ME 4025 MECHANTRONICS ASSIGNMENT NO 3

LAST DATE OF SUBMISSION: 2 MARCH 2015

1. Write the typical values of the following parameters for Si, Ge, GaAs (both SI and CGS units)
i) band gap ii) mobility of holes and electrons at 300 K iii) effective mass of holes and electrons iv)
intrinsic carrier concentration at 300 K v) scattering time
2. What fraction of current in Intrinsic Si (
values of mobility of electron and holes.

) is carried by holes. Assume suitable

= .

3. A Pure semiconductor has a band gap of 1.25 eV. The effective mass are = .
and

= .
. Where
is the free electron mass. The carrier scattering time is temperature
dependant of the form =

. Find the following at 77K, 300K , 350K and

400K a) Concentration of electrons and holes b) Fermi level c) electron and hole mobilities d)
electrical conductivity. Draw the trend for a) , c) and d) using excel. Comment on result.

4 GaAs is a direct band gap material semiconductor with 1.42eV as band gap at 300K. Take
=
=
and independent of temperature calculate . Explain numerically how
the carrier concentration can be doubled without adding any dopant.

5. Calculate intrinsic carrier concentration of Ge at Room Temperature. Take = .

and

= .
. Where
is the free electron mass. Use this to calculate the room temperature
resistivity. Take mobility as

/v-s and

also calculate the position of

Fermi level at Room temperature. Band gap of Ge is 0.66ev.

6. In a particular semiconductor, the effective density of states are given by

and

=
. Assume
are temperature dependent. Experimentally determined
intrinsic carrier concentration as a function of temperature are tabulated below
Temperature (K)
200
300
400
500

(
1.82
5.83
3.74
1.95

7. Determine the probability of occupancy of a state that is located at (0.3 eV above

at i) O K
ii) 300K and iii) 600K. b) determine the probability of vacancy of a state that is located at 0.4 eV
below at
at 300 K and 600 K. Repeat the part b) if the state is 0.01eV above
at i) 300 K and
600 K. comment on results

8. Calculate the intrinsic carrier density of silicon at 300 K, 500K, 600K and 800 K. include the
effect of variation of band gap with temperature. Draw the dependence of intrinsic carrier
concentration with temperature. Repeat for Ge and GaAs.
9. Determine the location of the Fermi level with respect to middle of the band gap in intrinsic
silicon and intrinsic gallium arsenide at 300 K and 400 K
10. To a sample of intrinsic silicon we add
atoms per cc of phosphorous and
atoms
per cc of boron . calculate the density of majority and of the minority carriers at 300k, 400k, 500K
and 600 K. Assume all the impurities are ionized at 300K.
11. a) Determine the location of the Fermi level with respect to
and
when
phosphorus
atoms per cc are added to a sample of intrinsic silicon at 300K . repeat part a if
boron atoms
per cc replace the phosphorous atoms c) repeat part a) if the temperature T = 500 K and 600 K. d)
repeat part (a) if
atoms replace
phosphorus atoms
.
12. If (
) is theoretically the largest possible values of intrinsic carrier density that can be
generated , determine as a fraction of this value , the number of electrons that can be thermally
excited into the conduction band at 300 K in Germanium. Neglect the changes of band gap with
temperature take band gap as 0.66 eV. Repeat the problem for silicon at 300K and comment

13. A sample of silicon at 300K of lenth 2.5 cm and cross sectional area of 2 sq mm is doped with
phosphorous and
boron a) Determine the conductivity of the sample
due to electrons and that due to the holes b) the resistance of the sample. If
boron
and
phosphorous is used instead, determine a) and b)
14. A sample of Silicon is doped with
of phosphorus and
Determine the density of holes and electron b) mobility of the holes and electrons

of boron.

15. An electric field is applied to sample of Ge that is doped with

of boron. The field
has a intensity of 100 V/cm. calculate the a) velocity of electrons and holes b) the conductivity of
the sample.