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7/31/2015

Computer
An electronic device which is capable of
receiving information (data) in a particular form
and of performing a sequence of operations in
accordance with a predetermined but variable set
of procedural instructions (program) to produce a
result in the form of information or signals.

EE370
Digital Electronics
Yogesh S. Chauhan
Department of Electrical Engineering
IIT Kanpur
Email: chauhan@iitk.ac.in
Office: WL125, Phone: 7244

Minimize human efforts with speed and


efficiency.
Y. S. Chauhan, IIT Kanpur

Why Digital?

Digital System

Noise Margin Can be reduced to the limit we


want
Fidelity/Regeneration
Robustness
Scalability
Data Storage
Ease of data handling
Y. S. Chauhan, IIT Kanpur

Y. S. Chauhan, IIT Kanpur

7/31/2015

ENIAC - The first electronic computer


(1946)

The First Computer

17,468 vacuum
tubes
7200 crystal
diodes
1500 relays
70,000 resistors
10,000 capacitors
Weight > 27 Ton
1800 sq. ft.
150 kW of
electricity

The Babbage
Difference Engine
(1832)
25,000 parts
cost: 17,470
Y. S. Chauhan, IIT Kanpur

The Transistor Revolution

Y. S. Chauhan, IIT Kanpur

The First Integrated Circuits


Bipolar logic
1960s

ECL 3-input Gate


Motorola 1966

First transistor
Bell Labs, 1948
Y. S. Chauhan, IIT Kanpur

Y. S. Chauhan, IIT Kanpur

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Intel 4004 Micro-Processor

Intel Pentium (IV) microprocessor

1971
1000transistors
1MHzoperation

Y. S. Chauhan, IIT Kanpur

Moores Law

Y. S. Chauhan, IIT Kanpur

10

Transistor Counts

1975

1974

1973

1972

1971

1970

Y. S. Chauhan, IIT Kanpur

1969

1968

1967

1966

1965

1964

1963

1962

1961

1960

16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1959

LOG2 OF THE NUMBER OF


COMPONENTS PER INTEGRATED FUNCTION

In 1965, Gordon Moore noted that the number of


transistors on a chip doubled every 18 to 24 months.
He made a prediction that semiconductor technology
will double its effectiveness every 18 months

11

Y. S. Chauhan, IIT Kanpur

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Moores law in Microprocessors

Die Size Growth

1000

100

Transistors(MT)

100
10

P6
Pentium proc

486

Diesize(mm)

2Xgrowthin1.96years!

386
286

0.1
8086
8085
8080
8008
4004

0.01

0.001
1970

10
8080
8008
4004

1980

1990
Year

2000

1
1970

2010

TransistorsonLeadMicroprocessorsdoubleevery2years
Y. S. Chauhan, IIT Kanpur

8086
8085

286

386

P6
486 Pentiumproc

~7%growthperyear
~2Xgrowthin10years

1980

1990
Year

2000

2010

Diesizegrowsby14%tosatisfyMooresLaw
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Y. S. Chauhan, IIT Kanpur

Frequency

14

Power Dissipation
100
P6
Pentiumproc

10000

Frequency(Mhz)

1000
100

486
10

8085

1
0.1
1970

8086 286

Power(Watts)

Doublesevery
2years
P6
Pentiumproc

386

8086 286
1
4004

8080
8008
4004
1980

10

8008

486
386

8085
8080

0.1
1971
1990
Year

2000

1974

1978

1985

1992

2000

Year

2010

LeadMicroprocessorspowercontinuestoincrease

LeadMicroprocessorsfrequencydoublesevery2years
Y. S. Chauhan, IIT Kanpur

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Y. S. Chauhan, IIT Kanpur

Courtesy,Intel

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Power density

Power is a major problem


100000

1000
100

Rocket
Nozzle
Nuclear
Reactor

8086
10 4004
HotPlate
P6
Pentium proc
8008 8085
386
286
486
8080
1
1970
1980
1990
2000
Year

18KW
5KW
1.5KW
500W

10000
Power(Watts)

PowerDensity(W/cm2)

10000

1000
Pentium proc

100

286
486
8086 386
10
8085
8080
8008
1 4004
0.1
1971

2010

1974

1978 1985 1992


Year

2000 2004

2008

Powerdeliveryanddissipationwillbeprohibitive

Powerdensitytoohightokeepjunctionsatlowtemp
Y. S. Chauhan, IIT Kanpur

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Not Only Microprocessors

Y. S. Chauhan, IIT Kanpur

Challenges in Digital Design

Macroscopic Issues

Microscopic Problems
Small
SignalRF

18

Time-to-Market
Millions of Gates
High-Level Abstractions
Reuse & IP: Portability
Predictability
etc.

