 1
Suggested bias
conditions
- 55 C to + 150 C
- 65 C to + 175 C

SILICON PIN DIODES

Internal wiring diagrams
Typical performances
INSERTION
LOSS AND ISOLATION
VERSUS FREQUENCY
common
anode
common
cathode
Isolation
(dB)
Insertion
loss (dB)
0.9
46
0.8
44
42
0.7
Isolation
0.6
BOTTOM
VIEW
SH91101
SH90101
38
0.4
36
0.3
34
0.2
32
Insertion
loss
0.1
0
10
30
28
20 30 50 70 100
200
SH91103
400 600
Isolation
(dB)
Insertion
loss (dB)
SH90103
40
0.5
0.8
52
0.7
48
0.6
44
0.5
40
Isolation
0.4
36
32
0.3
28
0.2
24
Insertion
loss
0.1
0
20
SH92103
30
20
Isolation
(dB)
Insertion
loss (dB)
52
0.7
48
0.6
44
0.5
40
Isolation
0.4
36
0.3
32
Insertion
loss
0.2
SH91107
28
24
0.1
0
20
30
50 70 100
bias bias
bias
200 300
20
500
0.8
54
0.7
51
0.6
48
0.5
45
Isolation
0.4
42
0.3
SH91207
f
(MHz)
Isolation
(dB)
Insertion
loss (dB)
SH90207
50 70 100 200 400 700 1000 (MHz)
SH93103
0.8
bias
f
(MHz)
38
Insertion
loss
0.2
36
33
0.1
30
0
1

3 5
7 10
20
30
50
f
(MHz)
12-21
Vol. 1
SILICON PIN DIODES

Microwave applications
MICROWAVE APPLICATIONS
Low and medium voltage PIN diode applications
The most common uses of these devices are: fast switching, attenuation and limiting. They operate at
frequencies from a few MHz to 100 GHz.
In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels
below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 m, and passivated mesa technology in chip
configurations, yield very low junction capacitance (Cj), i.e. below 0.025 pF.
As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with
a proprietary technology. This technology optimizes the relationship between Cj and RSF (Forward
Series Resistance), offering a high Minority Carrier Lifetime l, which minimizes signal distortion.
In limiting applications, e.g. passive protection for receivers, these PIN diodes operate as power
dependent variable resistors.
12-22
Vol. 1

SILICON PIN DIODES

ULTRAFAST SWITCHING SILICON PIN DIODES

Description
For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 m).
CHIP DIODES
Characteristics Gold Breakdown Junction

at 25C
dia voltage capacitance
Test
VBR
IR = 10 A
conditions
PACKAGED DIODES
Series
Minority Reverse
resistance carrier switching
lifetime
time
RSF
Thermal
resistance
Cj
VR = 6 V
IF = 10 mA IF = 10 MA IF = 20 mA
Rth
Pdiss
f = 1 MHz
f = 120 MHz IR = 6 mA VR = 10 V
1W
TCR
50
Type
Case
typ.
min.
pF
typ.
max
ns
ns
max
typ.
typ.
F 27 d
Type
C2a (1)
EH50033
EH50034
EH50035
EH50036
EH50037
EH50052
EH50053
EH50054
EH50055
EH50056
EH50057
EH50071
EH50072
EH50073
EH50074
EH50075
EH50076
EH50077
EH50101
EH50102
EH50103
EH50104
EH50105
EH50106
EH50107
(1)
(2)
25
30
35
55
65
30
35
40
50
65
80
35
40
45
50
60
80
100
45
50
60
70
90
110
130
30
30
30
30
30
50
50
50
50
50
50
70
70
70
70
70
70
70
100
100
100
100
100
100
100
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
1.8
1.5
1.0
0.9
0.7
1.6
1.4
1.1
1.0
0.9
0.7
2.0
1.7
1.6
1.4
1.0
0.9
0.7
1.9
1.7
1.4
1.2
1.0
0.8
0.6
Custom cases available on request

C T = Cj + C b
20
20
25
30
40
30
30
35
40
50
60
50
50
60
60
100
100
150
150
150
200
250
300
400
500
2.0
2.0
2.5
3.0
4.0
3.0
3.0
4.0
4.0
5.0
6.0
5.0
5.0
6.0
6.0
10.0
10.0
15.0
15.0
15.0
20.0
25.0
30.0
40.0
50.0
DH50033
DH50034
DH50035
DH50036
DH50037
DH50052
DH50053
DH50054
DH50055
DH50056
DH50057
DH50071
DH50072
DH50073
DH50074
DH50075
DH50076
DH50077
DH50101
DH50102
DH50103
DH50104
DH50105
DH50106
DH50107
Standard cases (1)

Cb =
0.18 pF
Cb =
0.12 pF
(2)
(2)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
C/W
max
80
80
70
60
50
80
70
60
50
45
45
70
70
60
50
45
40
40
60
60
55
50
40
35
35
Temperature ranges:
Operating Junction (Tj) : -55 C to +175 C
Storage

: -65 C to +200 C
12-23
Vol. 1
SILICON PIN DIODES

FAST SWITCHING SILICON PIN DIODES

Description
For fast switching, these passivated mesa diodes have a medium I layer (< 50 m).
CHIP DIODES
L CHIP
E AND
C PACKAGED
T R IDIODES
C A
Characteristics Gold Breakdown Junction

at 25C
dia voltage capacitance
Test
VBR
IR = 10 A
conditions
PACKAGED DIODES
Series
Minority Reverse
resistance carrier switching
lifetime
time
RSF
Cj
VR = 50 V
IF = 10 mA IF = 10 MA IF = 20 mA
f = 1 MHz
f = 120 MHz IR = 6 mA VR = 10 V
Thermal
resistance
Rth
TCR
Pdiss
1W
50
Type
Case
typ.
min.
pF
typ.
max
ns
ns
max
typ.
typ.
F27 d
Type
C2a (1)
EH50151
EH50152
EH50153
EH50154
EH50155
EH50156
EH50157
EH50201
EH50202
EH50203
EH50204
EH50205
EH50206
EH50207
EH50251
EH50252
EH50253
EH50254
EH50255
EH50256
EH50401
EH50402
EH50403
EH50404
EH50405
55
60
70
90
110
130
150
60
65
75
100
120
150
170
65
75
100
130
160
180
80
90
120
150
200
150
150
150
150
150
150
150
200
200
200
200
200
200
200
250
250
250
250
250
250
400
400
400
400
400
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.04
0.06
0.08
0.12
0.17
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
2.0
1.7
1.5
1.4
1.0
0.8
0.6
2.3
2.1
1.5
1.3
1.0
0.8
0.7
2.4
2.2
2.0
1.4
0.9
0.8
2.5
2.3
2.1
1.8
1.6
200
230
300
500
550
800
950
300
400
500
650
800
950
1050
330
500
900
900
1000
1150
700
800
1000
1500
2000
20
23
30
50
55
80
95
30
40
50
65
80
95
100
33
50
90
90
100
110
70
80
100
150
200
DH50151
DH50152
DH50153
DH50154
DH50155
DH50156
DH50157
DH50201
DH50202
DH50203
DH50204
DH50205
DH50206
DH50207
DH50251
DH50252
DH50253
DH50254
DH50255
DH50256
DH50401
DH50402
DH50403
DH50404
DH50405
Standard cases (2)

Cb =
Cb =
0.18 pF
0.12 pF
(2)
(2)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
BH142
M208
M208
M208
BH142
BH142
C/W
max
50
50
45
40
35
30
30
45
45
40
35
30
30
25
40
40
35
30
30
25
35
35
30
25
20
(1) Chip presentation C2a, except:

C2b for EH50256, EH50404 and EH50405
Temperature ranges:
: -55 C to +175 C
(2) Custom cases available on request

