Anda di halaman 1dari 5

TSHG8200

Vishay Semiconductors

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES

Package type: leaded


Package form: T-1
Dimensions (in mm): 5
Peak wavelength: p = 830 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: = 10
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 18 MHz
Good spectral matching with CMOS cameras
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition

94 8389

DESCRIPTION
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.

in

APPLICATIONS
Infrared radiation source for operation with CMOS
cameras (illumination)
High speed IR data transmission
Smoke-automatic fire detectors

PRODUCT SUMMARY
COMPONENT

Ie (mW/sr)

(deg)

P (nm)

tr (ns)

180

10

830

20

TSHG8200

Note
Test conditions see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1

TSHG8200
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS


PARAMETER

TEST CONDITION

Reverse voltage
Forward current

SYMBOL

VALUE

UNIT

VR

IF

100

mA

Peak forward current

tp/T = 0.5, tp = 100 s

IFM

200

mA

Surge forward current

tp = 100 s

IFSM

PV

180

mW

Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient

Tj

100

Tamb

- 40 to + 85

Tstg

- 40 to + 100

t 5 s, 2 mm from case

Tsd

260

J-STD-051, leads 7 mm soldered


on PCB

RthJA

230

K/W

Note
Tamb = 25 C, unless otherwise specified
Document Number: 84755
Rev. 1.2, 02-Jul-09

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com
1

TSHG8200
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero

200

120

160

IF - Forward Current (mA)

PV - Power Dissipation (mW)

180

140
120

RthJA = 230 K/W

100
80
60
40

100
80
RthJA = 230 K/W
60
40
20

20
0

0
0

10

21142

20

30

40

50

60

70 80

90 100

Tamb - Ambient Temperature (C)

21143

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

10

20 30 40

50 60 70 80

90 100

Tamb - Ambient Temperature (C)

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS
PARAMETER

TEST CONDITION

SYMBOL

IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 s

Temperature coefficient of VF
Reverse current

Forward voltage

Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e

MIN.

TYP.

MAX.

VF

1.5

1.8

VF

2.3

IF = 1 mA

TKVF

- 1.8

VR = 5 V

IR

VR = 0 V, f = 1 MHz, E = 0

Cj

IF = 100 mA, tp = 20 ms

Ie

180

V
V
mV/K

10

360

mW/sr

125
120

UNIT

pF

IF = 1 A, tp = 100 s

Ie

1600

mW/sr

IF = 100 mA, tp = 20 ms

50

mW

IF = 100 mA

TKe

- 0.35

%/K

10

deg
nm

Angle of half intensity


Peak wavelength

IF = 100 mA

830

Spectral bandwidth

IF = 100 mA

40

nm

Temperature coefficient of p

IF = 100 mA

TKp

0.25

nm/K

Rise time

IF = 100 mA

tr

20

ns

Fall time

IF = 100 mA

tf

13

ns

IDC = 70 mA, IAC = 30 mA pp

fc

18

MHz

3.7

mm

Cut-off frequency
Virtual source diameter
Note
Tamb = 25 C, unless otherwise specified

www.vishay.com
2

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 84755


Rev. 1.2, 02-Jul-09

TSHG8200
High Speed Infrared Emitting Diode, Vishay Semiconductors
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified

1000

Tamb < 50 C

tP/T = 0.01

1000

Radiant Power (mW)

IF - Forward Current (mA)

0.02
0.05
0.1

10

e-

0.2

100

0.5
100
0.01

0.1
0.1

10

100

tP - Pulse Duration (ms)

16031

100

1.25

e, rel - Relative Radiant Power

1000

100
tP = 100 s
tP/T = 0.001
10

1.0

0.75

0.5

0.25

0
740

1
0
18873

1
3
2
VF - Forward Voltage (V)

900

800
- Wavelength (nm)

16972_1

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 7 - Relative Radiant Power vs. Wavelength

10

20

Ie rel - Relative Radiant Intensity

100

10

40
1.0
0.9

50

0.8

60
70

0.7

- Angular Displacement

30

1000
Ie - Radiant Intensity (mW/sr)

1000

Fig. 6 - Radiant Power vs. Forward Current

Fig. 3 - Pulse Forward Current vs. Pulse Duration

IF - Forward Current (mA)

10

IF - Forward Current (mA)

16971

80

0.1
1
16032

10

100

1000

IF - Forward Current (mA)

Fig. 5 - Radiant Intensity vs. Forward Current

Document Number: 84755


Rev. 1.2, 02-Jul-09

0.6

0.4

0.2

15989

Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com
3

TSHG8200
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters

R 2.49 (sphere)

< 0.7

(4.7)

7.7 0.15

35.5 0.55

8.7 0.3

5.8 0.15

Area not plane


5 0.15

1 min.

+ 0.2
0.6 - 0.1

+ 0.15
0.5 - 0.05

+ 0.15
0.5 - 0.05

technical drawings
according to DIN
specifications

2.54 nom.

6.544-5259.02-4
Issue: 8; 19.05.09
95 10917

www.vishay.com
4

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 84755


Rev. 1.2, 02-Jul-09

Legal Disclaimer Notice


Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000


Revision: 18-Jul-08

www.vishay.com
1