https://www.sigcon.com/Pubs/edn/SlowWaveMode.htm
The slow-wave effect hampers signal transmission on some on-chip MIS (metal-insulator-semiconductor)
interconnections. On such interconnections, the substrate resistance adds substantially to the signal loss
and can sometimes have the peculiar effect of greatly slowing signal propagation. The resulting
slow-wave mode occurs when you adjust the substrate conductivity so that electromagnetic fields only
partially penetrate the substrate. The wave velocity then becomes a function of the substratenot just
the good dielectric insulation between the trace and the top layer of the substrate.
Figure 1 illustrates a classic on-chip MIS transmission line, comprising a metal trace, a 1-micron silicondioxide insulating layer, and a 200-micron semiconducting substrate. The solid metal layer on the back of
the substrate is called backside metallization. In this example, assume a worst-case value for the
conductivity of the silicon-substrate layer, about 50 S/m. At a frequency of 1 GHz, the intrinsic
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