8 24 GHz Output 2
Active Frequency Multiplier
Data Sheet
Chip Size: 1600 x 1000 m (64 x 40 mils)
Chip Size Tolerance: 10 m ( 0.4 mils)
Chip Thickness: 100 10 m (4 0.4 mils)
Pad Dimensions: 120 x 80 m (5x3 0.4 mils)
Description
Features
V
-3.0
Vg
Id
Drain Current
mA
120
Pin
CW Input Power
dBm
15
Tch
+150
Tstg
Tmax
-65
0.5
+150
+300
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Applications
Microwave radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
Units
Min.
Typ.
Max.
Idq
mA
80
85
105
Vg
-1.5
-1.4
-1.0
qch-b
Thermal Resistance[2]
(Backside Temperature, Tb = 25C)
C/W
25
Notes:
1. Ambient operational temperature TA = 25C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (qch-b) = 26C/W at Tchannel (Tc) = 34C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25C calculated from measured data.
Minimum
Typical
Maximum
Sigma
Fin
Input Frequency
GHz
4 to 10
Fout
Output Frequency
GHz
8 to 24
Po
Output Power[4]
dBm 10.5
14
Fo
Fundamental Isolation
dBc
18
25
1.8
(referenced to Po)
0.6
dBc
25
P-1dB
dBm
+1
RLin
dB
-15
RLout
dB
-9
SSB
DBc/Hz
-135
2.5
Notes:
3. Small/Large -signal data measured in wafer form TA = 25C.
4. 100% on-wafer RF test is done at Pin=+3dBm, output frequency = 10,16, and 20 GHz.
5. Specifications are derived from measurements in a 50-W test environment. Aspects of the multiplier performance may be improved over a
more narrow bandwidth by application of additional matching.
(TA = 25C, Vdd = 5 V, Idq = 85 mA, Vg = -1.4 V, Zin = Zout = 50 W unless otherwise stated)
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2H
1H
3H
4H
10
12
14
16
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Note: These measurements are in 50 W test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by
application of additional conjugate, linearity or low noise (Gopt) matching.
18
20
22
24
26
-40C [2H]
+25C [2H]
+85C [2H]
-40C [1H]
+25C [1H]
+85C [1H]
10
12
14 16 18 20 22
Output Frequency (GHz)
10
15
17
18
16
15
14
13
Pin=-2dBm
Pin= 0dBm
Pin=+2dBm
Pin=+4dBm
12
11
8
10
12
14
16
18
20
Output Frequency (GHz)
22
24
30
Pin=-2dBm
Pin= 0dBm
Pin=+2dBm
Pin=+4dBm
35
10
12
14
16
18
20
Output Frequency [GHz]
22
24
26
11
160
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
150
-5
25
-10
-15
-20
S11
S22
-25
4
10
12
14 16 18
Frequncy (GHz)
20
40
26
-30
26
19
10
24
20
22
24
26
140
130
120
110
100
90
80
-11
-9
-7
-5
-3 -1 1
3
5
Input Power [1H] (dBm)
20
16
20
Fout=8GHz
14
12
10
8
6
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
4
2
0
-11
-9
-7
-5 -3 -1 1
3
Input Power [1H] (dBm)
18
14
12
10
8
6
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
4
2
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
Fout=14GHz
12
10
8
6
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
-9
-7
-5 -3 -1 1
3
5
Input Power [1H] (dBm)
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
11
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
30
35
Fout=10GHz
40
-9
-7
-5 -3 -1
1
3
5
Input Power [1H] (dBm)
11
10
18
4
2
0
-11
-7
20
14
-9
25
45
-11
11
16
Fout=8GHz
40
20
Fout=10GHz
-9
35
16
0
-11
30
45
-11
11
20
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
25
Suppression [1H] (dBc)
18
11
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
15
20
25
30
Fout=14GHz
35
-11
-9
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
11
10
20
18
Suppression [1H] (dBc)
16
14
12
Fout=16GHz
10
8
6
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
4
2
0
-11
-9
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
20
16
14
12
10
8
Fout=20GHz
6
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
4
2
-9
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
-7
-5 -3 -1
1
3
Input Power [1H] (dBm)
11
11
11
10
15
20
25
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
30
35
-11
11
-9
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
20
18
16
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
10
Suppression [1H] (dBc)
-9
Fout=20GHz
14
12
10
8
Fout=22GHz
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
4
2
-9
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
30
18
0
-11
25
0
-11
20
35
-11
11
Fout=16GH
15
11
15
20
25
Fout=22GHz
30
35
-11
-9
-7
-5 -3 -1
1
3
5
Input Power [1H] (dBm)
5
Fout=26GHz
Vd=4.5V, Vg=-1.2V
Fout=26GHz
Suppression [1H] (-dBc)
20
18
16
14
12
10
8
6
4
2
0
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
-11 -9
-7
-5
-3
-1
11
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
-170
1.E+02
10
15
20
Vg=-1.2V, Vd=4.5V
Vg=-1.2V, Vd=5.0V
Vg=-1.4V, Vd=4.5V
Vg=-1.4V, Vd=5.0V
25
30
35
-11
-9
-7
-5
-3 -1
1
3
5
Input Power [1H] (dBm)
11
Fout=15.6GHz
M/N
@ fo
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
M/N
@ 2fo
A. DIFF. AMP
ACTIVE BALUN
Figure 22.
Assembly Techniques
The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly
to the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1,2].
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding
it. This can be accomplished by mounting a gold plate
metal shim (same length and width as the MMIC) under
the chip which is of correct thickness to make the chip
and adjacent circuit the same height. The amount of
epoxy used for the chip and/or shim attachment should
be just enough to provide a thin fillet around the bottom
perimeter of the chip or shim. The ground plan should
be free of any residue that may jeopardize electrical or
mechanical attachment.
The location of the RF bond pads is shown in Figure
24. Note that all the RF input and output ports are in a
Ground-Signal-Ground configuration.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is normally sufficient for signal connections, however double bonding
with 0.7 mil gold wire or use of gold mesh is recommended for best performance, especially near the high
end of the frequency band.
VdAB
VgD
RFin
Vdd
RFout
1000
715
1310
VdAB
VgD
1478
Vdd
660
660
RFin
RFI
RFout
472
0
0
1600
Vd
Vg
/100 pF
VdAB
/100 pF
VgD
Vdd
RFin
RFout
50 OHM LINE
Ordering Information:
AMMC-6120-W10 = 10 devices per tray
AMMC-6120-W50 = 50 devices per tray
For product information and a complete list of distributors, please go to our website:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2013 Avago Technologies. All rights reserved. Obsoletes 5989-3944EN
AV02-0743EN - April 30, 2013
50 OHM LINE