(3) CT = Cj + Cb
Storage
: -65 C to +200 C
12-24
Vol. 1

SILICON PIN DIODES

ATTENUATOR SILICON PIN DIODES

Description
The table below presents a single set of values from the variety of customer options available for this
series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the customer
to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness.
Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from
a few MHz to several GHz.
Charact.
at 25C
Test
conditions
Type
EH40073
EH40141
EH40144
EH40225
C
O
N
F
I
G
U
R
A
T
I
O
N
PACKAGED
DIODES
CHIP DIODES
I
ZONE
Series resistance
THICKNESS
RSF
C4c
C4a
C4c
C4d
(1)
Junction
capacitance
F = 120 MHz
m
IF = 0.1 mA
IF = 1 mA
typ.
70
140
140
220
min.
70
400
200
400
min.
8
50
25
50
CJ (2)
IR
F = 1 MHz
VR = 50 V
VR = 100 V
IF = 10 mA
IR = 6 mA
pF
IF = 10 mA
max
140
800
400
800
max
16
100
50
100
min.
1.0
6.5
3.5
6.5
max
2.0
13.0
7.0
13.0
Reverse Minority carrier

current
lifetime
typ.
0.30
0.05
0.10
0.10
max
0.50
0.10
0.30
0.30
max
10
10
10
10
min.
1.5
1.5
4.0
5.5
typ.
2.0
2.5
5.0
7.0
Type
Standard
package
(3)
DH40073
DH40141
DH40144
DH40225
F 27d
F 27d
F 27d
F 27d
(1)
(2)
Other I zone thicknesses available on request

Temperature ranges:
Operating junction (Tj) : -55 C to +175 C
(3)
Storage
: -65 C to +200 C
Typical series resistance vs forward current
1000
RSF ()
EH40141 - EH40225
EH40144
100
EH40073
10
0.1
10
100

IF (mA)
12-25
Vol. 1
SILICON PIN DIODES

SILICON LIMITER PIN DIODES

Description
These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in
hermetic ceramic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise amplifiers, mixers, and detectors).
PACKAGED DIODES
CHIP DIODES
GOLD DIA
Characteristics at 25C
Test conditions
Type
EH60033
EH60034
EH60035
EH60036
EH60037
EH60052
EH60053
EH60054
EH60055
EH60056
EH60057
EH60072
EH60074
EH60076
EH60102
EH60104
EH60106
(1)
12-26
Vol. 1
Case
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
Breakdown
voltage
Junction
capacitance
Junction
capacitance
VBR
Cj0
Cj-6 (1)
IR = 10 A
VR = 0 V
VR = 6 V
f = 1 MHz
pF
f = 1 MHz
pF
Minority
Series
carrier
resistance lifetime
RSF
IF = 10 mA IF = 10 mA
f = 120 MHz IR = 6 mA
ns
typ.
min.
max
typ.
min.
max
max
typ.
25
30
35
55
65
30
35
40
50
65
80
40
50
80
50
70
110
25
25
25
25
25
50
50
50
50
50
50
70
70
70
90
90
90
50
50
50
50
50
70
70
70
70
70
70
90
90
90
120
120
120
0.14
0.20
0.28
0.45
0.70
0.10
0.14
0.20
0.28
0.45
0.70
0.10
0.20
0.45
0.10
0.20
0.45
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.06
0.12
0.23
0.06
0.12
0.23
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.08
0.17
0.40
0.08
0.17
0.40
1.8
1.5
1.0
0.9
0.7
1.8
1.4
1.1
1.0
0.9
0.8
1.7
1.4
0.9
1.7
1.2
0.8
20
20
25
30
40
30
30
35
40
50
60
50
60
100
150
250
400
Other values of capacitance available on request

SILICON PIN DIODES

PACKAGED DIODES
Test conditions
Type
DH60033
DH60034
DH60035
DH60036
DH60037
DH60052
DH60053
DH60054
DH60055
DH60056
DH60057
DH60072
DH60074
DH60076
DH60102
DH60104
DH60106
(2)
(3)
Standard case (2)

Cb = 0.18 pF
Cb = 0.12 pF
(3)
(3)
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
F 27d
M208
NOMINAL MICROWAVE CHARACTERISTICS

Insertion
loss
L
f
=
2.7
GHz
f
=
2.7
GHz
Pdiss = 1W
1dB
f = 2.7 GHz PIN = -10
case F 27d Limiting
dBm
C/W
dBm
dBm
dB
Thermal Threshold
resistance
PL
RTH
Leakage
power
POUT
Peak
power
PIN
1 s
Pulse
1% DC
dBm
CW power
PIN
max
typ.
typ.
typ.
max
max
80
80
70
60
50
80
70
60
50
45
45
70
50
40
60
50
35
+ 10
+ 10
+ 10
+ 10
+ 10
+ 15
+ 15
+ 15
+ 15
+ 15
+ 15
+ 18
+ 18
+ 18
+ 20
+ 20
+ 20
+ 20
+ 20
+ 21
+ 22
+ 23
+ 24
+ 24
+ 25
+ 26
+ 27
+ 28
+ 27
+ 30
+ 32
+ 31
+ 33
+ 35
0.1
0.1
0.1
0.2
0.2
0.1
0.1
0.1
0.1
0.2
0.2
0.1
0.2
0.2
0.2
0.2
0.3
+ 50
+ 50
+ 52
+ 53
+ 56
+ 52
+ 52
+ 53
+ 54
+ 57
+ 58
+ 54
+ 55
+ 58
+ 56
+ 59
+ 61
2.0
2.0
2.5
3.0
4.0
2.5
2.5
3.0
3.5
4.0
5.0
3.0
4.0
5.0
3.5
5.0
7.0

CT = Cj +Cb
Temperature ranges:
Storage

: -65 C to +200 C
12-27
Vol. 1
SILICON SCHOTTKY DIODES

Selection guide
Selection Guide
PAGE
SCHOTTKY BARRIER DETECTOR DIODES
12-29
SCHOTTKY BARRIER MIXER DIODES
12-30
12-28
Vol. 1


Silicon Schottky barrier detector diodes
SILICON SCHOTTKY BARRIER DETECTOR DIODES
Description
Silicon Schottky barrier detector diodes are available as:
packaged diodes
chip
They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.
Electrical characteristics packaged diodes
Frequency Tangential
sensitivity
range
Foper
Tss
Test conditions
N/A
TYPE
GHz
Video
resistance
RV
Video bandwidth = 1 MHz

IF = 30 A
dBm
CASE (1)
min.
DH340
(1)
F51
2 - 12
12 - 18
Forward
continuous Breakdown
voltage
currenT
VBR
IF
CW
IR = 10 A
N/A
mW
mA
min.
max
max
max
typ.
250
50
- 54
- 51
RF
power
PRF
Temperature ranges:
Storage
: -65 C to +175 C
Typical tangential sensitivity vs frequency
T = + 25 C
IF = 30 A
Video bandwidth = 1 MHz
TSS
(dBm)
-56
-54
-52
-51
1
10
20
f (GHz)

12-29
Vol. 1

Silicon Schottky barrier mixer diodes
SILICON SCHOTTKY BARRIER MIXER DIODES

Description
Silicon Schottky barrier mixer diodes are available in the following configurations:
packaged
chip
Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between
- 10 dBm and + 10 dBm. Medium barrier diodes are required for applications where the LO drive level
is between - 5 dBm and + 15 dBm. The use of a passivated planar construction contributes to high
reliability.
Electrical characteristics packaged diodes
Characteristics
at 25C
Frequency SSB
Noise
range
figure
Foper
NFSSB
VSWR
IF
Impedance
(ratio)
ZIF
N/A
(1)
N/A
Type
GHz
dB
max
ratio
typ.
max
DH301
DH302
DH303
DH312
DH313
DH314
DH315
DH322
DH323
DH324
DH325
F51
F51
F51
F51
F51
F51
F51
F51
F51
F51
F51
1-6
1-6
1-6
6 - 12
6 - 12
6 - 12
6 - 12
12 - 18
12 - 18
12 - 18
12 - 18
6.5
6.0
5.5
7.0
6.5
6.0
5.5
7.5
7.0
6.5
6.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
Breakdown
Total
voltage capacitance
VBR
CTO
f = 30 MHZ
F = 1 MHZ
I = 10 A
PLO = 1 mW Pulse = 3 nS R
VR = 0 V
Test conditions
Case (2)
Test pulse
energy
2
2
2
2
2
2
2
2
2
2
2
min.
max
Ergs
max
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
400
400
400
400
400
5
5
5
5
5
5
5
5
5
5
5
V
typ.
pF
typ.
3
3
3
3
3
3
3
3
3
3
3
0.40
0.40
0.40
0.25
0.25
0.25
0.25
0.17
0.17
0.17
0.17
RF Power max: 250 mW CW
Temperature ranges:
(1)
Storage
Noise figure measurement conditions:

PLO = 1 mW
fIF = 30 MHz
NFIF = 1.5 dB
noise tube: 15.6 dB
dc load = 10
test frequencies: 3.0, 9.3 or 15.0 GHz
(2)
12-30
Vol. 1

: -65 C to +175 C
TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
PAGE
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
12-32
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

-
VBR = 30 V
12-34
VBR = 45 V
12-35
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
12-36
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
12-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.

