2SK3934

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3934
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: R DS (ON) = 0.23 (typ.)

High forward transfer admittance: |Yfs| =8.2 S (typ.)
Low leakage current: IDSS = 100 A (V DS = 500 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

V DSS

500

Drain-gate voltage (RGS = 20 k)

V DGR

500

Gate-source voltage

V GSS

30

ID

15

IDP

60

Drain power dissipation (Tc = 25C)

PD

50

Single pulse avalanche energy

(Note 2)

EA S

1.08

Avalanche current

IAR

15

Repetitive avalanche energy (Note 3)

EAR

5.0

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

-55~150

DC
Drain current

(Note 1)

Pulse (t = 1 ms)
(Note 1)

A
1: Gate
2: Drain
3: Source

JEDEC

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.5

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 8.16mH, IAR = 15 A, R G = 25

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.
3

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2SK3934
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

V GS = 25 V, V DS = 0 V

10

V (BR) GSS

IG = 10 A, V DS = 0 V

30

IDSS

V DS = 500 V, V GS = 0 V

100

V (BR) DSS

ID = 10 mA, V GS = 0 V

500

V th

V DS = 10 V, ID = 1 mA

2.0

4.0

Drain-source ON resistance

RDS (ON)

V GS = 10 V, ID = 7.5 A

0.23

0.3

Forward transfer admittance

Yf s

V DS = 10 V, ID = 7.5 A

2.3

8.2

Input capacitance

Ciss

3100

Reverse transfer capacitance

Crss

20

Output capacitance

Coss

270

V OUT

70

RL =26

130

Gate leakage current

Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage

Rise time

V DS = 25 V, V GS = 0 V, f = 1 MHz

tr

Turn-on time

ton

50

Switching time
Fall time

tf

Turn-off time

toff

Total gate charge

ID = 7.5 A

10 V
V GS
0V

ns
V DD
200 V

Duty <
= 1%, tw = 10 s

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

pF

V DD
400 V, V GS = 10 V, ID = 15A

70

280

62

40

22

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current

(Note 1)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDR

15

IDRP

60

V DSF

IDR = 15A, V GS = 0 V

1.7

Reverse recovery time

trr

IDR = 15A, V GS = 0 V,

1.3

Reverse recovery charge

Qrr

dIDR /dt = 100 A/s

18

Forward voltage (diode)

Marking

K3934

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3934

ID V DS

16

ID V DS
50

COMMON SOURCE
Tc = 25C
PULSE TEST

6.6V

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

20

6.4V
10V
6.2V

8V
7V

12

6V

6.8V
5.8V
8
5.4V
4

0
0

VGS = 5V

DRAINSOURCE VOLTAGE VDS

7.5V

30

7V

20

6.5V
6V

10

0
0

10

(V)

DRAINSOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

Tc = 25C

PULSE TEST

30
Tc = 100C

Tc = 55C

20

10

GATESOURCE VOLTAGE VGS

10

20

(V)

COMMON SOURCE
Tc = 25
8

PULSE TEST

ID = 15 A

ID = 7.5 A
ID = 3.8 A

0
0

12

16

GATESOURCE VOLTAGE VGS

Yf s ID

20

(V)

RDS (ON) ID
1000

DRAINSOURCE ON RESISTANCE
RDS (ON) (m)

FORWARD TRANSIENT ADMITTANCE

Yfs (S)

16

10

(V)

100
COMMON SOURCE
VDS = 20 V
Tc = 55C

PULSE TEST
10

100
25
1

0.1
0.1

12

V DS V GS

COMMON SOURCE

0
0

DRAINSOURCE VOLTAGE VDS

ID V GS

40

8V

40

VGS = 5 V

50

VDS = 20 V

10V

COMMON SOURCE
Tc = 25C
PULSE TEST

10

100

DRAIN CURRENT DI (A)

VGS = 10 V

100

COMMON SOURCE
Tc = 25C
PULSE TEST
10
1

10

100

DRAIN CURRENT DI (A)

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2SK3934

RDS (ON) Tc

IDR V DS
DRAIN REVERSE CURRENT ID R (A)

COMMON SOURCE
VGS = 10 V
PULSE TEST

800

600

ID = 15A

400

7.5
3.8
200

0
80

40

40

80

120

160

100
COMMON SOURCE
Tc = 25C
PULSE TEST
10

10
1
5
3
1
VGS = 0 V
0.1
0

CASE TEMPERATURE Tc (C)

0.4

0.8

C V DS

V th Tc
5

GATE THRESHOLD VOLTAGE

Vth (V)

CAPACITANCE C (pF)

Ciss

1000

Coss

100
COMMON SOURCE
Crss

VGS = 0 V
f = 1 MHz
Tc = 25C

10
0.1

10

2
COMMON SOURCE
VDS = 10 V
1

ID = 1 mA
PULSE TEST

0
80

100

40

40

80

120

DRAINSOURCE VOLTAGE VDS (V)

CASE TEMPERATURE Tc (C)

PD Tc

DYNAMIC INPUT/OUTPUT
CHARACTERISTICS

80

DRAINSOURCE VOLTAGE VDS (V)

DRAIN POWER DISSIPATION PD (W)

1.6

DRAINSOURCE VOLTAGE VDS (V)

10000

60

40

20

0
0

1.2

40

80

120

160

CASE TEMPERATURE Tc (C)

500

400

160

20

16

VDS
VDD = 100 V

400V

300

12

200V
8

200
COMMON SOURCE

VGS

ID = 15 A

100

Tc = 25C
PULSE TEST
0
0

20

40

60

80

GATESOURCE VOLTAGE VGS (V)

DRAINSOURCE ON RESISTANCE
RDS (ON) (m)

1000

0
100

TOTAL GATE CHARGE Qg (nC)

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2SK3934

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

r th tw
10

Duty=0.5
0.2
0.1

0.1

0.05
PDM

0.02

t
0.01

0.01

SINGLE PULSE

Duty = t/T
Rth (ch-c) = 2.5C/W
0.001
10

100

10

100

10

PULSE WIDTH tw (s)

SAFE OPERATING AREA

EA S Tch
1200

ID max (PULSED) *

AVALANCHE ENERGY EAS (mJ)

100

100 s *

1 ms *

10

0.1

DC OPERATION
Tc = 25C

Tc = 25C
CURVES

MUST

BE

DERATED

LINEALY WITH INCREASE IN

TEMPERATURE
0.01
1

10

100

1000

800

600

400

200

0
25

*SINGLE NONREPETITIVE PULSE

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

VDSS max

DRAIN CURRENT ID (A)

ID max (CONTINUOUS) *

BVDSS

15 V

1000

IAR

15 V

DRAINSOURCE VOLTAGE VDS (V)

V DD
TEST CIRCUIT
RG = 25
V DD = 90 V, L = 8.13 mH

V DS

WAVE FORM
? AS =

1
2

BVDSS
L I2
B
VDSS VDD

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2SK3934

RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

2004-12-03