Description
Applications
PDP TV
Uninterruptible Power Supply
AC-DC Power Supply
G
G
TO-3PN
VDSS
Drain-Source Voltage
ID
Drain Current
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
(Note 1)
FDA59N30
Unit
300
59
35
A
A
236
30
1734
mJ
59
EAS
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
(Note 1)
50
mJ
dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
500
4
W
W/C
-55 to +150
300
FDA59N30
Unit
(TC = 25C)
- Derate Above 25C
TJ, TSTG
TL
Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RJC
RJA
0.25
40
1
C/W
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May 2014
Part Number
Top Mark
FDA59N30
FDA59N30
Electrical Characteristics
Symbol
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Parameter
Conditions
Min.
Typ.
Max.
Unit
300
--
--
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 A
BVDSS
/ TJ
--
0.3
--
V/C
IDSS
---
---
1
10
A
A
IGSSF
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
--
--
-100
nA
On Characteristics
VGS(th)
3.0
--
5.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 29.5 A
--
0.047
0.056
gFS
Forward Transconductance
VDS = 40 V, ID = 29.5 A
--
52
--
VDS = 25 V, VGS = 0 V,
f = 1 MHz
--
3590
4670
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
--
710
920
pF
--
80
120
pF
--
140
290
ns
--
575
1160
ns
--
120
250
ns
--
200
410
ns
--
77
100
nC
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 150 V, ID = 59 A,
VGS = 10 V, RG = 25
(Note 4)
VDS = 240 V, ID = 59 A,
VGS = 10 V
(Note 4)
--
22
--
nC
--
40
--
nC
--
--
59
ISM
--
--
236
VSD
VGS = 0 V, IS = 59 A
--
--
1.4
trr
246
--
ns
VGS = 0 V, IS = 59 A,
dIF/dt =100 A/s
--
Qrr
--
6.9
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.83 mH, IAS = 59 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 59 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
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VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
10
10
150 C
1
10
25 C
o
-55 C
Notes :
1. VDS = 40V
2. 250 s Pulse Test
Notes :
1. 250 s Pulse Test
2. TC = 25
0
10
-1
10
10
10
10
10
12
0.12
RDS(ON) [ ],
Drain-Source On-Resistance
0.11
0.10
0.09
VGS = 10V
0.08
0.07
VGS = 20V
0.06
0.05
0.04
Note : TJ = 25
10
150
10
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test
0
25
50
75
100
125
150
10
175
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
9000
Capacitances [pF]
Coss
6000
Ciss
3000
Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 60V
10
VDS = 150V
VDS = 240V
2
Note : ID = 59A
0
-1
10
10
10
10
20
30
40
50
60
70
80
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1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 29.5 A
0.5
0.0
-100
200
-50
50
100
70
10 s
100 s
10
DC
10
60
1 ms
10 ms
100 ms
200
10
10
Notes :
o
50
40
30
20
1. TC = 25 C
-1
10
2. TJ = 150 C
3. Single Pulse
10
-2
10
150
10
0
25
10
10
50
75
100
125
150
10
D =0.5
-1
0.2
0.1
N otes :
1. Z JC(t) = 0.25 /W M ax.
2. D uty F actor, D =t 1 /t 2
3. T JM - T C = P DM * Z JC(t)
0.05
10
0.02
-2
0.01
PDM
single pulse
10
-5
10
-4
t1
10
-3
10
-2
10
t2
-1
10
10
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50K
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
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DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
10V
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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Mechanical Dimensions
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tm
2.
ANTI-COUNTERFEITING POLICY
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
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FDA59N30