12-31
Vol. 1
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT

TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:
Cj (Vr) = Cj (0 V)
1 + Vr
Vr :
:
:
12-32
Vol. 1
Reverse voltage
Built-in potential .7V for Si
.5 for abrupt tuning varactor

TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25 C

Reverse breakdown voltage, Vb = @10 A: 30 V min.
Electrical
parameters
Breakdown
voltage
VBR
Test Conditions
IR = 10 A
Type
Junction
capacitance
Cj
F = 1 MHz
pF
(1)
DH71010
30
DH71016
30
DH71020
30
DH71030
30
DH71045
30
DH71067
30
DH71100
30
(1)
Other tolerance on request
Figure
of merit
Q
Cj0V/Cj30V
VR = 4 V
min.
Tuning
ratio
1.0 20%
1.6 20%
2.0 20%
3.0 20%
4.5 20%
6.7 10%
10 10%
VR = 4 V
F = 50 MHz
typ.
typ.
4.0
4.5
4.6
4.7
4.8
4.9
5.0
4300
4100
3900
3400
2200
2600
2200
Temperature ranges:
Operating junction (Tj):
-55 C to +125 C
Storage:
-65 C to +150 C
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
DH71010-60
DH71016-60
DH71020-60
DH71030-60
DH71045-60
DH71067-60
DH71100-60
DH71010-51
DH71016-51
DH71020-51
DH71030-51
DH71045-51
DH71067-51
DH71100-51
DH71010-53
DH71016-53
DH71020-53
DH71030-53
DH71045-53
DH71067-53
DH71100-53
DH71010-54
DH71016-54
DH71020-54
DH71030-54
DH71045-54
DH71067-54
DH71100-54
DH71010-70
DH71016-70
DH71020-70
DH71030-70
DH71045-70
DH71067-70
DH71100-70
Packages
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100

How to order?
DH71010
Diode type
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk

12-33
Vol. 1
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

VBR 30 V
Description
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
VBR (10 A) 30 V
CHIP DIODES
Gold
dia
Test Conditions
Type
Case
junction
capacitance
Cj
Fig. of
merit
Q
VR = 4 V
VR = 4 V
f = 1 MHZ
f = 50 MHZ
pF
typ.
20 % (2)
min.
PACKAGED DIODES (1)

Standard cases
Other cases
Tuning
ratio
CTO/CT30
Tuning
ratio
CTO/CT30
CASE
CAPACITANCE
Cb
CASE
CAPACITANCE
Cb
Type
Case
Case
min.
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
EH71045
EH71054
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
50
60
70
80
90
100
110
120
140
150
170
180
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
10 % (2)
4500
4500
4400
4300
4200
4100
3900
3600
3400
3200
3000
2800
DH71004
DH71006
DH71008
DH71010
DH71012
DH71016
DH71020
DH71025
DH71030
DH71037
DH71045
DH71054
Cb= 0.18 pF (3)

F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb= 0.18 pF (3)
EH71067
EH71080
EH71100
EH71120
EH71150
EH71180
EH71200
EH71220
EH71270
EH71330
EH71390
EH71470
EH71560
EH71680
EH71820
EH71999
C2a
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
C2c
C2d
C2d
200
220
250
270
300
330
350
370
410
450
500
540
590
650
720
800
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
2600
2400
2200
2000
1800
1700
1500
1400
1300
1200
950
750
650
500
400
300
DH71067
DH71080
DH71100
DH71120
DH71150
DH71180
DH71200
DH71220
DH71270
DH71330
DH71390
DH71470
DH71560
DH71680
DH71820
DH71999
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
3.0
3.4
3.7
4.0
4.3
4.5
4.6
4.6
4.7
4.7
4.8
4.8
Cb= 0.12 pF (3) min.

M208
3.3
M208
3.7
M208
4.0
M208
4.3
M208
4.5
M208
4.6
M208
4.7
M208
4.8
M208
4.8
M208
4.8
M208
4.9
M208
4.9
Cb= 0.2 pF (3)
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
(1) Custom cases available on request

(2) Closer capacitance tolerances available on request
Temperature ranges:
(3) CT = Cj + Cb
Storage
12-34
Vol. 1

: -65 C to +175 C
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
VBR 45 V
Description
This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to X band.
Chip diodes
Chip and packaged diodes

VBR (10 A) 45 V
GOLD
Characteristics at 25 C DIA
Test conditions
Type
Case
Junction
Capacitance
Cj
Fig. of
Merit
Q
VR = 4 V
VR = 4 V
f = 1 MHZ
f = 50 MHZ
STANDARD CASES
Packaged diodes (1)

OTHER CASES
Tuning
Ratio
CTO/CT45
Tuning
Ratio
CTO/CT45
Case
Capacitance
Cb
Case
Capacitance
Cb
Case
pF
Type
Case
typ.
20 % (2)
min.
Cb = 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb =0.18pF (3)
min. Cb
3.5
3.9
4.2
4.5
4.7
5.0
5.2
5.4
5.5
5.6
5.7
5.8
Cb
EH72004
EH72006
EH72008
EH72010
EH72012
EH72016
EH72020
EH72025
EH72030
EH72037
EH72045
EH72054
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
60
80
90
110
110
120
140
150
170
190
210
230
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
10 % (2)
3000
2900
2800
2700
2700
2600
2500
2400
2300
2200
2000
1900
DH72004
DH72006
DH72008
DH72010
DH72012
DH72016
DH72020
DH72025
DH72030
DH72037
DH72045
DH72054
EH72067
EH72080
EH72100
EH72120
EH72150
EH72180
EH72200
EH72220
EH72270
EH72330
EH72390
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
250
280
310
340
380
420
440
470
520
570
620
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
10 % (2)
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
DH72067
DH72080
DH72100
DH72120
DH72150
DH72180
DH72200
DH72220
DH72270
DH72330
DH72390
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb = 0.18 pF (3)
5.9
5.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
EH72470
EH72560
EH72680
C2d
C2d
C2d
680
740
820
47.0
56.0
68.0
10 % (2)
700
600
450
DH72470
DH72560
DH72680
BH28
BH28
BH28
Cb = 0.4 pF (3)
6.0
6.0
6.0
EH72820
EH72999
C2g
C2g
900
1000
82.0
100.0
350
250
DH72820
DH72999
BH141
BH141
6.0
6.0
= 0.12 pF (3)
min.
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
= 0.2pF (3)
3.7
4.1
4.5
4.7
4.9
5.2
5.5
5.6
5.7
5.7
5.8
5.9
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
(1)
(2)

Closer capacitance tolerances available on request
Temperature ranges:
(3)
CT = Cj + Cb
Storage

: -65 C to +175 C
12-35
Vol. 1
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT

TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. This family is designed for a low cost medium to high volume market that
may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards.
Application
The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of
capacitance range. They provide the highest Q factor (low reverse series resistance). Typical
applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly)
from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase
shifters, delay lines...
20 Volt hyperabrupt junction varactors