Ultra-high speed design


Interconnect
Noise, Crosstalk
Reliability, Manufacturability
Power Dissipation
Clock distribution.

Power
RF

Power
Management

Analog
Baseband

Everything Looks a Little Different

and Theres a Lot of Them!

DigitalBaseband
(DSP+MCU)

Y. S. Chauhan, IIT Kanpur

CellPhone

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Why Scaling?

Design Abstraction Levels


SYSTEM

Technology shrinks by 0.7/generation


With every generation can integrate 2X more
functions per chip; chip cost does not increase
significantly
Cost of a function decreases by 2x
But

MODULE
+
GATE

CIRCUIT

How to design chips with more and more functions?


Design engineering population does not double every
two years

DEVICE
G

Hence, a need for more efficient design methods

S
n+

Exploit different levels of abstraction


Y. S. Chauhan, IIT Kanpur

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Design Metrics

DesignAutomationisthekey.
Y. S. Chauhan, IIT Kanpur

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Cost of Integrated Circuits

How to evaluate performance of a digital


circuit (gate, block, )?

NRE (non-recurring engineering) costs


Design time and effort, mask generation
One-time cost factor

Cost
Reliability
Scalability
Speed (delay, operating frequency)
Power dissipation
Energy to perform a function
Y. S. Chauhan, IIT Kanpur

D
n+

Recurring costs
Silicon processing, packaging, test
proportional to volume
proportional to chip area

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Y. S. Chauhan, IIT Kanpur

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Cost of Integrated Circuits

NRE Cost is Increasing

Cost per IC = Variable cost per IC + (fixed


cost/volume)
The impact of fixed cost is more pronounced
for small volume products.

Y. S. Chauhan, IIT Kanpur

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Y. S. Chauhan, IIT Kanpur

Die Cost

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Cost per Transistor

Single die

cost:

-per-transistor

1
0.1

Fabrication capital cost per transistor (Moores law)

0.01
0.001

Wafer

0.0001
0.00001
0.000001

Going up to 12 (30cm)
From http://www.amd.com

Y. S. Chauhan, IIT Kanpur

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0.0000001
1982

1985

1988

1991

1994

1997

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2000

2003

2006

2009

2012

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Yield

Yield

No. of good chips per wafer


100%
Total number of chips per wafer
Wafer cost
Die cost
Dies per wafer Die yield

No. of good chips per wafer


100%
Total number of chips per wafer
Wafer cost
Die cost
Dies per wafer Die yield

Dies per wafer

wafer diameter/22 wafer diameter

die area
2 die area

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Defects

defects per unit area die area


die yield 1

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Some Examples (1994)

is approximately 3
die cost f (die area)4
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Y. S. Chauhan, IIT Kanpur

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Reliability
Noise in Digital Integrated Circuits

Example of Capacitive Coupling


Signal wire glitches as large as 80% of the supply voltage will be
common due to crosstalk between neighboring wires as feature sizes
continue to scale

Noise unwanted variations of voltages and


currents at the logic nodes

Crosstalkvs.Technology
v(t)

V DD

PulsedSignal
0.12mCMOS
0.16mCMOS

i(t)

Inductive coupling
Currentchangeonone
wirecaninfluencesignal
ontheneighboringwire

Capacitive coupling

Power and ground


noise
Voltagechangeonone
wirecaninfluencesignal
ontheneighboringwire
crosstalk
Y. S. Chauhan, IIT Kanpur

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Lets start Digital Electronics

Blacklinequiet
Redlinespulsed

0.25mCMOS

Glitchesstrengthvstechnology

0.35mCMOS

Y. S. Chauhan, IIT Kanpur

FromDunlop,Lucent,2000

34

Analog to Digital conversion

Digital Electronics uses binary number system


Logic 0 == Logic Low
Logic 1 == Logic High

Real world is not digital

Y. S. Chauhan, IIT Kanpur

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Y. S. Chauhan, IIT Kanpur

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Binary digital signal

Digital Logic Inverter


The logic inverter is the most basic element in digital circuit
design.
It plays a role parallel to that of the amplifier in analog
circuits.
Inverter inverts the logic value of its input signal.
Thus, for a logic-0 input, the output will be a logic 1, and vice
versa.

