FQP30N06L

FQP30N06L
N-Channel QFET MOSFET

60 V, 32 A, 35 m
Description
Features
This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
32 A, 60 V, RDS(on) = 35 m (Max.) @ VGS = 10 V,

ID = 16 A
Low Gate Charge (Typ. 15 nC)
Low Crss (Typ. 50 pF)
100% Avalanche Tested
175C Maximum Junction Temperature Rating
GD
S
TO-220
S
Absolute Maximum Ratings

Symbol
VDSS
ID
TC = 25C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
(Note 1)
FQP30N06L
60
Unit
V
32
22.6
128
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
32
EAR
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
7.9
7.0
79
0.53
-55 to +175
mJ
V/ns
W
W/C
C
300
FQP30N06L
1.90
Unit
C/W
62.5
C/W
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
20
350
mJ
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RJA
Thermal Resistance, Junction-to-Ambient, Max.
2001 Fairchild Semiconductor Corporation

FQP30N06L Rev. C1
www.fairchildsemi.com
FQP30N06L N-Channel QFET MOSFET
November 2013
Part Number
FQP30N06L
Top Mark
FQP30N06L
Package
TO-220
Electrical Characteristics
Symbol
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
60
--
--
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.06
--
V/C
VDS = 60 V, VGS = 0 V
--
--
VDS = 48 V, TC = 150C
--
--
10
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
1.0
--
2.5
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 16 A
VGS = 5 V, ID =16 A
---
0.027
0.035
0.035
0.045
gFS
Forward Transconductance
VDS = 25 V, ID = 16 A
--
24
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
800
1040
pF
--
270
350
pF
--
50
65
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 16 A,
RG = 25
(Note 4)
VDS = 48 V, ID = 32 A,
VGS = 5 V
(Note 4)
--
15
40
ns
--
210
430
ns
--
60
130
ns
--
110
230
ns
--
15
20
nC
--
3.5
--
nC
--
8.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
32
ISM
--
--
128
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 32 A
Drain-Source Diode Forward Voltage
--
--
1.5
trr
Reverse Recovery Time
--
60
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 32 A,
dIF / dt = 100 A/s
--
90
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 400 H, IAS = 32 A, VDD = 25 V, RG = 25 , starting TJ = 25C.
3. ISD 32 A, di/dt 300 A/us, VDD BVDSS, starting TJ = 25C.
4.Essentially independent of operating temperature.

FQP30N06L Rev. C1
Package Marking and Ordering Information
10
Top :
ID, Drain Current [A]
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10
10
10
175
25
Notes :
1. 250 s Pulse Test
2. TC = 25
Notes :
1. VDS = 25V
2. 250 s Pulse Test
-55
10
-1
10
10
10
10
VDS, Drain-Source Voltage [V]
10
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
80
2
IDR, Reverse Drain Current [A]
RDS(ON) [m ],
Drain-Source On-Resistance
10
60
VGS = 5V
VGS = 10V
40
20
Note : TJ = 25
10
20
40
60
80
100
10
120
0.4
0.6
2000
1.2
1.4
1.6
12
V G S , Gate-Source Voltage [V]
Coss
Ciss
Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
0
-1
10
1.0
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
1500
0.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Capacitance [pF]
Notes :
1. VGS = 0V
2. 250 s Pulse Test
25
175
10
VDS = 30V
VDS = 48V
2
Note : ID = 32A
0
0
10
10
Figure 5. Capacitance Characteristics

FQP30N06L Rev. C1
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Typical Characteristics
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.0
1.5
1.0
0.5
Notes :
1. VGS = 10 V
2. ID = 16 A
0.0
-100
200
-50
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
40
10
Operation in This Area

is Limited by R DS(on)
100 s
1 ms
10 ms
DC
10
Notes :
30
20
10
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
25
10
-1
10
10
10
10
50
ZZJC
(t),
(t),Thermal
Therm al
Response
Response
[oC/W]
JC
Figure 9. Maximum Safe Operating Area
10
125
150
175
D = 0 .5
0 .2
N otes :
1 . Z J C( t ) = 1 . 9 0 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
0 .0 5
-1
0 .0 2
0 .0 1
PDM
t1
s in g le p u ls e
10
100
Figure 10. Maximum Drain Current

vs. Case Temperature
0 .1
10
75
TC, Case Temperature []
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve

FQP30N06L Rev. C1
Typical Characteristics (continued)
50K
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
V
10V
GS
GS
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FQP30N06L Rev. C1
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
VGS
( Driver )
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FQP30N06L Rev. C1
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

FQP30N06L Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:
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expected to result in a significant injury of the user.
2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FQP30N06L Rev. C1
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FQP30N06L

N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is

32 A, 60 V, RDS(on) = 35 m (Max.) @ VGS = 10 V,

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

Thermal Resistance, Junction-to-Ambient, Max.

2001 Fairchild Semiconductor Corporation

FQP30N06L N-Channel QFET MOSFET

TC = 25C unless otherwise noted.

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Reverse

VGS = -20 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2001 Fairchild Semiconductor Corporation

FQP30N06L N-Channel QFET MOSFET

Package Marking and Ordering Information

ID, Drain Current [A]

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR, Reverse Drain Current [A]

ID, Drain Current [A]

V G S , Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

Ciss = Cgs + Cgd (Cds = shorted)

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 5. Capacitance Characteristics

2001 Fairchild Semiconductor Corporation

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

Figure 6. Gate Charge Characteristics

FQP30N06L N-Channel QFET MOSFET

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

ID, Drain Current [A]

ID, Drain Current [A]

Operation in This Area

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

TC, Case Temperature []