Characteristics @ Ta=+25 C
Reverse breakdown voltage, Vb = 20 V min. @ 10 A
Reverse Current, Ir = 200 nA @ 16 V
Test
conditions
Type
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
f = 1 MHz
Vr = 1 V
typ
2.5
3.6
5.2
8.0
11.0
16.0
23.0
35.0
Total capacitance (pF)

Ct
f = 1 MHz
f=1 MHz
Vr = 4 V
Vr = 12 V
20 %
typ.
1.2
0.6
1.7
0.8
2.4
1.1
3.5
1.6
4.9
2.2
7.0
3.1
10.0
4.5
15.0
6.6
Temperature ranges:
Storage : -55 C to +150 C
f = 1 MHz
Vr = 20 V
typ.
0.5
0.7
0.9
1.3
1.7
2.4
3.5
5.1
Tuning
ratio
Ct1V/Ct12V Ct1V/Ct20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
12 Volt hyperabrupt junction varactors

Characteristics @ Ta=+25 C
Reverse breakdown voltage, Vb = 12 V min. @ 10 A
Reverse Current, Ir = 200 nA @ 8 V
Test
conditions
Type
f = 1 MHz
Vr = 1 V
typ
DH77033
DH77047
DH77068
DH77100
DH77150
6.0
8.5
12.0
18.0
27.0
12-36
Vol. 1

Ct
f = 1 MHz
f=1 MHz
Vr = 2.5 V
Vr = 4 V
20 %
typ.
3.5
4.9
7.0
10.0
15.0
1.9
2.7
3.8
5.5
8.1
Temperature ranges:
Tuning
ratio
Ct1V/Ct2.5V Ct1V/Ct4V
f = 1 MHz
f = 1 MHz
typ.
typ.
1.7
1.7
1.7
1.7
1.8
3.1
3.2
3.2
3.2
3.3

TUNING VARACTOR
Typical junction capacitance versus reverse voltage
Profils in Cj
100.00
10.00
Cj (pF)
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
10
0.1
100
0.10
VR (V)
Cj (pF)
100
10
DH77033
DH77047
DH77068
DH77100
DH77150
0.1
1
1
V (V)

10
12-37
Vol. 1
TUNING VARACTOR
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
DH76010-60
DH76015-60
DH76022-60
DH76033-60
DH76047-60
DH76068-60
DH76100-60
DH76150-60
DH77033-60
DH77047-60
DH77068-60
DH77100-60
DH77150-60
DH76010-51
DH76015-51
DH76022-51
DH76033-51
DH76047-51
DH76068-51
DH76100-51
DH76150-51
DH77033-51
DH77047-51
DH77068-51
DH77100-51
DH77150-51
DH76010-53
DH76015-53
DH76022-53
DH76033-53
DH76047-53
DH76068-53
DH76100-53
DH76150-53
DH77033-53
DH77047-53
DH77068-53
DH77100-53
DH77150-53
DH76010-54
DH76015-54
DH76022-54
DH76033-54
DH76047-54
DH76068-54
DH76100-54
DH76150-54
DH77033-54
DH77047-54
DH77068-54
DH77100-54
DH77150-54
DH76010-70
DH76015-70
DH76022-70
DH76033-70
DH76047-70
DH76068-70
DH76100-70
DH76150-70
DH77033-70
DH77047-70
DH77068-70
DH77100-70
DH77150-70
Packages
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
DH77033
DH77047
DH77068
DH77100
DH77150

How to order?
DH76150
Diode type
12-38
Vol. 1
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk

TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR

Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta = +25 C
Reverse breakdown voltage, Vb = @ 10 A: 20 V min.
Reverse current,
Ir @ 16 V:
200 nA
Test
conditions
Type
Case (1)
DH76010 F27d
DH76015 F27d
DH76022 F27d
DH76033 F27d
DH76047 F27d
DH76068 F27d
DH76100 F27d
DH76150 F27d
(1)
Figure of
merit (Q)
Ct
f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
Vr = 4 V Vr = 1 V
Vr = 4 V Vr = 12 V Vr = 20 V
typ.
typ.
20%
typ.
typ.
2200
2.5
1.2
0.6
0.5
2000
3.6
1.7
0.8
0.7
1700
5.2
2.4
1.1
0.9
1400
7.7
3.5
1.6
1.3
1000
11
4.9
2.2
1.7
700
16
6.9
3.0
2.4
400
23
10.2
4.5
3.5
140
34
15.2
6.6
5.1
Tuning
ratio
Ct1V/Ct12V Ct1V/CT20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
Chip
EH76010
EH76015
EH76022
EH76033
EH76047
EH76068
EH76100
EH76150
Temperature ranges:
Storage
: -65 C to +150 C
Typical junction capacitance reverse voltage

Profils in Cj
100.00
10.00
Cj (pF)
76010
76015
76022
76033
76047
76068
76100
76150
1.00
0.01
10
0.1
100
0.10
VR (V)

12-39
Vol. 1
POWER GENERATION DIODES

Selection guide

Selection Guide
PAGE
STEP RECOVERY DIODES
-
STANDARD
12-42
SURFACE MOUNT PLASTIC PACKAGES
12-43
SILICON MULTIPLIER VARACTORS
12-40
Vol. 1

12-45

Step recovery diodes and multiplier varactor applications
STEP RECOVERY DIODES AND MULTIPLIER

VARACTOR APPLICATIONS
A Step Recovery Diode (SRD) generates pulses that can be used to multiply frequencies, and to set up
reference points, e.g. for synchronizing test instruments.
This device operates by alternately producing and consuming a charge, based on the frequency of its
input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias,
the SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the
SRD snaps off, i.e. very quickly reverts to zero conduction.
This device acts as a switch, controlling current flow by alternately storing and releasing its charge, forming
pulses at a repetition rate equal to the frequency of its input.
The output of a step recovery diode is most often used in two ways:
a pulse train can be applied to resonant circuits, which provides output power at a frequency
above that of the original input,
a pulse train can be used to develop a series of frequencies at multiples of the original input
frequencies.
Typical applications of step recovery diodes include oscillators, power transmitters and drivers,
for telecommunications, telemetry, radar and test equipment.
In choosing a SRD, the significant characteristics include:
Output Frequency (fo) ; Breakdown Voltage (VBR) ; Junction Capacitance (Cj) ; Minority Carrier Lifetime (l);
Snap-off Time (tso) ; Thermal Resistance (Rth) and Output Power (Po).
Multiplier varactors
A multiplier varactor is a physical stack of series-connected SRD units. This configuration is capable of
multiplying power.
Packages for multiplier varactors are designed to dissipate the power yield Power out
Power in
Most of these packages hold from 2 to 4 chips, this type of components are available on customer
request.

12-41
Vol. 1

Step recovery diodes (SRD)
STEP RECOVERY DIODES (S.R.D.)
Description
These diodes use mesa technology and oxide passivation. They support fast switching and multiplier
applications:
very short pulse generation,
ultra fast waveform shaping,
comb generation,
high order multiplication, at moderate power ratings.
Chip diodes
Chip and packaged diodes
Gold Breakdown Junction Min. car. Snap-Off
Characteristics dia
voltage capacitance lifetime
time
at 25C
tI
tso
Vbr
Cj
Vr =6 V
If =10mA If = 10 mA
Test conditions N/A Ir = 10 A
f = 1 MHz Ir = 6 mA Vr = 10 V
Type
Case
EH541
EH542
EH543
EH544
EH545
EH546
(1)
(2)
C2a
C2a
C2a
C2a
C2a
C2a
pF
ns
ps
typ.
min.
max
min.
typ. max
160
220
110
140
55
40
30
50
30
50
25
15
1.5
1.5
1.0
1.0
0.4
0.3
25
40
20
35
10
6

CT = Cj + Cb
90
150
90
150
75
60
140
250
140
250
100
80
Pdiss = 1 W
in F 27d
Type
DH541
DH542
DH543
DH544
DH545
DH546
Case (1)
Cb =0.1pF
(2)
A22e
A22e
A22e
A22e
A22e
A22e
C/W
max
30
25
40
35
70
100
Other cases (1)

Cb =0.18pF Cb =0.12pF
(2)
(2)
F27d
M208
F27d
M208
F27d
M208
F27d
M208
F27d
M208
F27d
M208
Temperature ranges:
Storage
12-42
Vol. 1
Packaged diodes
Thermal
resistance
Rth
: -65 C to +175 C


Plastic package Surface Mount step recovery diodes
PLASTIC PACKAGE SURFACE MOUNT S.R.D.