Y. S. Chauhan, IIT Kanpur

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Input-Output characteristics of an
Inverter

Y. S. Chauhan, IIT Kanpur

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Amplifier vs. Inverter

Lets draw.

Y. S. Chauhan, IIT Kanpur

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Y. S. Chauhan, IIT Kanpur

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DC Operation
Voltage Transfer Characteristic (VTC)
IsitInverter?

VIL Max. value


vI can have while
being interpreted
as logic 0.
VIH Min. value
vI can have while
being interpreted
as logic 1.

Noise Margins
Insensitivity of the inverter output to the
exact value of vI within allowed regions is a
great advantage that digital circuits have
over analog circuits.
Consider an inverter driving inverter.

Exactvalueofinputdoesntmatter.
Y. S. Chauhan, IIT Kanpur

41

Noise Margins

Y. S. Chauhan, IIT Kanpur

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Voltage Transfer Characteristic

Four parameters, VOH, VOL, VIH, and VIL, define the VTC of an
inverter and determine its noise margins

Switching Threshold Voltage

Changes in vI within the noise margins are rejected by the inverter.


Noise is not allowed to propagate further through the system, a definite
advantage of digital over analog circuits.

You can think of the inverter as restoring the signal levels to


standard values (VOL and VOH) even when it is presented with
corrupted input signal levels (within the noise margins).

Vout

OH

Vout=Vin

ImportantParametersoftheVTCoftheLogicInverter

VM SwitchingThreshold
V OL
V OL

Y. S. Chauhan, IIT Kanpur

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Y. S. Chauhan, IIT Kanpur

OH

Vin

NominalVoltageLevels

44

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Voltage Transfer Characteristic

Mapping between analog and digital signals


The regions of acceptable high and low voltages are delimited
by VIH and VIL that represent the points on the VTC curve
where the gain = -1

Switching Threshold Voltage (VM)


Output is short circuited with input.

Vout=f(Vin)

V(x)

V(y)

V(y)=V(x)

VM

V
0

Y. S. Chauhan, IIT Kanpur

VIH

V(x)

VDD

VDD

"1"

VOH
NMH = VOH - VIH
Noise Margin High
Noise Margin Low

Slope = -1

IL

V
OL

45

Noise Margins

"0"
Gnd
Gate Input

OL
Y. S. Chauhan, IIT Kanpur

IL

IH

in

46

The Regenerative Property


A gate with regenerative property ensure that a disturbed
signal converges back to a nominal voltage level
v0

VIH
Undefined
Region
VIL

NML = VIL - VOL

Gnd
Gate Output

Slope = -1
OH

Switching Threshold

For robust circuits, want the 0 and 1 intervals to be as


large as possible

VOL

out

Undefined
Region

VOL = f (VIH)
VIL

V
IH

VOH = f (VIL)

V
OH

v1

v2

v3

v4

v5

v6

v2

5
V (volts)

V(y)

v0

v1

1
-1

Large noise margins Y.are


desirable, but not sufficient 47
S. Chauhan, IIT Kanpur

t (nsec)
Y. S. Chauhan, IIT Kanpur

10
48

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Conditions for Regeneration


v0

v1

v2

v3

v4

v5

Noise Immunity

v6

Noise margin expresses the ability of a circuit to overpower


a noise source

v1 = f(v0) v1 = finv(v2)
out

out
v3

f(v)

noise sources: supply noise, cross talk, interference, offset

Absolute noise margin values are deceptive

finv(v)

a floating node is more easily disturbed than a node driven by a


low impedance (in terms of voltage)

v1
v3

v1
finv(v)

v2

in

v0

Regenerative Gate

Noise immunity expresses the ability of the system to


process and transmit information correctly in the presence
of noise

f(v)

v0

v2

in

Nonregenerative Gate

To be regenerative, the VTC must have a transient


region with a gain greater than 1 (in absolute value)
bordered by two valid zones where the gain is smaller
than 1. Such a gate has two stable operating points.
Y. S. Chauhan, IIT Kanpur

Transfer function between noise source and signal node is <<1.


