FDS6570A

Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This N-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.

Low gate charge (47nC typical).

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.

Fast switching speed.

High performance trench technology for extremely

low RDS(ON).

Applications

High power and current handling capability.

15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 V

RDS(on) = 0.010 @ VGS = 2.5 V.

DC/DC converter
Load switch
Battery protection

SO-8

Absolute Maximum Ratings

Symbol

TA = 25C unless otherwise noted

Parameter

FDS6570A

Units

VDSS

Drain-Source Voltage

20

VGSS

Gate-Source Voltage

ID

Drain Current

8
15

- Continuous

(Note 1a)

- Pulsed
PD

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

TJ, Tstg

50

Operating and Storage Junction Temperature Range

1
-55 to +150

C/W
C/W

Thermal Characteristics
RJA
RJC

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

Thermal Resistance, Junction-to-Case

(Note 1)

25

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDS6570A

FDS6570A

13

12mm

2500 units

2000 Fairchild Semiconductor Corporation

FDS6570A Rev. C

FDS6570A

March 2000

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min Typ

Max

Units

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
TJ
IDSS

Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

ID = 250A, Referenced to 25C

VDS = 16 V, VGS = 0 V

IGSSF

Gate-Body Leakage Current, Forward

VGS = 8 V, VDS = 0 V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V

-100

nA

On Characteristics

20

V
29

mV/C

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

VGS(th)
TJ
RDS(on)

Gate Threshold Voltage

Temperature Coefficient
Static Drain-Source
On-Resistance

ID = 250A, Referenced to 25C

ID(on)

On-State Drain Current

VGS = 4.5 V, ID =15 A

VGS = 4.5 V, ID =15 A,
TJ=125C
VGS = 2.5 V, ID =12 A
VGS = 4.5 V, VDS = 5.0 V

gFS

Forward Transconductance

VDS = 5 V, ID = 15 A

0.4

0.9

1.5

-4

V
mV/C

0.006
0.009
0.008

0.0075
0.0130
0.0100

25

A
70

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS = 10 V, VGS = 0 V,
f = 1.0 MHz

4700

pF

850

pF

310

pF

(Note 2)

VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6

VDS = 10 V, ID = 15 A,
VGS = 5 V,

20

32

ns

27

44

ns

95

133

ns

35

56

ns

47

66

nC

nC

10.5

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

(Note 2)

0.65

2.1

1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.

a) 50 C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.

b) 105 C/W when

mounted on a 0.02 in2
pad of 2 oz. copper.

c) 125 C/W when

mounted on a 0.003 in2
pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

FDS6570A Rev. C

FDS6570A

Electrical Characteristics

FDS6570A

Typical Characteristics
50

2.5
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

VGS= 4.5V
ID, DRAIN CURRENT (A)

2.5V
40

2.0V
3.0V

30

20

10
1.5V
0

VGS= 2.0V

1.5

2.5V
3.0V
4.5V

0.5
0

0.4

0.8

1.2

1.6

10

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

40

50

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.
0.03

1.6

ID= 15A
VGS= 4.5V

ID= 7.0A
RDS(ON), ON RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

30

ID, DRAIN CURRENT (A)

1.4

1.2

0.8

0.024

0.018

0.012

TJ= 125 C
o

25 C
0.006

0.6
-50

-25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE ( C)

1.5

2.5

3.5

4.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.
100

VDS= 5V
ID, DRAIN CURRENT (A)

IS, REVERSE DRAIN CURRENT (A)

50
TJ= -55 C

25 C
o

40

125 C

30

20

10

VGS= 0
10

TJ=125 C
1

25 C
o

0.1

125 C

0.01

0.001

0
0.5

1.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2.5

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6570A Rev. C

(continued)

7000

ID= 13A
6000

VDS= 5V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

FDS6570A

Typical Characteristics

10V

3
15V
2

5000
Ciss
4000
3000
2000
1000

Coss
Crss

0
0

10

20

30

40

50

12

16

20

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

50

100
100s

RDS(ON) Limit

SINGLE PULSE
o

1ms
10

RJA=125 C/W

40

TA=25 C
POWER (W)

10ms
100ms
1s
10s

DC
VGS= 4.5V
SINGLE
PULSE

0.1

30

20

10

RJA= 125 C/W

0.01
0.01

0.1

10

100

0.001

VDS, DRAIN-SOURCE VOLTAGE (V)

0.01

0.1

10

100

1000

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

r(t), NORMALIZED EFFECTIVE

1
TRANSIENT THERMAL RESISTANCE

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

0.5
0.2
0.1
0.05
0.02

D = 0.5

R JA (t) = r(t) * R JA
R JA = 125C/W

0.2
0.1
0.05

P(pk)
0.02
0.01

0.01

t1
Single Pulse

0.005
0.002
0.001
0.0001

t2

TJ - TA = P * RJA (t)
Duty Cycle, D = t1 /t2

0.001

0.01

0.1

10

100

300

t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDS6570A Rev. C

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8

ACEx
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC

SyncFET
TinyLogic
UHC
VCX

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D

Mouser Electronics
Authorized Distributor

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