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TK10A60D
Unit: mm
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
VDGR
600
Gate-source voltage
VGSS
30
(Note 1)
ID
10
Pulse (t = 1 ms)
(Note 1)
IDP
40
PD
45
JEITA
EAS
363
mJ
TOSHIBA
Avalanche current
IAR
10
EAR
4.5
mJ
Channel temperature
Tch
150
Tstg
-55 to 150
DC
Drain current
1: Gate
2: Drain
3: Source
JEDEC
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Rth (ch-c)
2.78
C/W
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25C (initial), L = 6.36 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
2009-09-29
TK10A60D
www.DataSheet4U.com
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = 30 V, VDS = 0 V
IDSS
10
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
RDS (ON)
VGS = 10 V, ID = 5 A
0.62
0.75
Yfs
VDS = 10 V, ID = 5 A
1.5
6.0
Input capacitance
Ciss
1350
Crss
Output capacitance
Coss
135
VOUT
22
RL =
40
55
15
100
25
16
Rise time
Turn-on time
ton
50
Switching time
Fall time
ID = 5 A
10 V
VGS
0V
tr
tf
Turn-off time
VDD
200 V
Duty 1%, tw = 10 s
toff
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD
400 V, VGS = 10 V, ID = 10 A
pF
ns
nC
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
10
IDRP
40
IDR = 10 A, VGS = 0 V
1.7
(Note 1)
VDSF
trr
IDR = 10 A, VGS = 0 V,
1300
ns
Qrr
12
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K10A60D
2009-09-29
TK10A60D
www.DataSheet4U.com
ID VDS
ID VDS
10
20
COMMON SOURCE
10,8
(A)
PULSE TEST
6.25
4
5.5
2
COMMON SOURCE
10
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
6.5
Tc = 25C
7.5
16
Tc = 25C
PULSE TEST
6.75
12
6.5
6
5.5
VGS = 5 V
VGS = 4.5V
0
0
DRAIN-SOURCE VOLTAGE
0
0
10
VDS
(V)
10
20
ID VGS
VDS (V)
DRAIN-SOURCE VOLTAGE
(A)
DRAIN CURRENT ID
VDS = 20 V
PULSE TEST
12
Tc = 55C
100
25
0
0
GATE-SOURCE VOLTAGE
VGS
10
Tc = 25
PULSE TEST
ID = 10 A
2.5
(V)
16
VGS
20
(V)
RDS (ON) ID
10
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()
12
GATE-SOURCE VOLTAGE
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = 55C
25
100
0.1
1
(V)
COMMON SOURCE
Yfs ID
0.1
VDS
10
0
0
100
10
50
VDS VGS
COMMON SOURCE
40
DRAIN-SOURCE VOLTAGE
20
16
30
10
DRAIN CURRENT ID
Tc = 25C
PULSE TEST
0.1
0.1
100
(A)
COMMON SOURCE
VGS = 10 V15V
10
DRAIN CURRENT ID
100
(A)
2009-09-29
TK10A60D
www.DataSheet4U.com
RDS (ON) Tc
IDR VDS
100
COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( )
2.5
VGS = 10 V
2.0
PULSE TEST
1.5
ID=10A
5A
1.0
2.5A
0.5
0
80
40
40
80
CASE TEMPERATURE
120
Tc
COMMON SOURCE
Tc = 25C
PULSE TEST
10
1
10
5
0.1
0
160
(C)
3
VGS = 0, 1 V
1
0.2
0.6
0.4
0.8
DRAIN-SOURCE VOLTAGE
CAPACITANCE VDS
1.2
1.0
VDS
1.4
(V)
Vth Tc
10000
Coss
100
Crss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
DRAIN-SOURCE VOLTAGE
VDS
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
100
10
(V)
40
VDS (V)
DRAIN-SOURCE VOLTAGE
60
40
20
80
120
CASE TEMPERATURE
80
120
Tc
160
(C)
80
40
40
CASE TEMPERATURE
PD Tc
0
0
160
Tc
200
(C)
20
500
400
VDS
16
300
12
VDD = 100 V
400
200
Common source
200
VGS
Tc = 25C
100
0
0
20
Pulse test
10
ID= 10 A
0
40
30
Qg
(V)
VGS
1
0.1
GATE-SOURCE VOLTAGE
CAPACITANCE
1000
(pF)
Ciss
(nC)
2009-09-29
TK10A60D
www.DataSheet4U.com
rth tw
10
Duty
= 0.5
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
0.01
0.001
10
SINGLE PULSE
100
1m
Duty = t/T
Rth (ch-c) = 2.78C/W
10m
PULSE WIDTH
100m
10
tw (s)
EAS Tch
500
100
ID max (pulsed) *
1 ms *
DRAIN CURRENT ID
(A)
10
AVALANCHE ENERGY
EAS (mJ)
100 s *
ID max (continuous) *
1
DC operation
Tc = 25C
0.1
400
300
200
100
0
25
0.01
50
75
100
125
150
Tc = 25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
0.001 TEMPERATURE.
10
1
VDSS max
100
DRAIN-SOURCE VOLTAGE
15 V
1000
VDS
(V)
BVDSS
IAR
15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 6.36mH
VDS
WAVEFORM
AS =
1
B VDSS
L I2
B
V
VDSS
DD
2009-09-29
TK10A60D
www.DataSheet4U.com
2009-09-29