For good noise immunity, the swing (VOH VOL) and noise
margin have to be large enough to overpower the impact of fixed
sources of noise

49

Directivity

Y. S. Chauhan, IIT Kanpur

50

Fan-in and Fan-out

A gate must be unidirectional: changes in an output


level should not appear at any unchanging input of the
same circuit
In real circuits full directivity is an illusion (e.g., due to
capacitive coupling between inputs and outputs)

Fan-out number of load gates


connected to the output of the driving
gate

Fan-in the number of inputs to


the gate
Gates with large fan-in are
bigger and slower

Gates with large fan-out are slower

Key metrics: output impedance of the driver and input


impedance of the receiver

ideally, the output impedance of the driver should be zero


input impedance of the receiver should be infinity

Y. S. Chauhan, IIT Kanpur

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Fan-out N

Y. S. Chauhan, IIT Kanpur

Fan-in M

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VTC of an ideal inverter

VTC of an ideal inverter


The ideal gate should have

V out

Infinite gain in the transition region


Switching threshold located in the middle of the logic swing
High and low noise margins equal to half the swing
Input and output impedances of infinity and zero, respectively

Ri =
Ro = 0
Fanout =
NMH = NML = VDD/2

g=

Y. S. Chauhan, IIT Kanpur

53

An Old-time Inverter
5.0
4.0
VOH

NM L

Vout (V)

3.0

VM
NM H

1.0
VOL
0.0

VOL 1.0
VIL

2.0

3.0
Vin (V)

VOH 4.0
V

IH Kanpur
Y. S. Chauhan, IIT

V in

54

Performance
VOH=3.5V
VIH=2.35V
VM=1.64V
NMH=1.15V

VOL=0.45V
VIL=0.66V
NML=0.21V

2.0

Y. S. Chauhan, IIT Kanpur

Note
Asymmetric
NML is low
Swing=3.05V
5.0
<VDD=5V
55

The performance of a digital circuit expresses the computational


load that the circuit can manage.
A microprocessor is characterized by the number of instructions it can
execute per second. This performance metric depends on
Architecture of the processor - for instance, the number of instructions it can
execute in parallel &
Actual design of logic circuitry.

When focusing on the pure design, performance is most often


expressed by the duration of the clock period or clock frequency.
The minimum value of the clock period for a given technology and
design is set by a number of factors such as
Time it takes for the signals to propagate through the logic
Time it takes to get the data in and out of the registers
Uncertainty of the clock arrival times.

Y. S. Chauhan, IIT Kanpur

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Delay Definitions
Vin

How fast we can toggle?

Vout

Vin

Vout

tpLH and tpHL can be asymmetric

Vin
Propagationdelay
input
waveform

50%

tp =(tpHL +tpLH)/2

tpHL

Time period T> max(tpLH, tpHL)x2


If symmetric, T> max(tp)x2
Duty cycle

tpLH

Vout
90%

output
waveform

10%

tf

time for which it is ON/ (Time period)


Usually its 50%: Rise and fall should occur within T/2 time

signalslopes

50%

Y. S. Chauhan, IIT Kanpur

tr

57

Y. S. Chauhan, IIT Kanpur

How to compare delay in different


technologies?

Modeling Propagation Delay

RingOscillator

Model circuit as first-order RC network


vout (t) = (1 et/)V

V
0
v0

v1

v2

v3

v4

v5

v1

Y. S. Chauhan, IIT Kanpur

Time to reach 50% point is

vin

v5

T = 2 tp N

where = RC

vout
C

v0

58

N=numberofinverters
59

Y. S. Chauhan, IIT Kanpur

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Modeling Propagation Delay

Modeling Propagation Delay

Model circuit as first-order RC network


vout (t) = (1 et/)V

V
0

Model circuit as first-order RC network

R
vout
C

vout (t) = (1 et/)V

V
0

where = RC
Time to reach 90% from 10% point is

vin

where = RC

vout
C
vin

Time to reach 50% point is


t = ln(2) = 0.69
Time to reach 90% from 10% point is
t = ln(9) = 2.2

Matches the delay of an inverter gate


Y. S. Chauhan, IIT Kanpur

61

Power and Energy Dissipation

Y. S. Chauhan, IIT Kanpur

62

Static and Dynamic power

Power consumption: how much energy is consumed per


operation and how much heat the circuit dissipates
Supply line sizing (determined by peak power)
Ppeak = Vdd.ipeak=max(p(t))
Battery lifetime (determined by average power dissipation)
.

Two important components: static and dynamic


Static power dissipation:
Caused by static conductive paths between the supply rails or by
leakage currents.
Always present, even when the circuit is in stand-by.
Minimization of this consumption source is a worthwhile goal.

Dynamic power dissipation:

Occurs only during transients, when the gate is switching.


Charging of capacitors & temporary current paths between supply rails.

