STB46NF30

STB46NF30,
STP46NF30, STW46NF30
N-channel 300 V, 0.063 typ, 42 A, STripFET II Power MOSFET
in D2PAK, TO-220 and TO-247 packages
Datasheet production data
Features
TAB
TAB
Type
VDSS
RDS(on)
max
ID
Pw
STB46NF30
300 V
< 0.075
42 A
300 W
STP46NF30
300 V
< 0.075
42 A
300 W
STW46NF30
300 V
< 0.075
42 A
300 W
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
3
1
3
1
DPAK
TO-220
TO-247
Applications
Switching applications
Automotive
Figure 1.
Internal schematic diagram

D(2, TAB)
Description
These Power MOSFETs have been developed
using STMicroelectronics unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DCDC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
G(1)
S(3)
Table 1.
AM09016v1
Device summary
Order code
Marking
Package
Packaging
STB46NF30
46NF30
DPAK
Tape and reel
STP46NF30
46NF30
TO-220
Tube
STW46NF30
46NF30
To-247
Tube
September 2012
This is information on a product in full production.
Doc ID 018493 Rev 1
1/19
www.st.com
19
Contents
STB46NF30, STP46NF30, STW46NF30
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
Doc ID 018493 Rev 1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
300
VGS
Gate-source voltage
20
ID
Drain current (continuous) at TC = 25 C
42
ID
Drain current (continuous) at TC = 100 C
27
Drain current (pulsed)
168
Total dissipation at TC = 25 C
300
Derating factor
W/C
Peak diode recovery voltage slope
10
V/ns
-55 to 175
175
IDM
(1)
Ptot
dv/dt (2)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.

2. ISD 34 A, di/dt 200 A/s, VDD 80% V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
D2PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
30
Rthj-pcb
Thermal resistance junction-pcb max
30
TJ
Table 4.
Maximum lead temperature for soldering

purpose
EAS (2)
62.5
C/W
50
C/W
C/W
300
Avalanche characteristics
Symbol
IAR
0.5
Unit
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive (1)
26
Single pulse avalanche energy
290
mJ
1. Pulse width limited by Tjmax

2. Starting Tj = 25 C, ID = IAR, VDD = 50 V
Doc ID 018493 Rev 1
3/19
Electrical characteristics
(TCASE= 25 C unless otherwise specified)
Table 5.
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS =0
IDSS
Zero gate voltage

drain current (VGS = 0)
VDS = 300 V
VDS = 300 V, TC = 125 C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 A
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 17 A
Table 6.
Symbol
4/19
On/off states
Test conditions
Min.
Typ.
Max.
300
Unit
V
1
10
A
A
100
nA
0.063 0.075
Dynamic
Parameter
Test conditions
Min.
Typ.
3200
442
57
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time

Rise time
Turn-off delay time
Fall time
VDD = 150 V, ID = 17 A
RG = 4.7 VGS = 10 V
(see Figure 16)
25
38
80
46
Qg
Qgs
Qgd
Total gate charge

Gate-source charge
Gate-drain charge
VDD = 240 V, ID = 34 A,
VGS = 10 V
(see Figure 17)
90
16
40
Doc ID 018493 Rev 1
Max.
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 7.
Symbol
Source drain diode

Parameter
Test conditions
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
ISD = 34 A, VGS = 0
Min.
Typ.
Max.
Unit
34
136
A
A
1.6
ISD = 34 A,
Reverse recovery time
di/dt = 100 A/s,
Reverse recovery charge
VDD = 60 V
Reverse recovery current
(see Figure 18)
215
1.7
16
ns
nC
A
ISD = 34 A,
Reverse recovery time
di/dt = 100 A/s,
Reverse recovery charge
VDD = 60 V, Tj = 150 C
Reverse recovery current
(see Figure 18)
252
2.3
19
ns
nC
A
1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Doc ID 018493 Rev 1
5/19
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D2PAK and

TO-220
Figure 3.
Thermal impedance for D2PAK and

TO-220
Figure 5.
Thermal impedance for TO-247
Figure 7.
Transfer characteristics
AM03365v1
ID
(A)
Tj=175C
Tc=25C
Sinlge pulse
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
D
S(
on
)
10s
100s
1ms
10
10ms
0.1
0.1
10
Figure 4.
100
VDS(V)
Safe operating area for TO-247

AM03365v2
ID
(A)
10s
)
on
100s
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
10
1ms
10ms
Tj=175C
Tc=25C
Sinlge pulse
0.1
0.1
Figure 6.
10
100
VDS(V)
Output characteristics
AM03372v1
ID
(A)
VGS=10V
100
AM03375v1
ID
(A)
VDS = 20 V
100
6V
80
80
60
60
5V
40
40
20
20
4V
0
0
6/19
10
20
0
30 VDS(V)
Doc ID 018493 Rev 1
VGS(V)