Description
Our SRD diodes are also available in plastic package. They incorporate a passivated mesa technology.
This family is designed for a low cost medium to high volume market that may be supplied in tape
and reel for automated pick and place assembly on surface mount circuit boards.
Application
The DH54X series support fast switching and multiplier applications:
very short pulse generation

ultra fast waveform shaping
comb generation
high order multiplication at moderate power ratings.
Temperature ranges
Operating junction (Tj) : -55C to +125C
Test
conditions
Type
DH541
DH542
DH543
DH544
DH545
DH546
Breakdown
Junction
Minority
Snapp-Off
Vbr (V)
capacitance
carrier
Cj (pF)
Vr = 6 V
f = 1 MHz
max.
1.5
1.5
1.0
1.0
0.4
0.3
lifetime t l (ns)
If = 10 mA
Ir = 6 mA
min.
25
40
20
35
10
6
time tso
(ps)
If = 10 mA
Vr = 10 V
typ.
max.
90
140
150
250
90
140
150
250
75
100
60
80
Ir = 10 A
min.
30
50
30
50
25
15
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
DH541-60
DH542-60
DH543-60
DH544-60
DH545-60
DH546-60
DH541-51
DH542-51
DH543-51
DH544-51
DH545-51
DH546-51
DH541-53
DH542-53
DH543-53
DH544-53
DH545-53
DH546-53
DH541-54
DH542-54
DH543-54
DH544-54
DH545-54
DH546-54
DH541-70
DH542-70
DH543-70
DH544-70
DH545-70
DH546-70
Packages
DH541
DH542
DH543
DH544
DH545
DH546

12-43
Vol. 1

Plastic package Surface Mount step recovery diodes
How to order?
DH541
Diode type
12-44
Vol. 1
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk


Silicon multiplier varactor
SILICON MULTIPLIER VARACTORS

Description
These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power
levels (stack configuration) and/or at high multiplication orders.
Packaged diodes
Characteristics
at 25C
Varactor
chips
Test
per
Conditions
package
Type
Case
DH294
DH200
DH270
DH110
DH293
DH252
DH256
DH292
DH267
M208b
BH142b
S268-W1
F27d
F60d
F27d
F27d
F27d
F27d
Output
freq.
Fo
Breakdown
voltage
Vbr
N/A
IR = 10 A
GHz
1
1
1
1
1
1
1
1
1
0.2 - 2
0.5 - 2
2-3
2-4
3-6
2-8
5 - 12
8 - 16
10 - 25
Junction
Min. car.
capacitance lifetime
Cj
I
VR = 6 V
min.
max
f = 1 MHz
pF
min. max
45
90
80
60
50
40
30
20
15
70
140
110
90
70
60
45
35
25
4.0
5.5
4.0
3.0
2.0
0.9
0.5
0.2
0.2
7.0
7.0
5.5
4.0
3.0
2.0
1.1
0.5
0.3
Snap-Off Thermal
time
resistance
tso
Rth
IF = 10 mA IF = 10 mA
N/A
IR = 6 mA VR = 10 V
Power
output
Po
fo = (n)fi
ns
min.
ps
max
C/W
max
W
typ.
(n)
125
250
160
100
60
35
20
10
6
400
1000
700
400
250
200
120
75
60
300
8
10
25
30
50
60
70
100
0.5
20.0
15.0
9.0
6.0
3.0
2.0
0.6
0.2
2
2
2
2
2
2
2
2
2
Temperature ranges:
Storage
: -65 C to +175 C

12-45
Vol. 1

Case styles
CASE STYLES
SURFACE MOUNT DEVICES
GENERAL PURPOSE
STRIP LINE / MICRO STRIP
PAGE
PAGE
PAGE
A22e
.....................12-48
SMD3
......................12-56
BH15
.....................12-48
BH28
.....................12-48
SMD4
......................12-56
BH16
.....................12-48
BH32
.....................12-48
SMD6
......................12-56
BH101
.....................12-49
BH35
.....................12-48
SMD8
......................12-56
BH143
.....................12-50
BH142a
.....................12-49
SOD323
......................12-56
BH151
.....................12-50
BH142b
.....................12-49
SOT23
......................12-56
BH152
.....................12-50
BH142c
.....................12-49
SOT143
......................12-57
BH153
.....................12-50
BH142d
.....................12-49
SOT323
......................12-57
BH154
.....................12-50
BH142e
.....................12-49
BH155
.....................12-50
BH142f
.....................12-49
BMH76
.....................12-53
BH167
.....................12-51
BH167s
.....................12-51
BH198
.....................12-51
F27d
.....................12-54
F30
.....................12-54
F51
.....................12-54
F54
.....................12-54
F54s
.....................12-55
F60
.....................12-55
F60d
.....................12-55
M208a
.....................12-55
M208b
.....................12-55
M208c
.....................12-55
M208d
.....................12-55
M208e
.....................12-55
M208f
.....................12-56
POWER
PAGE
BH141
......................12-49
BH158
......................12-51
BH158am ......................12-51
BH200a
......................12-52
BH202
......................12-52
BH203a
......................12-52
BH203b
......................12-52
BH203c
......................12-52
C2
.....................12-54
BH204
......................12-52
C4
.....................12-54
BH300
......................12-53
BH301
......................12-53
BH303
......................12-53
BH403a
......................12-53
BH405
......................12-53
CHIP vERSION
PAGE
S268/W1 .....................12-56
TO39
.....................12-57
W2
.....................12-57

12-47
Vol. 1

Case styles
Cb=0.1pF
A22e
1.7
D 0.35 0.41 .014 DIA .016 DIA

C
Cb=0.1pF
2.1 .067 DIA .083 DIA
25.4
BH15
1
E
25.4
SYM min.
C
.157
.173
max
min.
max
BOL MILLIMETERS
0.09
0.11
.0035
.0043
0.28
0.48
.011
.019
3.82
4.58
.15
.18
0.15
0.35
.006
.014
1.17
1.37
.046
.054
SYM min.
max
min.
max
1
4.4
INCHES
BOL MILLIMETERS
INCHES
Cb=0.16pF
BH16
0.08
0.12
.003
Cb=0.2pF
.005
0.45
0.55
.018
.022
4.58
5.58
.180
.220
0.66
0.86
.026
.034
2.4
2.6
.094
.102
BH28
2.04
SYM min.
max
min.
max
.080
.098
B 1.93 2.13 .076 DIA .084 DIA

A
A 3.00 3.20 .118 DIA .126 DIA

SYM min.
2.50
max
BOL MILLIMETERS
min.
max
INCHES
BOL MILLIMETERS
INCHES
A
B
Cb=0.2pF
Cb=0.25pF
BH32
BH35
C
A
3.5
3.9
.138
A 5.64 6.04 .222 DIA .238 DIA

SYM min.
max
BOL MILLIMETERS
min.
max
5.14
5.93
.202
.233
1.37
1.77
.054
.070
1.78
1.98
.070
.078
1.37
1.77
.054
.070
D 1.52 1.62 .060 DIA .064 DIA
.154
B 3.86 4.26 .152 DIA .168 DIA
C 3.96 4.16 .156 DIA .164 DIA
B 3.05 3.25 .120 DIA .128 DIA
INCHES
A 1.52 1.62 .060 DIA .064 DIA

