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PD - 97250

IRGP4068DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068D-EPbF
Features

Low VCE (ON) Trench IGBT Technology


Low Switching Losses
Maximum Junction temperature 175 C
5 S short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra-low VF Hyperfast Diode
Tight parameter distribution
Lead Free Package

VCES = 600V
IC = 48A, TC = 100C

tSC 5s, TJ(max) = 175C

VCE(on) typ. = 1.65V

n-channel

Benefits

Device optimized for induction heating and soft switching


applications
High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI

GC

TO-247AC
IRGP4068DPbF

G
Gate

E
GC
TO-247AD
IRGP4068D-EPbF

C
Collector

E
Emitter

Absolute Maximum Ratings


Max.

Units

VCES

Collector-to-Emitter Voltage

Parameter

600

IC @ TC = 25C

Continuous Collector Current

96

IC @ TC = 100C

Continuous Collector Current

48

ICM

192

ILM

Pulse Collector Current


Clamped Inductive Load Current

IF @ TC = 160C
IFSM

Diode Continous Forward Current


Diode Non Repetitive Peak Surge Current @ TJ = 25C

IFM

Diode Peak Repetitive Forward Current

VGE

Continuous Gate-to-Emitter Voltage

20

Transient Gate-to-Emitter Voltage

30

192

8.0

175
16

PD @ TC = 25C

Maximum Power Dissipation

330

PD @ TC = 100C

Maximum Power Dissipation

170

TJ

Operating Junction and

TSTG

Storage Temperature Range

V
W

-55 to +175
C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbfin (1.1 Nm)

Thermal Resistance
Min.

Typ.

Max.

Units

RJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

Parameter

0.45

C/W

RJC (Diode)

Thermal Resistance Junction-to-Case-(each Diode)

2.0

RCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

0.24

RJA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

80

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08/16/06

IRGP4068DPbF/IRGP4068D-EPbF

Electrical Characteristics @ TJ = 25C (unless otherwise specified)


Min.

Typ.

V(BR)CES

Collector-to-Emitter Breakdown Voltage

Parameter

600

V(BR)CES/TJ

Temperature Coeff. of Breakdown Voltage

0.30

1.65

2.14

2.0

2.05

4.0

6.5

VCE(on)
VGE(th)

Collector-to-Emitter Saturation Voltage


Gate Threshold Voltage

Max. Units
V

Conditions
VGE = 0V, IC = 100A

V/C VGE = 0V, IC = 1mA (25C-175C)


IC = 48A, VGE = 15V, TJ = 25C
V

IC = 48A, VGE = 15V, TJ = 150C

VCE = VGE, IC = 1.4mA

Threshold Voltage temp. coefficient

-21

gfe
ICES

Forward Transconductance

32

S
A

VGE = 0V, VCE = 600V

IF = 8.0A

VFM
IGES

Diode Forward Voltage Drop


Gate-to-Emitter Leakage Current

1.0

150

450

1000

0.96

1.05

0.81

0.86

100

Ref.Fig
CT6
CT6
4,5,6
8,9,10

IC = 48A, VGE = 15V, TJ = 175C

VGE(th)/TJ

Collector-to-Emitter Leakage Current

mV/C VCE = VGE, IC = 1.0mA (25C - 175C)

8,9
10,11

VCE = 50V, IC = 48A, PW = 80s


VGE = 0V, VCE = 600V, TJ = 175C
7

IF = 8.0A, TJ = 150C
nA

VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)


Min.

Typ.

Qg

Total Gate Charge (turn-on)

Parameter

95

Max. Units
140

Qge

Gate-to-Emitter Charge (turn-on)

28

42

Qgc

Gate-to-Collector Charge (turn-on)

35

53

Eoff

Turn-Off Switching Loss

1275

1481

td(off)

Turn-Off delay time

145

176

tf

Fall time

35

46

Eoff

Turn-Off Switching Loss

1585

Conditions
IC = 48A

nC

VGE = 15V

Ref.Fig
18
CT1

VCC = 400V
IC = 48A, VCC = 400V, VGE = 15V
RG = 10, L = 200H,TJ = 25C

CT4

Energy losses include tail

IC = 48A, VCC = 400V, VGE = 15V


RG = 10, L = 200H,TJ = 25C
IC = 48A, VCC = 400V, VGE = 15V

RG = 10, L = 200H,TJ = 175C

CT4

Energy losses include tail

td(off)

Turn-Off delay time

165

tf

Fall time

45

Cies

Input Capacitance

3025

Coes

Output Capacitance

245

Cres

Reverse Transfer Capacitance

90

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

SCSOA

Short Circuit Safe Operating Area

IC = 48A, VCC = 400V, VGE = 15V

WF1

RG=10, L=200H, TJ = 175C


VGE = 0V
pF

17

VCC = 30V
f = 1.0Mhz
TJ = 175C, IC = 192A

VCC = 480V, Vp =600V

CT2

Rg = 10, VGE = +15V to 0V

VCC = 400V, Vp =600V


Rg = 10, VGE = +15V to 0V

16, CT3
WF2

Notes:
VCC = 80% (VCES), VGE = 20V, L = 200H, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

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IRGP4068DPbF/IRGP4068D-EPbF
100

350

90

300

80

250

70

200

Ptot (W)

IC (A)

60
50
40

150

30

100

20
50

10
0

0
0

25

50

75

100 125 150 175 200

25

50

75

100 125 150 175 200


T C (C)

T C (C)

Fig. 1 - Maximum DC Collector Current vs.


