BSO300N03S

OptiMOS2 Power-Transistor

Product Summary

Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC

V DS

30

R DS(on),max

30

ID

7.2

Qualified according to JEDEC for target applications

N-channel
Logic level
P-DSO-8

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)
Avalanche rated
dv /dt rated

Type

Package

Ordering Code

Marking

BSO300N03S

P-DSO-8

Q67042-S4205

300N3S

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter

Continuous drain current

Value

Symbol Conditions

ID

Unit

10 secs

steady state

T A=25 C2)

7.2

5.7

T A=70 C2)

5.8

4.6

Pulsed drain current

I D,pulse

T A=25 C3)

29

Avalanche energy, single pulse

E AS

I D=7.2 A, R GS=25

10

mJ

Reverse diode dv /dt

dv /dt

I D=7.2 A, V DS=20 V,
di /dt =200 A/s,
T j,max=150 C

kV/s

Gate source voltage

V GS

Power dissipation

P tot

Operating and storage temperature

T j, T stg

20
T A=25 C2)

1.56
-55 ... 150

W
C

55/150/56

IEC climatic category; DIN IEC 68-1

Rev. 1.11

2.5

page 1

2004-02-09

BSO300N03S
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

35

minimal footprint,
t p10 s

110

minimal footprint,
steady state

150

6 cm2 cooling area2),

t p10 s

50

6 cm2 cooling area2),

steady state

80

Thermal characteristics
Thermal resistance,
junction - soldering point

R thJS

Thermal resistance,
junction - ambient

R thJA

K/W

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics
Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

30

Gate threshold voltage

V GS(th)

V DS=V GS, I D=8 A

1.2

1.6

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,
T j=25 C

0.1

V DS=30 V, V GS=0 V,
T j=125 C

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=6.1 A

36

45

V GS=10 V, I D=7.2 A

25

30

0.6

14

Gate resistance

RG

Transconductance

g fs

1)

|V DS|>2|I D|R DS(on)max,

I D=7.2 A

J-STD20 and JESD22

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3)

See figure 3

Rev. 1.11

page 2

2004-02-09

BSO300N03S
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

450

600

160

210

Dynamic characteristics
Input capacitance

C iss

Output capacitance

C oss

Reverse transfer capacitance

C rss

23

34

Turn-on delay time

t d(on)

2.3

3.4

Rise time

tr

2.2

3.3

Turn-off delay time

t d(off)

9.3

14

Fall time

tf

1.6

2.4

Gate to source charge

Q gs

1.3

1.8

Gate charge at threshold

Q g(th)

0.7

0.95

Gate to drain charge

Q gd

0.9

1.3

Switching charge

Q sw

1.5

2.2

Gate charge total

Qg

3.5

4.6

Gate plateau voltage

V plateau

3.0

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,
V GS=0 to 5 V

3.1

4.1

Output charge

Q oss

V DD=15 V, V GS=0 V

3.8

5.1

2.5

29

V GS=0 V, V DS=15 V,
f =1 MHz

V DD=15 V, V GS=10 V,
I D=3.6 A, R G=2.7

pF

ns

Gate Charge Characteristics4)

V DD=15 V, I D=3.6 A,
V GS=0 to 5 V

nC

V
nC

Reverse Diode
Diode continous forward current

IS

Diode pulse current

I S,pulse

Diode forward voltage

V SD

V GS=0 V, I F=2.5 A,
T j=25 C

0.79

Reverse recovery charge

Q rr

V R=12 V, I F=I S,
di F/dt =400 A/s

nC

4)

T A=25 C

See figure 16 for gate charge parameter definition

Rev. 1.11

page 3

2004-02-09

BSO300N03S
1 Power dissipation

2 Drain current

P tot=f(T A); t p10 s

I D=f(T A); V GS10 V; t p10 s

2.5
6

I D [A]

P tot [W]

1.5

1
2
0.5

0
0

40

80

120

160

40

80

T A [C]

160

T A [C]

3 Safe operation area

4 Max. transient thermal impedance

1)

I D=f(V DS); T A=25 C ; D =0

Z thJS=f(t p)

parameter: t p

parameter: D =t p/T

102

120

102

100

100

10 s

101

0.5
10

100 s

I D [A]

1 ms

100

limited by on-state
resistance

10

Z thJS [K/W]

101

10 ms
10 s

0.2

0.1

0.05

100

0.02
1

0.01

10-1

0.1

single pulse
DC

10-2

0.1

-1

10

Rev. 1.11

10-1

0.01
10

10

100

V DS [V]

10

10

page 4

0.1
0.00001

0.0001

0.001

0.01

0.1

10

10-5

10-4

10-3

10-2

10-1

100

101

t p [s]

2004-02-09

BSO300N03S
5 Typ. output characteristics

6 Typ. drain-source on resistance

I D=f(V DS); T j=25 C

R DS(on)=f(I D); T j=25 C

parameter: V GS

parameter: V GS

80
10 V
4.5 V

70
3.3 V

60

I D [A]

3.1 V

3V

R DS(on) [m]

3.2 V

4V

3.8 V

3.6 V

3.4 V

50
4.2 V

40

4.5 V
5V

30
10 V

20
2.8 V

10
2.6 V

0
0

V DS [V]

10

15

20

15

20

I D [A]

7 Typ. transfer characteristics

8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max

g fs=f(I D); T j=25 C

parameter: T j
25

30

25

20

20

I D [A]

g fs [S]

15
15

10
10

5
5
125 C

25 C

0
0

10

I D [A]

V GS [V]

Rev. 1.11

page 5

2004-02-09

BSO300N03S
9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=7.2 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS

parameter: I D

50

2.5

40

2
80 A

30

V GS(th) [V]

R DS(on) [m]

98 %

typ

20

10

1.5
8 A

0.5

0
-60

-20

20

60

100

140

180

-60

-20

20

60

100

140

180

T j [C]

T j [C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)
parameter: T j

103

102

1000

100

25 C
Ciss

150 C

102

150 C, 98 %

101

10

100

I F [A]

C [pF]

Coss

100

Crss

101

25 C, 98%

10-1

10

10

20

30

V DS [V]

Rev. 1.11

0.1

0.2

0.4

0.6

0.8

1.2

V SD [V]

page 6

2004-02-09

BSO300N03S
13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25

V GS=f(Q gate); I D=3.6 A pulsed

parameter: T j(start)

parameter: V DD

10

12
15 V

10

25 C
100 C

6V

V GS [V]

I AV [A]

24 V

125 C

0.1

0
1

10

100

1000

Q gate [nC]

t AV [s]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

36

V GS
34

Qg

32

V BR(DSS) [V]

30
28

V g s(th)

26
24

Q g (th)

22

Q sw
Q gs

20
-60

-20

20

60

100

140

Q gate

Q gd

180

T j [C]

Rev. 1.11

page 7

2004-02-09

BSO300N03S
Package Outline
P-DSO-8: Outline

Footprint

Packaging
Tape

Tube

Dimensions in mm
Rev. 1.11

page 8

2004-02-09

BSO300N03S
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strae 53
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts started herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.11

page 9

2004-02-09

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