Fundamentals
Chemistry 445
Spring 2004
27 April 2004
Si
So
1 1 1
+ =
S o Si f
So
Si
Magnification
Image type
So =
Si = f
M=0
real
2 f < So <
f < Si < 2 f
M<1
real
So = 2 f
Si = 2 f
M=1
real
f < So < 2 f
2 f < Si <
M>1
real
So = f
Si =
M => inf
So < f
Si > S o
M>1
virtual
http://www.matter.org.uk/tem/lenses/thin_lens_optics.htm
Condenser lenses
Field diaphragm
Minimizes glare
Image is focused in object plane
Aperture diaphragm
Objective lens
Forms inverted image
Aperture improves contrast
Eye piece
Magnification source
Electron microscopy
Oblique illumination
d min =
2 sin
Perpendicular illumination
d min =
Lmin =
2 (n sin )
sin
2 NA
= 0.01 nm at 10 keV
= 0.004 nm at 100 keV
= 102 radians
Electron Microscopy
Transmission electron microscopy (TEM)
History of TEM
1926
H. Busch showed that electric and magnetic fields of
axial symmetry acted as lenses for electrons and other
charged particles
1928
E. Ruska began serious study of magnetic lenses
1932
First description of a crude electron microscope
1986
Nobel prize for electron microscopy give to Ruska
Nobel prize for scanning tunneling microscopy to
Binning and Rohrer
Condenser System
http://www.matter.org.uk/tem/lenses/second_condenser_lens.htm
Aperture
Objective Lens
Objective lens
Objective Aperture
Objective aperture
http://www.matter.org.uk/tem/lenses/objective_aperture_2.htm
Intermediate lens
Magnifies the initial image formed
by objective lens
Focuses on initial image or
diffraction pattern formed in back
focal plane
Projector lenses
Magnifies size of image
Can have various strengths
diffraction pattern
image
Electrostatic lenses
Focusing is independent of
mass
Electrons and ions follow
same trajectory
Image is inverted
p i ds = 0
A
p ds + p ds = 0
sin 1 p1
=
sin 2 p2
Magnetic lenses
Focusing depends on
charge to mass ratio
103-105 less effective at
focusing ions
Image is inverted and
rotated
Focal length depends on
strength of magnetic field
V1 > V0
Spherical aberration
Object of extent with no aberration
d 0 ' = 12 Cs 3
For strong focusing
Cs = Ks f
Example: In a good magnetic lens design, Ks ~ 1; for an electrostatic lens, Ks > 1.
must be small (~ 10-2 rad)
Effects of diffraction
For perpendicular illumination
d=
sin
d min =
= Cs 3
d min = Cs1/ 4 3/ 4
Example: = 0.037 A (100 keV electron) and Cs = 1 mm (for TEM objective lens)
dmin = 4.74 A
Chemistry 445: Science and Technology at the Nanoscale
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Contrast in TEM
Inelastic scattering
Absorption
Occurs in all materials
Incoherent, elastic
scattering
Amorphous materials
Coherent scattering
Diffraction from singlecrystal regions
eik ' r el
(r ) =
f
r
50 nm
Electron Microscopy
Transmission electron microscopy (TEM)
1938
Von Ardenne built the first true SEM with 50-100 nm
resolution. Destroyed in 1944 Berlin air raid.
1953
McMullan and Oatley at Cambridge U. Used electron
multiplier and collected backscattered electrons from
inclined samples.
1961
First commercial instruments
1965
R.F. W. Pease and W. Nixon achieved 10 nm resolution
Chemistry 445: Science and Technology at the Nanoscale
Teri W. Odom
SEM imaging
Electron gun
Condenser lens
Electron source
Anode
Positive accelerating voltage
0.5 to 30 kV
Anode
Condenser lenses
De-magnify beam
Control probe size and current
Condenser lens
Objective aperture
Scanning coils
Stigmators
Objective lens
Sample
Objective aperture
Stigmators
Corrects astigmatism
Objective lens
Final focusing
Electron sources
Source
size (nm)
B @ 25 kV
(A/cm2/Sr)
E
(eV)
10
30000
2 x 105
2000
100
5000
5 x 106
300
>1000
<5
5 x 108
0.22
>1000
<5
5 x 107
Source
Temp
(K)
2900
LaB6
W, cold FE tip
Zr/O/W thermal FE
Lifetime
(hrs)
Electron emission
Electron emission
J 0 = AT 2 e / kT
= A / L2
Aberration-free beam
diameter
eV
J = J0 +1 sin2
kT
J =B
J eV
+ 1
B= 0
kT
Chemistry 445: Science and Technology at the Nanoscale
Teri W. Odom
4i 1
d0 =
2B
2
i=
d02
4
J=
d02
4
B 2
4i 1
2B
Spherical aberration
Uncertainty in focusing the electrons as a function of how far their trajectory is
from the center of the lens.
1
3
5 nm
d s = Cs
2
Chromatic aberration
Uncertainty in focus due to the energy spread and speed of electrons
E
d c = Cc
E
Diffraction
df =
10 nm
< 1 nm for FE tip
< 1 nm
Backscattered
Auger
Secondary electrons
0 < E < 50 eV
Backscattered electrons
50 eV < E < E0
Auger electrons
150 eV < E < 800 eV
Backscattered electrons
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Chemistry 445: Science and Technology at the Nanoscale
Teri W. Odom
Contrast in SEM
Backscattered electrons
Substrate atomic number
(Z)
Angle of beam incidence
Occurs in all materials
ibackscatt . = ibeam
Secondary electrons
Angle of beam incidence
Energy of beam incidence
Work function and surface
condition
total = in + out
total ( ) =
total (0)
cos
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Chemistry 445: Science and Technology at the Nanoscale
Teri W. Odom
10 keV
Material
4 keV
Chemistry 445: Science and Technology at the Nanoscale
Teri W. Odom
Escape depth
(Ls, nm)
Pt
MgO
23
Al
5-8
Au
3-4