in
resources
for
conventional
power
library,
have
to
be
Matlab.
computed
The
equivalent
from
data
circuit
sheet
and
Henceforth, to
Simulink
model.
This
model
allows
incorporation
of
MPPT
I.
INTRODUCTION
MATHEMATICAL MODELING
OF
TWO-DIODE PV CELL
68
2014 IEEE International Conference on Advanced Communication Control and Computing Technologies (lCACCCT)
generated current (lph), two diodes with diode currents (ld\,
1d2), Series Resistance (Rs), Shunt Resistance (Rp), output
voltage (V) and PV current (I or Ipv).
Fig. I.
Where,
Rp
III.
Solar Cell
I'
[(
V + Rsxl
Nl xV,
J] [ (
-1 -Is2 e
V + Rsxl
N2xV,
1.602
2
lO- 3
J/K,
Isl,Is2 =
D 2.
10
1,000 (VV/rn2) _
::
3
'-'
8
7
6
5
4
2
1
N], N2
10 . 1 9 C,
Ns =
(3)
-1
Rp
where,
IV.
J]
V+RsxIpv
charge on electron
SIMELECTRONICS
Ipv=Iph-isl e
V=
(1)
(2)
Equation (2) is the elementary PV cell model which does
not represent the practical I-V characteristics of the PV cell.
Practical PV module comprises of different elements that need
to be added into the elementary (2) such as Rs, Rp. The output
current of PV cell (2) is rewritten as (3)
q=
p
(4)
In order to simulate the PV cell behavior similar to the
practical PV cell the unknown parameters in (3) i.e., R., Rp are
calculated by iteration [10 ]. The computed values of Rs and Rp
are used to make the maximum point of the P-V curve
simulated to coincide with the maximum point of the practical
P-V curve of the PV module taken from datasheet. This can be
achieved by iteratively increasing the values of Rs and
simultaneously calculating the value of Rp. Computation of the
iterative values will terminate when the calculated power
P max,C using these values equals the reference maximum power
P max, 0 taken from the datasheet.
Fig. 2.
V +Rs xl
800
(VV/rn2)
/'
(vVXn2)----0" ____
10
20
L
/'
./'
/'
vs.
250
J.---.
r--\--"-
:>
"'\\
,
b
\
f',.'\. \
--
voltage
240
220
200
180
150
100
140
120
80
50
1"-...\\1
,,\1
40
20
"u,
o
30
40
Curure ..... 1!: vs. v o- I "t: age
P c> ""'-er-
V'S
vc::>lt.;;t.ge
Fig. 3. I-V and P-V characteristics of Sharp NU-E245 (15) from data sheet
69
2014 IEEE International Conference on Advanced Communication Control and Computing Technologies (lCACCCT)
TABLE T.
245 W
30.5 V
8.04 A
8.73 A
37.5 V
+0. 053%/'C
-130mV/'C
-0.485
k
:r=----
==---d
u
VOLTAGE IV)
o/oI'c
47.5C
160
140
120
100
;:Q
?
..:s
Two-diode model
ofPV cell in
Simulink
Two-diode
model ofPV
cell in
Simulink,
Simscaoe
Electrical
Parameters
Manufacturer
Data-sheet
Voc
37.5 V
37.5 V
36.0 V
Isc
8.73 A
8.729 A
8.73 A
Pmax
245 W
245.06 W
245.09 W
Vmpp
30.5 V
30.75 V
30.05 V
Impp
8.04 A
7.97 A
8.15 A
VOLTAGE (V)
Fig. 8.
Fig. 6.
70
2014 IEEE International Conference on Advanced Communication Control and Computing Technologies (lCACCCT)
maximum power point (MPP) and generates the gate signal of
IGBT to boost up the output voltage to the required level.
Thus the two different models of PV cell discussed in section
II and III is implemented with MPPT controller and analyzed.
A.
f--
m
oc
oc
::J
U
80
60
40
20
W
0 V\
f-
...J
-200
!
!
i
0.1
0.2
0.3
O.4Tlme 0.5
0.6
,,
0.7
0.8
0.9
,-
i
"
' . . . . ]i . .. . .. "j'"
.
ij . . . .. + . . . "
"
"
rI
': r
:j llti!r
g:oo
j,
. ............i ............
j,
............... 1
i
i
. !"
!..
0.7
12o
'00
a::
8o
60
0
4
... .
..
LC, AD PO W ER t\'V I
. .
. .. ......... . .. . ........ . .
powe
. ., .............. 1....
. .. ... ....... . ..
\.
""
0.1
B.
0.9
,
,
0.2
0.3
O.4Tlme 0.5
0.6
0.7
0.8
0.9
71
2014 IEEE International Conference on Advanced Communication Control and Computing Technologies (lCACCCT)
>oo
c::::
250
200
1O
. . .. .L
.....1..
REFERENCES
[I]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
CONCLUSION
72