(2)WhatdrivesthedecisiontouseIIIV(GaNandGaAs)compoundsoversiliconforwafers?Quora
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Semiconductors:Whatdrivesthedecisiontouse
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RichardGeorge
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Speed(GaAs)orpowerhandling(GaN).GaAshashigherelectronmobility
thansilicon,thereforewhenelectronmobilityisthekeyfactorinperformance,
GaAscanbebetterthansilicon.LikewisethebandgapofGaN~x3islarger
thanthatofsiliconpowerhandlinggoeswiththebandgapsquared,sofor
highpowerdevices,GaNoffersmorecapabilityperdevicethantheequivalent
transistormanufacturedusingsilicon....alsoGaAsandGaNarebothdirect
bandgapmaterialswhichmeantheycanefficientlycovertelectricityintolight
youcanmakeinfraredLEDsusingGaAsandblueLEDswithGaN.
GaAshasalowerelectroneffectivemassthansilicon,whichmeansthat
quantumeffectsaremorepronouncedingalliumarsenidecomparedtosilicon
quantumwelltechnologyispracticalandmatureinepitaxiallygrown
GaAs/AlGaAswafers,whilstsilicon/silicongermaniumislackingthismaturity.
TheGunneffectisdependentonthevalleystructureoftheGaAsconduction
band,whilstthereisn'tanequivalenteffectfoundinsilicon,somicrowave
GunndiodesaretypicallymadeonGaAswafers
Written17Oct,2013
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SushmitMallik,EngineeratIntel|DevicePhysics/Optics/Circuits
1kViews
Prettymucheverythinghasbeenmentioned.Iwouldliketomentionaboutthe
intrinsiccarrierdensityofGaAs,whichisabout4ordersofmagnitudelower
thanthatofSi.Howdoesthishelp?
Well,intrinsiccarriersarelikeobstaclestoyourminoritycarrierswhichisthe
signalcarrier.So,GaAsgivesamuchbetterSignaltoNoiseRatio.
Written6Apr,2014
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DanielFishman
260Views
From$$perspectivethereisnosubstituteforSiwafernotfor300mmandof
coursenotfor450mm.Thefuture(andasitlooksnowfarfuture)isIII/V
semiconductoronSiwafers,depositedinactiveregionsonly.
Thiscombinestheabilityforlargeareaproduction(450mm)onwellknownSi
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(2)WhatdrivesthedecisiontouseIIIV(GaNandGaAs)compoundsoversiliconforwafers?Quora
waferswithhighspeed(duetoIII/V)devices.
Therearemanytechnologicalproblemstosolvebeforethiscanbehighvolume
productiongrowingGaNorGaAsonSiisnotstraightforward,theGate
compositionandstructureshouldberebuildfornewmaterialsetc.
Written24Dec,2012
Upvote
JeffGruszynski
192Views
MostlynicheperformanceadvantagedeterminethechoiceofIIIVorother
compoundsemiconductor.Whensiliconcan'tstandin,thentheeconomics
allowIIIVtoplay.CurrentlyALLcompoundsemiconductor(whichincludes
allIIIV,allIIVIandIVIVsemiconductors)amountto1%ofworldwide
semiconductorproduction.Obviouslytherearestrongreasonstopickthe
defaultinyourcanmostlyrelatedtocosts.
Therearenumeroustechnical,economicandhistoricreasonsforthis.Usually
it'srelatedtospeed,electroopticcapabilityormorerecently,voltagehandling.
TechnologieslikeGaNMOSFETsareabletohavehighervoltageratings
thanconventionalsiliconMOSFETsorBJTs.Highervoltageisessential
forgreaterefficiencyinswitchingpowerconverterswhichareutterly
criticaltorenewableandportableelectricalenergy
Thenext"technologyfix"forMoore'sLawafterthecurrentsolutions
(FinFETandFDSOI)arelikelytobe"highmu"or"highmobility"channels
whichinvolveetchingchanneltrenchesanddepositingIIIV
semiconductorsintothechanneltrenchundertheMOSFETgate.This
couldbediceyhoweverbecauseofcostFinFETshavealready"brokenthe
Moore'sLawcostcurve"andthiswouldonlybefarworse.
CertainRF/WapplicationsarefacilitatedbyGaAs/AlGaAssuchas
HEMTandHBTdevicetechnologies.Leadingedgefrequency
performancestilltendstobethesetechnologieswhichcanonlybe
implementedincompoundsemiconductor.Aclosecousinofsilicon,SiGe,
canbeusedanditis"morecompatible"withsiliconthanmostIIIV.
LEDtechnologiesarecriticalforenergyconsumptionandrenewable
energyadoptionbecauseoftheirhighefficiency.AllAppleandprobably
mostothercompany'sLCDdisplaysare"backlit"byLEDsnow.Muchof
Asiahasalreadylongabandonedincandescentbulbsforlightingandare
intheprocessofobsoletingCFLsnow.Byvolume,LEDswillprobablybe
thedominantIIIVsemiconductorproductfordecadestocome.
Written8Apr,2014
Upvote
AshishKumarYadav,ResearchScholarIITIndore
80Views
1.Directbandgap,whichisnecessaryforoptoelectronicsapplication.
2.LargebandgapofGaN(3.43eV).
3.HighmobilityofchargecarriercanbeachievedinGaAsandGaN.
4.AsHighmobilityofCarrier,Highfrequencyapplicationcanbeachieved
usingGaNandGaAs.
5.Highbandgap.hightemperatureapplicationofGaNispossible.
Written27Mar
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