SYM min.
max
BOL MILLIMETERS
B
12-48
Vol. 1

min.
max
INCHES

Case styles
Cb=0.15pF
BH101
0.05
0.15
.002
.006
0.55
0.65
.022
.026
Cb=0.4pF
BH141
.197
B
A
A
D
C
0.28
0.48
.028
4.70
5.10
.185
.201
12.8
13.4
.504
.526
.019
2.3
2.7
.091
.106
SYM min.
max
min.
max
BOL MILLIMETERS
.011
0.70
6. 40 UNF-3A
B 5.20 5.40 .205 DIA .203 DIA
A 6.50 6.70 .256 DIA .263 DIA
SYM min.
INCHES
max
BOL MILLIMETERS
min.
max
INCHES
C
B
Cb=0.2pF
BH142a
D
0.1
0.5
.004
.020
0.06
0.10
.0024
.0039
0.55
0.65
.022
.026
2.5
2.10
2.70
.083
.106
1.24
1.58
.049
.062
SYM min.
Cb=0.2pF
BH142b
B
.098
max
BOL MILLIMETERS
BH142c
Cb=0.2pF
min.
SYM min.
0.06
0.10
.0024
.0039
BH142d
0.55
0.65
.022
.026
1.24
Cb=0.2pF
A
.197
max
BOL MILLIMETERS
Cb=0.2pF
BH142e
SYM min.
.049
.062
min.
INCHES
0.06
0.10
.0024
.0019
0.55
0.65
.022
.026
1.24
Cb=0.2pF
.197
max
BOL MILLIMETERS
.062
min.
max
INCHES
.049
.062
min.
0.06
0.10
.0024
.0039
0.55
0.65
.022
.026
1.24
.197
1.58
.049
.062
SYM min.
min.
max
INCHES
0.06
0.10
.0024
.0039
0.55
0.65
.022
.026
10
1.24
SYM min.
D
max
.394
1.58
.049
.062
A 1.90 2.20 .075 DIA .087 DIA
max
INCHES
BOL MILLIMETERS
BH142f
A 1.90 2.20 .075 DIA .087 DIA

SYM min.
.049
A 1.90 2.20 .075 DIA .087 DIA
max
1.58
max
BOL MILLIMETERS
max
A 1.90 2.20 .075 DIA .087 DIA

C
1.58
INCHES
1.58
1.24
A 1.90 2.20 .075 DIA .087 DIA
A 1.90 2.20 .075 DIA .087 DIA
max
BOL MILLIMETERS
min.
max
INCHES

12-49
Vol. 1

Case styles
Cb=0.1pF
BH143
C
0.08
0.12
.003
.005
0.45
0.55
.094
.102
7.60
0.45
.299
0.55
A 2.40 2.60
B
SYM min.
D
Cb=0.25pF
BH151
max
BOL MILLIMETERS
.018
.022
E
.094
.102
min.
max
INCHES
0.08
0.12
.003
.005
0.35
0.45
.014
.018
3.70
4.30
.147
.169
0.20
0.30
BH154
1.37
.046
.054
SYM min.
max
min.
max
INCHES
0.35
0.45
.014
.018
3.70
4.30
.147
.169
0.20
0.30
.008
.012
1.17
1.37
.046
.054
SYM min.
max
min.
max
C
A
0.08
0.12
.003
.005
0.45
0.55
.018
.022
6.15
6.55
.242
.258
0.91
1.01
.036
.040
1.68
1.88
.066
.074
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
0.08
0.12
.003
.005
0.45
0.55
.018
.022
6.15
6.55
.242
.258
0.91
1.01
.036
.040
1.68
1.88
.066
.074
SYM min.
max
min.
max
INCHES
Cb=0.13pF
BH155
0.08
0.12
.003
.005
0.45
0.55
.018
.022
6.15
6.55
.242
.258
0.91
1.01
.036
.040
1.68
1.88
.066
.074
SYM min.
max
min.
max
E
C
INCHES
A
12-50
Vol. 1
.005
BOL MILLIMETERS
B
C
.012
Cb=0.13pF
.008
1.17
BOL MILLIMETERS
D
A
.003
Cb=0.13pF
BH153
0.12
Cb=0.05pF
0.08
BOL MILLIMETERS
BH152

BOL MILLIMETERS
INCHES

Case styles
Cb=0.4pF
Cb=0.4pF
BH158
4.00
4.50
.157
BH158am
.177
C 5.10 5.50 .200 DIA .216 DIA
4.90
5.30
.193
.209
A 6.50 6.70 .256 DIA .264 DIA

SYM min.
B
max
min.
4.1
5.2
4.7
5.7
SYM min.
max
B
BOL MILLIMETERS
4.4
.16
.173
5.5 .204 DIA .216 DIA

5.2
.185
.205
6.1 .224 DIA .240 DIA

max
min.
max
BOL MILLIMETERS
INCHES
INCHES
Cb=0.12pF
BH167
1.86
0.71
2.06
0.81
.073
.028
Cb=0.12pF
.081
BH167s
.032
F
E
C
B
A
B
0.61 0.66 .024 DIA .026 DIA

1.55
1.75
.060
.070
1.22 1.32 .048 DIA 052 DIA

2.57
2.87
.101
.113
1.42 1.62 .056 DIA .064 DIA
SYM min.
max
min.
max
BOL MILLIMETERS
0.81
.028
.032
1.55
1.75
.061
.069
1.22 1.32 .048 DIA .052 DIA

1.86
2.06
.073
.081
1.42 1.62 .056 DIA .064 DIA
SYM min.
max
BOL MILLIMETER
0.71
0.61 0.66 .024 DIA .026 DIA
min.
max
INCHES
E
C
INCHES
F
E
C
Cb=0.6pF
BH198
4 (.157)
0.1 (.004)
2 (.079)
.157
2 (.079)
1.70 (.070)
Anode in
4 (.079)
0.5 (.020)
Cathod
Cathod
1.02 (.040)
D1
1.55
1.75
.06
.069
1.68
1.88
.066
.074
0.07
0.15
.003
.006
B2
0.4
0.6
.016
.024
B1
0.92
1.12
.036
.044
A1
0.86
1.25
.034
.049
0.66
0.86
.026
.034
SYM min.
max
min.
max
1.25 (.049)max
Dimensions in mm (inches)
Tg : 0.1 (.004)
BOL MILLIMETER
INCHES

12-51
Vol. 1

Case styles
Cb=0.4pF
BH200a
43
47
43
47
5.49
5.89
.216
.232
J 30.48 31.50 1.200 DIA 1.240 DIA

I
A
C
6.40
.248
.049
.051
.642
.658
6.30
6.40
.248
.252
0.23
0.27
.009
.011
2.50
2..67
.098
.105
18.26
18.67
.719
.735
24.64
24.89
.970
.980
6.78
7.19
.267
.283
0.10
0.127
.004
.005
6.78
7.19
.267
.283
3.86
4.27
.152
.168
max
min.
3.10 3.25 .122 DIA .128 DIA

1.29
D
A
3.10 3.25 .122 DIA .128 DIA
BOL MILLIMETERS
K 12.14 12.24 .478 DIA .482 DIA
16.70
.980
SYM min.
.178
1.25
.735
.970
F
B
L
C
E
K
.105
A 12.50 12.90 .492 DIA .508 DIA
47
.162
16.30
.719
24.89
.098
43
4.52
18.67
24.64
2.667
47
4.12
18.26
2.50
43
L
J
BH202
.252
H
F
6.30
Cb=0.15pF
max
SYM min.
INCHES
9.4 9.64 .370 DIA .380 DIA

max
min.
BOL MILLIMETERS
Cb=0.15pF
BH203a
43
47
43
47
4.12
4.52
.162
.178
K 12.14 12.24 .478 DIA .482 DIA