Case Temperature

Fig. 2 - Power Dissipation vs. Case


Temperature
200

1000

180
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

160
140

IC (A)

ICE (A)

100

10

120
100
80
60
40
20
0

1
10

100

1000

VCE (V)

200

180

180

140

ICE (A)

ICE (A)

100
80

120
100
80

60

60

40

40

20

20

10

VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics


TJ = 25C; tp = 80s

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VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

160

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

120

10

Fig. 4 - Typ. IGBT Output Characteristics


TJ = -40C; tp = 80s

200

140

VCE (V)

Fig. 3 - Reverse Bias SOA


TJ = 175C; VGE =15V

160

10

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics


TJ = 175C; tp = 80s

IRGP4068DPbF/IRGP4068D-EPbF
20
18
16

VCE (V)

14
12

ICE = 24A
ICE = 48A

10

ICE = 96A

8
6
4
2
0
5

10

15

20

VGE (V)

Fig. 8 - Typical VCE vs. VGE


TJ = -40C

20

20

18

18

16

16

14

14

12

ICE = 24A
ICE = 48A

10

VCE (V)

VCE (V)

Fig. 7 - Typ. Diode Forward Voltage Drop


Characteristics

ICE = 96A

12
10

ICE = 96A

ICE = 24A
ICE = 48A

0
5

10

15

20

10

VGE (V)

20

VGE (V)

Fig. 9 - Typical VCE vs. VGE


TJ = 25C

Fig. 10 - Typical VCE vs. VGE


TJ = 175C
6000

200
180

T J = 25C
T J = 175C

160

5000

140

EOFF

4000

Energy (J)

ICE (A)

15

120
100
80

3000
2000

60
40

1000

20

0
0

10
VGE (V)

Fig. 11 - Typ. Transfer Characteristics


VCE = 50V; tp = 10s

15

25

50

75

100

IC (A)

Fig. 12 - Typ. Energy Loss vs. IC


TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V

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IRGP4068DPbF/IRGP4068D-EPbF
5000

1000

4500

EOFF

tdOFF

3500

Energy (J)

Swiching Time (ns)

4000

100

3000
2500

tF

2000
1500
1000

10
0

20

40

60

80

100

25

50

IC (A)

400

18

tdOFF

16

350

Tsc

Isc

Time (s)

14

100
tF

300

12

250

10

200

150

100
50

10
0

25

50

75

100

125

Current (A)

Swiching Time (ns)

125

Fig. 14 - Typ. Energy Loss vs. RG


TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V

1000

10

12

14

16

18

VGE (V)

RG ()

Fig. 16 - VGE vs. Short Circuit


VCC = 400V; TC = 25C

Fig. 15 - Typ. Switching Time vs. RG


TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V
10000

16

VGE, Gate-to-Emitter Voltage (V)

Cies

1000

Coes
100
Cres
10

V CES = 300V

14

V CES = 400V

12
10
8
6
4
2
0

20

40

60

80

VCE (V)

Fig. 17 - Typ. Capacitance vs. VCE


VGE= 0V; f = 1MHz

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100

Rg ()

Fig. 13 - Typ. Switching Time vs. IC


TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V

Capacitance (pF)

75

100

25

50

75

100

Q G, Total Gate Charge (nC)

Fig. 18 - Typical Gate Charge vs. VGE


ICE = 48A; L = 600H

IRGP4068DPbF/IRGP4068D-EPbF

Thermal Response ( Z thJC ) C/W

D = 0.50
0.1

0.20
0.10
0.05

0.02
0.01

0.01

R1
R1
J
1

R2
R2

R3
R3

Ci= i/Ri
Ci i/Ri

1E-005

Ri (C/W)

i (sec)

0.0248

0.000014

0.0652

0.000050

0.1537

0.001041

0.2065

0.013663

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006

R4
R4

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

Thermal Response ( Z thJC ) C/W

10

D = 0.50

0.1

0.20
0.10
0.05
0.02
0.01

0.01

0.0001
1E-006

1E-005

J
1

R2
R2

R3
R3

R4
R4
C

Ci= i/Ri
Ci i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

0.001

R1
R1

Ri (C/W)

i (sec)

0.0400

0.000030

0.7532

0.000717

0.8317

0.004860

0.3766

0.036590

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4068DPbF/IRGP4068D-EPbF
L

L
VC C

D UT

80 V

DU T
4 80V

Rg

1K

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

DIODE CLAMP /
DUT
L

4x
DC

- 5V

360V

DUT /
DRIVER

DUT

VCC

Rg

Fig.C.T.3 - S.C. SOA Circuit

R=

Fig.C.T.4 - Switching Loss Circuit

VCC
ICM

C force

400H
D1

10K
C sense

DUT

VCC

G force

DUT

0.0075

Rg
E sense
E force

Fig.C.T.5 - Resistive Load Circuit

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Fig.C.T.6 - BVCES Filter Circuit

IRGP4068DPbF/IRGP4068D-EPbF
700

140

600

600

120

500

500

VCE

400

60
90% ICE
5% VCE

100

5% ICE

EOFF Loss
0.10

0.60

300

300

200

200

100

100

ICE (A)

300
200

40
20
0
-20
1.10

Time(s)

Fig. WF1 - Typ. Turn-off Loss Waveform


@ TJ = 175C using Fig. CT.4

ICE

80

tf

-100
-0.40

500

400

VCE (V)

VCE (V)

400

100

600

-100
-5.00

0.00

5.00

-100
10.00

time (S)

Fig. WF2 - Typ. S.C. Waveform


@ TJ = 25C using Fig. CT.3

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IRGP4068DPbF/IRGP4068D-EPbF
TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information


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TO-247AC package is not recommended for Surface Mount Application.

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IRGP4068DPbF/IRGP4068D-EPbF
TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information


(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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TO-247AD package is not recommended for Surface Mount Application.


Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/06

10

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