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0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250350 VOLTS, 20 WATTS
Features
COLLECTOR
2, 4
Symbol
Value
Unit
VCEO
Vdc
CollectorBase Voltage
2N5655G
2N5657G
VCB
EmitterBase Voltage
VEB
6.0
Vdc
IC
0.5
Adc
ICM
1.0
Adc
Base Current
IB
1.0
Adc
PD
20
0.16
W
W/C
65 to + 150
C/W
3
BASE
250
350
Vdc
1
EMITTER
275
375
TJ, Tstg
TO225
CASE 7709
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
YWW
2
N565xG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJC
6.25
C/W
Y
WW
2N565x
G
= Year
= Work Week
= Device Code
x = 5 or 7
= PbFree Package
ORDERING INFORMATION
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2013
Device
Package
Shipping
2N5655G
TO225
(PbFree)
2N5657G
TO225
(PbFree)
2N5655G, 2N5657G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc (inductive), L = 50 mH)
2N5655G
2N5657G
VCEO(sus)
V(BR)CEO
Vdc
250
350
Vdc
250
350
ICEO
ICEX
ICBO
IEBO
mAdc
0.1
0.1
mAdc
0.1
0.1
1.0
1.0
mAdc
10
10
10
25
30
15
5.0
250
1.0
2.5
10
1.0
10
25
20
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
VCE(sat)
BaseEmitter Voltage
(IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
Vdc
VBE
Vdc
DYNAMIC CHARACTERISTICS
fT
Cob
hfe
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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2
2N5655G, 2N5657G
40
30
50 mH
20
200
TO SCOPE
Hg RELAY
+
10
6.0 V
50 V
300
25
50
75
100
TC, CASE TEMPERATURE (C)
1.0
150
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
1.0
10 ms
0.5
500 ms
TJ = 150C
0.2
1.0 ms
d
c
Second Breakdown Limit
Thermal Limit @ TC = 25C
Bonding Wire Limit
Curves apply below rated VCEO
2N5655
0.1
0.05
0.02
0.01
2N5657
30
20
40
60
100
200 300 400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
600
300
200
100
70
VCE = 10 V
VCE = 2.0 V
TJ = +150C
+100C
50
+ 25C
30
20
10
1.0
-55C
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mA)
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3
70
100
200
300
500
2N5655G, 2N5657G
1.0
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
TJ = + 25C
IC/IB = 5.0
10
20
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 5. On Voltages
300
TJ = + 25C
200
C, CAPACITANCE (pF)
Cib
100
70
50
30
20
10
0.1
Cob
0.2
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 6. Capacitance
10
10
2.0
t, TIME (s)
1.0
IC/IB = 10
VCC = 300 V, VBE(off) = 2.0 V
(2N5657, only)
VCC = 100 V, VBE(off) = 0 V
0.5
0.2
IC/IB = 10
5.0
t, TIME (s)
tr
5.0
td
ts
2.0
tf
1.0
VCC = 100 V
0.5
0.1
0.05
0.01
1.0
VCC = 300 V
(Type 2N5657, only)
0.2
0.02
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
200
0.1
1.0
500
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
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4
200
500
2N5655G, 2N5657G
PACKAGE DIMENSIONS
TO225
CASE 7709
ISSUE AC
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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5
2N5655/D