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FDN342P

P-Channel 2.5V Specified PowerTrenchTM MOSFET


General Description

Features

This P-Channel 2.5V specified MOSFET is produced in


a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).

Applications
Load switch
Battery protection
Power management

-2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 V


RDS(ON) = 0.13 @ VGS = -2.5 V.

Rugged gate rating (12V).

High performance trench technology for extremely


low RDS(ON).

Enhanced power SuperSOTTM-3 (SOT-23).

S
TM

SuperSOT -3

Absolute Maximum Ratings


Symbol

TA = 25C unless otherwise noted

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

ID

Drain Current

12
-2

- Continuous

(Note 1a)

- Pulsed
PD

Power Dissipation for Single Operation

TJ, Tstg

-10
(Note 1a)

0.5

(Note 1b)

0.46

Operating and Storage Junction Temperature Range

-55 to +150

W
C

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

C/W

RJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

C/W

Package Outlines and Ordering Information


Device Marking

Device

Reel Size

Tape Width

Quantity

FDN342P

FDN342P

8mm

3000 units

1999 Fairchild Semiconductor Corporation

FDN342P Rev. B

FDN342P

August 1999

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 A

BVDSS
TJ
IDSS

Breakdown Voltage Temperature


Coefficient

ID = -250 A,Referenced to 25C

Zero Gate Voltage Drain Current

VDS = -16 V, VGS = 0 V

-1

IGSSF

Gate-Body Leakage Current,


Forward
Gate-Body Leakage Current,
Reverse

VGS = 12 V, VDS = 0 V

100

A
nA

VGS = -12 V, VDS = 0 V

-100

nA

IGSSR

On Characteristics

-20

V
-16

mV/C

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250 A

VGS(th)
TJ
RDS(on)

Gate Threshold Voltage


Temperature Coefficient

ID = -250 A,Referenced to 25C

Static Drain-Source
On-Resistance

0.062
0.086
0.099

ID(on)

On-State Drain Current

VGS = -4.5 V, ID = -2 A
VGS = -4.5 V, ID = -2 A,TJ=125C
VGS = -2.5 V, ID = -1.5 A
VGS = -4.5 V, VDS = -5 V

gFS

Forward Transconductance

VDS = -5 V, ID = -5 A

-0.6

-1.05

-1.5

V
mV/C

0.08
0.14
0.13

-5

A
7

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS = -10 V, VGS = 0 V


f = 1.0 MHz

635

pF

175

pF

75

pF

(Note 2)

VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6

20

VDS = -10 V, ID = -2 A
VGS = -4.5 V,

35

ns

16

ns

18

ns

19

32

ns

6.3

nC

1.5

nC

1.7

nC

Drain-Source Diode Characteristics and Maximum Ratings


IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward


Voltage

VGS = 0 V, IS = -0.42 A

(Note 2)

-0.7

-0.42

-1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 250C/W when mounted
on a 0.02 in2 pad of 2 oz. Cu.

b) 270C/W when mounted


on a mininum pad.

Scale 1 : 1 on letter size paper


2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

FDN342P Rev. B

FDN342P

Electrical Characteristics

FDN342P

Typical Characteristics
2
VGS = -4.5V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-ID, DRAIN-SOURCE CURRENT (A)

20
-4.0V
-3.5V
15
-3.0V
10
-2.5V
5
-2.0V

1.8
VGS = -2.5V
1.6
-3.0V
1.4
-3.5V
1.2

-4.0V
-4.5V

0
0

0.8

-VDS, DRAIN-SOURCE VOLTAGE (V)

12

16

20

- ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation


with Drain Current and Gate Voltage.
0.3

ID = -2.0A
VGS = -4.5V

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

1.6

1.4

1.2

0.8

ID = -1A

0.2

TA = 125oC

0.1

TA = 25oC

0.6
-50

-25

25

50

75

100

125

150

Figure 3. On-Resistance Variation


with Temperature.

Figure 4. On-Resistance Variation


with Gate-to-Source Voltage.
100

8
-IS, REVERSE DRAIN CURRENT (A)

25oC

TA = -55oC

VDS = -5V

-ID, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

125 C
6

VGS = 0V
10

TA = 125oC
25oC

-55oC
0.1
0.01
0.001
0.0001

0
0.4

1.4

2.4

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

3.4

0.2

0.4

0.6

0.8

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage


Variation with Source Current
and Temperature.

FDN342P Rev. B

(continued)

1000
VDS = -5V

ID = -2A

f = 1MHz
VGS = 0 V

-10V

800

-15V

CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

FDN342P

Typical Characteristics

CISS
600

400

200

COSS
CRSS

Qg, GATE CHARGE (nC)

10

15

20

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

100

20
SINGLE PULSE

POWER (W)

1ms
1

100ms
VGS = -4.5V
SINGLE PULSE
RJA = 270oC/W

0.1

TA=25 C
10ms

10s
DC

1s

12

TA = 25oC

0.01
0.1

10

100

0.0001

0.001

-VDS, DRAIN-SOURCE VOLTAGE (V)

0.01

0.1

10

100

1000

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum


Power Dissipation.

r(t), NORMALIZED EFFECTIVE

1
TRANSIENT THERMAL RESISTANCE

-ID, DRAIN CURRENT (A)

RDS(ON) LIMIT

10

RJA=270 C/W

16

0.5

D = 0.5

0.2
0.1
0.05
0.02
0.01

0.2

R JA (t) = r(t) * RJA


R JA = 270 C/W

0.1
0.05
0.02
0.01

P(pk)

t1

Single Pulse

t2

0.005

TJ - TA = P * RJA (t)

0.002

Duty Cycle, D = t1 /t2

0.001
0.0001

0.001

0.01

0.1

10

100

300

t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.


Transient themal response will change depending on the circuit board design.

FDN342P Rev. B

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC

ISOPLANAR
MICROWIRE
POP
PowerTrench
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
TinyLogic

UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.