2SK3115
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
FEATURES
Low gate charge
QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
Gate voltage rating 30 V
PART NUMBER
PACKAGE
2SK3115
Isolated TO-220
(Isolated TO-220)
VDSS
600
VGSS
30
ID(DC)
6.0
ID(pulse)
24
PT1
2.0
PT2
35
Channel Temperature
Tch
150
Tstg
55 to +150
IAS
6.0
EAS
24
mJ
Note1
Storage Temperature
Single Avalanche Current
Note2
Note2
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13338EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP (K)
Printed in Japan
1998, 2001
2SK3115
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
IDSS
100
IGSS
VGS = 30 V, VDS = 0 V
100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
| yfs |
VDS = 10 V, ID = 3.0 A
2.0
RDS(on)
VGS = 10 V, ID = 3.0 A
S
0.9
1.2
Input Capacitance
Ciss
VDS = 10 V
1100
pF
Output Capacitance
Coss
VGS = 0 V
200
pF
Crss
f = 1 MHz
20
pF
td(on)
18
ns
VGS(on) = 10 V
12
ns
RG = 10 , RL = 50
50
ns
15
ns
Rise Time
tr
td(off)
Fall Time
tf
QG
VDD = 450 V
26
nC
QGS
VGS = 10 V
nC
QGD
ID = 6.0 A
10
nC
VF(S-D)
IF = 6.0 A, VGS = 0 V
1.0
trr
IF = 6.0 A, VGS = 0 V
1.4
Qrr
di/dt = 50 A/s
6.5
50
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS(on)
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
VDS
ID
Starting Tch
= 1 s
Duty Cycle 1%
PG.
50
10%
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
RL
VDD
td(on)
tr
ton
td(off)
tf
toff
2SK3115
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0
20
40
60
80
100
120 140
60
40
20
160
20
40
60
80
100
120 140
160
TC - Case Temperature - C
10
)
(on
DS
0.1
1
PW
ID(DC)
Po
we
r
Di
ss
ipa
tio
n
10
m
10
0m s
Lim
s
ite
d
=1
0
s
10
0
s
1m
s
TC = 25C
Single Pulse
10
100
1000
ID - Drain Current - A
ID(pulse)
d
ite
Lim
100
Rth(ch-A) = 62.5C/W
10
Rth(ch-C) = 3.57C/W
1
0.1
0.01
10
100
1m
10 m
100 m
10
100
1000
PW - Pulse Width - s
2SK3115
Pulsed
100
ID - Drain Current - A
ID - Drain Current - A
25
VGS = 10 V
20
8V
15
6V
10
Tch = 125C
75C
10
Tch = 25C
25C
1.0
0.1
10
20
30
40
4.0
3.0
2.0
1.0
VDS = 10 V
ID = 1mA
0
50
100
150
10
Tch = 25C
25C
75C
125C
1.0
VDS = 10 V
Pulsed
0.1
0.1
10
ID - Drain Current - A
Pulsed
2.0
ID = 6.0 A
3.0 A
1.0
0
0
12
16
20
2.0
Pulsed
1.6
1.2
VGS = 10 V
20 V
0.8
0.4
0
1.0
1.0
5.0
0
50
10
VDS = 10 V
Pulsed
15
10
ID - Drain Current - A
100
3.0
ID = 6.0 A
3.0 A
2.0
1.0
VGS = 10 V
Pulsed
0
50
100
50
2SK3115
100
10
1.0
0.1
150
VGS = 10 V
0V
0.5
Pulsed
1.5
1.0
SWITCHING CHARACTERISTICS
10000
Ciss
1000
Coss
100
10
VGS = 0 V
f = 1 MHz
1
1.0
Crss
10
100
td(off)
tf
td(on)
10
tr
1
VDD = 150 V
VGS = 10 V
RG = 10
0.1
0.1
1000
di/dt = 50 A/s
VGS = 0 V
1000
100
10
0.1
1.0
10
100
10
ID - Drain Current - A
8
6
200
4
VDS
2
10
20
30
100
0
40
Qg - Gate Charge - nC
ID - Drain Current - A
2SK3115
10
IAS = 6 A
EAS
=2
4m
1.0
RG = 25
VDD = 150 V
VGS = 20 0 V
Starting Tch = 25C
0.1
10
100
1m
10 m
100
VDD = 150 V
RG = 25
VGS = 20 0 V
IAS 6 A
100
80
60
40
20
0
25
50
75
100
125
150
L - Inductive Load - H
10.0 0.3
3.2 0.2
4.5 0.2
2.7 0.2
EQUIVALENT CIRCUIT
12.0 0.2
Body
Diode
Gate (G)
13.5MIN.
4 0.2
3 0.1
15.0 0.3
Drain (D)
Source (S)
1.3 0.2
2.5 0.1
0.65 0.1
1.5 0.2
2.54
0.7 0.1
2.54
1.Gate
2.Drain
3.Source
1 2 3
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
2SK3115
[MEMO]
2SK3115
The information in this document is current as of January, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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M8E 00. 4