J
Cb=0.15pF
BH203b
.178
3.10 3.25 .122 DIA .128 DIA
.049
.051
1.25
1.29
.049
.051
16.30
16.70
.642
.658
16.30
16.70
.642
.658
6.30
6.40
.248
.252
6.30
6.40
.248
.252
0.23
0.27
.009
.011
0.23
0.27
.009
.011
2.50
2.67
.098
.105
2.50
2.67
.098
.105
18.26
18.67
.719
.735
18.26
18.67
.719
.735
24.64
24.89
.970
.980
24.64
24.89
.970
.980
6.78
7.19
.267
.283
6.78
7.19
.267
.283
max
min.
BOL MILLIMETERS
Cb=0.15pF
BH203c
A
F
B
L
C
K
J
G
43
47
43
47
4.12
4.52
.162
.178
K
J
1.25
1.29
.049
.051
16.30
16.70
.642
.658
6.30
6.40
.248
.252
0.23
0.27
.009
.011
2.50
2.67
.098
.105
18.26
18.67
.719
.735
24.64
24.89
.970
.980
6.78
7.19
.267
.283
9.4 9.64 .370 DIA .380 DIA
SYM min.
max
BOL MILLIMETERS
min.
9.4 9.64 .370 DIA .380 DIA
SYM min.
max
min.
BOL MILLIMETERS
Cb=0.15pF
BH204
INCHES
43
47
43
47
4.12
4.52
.162
.178
J
D
A
F
B
L
C
J
G
max
K 12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122 DIA .128 DIA
INCHES
K 12.14 12.24 .478 DIA .482 DIA
L
C
max
9.4 9.64 .370 DIA .380 DIA
SYM min.
12-52
Vol. 1
47
.162
1.29
43
4.52
1.25
47
4.12
43
K 12.14 12.24 .478 DIA .482 DIA
3.10 3.25 .122 DIA .128 DIA
B
E
max
INCHES
max
INCHES

3.10 3.25 .122 DIA .128 DIA
1.25
1.29
.049
.051
16.30
16.70
.642
.658
6.30
6.40
.248
.252
0.23
0.27
.009
.011
2.50
2.67
.098
.105
18.26
18.67
.719
.735
24.64
24.89
.970
.980
6.78
7.19
.267
.283
9.4 9.64 .370 DIA .380 DIA
SYM min.
max
BOL MILLIMETERS
min.
max
INCHES

Case styles
Cb=0.2pF
Cb=0.4pF
BH300
BH301
3.25
3.45
.128
.136
5.60
6.00
.220
.236
G
F
D
6 - 32 UNC - 3A
2.97
3.38
.177
.133
0.20
0.30
.008
.012
20
.787
6.30
6.40
.248
.252
13.95
15.05
.549
.593
6.5
6.7 .256 DIA .264 DIA

max
BOL MILLIMETERS
Cb=0.4pF
BH303
E
I
H
G
3.45
.128
.136
5.60
6.00
.220
.236
6 - 32 UNC - 3A
2.97
3.38
.177
.133
0.20
0.30
.008
.012
20
.787
6.30
6.40
.248
.252
13.95
15.05
.549
.593
6.5
6.7 .256 DIA .264 DIA
BOL MILLIMETERS
.060
.064
3.02
.111
.119
4.42
4.82
.174
.190
4 - 40 UNC - 3A
2.16
2.56
.85
0.18
0.20
.007
max
.008
15.67
16.18
.617
.637
4.70
4.80
.185
.189
9.46
10.54
.372
.415
SYM min.
Cb=0.3pF
max
E
H
F
J
D
I
M
G
N
BH405
H
F
I
B
G
J
0.97
1.07
.038
.042
2.49
2.59
.098
.102
2.9
3.1
.114
.122
22.4
22.6
.882
.890
0.20
0.30
.0079
.0118
6.1
6.5
.240
.256
9.2
9.6
.362
.378
9.68
I
E
D
14
14.2
.551
BMH76
B
J
H
max
BOL MILLIMETERS
min.
A
D
max
INCHES
.120
10.08
.381
.397
2.72
3.12
.107
.123
1.57
1.98
.062
.078
0.10
0.15
.004
.006
1.78
2.03
.070
.080
4.39
4.64
.173
.183
1.90
2.16
.075
.085
25.4
10 - 32 UNF 3A
B 12.50 12.90 .492 DIA
.508
18.67
19.43
.735
.765
SYM min.
max
min.
max
I
F

INCHES
0.50
0.70
.020
.028
0.20
0.24
.008
.010
1.95
2.15
.077
.085
1.47
1.67
.058
.066
5.1
5.3
.201
.209
3.18
3.68
.125
.145
E 2.36 2.52 .093 DIA .099 DIA

D
A 19.6 19.8 .772 DIA .780 DIA

SYM min.
E
K
.559
Cb=0.15pF
5/16 - 24 UNF - 2A
max
INCHES
Typical: 45
BOL MILLIMETERS
Cb=0.4pF
min.
K 10.46 10.87 .412 DIA .428 DIA
INCHES
.101
A 3.00 3.20 .118 DIA .126 DIA
BH403a
min.
1.62
2.82
BOL MILLIMETERS
3.25
max
I
H
INCHES
SYM min.
max
H
G
A
min.
1.52
I
G
SYM min.
3.1
3.3
.122
4.2
.157
.165
3.02
3.22
.119
.127
10.3
10.5
.406
.413
SYM min.
max
min.
max
BOL MILLIMETERS
.130
INCHES
12-53
Vol. 1

Case styles
C2
1800
68.50
70.87
1500
56.69
59.06
C4G 1500
2500
59.06
1500
39.37
59.06
C2G 1140
1200
44.88
47.24
C2E
940
1000
37.01
39.37
C4E
700
1000
27.56
39.37
C2D
840
900
33.07
35.43
C4D
500
700
19.69
27.56
31.50
C4C
400
500
15.75
19.69
23.62
C4B
300
400
11.81
15.75
15.75
C4A
200
300
7.87
11.81
CON min.
max
min.
max
C2B
C2A
740
800
540
600
340
400
CON min.
A
98.43
C4F 1000
C2C
C4
C2J 1740
C2H 1440
FIG
max
29.13
21.26
13.39
min.
max
A (m)
FIG
A ()
A (m)
A ()
Cb=0.18pF
F27d
H 2.01 2.05 .079 DIA .081 DIA

G
G 2.95 3.15 .116 DIA .124 DIA
1.55 1.59 .061 DIA .063 DIA
E 1.55 1.59 .061 DIA .063 DIA
Cb=0.25pF
F30
5.15
5.65
.202
.222
1.55
1.59
.061
.063
B
A
1.74
1.82
.069
1.59
.061
.063
SYM min.
max
min.
max
0.4
0.6
.016
.024
1.4
1.6
.055
.063
B 1.93 2.13 .076 DIA .084 DIA

A 2.94 3.14 .116 DIA .124 DIA
SYM min.
.072
1.55
max
BOL MILLIMETERS
min.
max
INCHES
BOL MILLIMETERS
INCHES
Cb=0.1pF
F51
C
Cb=0.2pF
F54
D
1.47
1.67
.058
C 1.47 1.67 .058 DIA .066 DIA
B 1.93 2.13 .076 DIA .084 DIA
A
A
4.9
5.3
.193
.209
SYM min.
max
min.
max
BOL MILLIMETERS
1.0
1.2
.039
.047
0.40
0.47
.016
.019
.066
D
0.61 0.66 .024 DIA .029 DIA
1.19 1.35 .047 DIA .053 DIA
E
F
INCHES
1.70
2.00
.067
.079
2.00 2.16 .079 DIA .085 DIA
SYM min.
max
min.
max
D
C
12-54
Vol. 1

BOL MILLIMETER
INCHES

Case styles
Cb=0.2pF
F54s
A
0.36
0.46
.014
.018
0.84
0.94
.073
.047
Cb=0.2pF
F60
A 2.00 2.16 .079 DIA .085 DIA

