Vishay Siliconix
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.010 at VGS = - 10 V
- 15
- 12
VDS (V)
- 30
RoHS
COMPLIANT
TO-252
G
S
D
Top View
P-Channel MOSFET
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
20
TA = 25 C
TA = 100 C
TC = 25 C
TA = 25 C
- 15
ID
-8
IDM
- 100
IS
- 15
70
PD
TJ, Tstg
Unit
4b
- 55 to 150
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb
RthJA
30
Maximum Junction-to-Case
RthJC
1.8
Unit
C/W
Notes:
a. Calculated Rating for TA = 25 C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 board, t 10 s.
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SUD45P03-10
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 A
- 30
VGS(th)
- 1.0
IGSS
VDS = 0 V, VGS = 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
ID(on)
RDS(on)
- 3.0
100
VDS = - 30 V, VGS = 0 V
-1
- 50
VDS = - 5 V, VGS = - 10 V
- 50
- 20
VGS = - 10 V, ID = - 15 A
0.010
VGS = - 10 V, ID = - 15 A, TJ = 125 C
0.015
gfs
VDS = - 15 V, ID = - 15 A
nA
A
A
VGS = - 4.5 V, ID = - 15 A
Forward Transconductancea
0.018
20
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
Qg
Gate-Source Chargec
Qgs
6000
VGS = 0 V, VDS = - 25 V, f = 1 MHz
pF
1100
700
90
VDS = - 15 V, VGS = - 10 V, ID = - 45 A
150
nC
20
Gate-Drain Charge
Qgd
16
td(on)
15
25
375
550
100
200
140
250
Rise Timec
tr
td(off)
Fall Timec
VDD = - 15 V, RL = 0.33
ID - 45 A, VGEN = - 10 V, RG = 2.4
tf
ns
Pulsed Current
Diode Forward Voltage
100
VSD
IF = - 45 A, VGS = 0 V
1.0
1.5
trr
55
100
ns
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD45P03-10
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
250
VGS = 10, 9, 8, 7 V
80
200
I D - Drain Current (A)
6V
150
5V
100
4V
60
40
TC = 125 C
20
50
25 C
3V
- 55 C
0
0
0
10
Output Characteristics
Transfer Characteristics
0.05
80
60
R DS(on) - On-Resistance ()
g fs - Transconductance (S)
TC = - 55 C
25 C
125 C
40
20
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0.00
0
0
10
20
30
40
50
20
40
80
100
Transconductance
8000
20
VDS = 15 V
ID = 45 A
Ciss
6000
C - Capacitance (pF)
60
4000
Coss
2000
16
12
Crss
0
0
0
10
15
20
Capacitance
Document Number: 70766
S-81734-Rev. E, 04-Aug-08
25
30
30
60
90
120
Gate Charge
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SUD45P03-10
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
2.0
VGS = 10 V
ID = 45 A
I S - Source Current (A)
R DS(on) - On-Resistance
(Normalized)
1.6
1.2
0.8
TJ = 150 C
TJ = 25 C
10
0.4
0.0
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (C)
125
150
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1.5
20
500
16
100
THERMAL RATINGS
12
10, 100 s
Limited
by R DS(on)*
1 ms
10
10 ms
100 ms
1s
TA = 25 C
Single Pulse
DC
0
0
25
50
75
100
125
150
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
2
1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
500
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Package Information
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Vishay Siliconix
MILLIMETERS
A
C2
b2
D1
e1
E1
L4
b
L5
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
2.18
2.38
0.086
0.094
A1
0.127
0.005
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
5.97
6.22
0.235
0.245
D1
4.10
0.161
6.35
6.73
0.250
0.265
E1
4.32
0.170
9.40
10.41
0.370
0.410
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
1.02
0.040
L5
1.01
1.52
0.040
0.060
Revision: 03-Jun-13
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
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APPLICATION NOTE
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Vishay
Disclaimer
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Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
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including but not limited to the warranty expressed therein.
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Revision: 02-Oct-12