Figure 8.
Normalized BVDSS vs temperature

AM03368v1
BVDSS
(norm)
1.15
ID = 1mA
Figure 9.
Static drain source on-resistance

AM03371v1
RDS(on)
()
VGS=10V
0.072
1.10
1.05
0.071
1.00
0.070
0.95
0.90
0.069
0.85
0.80
-50
50
100
150
TJ(C)
0.068
0
10
15
ID(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
AM03373v1
VGS
(V)
AM03374v1
C
(pF)
VDD=240V
ID=34A
12
Ciss
10
1000
8
6
Coss
100
4
Crss
2
0
0
20
40
60
80
10
Figure 12. Normalized gate threshold voltage

vs temperature
AM03367v1
VGS(th)
(norm)
10
100
VDS(V)
Figure 13. Normalized on resistance vs

temperature
AM03370v1
RDS(on)
(norm)
2.6
ID= 250 A
1.10
0.1
100 Qg(nC)
VGS= 10 V
ID= 17 A
2.2
1.00
0.90
1.8
0.80
1.4
0.70
1.0
0.60
0.6
0.50
0.40
0.2
-50
50
100
150
TJ(C)
Doc ID 018493 Rev 1
-50
50
100
150
TJ(C)
7/19
Figure 14. Source-drain diode forward

characteristics
Figure 15. Avalanche energy vs starting Tj

AM03369v1
VSD
(V)
Tj=-50C
1.0
0.9
0.8
Tj=25C
0.7
0.6
Tj=175C
0.5
0.4
0.3
0
8/19
10
15
20
25
30
ISD(A)
AM03366v1
EAS
(mJ)
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
Doc ID 018493 Rev 1
ID=26 A
VDD=50 V
20
40
60 80 100 120 140 160 TJ(C)
Test circuits
Test circuits
Figure 16. Switching times test circuit for

resistive load
Figure 17. Gate charge test circuit

VDD
12V
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load

Figure 19. Unclamped inductive load test
switching and diode recovery times
circuit
D.U.T.
FAST
DIODE
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
Figure 20. Unclamped inductive waveform
AM01471v1
Figure 21. Switching time waveform

ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
Doc ID 018493 Rev 1
10%
AM01473v1
9/19
Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
DPAK (TO-263) mechanical data

mm
Dim.
Min.
Max.
4.40
4.60
A1
0.03
0.23
0.70
0.93
b2
1.14
1.70
0.45
0.60
c2
1.23
1.36
8.95
9.35
D1
7.50
10
E1
8.50
10.40
2.54
e1
4.88
5.28
15
15.85
J1
2.49
2.69
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/19
Typ.
0.4
0
Doc ID 018493 Rev 1
Figure 22. DPAK (TO-263) drawing
0079457_T
Figure 23. DPAK footprint(a)

16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
Doc ID 018493 Rev 1
11/19
Table 9.
TO-220 type A mechanical data

mm
Dim.
Min.
Max.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
12/19
Typ.
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
Doc ID 018493 Rev 1
Figure 24. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 018493 Rev 1
13/19
Table 10.
TO-247 mechanical data

mm.
Dim.
Min.
Max.
4.85
5.15
A1
2.20
2.60
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
0.40
0.80
19.85
20.15
15.45
15.75
5.30
14.20
14.80
L1
3.70
4.30
L2
14/19
Typ.
5.45
5.60
18.50
3.55
3.65
4.50
5.50
5.30
Doc ID 018493 Rev 1
5.50
5.70
Figure 25. TO-247 drawing
0075325_G
Doc ID 018493 Rev 1
15/19
Packaging mechanical data

Table 11.
DPAK (TO-263) tape and reel mechanical data

Tape
Reel
mm
mm
Dim.
16/19
Dim.
Min.
Max.
Min.
A0
10.5
10.7
B0
15.7
15.9
1.5
1.5
1.6
12.8
D1
1.59
1.61
20.2
1.65
1.85
24.4
11.4
11.6
100
K0
4.8
5.0
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
50
0.25
0.35
23.7
24.3
Doc ID 018493 Rev 1
Max.
330
13.2
26.4
30.4
Figure 26. Tape

10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
E
F
W
K0
B0
A0
P1
D1
User direction of feed
Bending radius
User direction of feed
AM08852v2
Figure 27. Reel

T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 018493 Rev 1
17/19
Revision history
Revision history
Table 12.
18/19
Document revision history
Date
Revision
28-Sep-2012
Changes
First release.
Doc ID 018493 Rev 1
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STB46NF30,

Exceptional dv/dt capability

100% avalanche tested

Low gate charge

Internal schematic diagram

Tape and reel

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Electrical characteristics (curves)

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Absolute maximum ratings

Drain current (continuous) at TC = 25 C

Drain current (continuous) at TC = 100 C

Drain current (pulsed)

Peak diode recovery voltage slope

1. Pulse width limited by safe operating area.

D2PAK TO-220 TO-247

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Thermal resistance junction-pcb max

Maximum lead temperature for soldering

Avalanche current, repetitive or not repetitive (1)

Single pulse avalanche energy

1. Pulse width limited by Tjmax

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Zero gate voltage

Gate threshold voltage

VDS = VGS, ID = 250 A

Static drain-source onresistance

Turn-on delay time

Total gate charge

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Source drain diode

1. Pulse width limited by safe operating area.

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Electrical characteristics (curves)

Safe operating area for D2PAK and

Thermal impedance for D2PAK and

Thermal impedance for TO-247

Safe operating area for TO-247

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Normalized BVDSS vs temperature

Static drain source on-resistance

Figure 12. Normalized gate threshold voltage

Figure 13. Normalized on resistance vs

Doc ID 018493 Rev 1

STB46NF30, STP46NF30, STW46NF30

Figure 14. Source-drain diode forward

Figure 15. Avalanche energy vs starting Tj

Doc ID 018493 Rev 1

60 80 100 120 140 160 TJ(C)

STB46NF30, STP46NF30, STW46NF30

Figure 16. Switching times test circuit for

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load

Figure 20. Unclamped inductive waveform

Figure 21. Switching time waveform