Code.

No: 11106
NR SET-1
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
SEMICONDUCTOR DEVICES AND CIRCUITS
(Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
---

1.a) Define current density. Derive an expression for current density.

b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

2.a) How does doping modify the conductivity of semiconductor?

b) Explain the forward bias condition of a p-n junction diode and give its current equation.
[8+8]

3.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.

b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

4.a) Derive an expression for the stability factor S of a BJT amplifier.

b) A transistor connected in CE configuration has the following h-parameter,
hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
AI , Ri and AV of the amplifier. [8+8]

5.a) What are the general characteristics of a negative feedback amplifier? Explain how
feedback amplifiers are classified.
b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
[8+8]

6. Explain the functioning of a complementary Push Pull amplifier and derive the
expression for efficiency and power output for the same. [16]

7.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
off frequencies.
b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
frequency of oscillations. [8+8]

8. Write a brief note on

a) Grain band width product.
b) UJT V-I characteristics. [16]

--o0o--
Code.No: 11106
NR SET-2
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
SEMICONDUCTOR DEVICES AND CIRCUITS
(Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
---

1.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.

b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

2.a) Derive an expression for the stability factor S of a BJT amplifier.

b) A transistor connected in CE configuration has the following h-parameter,
hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
AI , Ri and AV of the amplifier. [8+8]

3.a) What are the general characteristics of a negative feedback amplifier? Explain how
feedback amplifiers are classified.
b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
[8+8]

4. Explain the functioning of a complementary Push Pull amplifier and derive the
expression for efficiency and power output for the same. [16]

5.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
off frequencies.
b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
frequency of oscillations. [8+8]

6. Write a brief note on

a) Grain band width product.
b) UJT V-I characteristics. [16]

7.a) Define current density. Derive an expression for current density.

b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

8.a) How does doping modify the conductivity of semiconductor?

b) Explain the forward bias condition of a p-n junction diode and give its current equation.
[8+8]

--o0o--
Code.No: 11106
NR SET-3
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
SEMICONDUCTOR DEVICES AND CIRCUITS
(Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
---

1.a) What are the general characteristics of a negative feedback amplifier? Explain how
feedback amplifiers are classified.
b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
[8+8]

2. Explain the functioning of a complementary Push Pull amplifier and derive the
expression for efficiency and power output for the same. [16]

3.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
off frequencies.
b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
frequency of oscillations. [8+8]

4. Write a brief note on

a) Grain band width product.
b) UJT V-I characteristics. [16]

5.a) Define current density. Derive an expression for current density.

b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

6.a) How does doping modify the conductivity of semiconductor?

b) Explain the forward bias condition of a p-n junction diode and give its current equation.
[8+8]

7.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.

b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

8.a) Derive an expression for the stability factor S of a BJT amplifier.

b) A transistor connected in CE configuration has the following h-parameter,
hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
AI , Ri and AV of the amplifier. [8+8]

--o0o--
Code.No: 11106
NR SET-4
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
SEMICONDUCTOR DEVICES AND CIRCUITS
(Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
---

1.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
off frequencies.
b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
frequency of oscillations. [8+8]

2. Write a brief note on

a) Grain band width product.
b) UJT V-I characteristics. [16]

3.a) Define current density. Derive an expression for current density.

b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

4.a) How does doping modify the conductivity of semiconductor?

b) Explain the forward bias condition of a p-n junction diode and give its current equation.
[8+8]

5.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.

b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

6.a) Derive an expression for the stability factor S of a BJT amplifier.

b) A transistor connected in CE configuration has the following h-parameter,
hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
AI , Ri and AV of the amplifier. [8+8]

7.a) What are the general characteristics of a negative feedback amplifier? Explain how
feedback amplifiers are classified.
b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
[8+8]

8. Explain the functioning of a complementary Push Pull amplifier and derive the
expression for efficiency and power output for the same. [16]

--o0o--