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PD - 94816

IRF4905PbF
Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175C Operating Temperature
 Fast Switching
 P-Channel
 Fully Avalanche Rated
 Lead-Free
Description

HEXFET Power MOSFET

VDSS = -55V
RDS(on) = 0.02

ID = -74A

Fifth Generation HEXFETs from International Rectifier


utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.

TO-220AB

Absolute Maximum Ratings


ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ -10V


Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw

-74
-52
-260
200
1.3
20
930
-38
20
-5.0
-55 to + 175

Units
A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )


10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

0.75

62

C/W

11/6/03

IRF4905PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage


Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
-55

-2.0
21

Typ.

-0.05

18
99
61
96

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

3400
1400
640

V(BR)DSS

IDSS
IGSS

Drain-to-Source Leakage Current

Max. Units
Conditions

V
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA
0.02

VGS = -10V, ID = -38A 


-4.0
V
VDS = VGS, ID = -250A

S
VDS = -25V, ID = -38A
-25
VDS = -55V, VGS = 0V
A
-250
VDS = -44V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
180
ID = -38A
32
nC
VDS = -44V
86
VGS = -10V, See Fig. 6 and 13 

VDD = -28V

ID = -38A
ns

RG = 2.5

RD = 0.72, See Fig. 10 


Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

pF
VDS = -25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics


IS
ISM

V SD
t rr
Q rr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
-74
showing the
A
G
integral reverse
-260
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -38A, VGS = 0V 
89 130
ns
TJ = 25C, IF = -38A
230 350
nC
di/dt = -100A/s 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

 ISD -38A, di/dt -270A/s, VDD V(BR)DSS,

 Starting TJ = 25C, L = 1.3mH

 Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

RG = 25, IAS = -38A. (See Figure 12)

TJ 175C

IRF4905PbF
1000

1000

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V

-ID , Drain-to-Source Current (A)

-ID , Drain-to-Source Current (A)

100

10

-4.5V

20s PULSE WIDTH


Tc = 25C
A

1
0.1

10

100

100

R DS(on) , Drain-to-Source On Resistance


(Normalized)

-ID , Drain-to-Source Current (A)

TJ = 25C
100

TJ = 175C

10

VDS = -25V
20s PULSE WIDTH
7

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

10

100

Fig 2. Typical Output Characteristics

2.0

-VDS , Drain-to-Source Voltage (V)

1000

20s PULSE WIDTH


TC = 175C

1
0.1

Fig 1. Typical Output Characteristics

-4.5V

10

-VDS , Drain-to-Source Voltage (V)

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP

TOP

10

I D = -64A

1.5

1.0

0.5

VGS = -10V

0.0
-60 -40 -20

20

40

60

80 100 120 140 160 180

TJ , Junction Temperature (C)

Fig 4. Normalized On-Resistance


Vs. Temperature

IRF4905PbF
7000

5000

-V GS , Gate-to-Source Voltage (V)

6000

C, Capacitance (pF)

20

V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd

Ciss

4000

Coss
3000

2000

Crss

1000

0
1

10

100

I D = -38A
VDS = -44V
VDS = -28V

16

12

FOR TEST CIRCUIT


SEE FIGURE 13

-VDS , Drain-to-Source Voltage (V)

80

120

160

200

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.


Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.


Drain-to-Source Voltage

1000

1000

OPERATION IN THIS AREA LIMITED


BY R DS(on)

-I D , Drain Current (A)

-ISD , Reverse Drain Current (A)

40

100

TJ = 175C
TJ = 25C
10

VGS = 0V

1
0.4

0.6

0.8

1.0

1.2

1.4

1.6

-VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage

1.8

100
100s

1ms
10
10ms

TC = 25C
TJ = 175C
Single Pulse

1
1

10

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

100

IRF4905PbF
80

RD

VDS

ID , Drain Current (A)

VGS
60

D.U.T.

RG

V DD

-10V
40

Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

20

td(on)

tr

t d(off)

tf

VGS

25

50

75

100

125

150

175

10%

TC , Case Temperature ( C)

Fig 9. Maximum Drain Current Vs.


Case Temperature

90%
VDS

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC)

D = 0.50

0.20
0.1

0.01
0.00001

0.10
PDM

0.05

t1
0.02
0.01

t2

SINGLE PULSE
(THERMAL RESPONSE)

0.0001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

D.U.T

RG

IAS
-20V

tp

VDD
A

DRIVER
0.01

15V

Fig 12a. Unclamped Inductive Test Circuit

E AS , Single Pulse Avalanche Energy (mJ)

IRF4905PbF
2500

TOP
BOTTOM

2000

1500

1000

500

0
25

I AS

ID
-16A
-27A
-38A

50

75

100

125

150

175

Starting TJ , Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms


Current Regulator
Same Type as D.U.T.

50K

QG

12V

-10V
QGS

.2F
.3F

QGD

D.U.T.

+VDS

VGS

VG

-3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

IRF4905PbF
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations


Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer


-


RG

dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

VGS

+
-

V DD

Reverse Polarity of D.U.T for P-Channel


Driver Gate Drive
P.W.

Period

D=

P.W.
Period

[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current

Body Diode Forward


Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[VDD]

Forward Drop

Inductor Curent
Ripple 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices


Fig 14. For P-Channel HEXFETS

[ ISD ]

IRF4905PbF

TO-220AB Package Outline


Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)

2.87 (.113)
2.62 (.103)

-B-

3.78 (.149)
3.54 (.139)

4.69 (.185)
4.20 (.165)

-A-

1.32 (.052)
1.22 (.048)

6.47 (.255)
6.10 (.240)

4
15.24 (.600)
14.84 (.584)

LEAD ASSIGNMENTS

1.15 (.045)
MIN
1

4- DRAIN

14.09 (.555)
13.47 (.530)

4- COLLECTOR

4.06 (.160)
3.55 (.140)

3X
3X

LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN

HEXFET

1.40 (.055)
1.15 (.045)

0.93 (.037)
0.69 (.027)

0.36 (.014)

3X
M

B A M

0.55 (.022)
0.46 (.018)

2.92 (.115)
2.64 (.104)

2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH

3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.


4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information


EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED O N WW 19, 1997
IN THE ASSEMBLY LINE "C"

Note: "P" in assembly line


position indicates "Lead-Free"

INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE

PART NUMBER

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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