ASSIGNMENT NO. 1
COMPILED BY:
CABUDSAN, SARAH FATIMA C.
1st Semester, 2014-2015
SUBJECT INSTRUCTOR:
ENGR. KATRINA ACAPULCO
AUGUST 1, 2014
PNP transistors because the electron mobility is larger than the hole
mobility. BJTs are almost exclusively of the NPN type since high
performance is BJTs competitive edge over MOSFETs.
A bipolar junction transistor is formed by joining three sections of
semiconductors with alternatively different doping.
Physical structure of BJT:
Both electrons and holes participate in the conduction process for
bipolar devices.
It consists of two PN junctions constructed in a special way and
connected in series, back to back.
The transistors have 3-terminal devices with emitter, base and
collector terminals.
BJTs divided into two groups: NPN and PNP transistors.
Modes of operation:
http://aries.ucsd.edu/NAJMABADI/CLASS/ECE65/06-W/NOTES/BJT1.pdf
http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch8.pdf
http://cc.ee.ntu.edu.tw/~lhlu/eecourses/Electronics1/Electronics_Ch4.pdf