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Pre-Lab #6: BJT Characteristics and

Small-Signal Models
Adrian Hendels
abh12@students.uwf.edu
Dept. of Electrical & Computer Engineering
University of West Florida
Course: EEE4308L Spring 2015
February 17, 2015

Part One:
The circuit below (Figure 6.3 from handout) is used to find output characteristics.

RC
2.2k

Q1
R1
470k
I1
10uA

VCC
10 V
2N2222

Figure 6.1: BJT test circuit used to find characteristics.

Part Two:
The DC sweep of the above circuit is shown below.

Figure 6.2: DC Transfer characteristic of the circuit shown in Figure 6.1.

EEE4308L Pre-Lab #6

Part Three:
NOTE: Due to technical difficulties with software, I was unable to plot the two graphs on one graph.
However, here is the load line separately.

Load Line
0.005

Current

0.004
0.003
0.002
0.001
0
0

10

12

Voltage

Figure 6.3: Load Line for circuit shown in Figure 6.1.

Part Four:
For the Q-point for IB=10A. Using both graphs and data points, one can observe the following values:
=
= .
= .
F =

1.3mA
10A

Calculating small-signal output resistance and early voltage.


ro =

7V 6V
1.3mA 1.27mA

= .
VA = ro IC + VCE = 2.7V
= .

EEE4308L Pre-Lab #6

Part Five:
From the above values, the small-signal BJT parameters can be found.
r =

25.8mV
10A

= .
gm =

F
r

= .

Part Six:
The self-biasing circuit (Figure 6.5 in handout) shown below, with all corresponding values:

R1
470k

RC
2.2k

Q1
V1
10 V
2N2222

Figure 6.4: Self-biasing circuit to be observed.


Calculations for table:
VBE = VB VE
VB = 0.7V (From Datasheet)
VBE = 0.7V 0V
= .
IB =

VCC VBE
RB

IB =

10V 0.7V
470k

EEE4308L Pre-Lab #6

=
IC = F IB
F 130 (From Datasheet)
IC = 130(20A)
= .
VCE = VCC R C IC
VCE = 10V (2.2k)(2.6mA)
= .

VBE (mV)

VBE (mV)

VCE (V)

VCE(V)

IB (uA)

IB (uA)

IC (mA)

IC (mA)

Transistor

2N2222

2N3904

2N2222

2N3904

2N2222 2N3904

2N222

2N3904

Calculated

700

Multisim

651

4.28
695

3.94

20.0
3.25

19.9

2.60
19.8

2.76

3.07

Figure 6.5: Table with corresponding values for the circuit in Figure 6.4.

Part Seven:
The changes seen in collector current and collector-emitter voltage can be attributed to a change in beta.
One transistor is an NPN and one a PNP, this as well as each transistor having a different value for beta
will cause this variance in results. Through simple calculation, the below results are found.
IC = 11.1%
VCE = 17.6%

EEE4308L Pre-Lab #6

Part Eight:
A self-biasing circuit with emitter resistance (Figure 6.6 in handout), with appropriate values:

R1
470k

RC
2.2k

Q1
V1
10 V
2N2222
RE
4.3k

Figure 6.6: Self-biasing circuit to be observed.

Calculations for table:


VBE = VB VE
VB = 0.7V (From Datasheet)
VBE = 0.7V 0V
= .
IB =

VCC VBE
R B + (1 + F )R E

IB =

10V 0.7V
470k + (130)(4.3k)

= .
IC = F IB
F 130 (From Datasheet)
IC = 130(9.0A)
= .
VCE = VCC R C IC R E IE
EEE4308L Pre-Lab #6

VCE = 10V (2.2k)(2.6mA) (4.3k)(1.18mA)


= .
VBE(mV)

VBE(mV)

VCE (V)

VCE (V)

IB (uA)

IB(uA)

IC(mA)

IC(mA)

Transistor

2N2222

2N3904

2N2222

2N3904

2N2222

2N3904

2N222

2N3904

Calculated

700

Multisim

630

2.36
670

9.0

2.72

2.11

1.17

9.65

8.73

1.12

1.21

Figure 6.7: Table with corresponding values for the circuit in Figure 6.6.

Part Nine:
The added emitter resistance changes the voltage significantly, while not changing the current by much.
The changes seen in collector current and collector-emitter voltage can be attributed to a change in beta.
One transistor is an NPN and one a PNP, this as well as each transistor having a different value for beta
will cause this variance in results. Through simple calculation, the below results are found.
IC = 7.5%
VCE = 28.9%

Part Ten:
A stabilized-biasing circuit (Figure 6.7 in handout), with appropriate values:

R1
470k

RC
2.2k

Q1
V1
10 V
2N2222
R2
390k

RE
4.3k

Figure 6.8: Stabilized-biasing circuit to be observed.


EEE4308L Pre-Lab #6

Calculations for table:


VBE = VB VE
VB = 0.7V (From Datasheet)
VBE = 0.7V 0V
= .
IB =

VTH VBE
R TH + (1 + F )R E

IB =

4.53V 0.7V
213k + (130)(4.3k)

= .
IC = F IB
F 130 (From Datasheet)
IC = 130(5.0A)
= .
VCE = VCC R C IC R E IE
VCE = 10V (2.2k)(0.65mA) (4.3k)(0.65mA)
= .

VBE(mV)

VBE(mV)

VCE(V)

VCE(V)

IB(uA)

IB(uA)

IC(mA)

IC(mA)

Transistor

2N2222

2N3904

2N2222

2N3904

2N2222

2N3904

2N222

2N3904

Calculated

700

Multisim

620

5.79
660

5.64

5.00
5.73

4.83

0.645
4.92

0.668

Figure 6.9: Table with corresponding values for the circuit in Figure 6.6.

EEE4308L Pre-Lab #6

0.654

Part Eleven:
The voltage division between resistors one and two cause the emitter and collector currents to be certain
values with respect to the voltage source, the only differences seen in this circuit in the collector and
emitter current and can be attributed to a change in beta. This makes the slight differences in results
attributed directly to the beta value. One transistor is an NPN and one a PNP, this as well as each
transistor having a different value for beta will cause this variance in results. Through simple calculation,
the below results are found.
IC = 2.1%
VCE = 1.6%

EEE4308L Pre-Lab #6