1501A
IRFIZ24N
HEXFET Power MOSFET
Advanced Process Technology
Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
VDSS = 55V
RDS(on) = 0.07
ID = 14A
TO-220 FULLPAK
Max.
Units
14
10
68
29
0.19
20
71
10
2.9
5.0
-55 to + 175
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
5.2
65
C/W
8/25/97
IRFIZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
55
2.0
4.5
Typ.
0.052
4.9
34
19
27
IDSS
LD
4.5
LS
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
370
140
65
12
V(BR)DSS
V(BR)DSS/TJ
I GSS
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.07
S
VDS = 25V, I D = 10A
25
VDS = 55V, VGS = 0V
A
250
VDS = 44V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
20
ID = 10A
5.3
nC
VDS = 44V
7.6
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 10A
ns
RG = 24
6mm (0.25in.)
nH
G
from package
VGS = 0V
V
DS = 25V
pF
= 1.0MHz
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
14
showing the
A
G
integral reverse
68
p-n junction diode.
S
1.3
V
TJ = 25C, IS = 7.8A, VGS = 0V
56
83
ns
TJ = 25C, IF = 10A
120 180
C
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
t=60s, =60Hz
IRFIZ24N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
10
4 .5V
2 0 s PU LSE W ID TH
TT
CJ= 2 5C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rc e C u rre n t (A )
D
I , D ra in -to -S o u rc e C u rre n t (A )
D
TOP
10
10
4 .5V
20 s P UL SE W IDTH
TT
CJ = 17 5C
100
0.1
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
TJ = 2 5 C
T J = 1 7 5 C
10
V DS = 2 5 V
2 0 s P U L SE W ID TH
5
100
100
10
10
I D = 1 7A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40 -20
20
40
60
80
T J , Junction T em perature (C )
IRFIZ24N
V GS
C is s
C rs s
C os s
C , C a p a c ita n c e (p F )
600
500
C iss
400
C os s
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
700
V DS = 4 4V
V DS = 2 8V
16
12
300
200
I D = 1 0A
C rss
100
0
10
FO R TES T C IR CU IT
SEE FIG U R E 13
A
1
100
12
16
A
20
100
1000
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
TJ = 175 C
TJ = 25C
10
VG S = 0 V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
100
10s
10
100 s
1m s
T C = 25 C
T J = 17 5C
S ing le Pulse
1
1
10m s
10
A
100
IRFIZ24N
15
RD
VDS
VGS
D.U.T.
RG
- VDD
10
10V
Pulse Width 1 s
Duty Factor 0.1 %
0
25
50
75
100
125
TC , Case Temperature
150
175
( C)
10%
VGS
td(on)
tr
t d(off)
tf
Thermal Response
(Z thJC )
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D =
t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
IRFIZ24N
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01
V(BR)DSS
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
140
L
VDS
TO P
120
BOT TO M
100
80
60
40
20
V D D = 2 5V
25
tp
50
A
75
100
125
150
175
VDD
VDS
IAS
50K
QG
12V
.2F
.3F
10 V
QGS
ID
4.2A
7 .2A
10A
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
IRFIZ24N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
IRFIZ24N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)
3.40 (.133 )
3.10 (.123 )
4.8 0 (.189)
4.6 0 (.181)
-A 3.70 (.145)
3.20 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2 .80 (.110)
2 .60 (.102)
LE AD A S SIGN M E N T S
1 - GA TE
2 - D R AIN
3 - SO U R C E
7 .10 (.280)
6 .70 (.263)
1.15 (.04 5)
M IN .
N O T ES :
1 D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982
3
2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-B-
13 .7 0 (.540)
13 .5 0 (.530)
C
A
3X
1.40 (.05 5)
1.05 (.04 2)
3X
0.9 0 (.035)
3X 0.7 0 (.028)
0.25 (.010 )
A M
0.48 (.019)
0.44 (.017)
2.85 (.112 )
2.65 (.104 )
2 .54 (.100)
2X
M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
A-B -C -D = 4.80 (.189 )
PA RT NU MBE R
IRF I840G
LOGO
E 401 9 24 5
AS SE MBLY
LOT COD E
D ATE CODE
(YYW W )
YY = YE AR
W W = W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/