Proportional to the switching frequency: the higher the number


of switching events, the higher the dynamic power consumption.

Packaging and cooling requirements

Y. S. Chauhan, IIT Kanpur

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A First-Order RC Network
R

vin

A First-Order RC Network
R

vout
vin

CL

Energydissipated V(t)=VDD
fromsource
T
E
= P t dt
01
0

vout
CL

Energydissipated
Vdd
fromsource
T
T
E 0 1 = P t dt = V dd i sup ply t dt = Vdd CL dV out = C L V dd 2

0
0
0
Energytransferred
tocapacitor
T
T
Vdd
1
2
E
= P
t dt = V
i
t
= C V
dV
= --- C V
dd
ca p
cap
out ca p dt
L out out
2 L
0
0
0

Energytransferred
tocapacitor
T V(t)=Vout
E
= P
t dt
ca p
cap
0
Y. S. Chauhan, IIT Kanpur

65

Energy and Power

Y. S. Chauhan, IIT Kanpur

Whereisotherhalf?

66

Energy and Energy-Delay


Propagation delay and power consumption of a gate are related
Propagation delay is mostly determined by the speed at which a given
amount of energy can be stored on the gate capacitors.
The faster the energy transfer (or the higher the power consumption),
the faster the gate.

E (joules) = CL Vdd2 P01 + tsc Vdd Ipeak P01 + Vdd Ileakage

Product of power consumption and propagation delay is generally a


constant for a given technology and gate topology.

Power-Delay Product (PDP) =

f01 = P01 * fclock


P (watts) = CL Vdd2 f01 + tscVdd Ipeak f01 + Vdd Ileakage

E = Energy per operation = Pav tp

An ideal gate is one that is fast, and consumes little energy.

The energy-delay product is a combined metric that brings those two


elements together, and is often used as the ultimate quality metric.

Energy-Delay Product (EDP) =

Y. S. Chauhan, IIT Kanpur

67

quality metric
of gate = E tp
Y. S. Chauhan, IIT Kanpur

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Analog vs. Digital


Analog

Analog vs. Digital

Digital

Analog

Digital

1. Computewithcontinuousvaluesof
physicalvariablesinsomerange

Computewithdiscretevaluesofphysical
variables

4.

Noiseisduetothermalfluctuationsin
physicaldevices.

2.

Primitivesofcomputationarisefromthe
physicsofthecomputingdevices:
physicalrelationsoftransistors,
capacitors,resistors,floatinggate
devices,Kirchoffs currentandvoltage
lawsandsoforth.Theuseofthese
primitivesisanartformanddoesnot
lenditselfeasilytoautomation. The
amountofcomputationsqueezedoutof
asingletransistorishigh.

Primitivesofcomputationarisefromthe
mathematicsofBooleanlogic:logicalrelations
likeAND,OR,NOT,NAND,andXOR.Theuseof
theseprimitivesisascienceandlendsitself
easilytoautomation.Thetransistorisusedas
aswitch,andtheamountofcomputation
squeezedoutofasingletransistorislow.

5.

Signalisnotrestoredateachstageofthe Signalisrestoredto1or0ateachstageof
computation.
thecomputation.

6.

Inacascadeofanalogstages,noise
startstoaccumulate.Thus,complex
systemswithmanystagesaredifficultto
build.

Roundofferrordoesnotaccumulate
significantlyformanycomputations.Thus,
complexsystemswithmanystagesareeasy
tobuild.

7.

Staticpowerdissipation
PA=N.VDD.I

Static powerisduetoleakagecurrentsonly.

8.

Littleornodynamicpowerdissipation

DynamicpowerconsumptionPD=N.f.C.VDD2

Computationisoffsetpronesinceitis
sensitivetomismatchesinthe
parametersofthephysicaldevices.The
degradationinperformanceisgraceful.

Computationisnotoffsetpronesinceitis
insensitivetomismatchesintheparameters
ofthephysicaldevices.However,asinglebit
errorcanresultincatastrophicfailure.

3.

Y. S. Chauhan, IIT Kanpur

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Y. S. Chauhan, IIT Kanpur

Inside chip

70

Acknowledgement

Y. S. Chauhan, IIT Kanpur

Noiseisduetoroundofferror.

71

Jan M. Rabaey book


Irwin & Vijays slides, Penn State University
Sedra and Smith book
S.S.K. Iyer, IIT Kanpur
Course TAs

Y. S. Chauhan, IIT Kanpur

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