D
SYM min.
max
min.
BOL MILLIMETERS
max
INCHES
1.51
1.63
.059
.064
1.81
1.95
.071
.077
3.76
4.21
.148
.166
B 1.19 1.35 .047 DIA .053 DIA
D
F
1.52 1.62 .060 DIA .064 DIA
1.93 2.13 .076 DIA .084 DIA
2.95 3.15 .116 DIA .124 DIA
SYM min.
max
BOL MILLIMETER
min.
max
INCHES
C
B
Cb=0.25pF
F60d
1.52
1.64
.060
.065
0.95
1.09
.037
.043
2.91
3.36
.115
.132
D
C
1.52 1.62 .060 DIA .064 DIA
1.93 2.13 .076 DIA .084 DIA
2.95 3.15 .116 DIA .124 DIA
D
F
SYM min.
max
BOL MILLIMETER
min.
Cb=0.12pF
M208a
0.1
INCHES
.015
0.06
0.1
.0024
.004
0.55
0.65
.022
.026
2.5
1.3
1.7
.052
.068
0.95
1.35
.037
.053
.004
max
0.4
.100
1,07 1,47 .042 DIA .058 DIA
SYM min.
max
BOL MILLIMETER
min.
max
INCHES
Cb=0.12pF
M208c
M208b
Cb=0.12pF
0.95
1.35
.037
.053
max
BOL MILLIMETERS
min.
0.1
.0024
.004
0.55
0.65
.022
.026
0.95
.200
1.35
.037
.053
A 1.07 1.47 .042 DIA .058 DIA
A 1.07 1.47 .042 DIA .058 DIA

SYM min.
0.06
SYM min.
max
max
BOL MILLIMETERS
min.
max
INCHES
INCHES
E
Cb=0.12pF
M208d
D
Cb=0.12pF
M208e
E
0.06
0.1
.0024
.004
0.06
0.1
.0024
.004
0.55
0.65
.022
.026
0.55
0.65
.022
.026
0.95
1.35
.037
B
A
.200
C
1.35
.037
.053
0.95
.200
.053
A 1.07 1.47 .042 DIA .058 DIA
A 1.07 1.47 .042 DIA .058 DIA
SYM min.
E
max
BOL MILLIMETERS
min.
SYM min.
max
max
BOL MILLIMETERS
INCHES
min.
max
INCHES

12-55
Vol. 1

Case styles
Cb=0.12pF
M208f
Cb=0.2pF
S268/W1
F
0.06
0.1
.0024
.004
0.55
0.65
.022
.026
.200
9.8
10.2
0.95
1.35
.392
.408
.037
.053
.015
.024
0.64
0.88
.025
.035
0.51
0.60
.020
.024
0.21
1.71
I
F
SYM min.
max
min.
max
BOL MILLIMETER
2.44 2.64 .096 DIA .104 DIA
1.07 1.47 .042 DIA .058 DIA
0.62
0.31
.008
.012
2.00
.067
.079
A
C
0.38
F
B
3 - 48 UNC 2A
5.01
5.46
SYM min.
INCHES
.197
max
min.
BOL MILLIMETER
Cb=0.11pF
SMD3
A
2.69
2.89
.106
.114
3.71
3.91
.146
.154
4.4
4.6
.173
.181
Cb=0.24pF
SMD4
B 2.19 2.39 .086 DIA .094 DIA
.215
2.85 3.25 .112 DIA .128 DIA

max
INCHES
Typical 0,2
Typical .008
Typical 1
Typical .039
0.3
0.8
.012
.031
2.9
3.5
.114
.138
2.3
.079
.091
max
min.
max
A 2.44 2.64 .096 DIA .104 DIA

SYM min.
E
max
BOL MILLIMETERS
D
min.
SYM min.
max
INCHES
BOL MILLIMETERS
INCHES
C
B
Typical 0,20
Typical .008
Typical 1.20
Typical .047
0.3
0.8
.012
.031
4.70
5.2
.185
.205
2.5
2.8
.098
.110
SYM min.
max
min.
max
SMD8
B
4.70
5.2
.185
.205
0.20
0.38
.008
.015
SYM min.
max
min.
max
Cb=0.24pF
SMD6
BOL MILLIMETERS
BOL MILLIMETERS
INCHES
INCHES
B
E
Cb=0.2pF
SOT23
SOD323
H
B
1.70
.0669
0.20
.0078
0.15
.0059
0.05
D
F
0.13
0.004
0.005
0.53
0.56
0.021
0.022
0.05
0.1
0.002 0.0004
1.07
1.14
0.042
0.045
.0020
0.43
0.46
0.017
0.018
0.30
.0118
1.78
2.04
0.070
0.080
1.10
.043
1.25
.049
2.50
.098
SYM
Typical
Typical
0.1
J
H
E
H
K
J
INCHES
0.43
0.45
0.017
2.36
2.49
0.093
0.098
1.3
1.35
0.051
0.053
2.84
3.02
0.112
0.119
max
Millimeters
min.
Inches
max
Inches
A
SYM
BOL
12-56
Vol. 1
0.037 typ.
BOL MILLIMETERS
0.94 typ.

min.
Millimeters
0.020

Case styles
SOT323
SOT143
J
A
J
I
2
0.12
.0047
0.12
0.43
.0047
.017
0.1 max.
.004 max.
1.90
.0075
0.9
.035
0.40
.0157
0.3
.012
0.80
.0315
1.3
.051
1.30
.051
0.65
.026
1.10
.043
0.3
.012
2.60
.102
2.1
.0.83
1.25
.043
1.9
.075
SYM
Typical
Typical
E
A
H
.0039
0.10
max 8
.114
Typical
2.90
Typical
A
SYM
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
Cb=0.2pF
TO39
G
E
8.3
0.41 0.48 .016 DIA .019 DIA
8.5 .327 DIA .335 DIA
44
46
44
46
0.71
0.81
.028
.032
9.40
10.40
.370
.409
12.7
.500
4.98
5.18
.196
.204
6.30
6.40
.248
.252
9.10 9.30 .358 DIA .366 DIA
I
C
H
D
I
H
SYM min.
max
BOL MILLIMETER
min.
max
INCHES
Cb=0.15pF
W2
0.71
0.81
.028
.032
0.45
0.55
.020
.022
F
E
3 - 48 UNC - 3A
0.61
0.81
.024
.032
D 1.17 1.37 .046 DIA .054 DIA

B
3.40
3.60
.134
.142
B 2.46 2.66 .097 DIA .105 DIA

C
A
4.38
4.68
.172
.184
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES

12-57
Vol. 1

Dsa 529802

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MICROWAVE SILICON COMPONENTS

MICROWAVE SILICON COMPONENTS

INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2

SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4

POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40

MICROWAVE SILICON COMPONENTS

step recovery diodes

high voltage PIN diodes

TEMEX products are available in a complete assortment of packages including:

surface mount ceramic and plastic

control and burn-in

SALES OFFICES: VISIT OUR WEB SITE AT

MICROWAVE SILICON COMPONENTS

Forward Continuous Current

Reverse Continuous Current

Reverse Pulse Current

Single Sideband Noise Figure

Noise Figure of Intermediate Frequency

Gold Contact Diameter

Local Oscillator Power

Forward Series Resistance

Minority Carrier Lifetime

Reverse Switching Time

Forward Continuous Voltage

Applicable Voltage (RF + bias)

Voltage Standing Wave Ratio

Forward Threshold Voltage

Impedance at Intermediate Frequency

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SILICON PIN DIODES

SILICON PIN DIODES

HOW TO SPECIFY A PIN DIODE?

SURFACE MOUNT PACKAGE

- PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES

- LOW COST SQUARE CERAMIC PACKAGE PIN DIODES

- SQUARE CERAMIC PIN DIODES

- NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES

HIGH VOLTAGE PIN DIODES

- TWO AND THREE PORTS RF PIN SWITCH MODULES

- ULTRAFAST SWITCHING SILICON PIN DIODES

- FAST SWITCHING SILICON PIN DIODES

- ATTENUATOR SILICON PIN DIODES

- SILICON LIMITER PIN DIODES

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SILICON PIN DIODES

HOW TO SPECIFY A PIN DIODE ?

8. Maximum loss expected

Frequency and bandwidth requirements

11. Power applied to the diode

pulse duration and duty cycle

Shunt or series assembly

forward series resistance: RSF

thermal resistance: Rth

13. Mechanical and packaging constraints

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SILICON PIN DIODES

PLASTIC PACKAGE SURFACE MOUNT SWITCHING

RF peak current (A)

Diode minority carrier lifetime (s)

DC bias current (A)

Application frequency (Hz)

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