Apaji Institute of Mathematics and Applied Computer Technology

Department of Electronics
Course Handout 2013-14
Class: M.Ttech I Sem

Contact Hours: 51 hours

Course Title: IC fabrication Technology

Maximum Marks: 20(CA) + 40(sem)

Scope & Objective : This course is dealing with the introduction to the study
semiconductor physics with Silicon VLSI technology. The intended of this course is to
provide the basic knowledge of fabrication of ICs with conventional and current trend in
IC manyufacturing world. It also gives the idea of student to think about in advancement
of fabrication technology
Text Books:

T1. S.M Sze, VLSI technology, Tata Mc Graw Hill (2nd Edition)
Reference books (Practice books):

1. Gandhi S.K VLSI Fabrication principles, John Willey

2. Plummer J., Deal M., Griffin P., Silicon VLSI Technology, Prentics Hall
3. Stephen A. Campbell The Science and Engineering of Microelectronics
Fabrication
Evaluation Scheme: Continuous Assessment: 20 Marks

Final Assessment: 60 Marks

Continuous Assessment (CA):

S.No
.
1

Component

Duration

MM

Date

Syllabus

1 hour

Weightage
of CA
20%

Periodical 1

10

As per schedule

Section A

2
3

Assignment 1
Periodical 2

1 week
1 hour

20%
20%

10
10

1st week of sep

As per Schedule

Section A
Section A & B

4
5

Assignment 2
Attendance

1 week
-

20%
20%

10
10

2nd week of Nov

-

Section C
-

Course Plan:

No. of
Lectures
1-3

Topics to be covered

Books

Section A
Semiconductor basics and material properties, Crystal
structures,Orientation effects

R1

4-6

Crystal Growth technique: The Czochralski and Zone

process,Wafer Preparation

T1,R2

7-9

Processing Consideration, Chemical Wafer Cleaning,

Gettering and Thermal Stress factor

T1,R2

10-13

Epitaxy- Vapour Phase Epitaxy, Basic Transport Process and

Reaction Kinetics, Doping and Auto doping, Equipments and

T1,R2

Safety Consideration,Concept of Buried Layers,Epitaxial

defects
14-16

Molecular Beam Epitaxy: Equipment,

T1,R1

17-19

Silicon On Insulator, Silicon-On-sapphire, Film

Characteristics

R1

20-24

25-30

31-34

Section B
Oxidation- Growth mechanism and Kinetics,Silicon Oxidation
model,Interference Consideration,Orientation dependence of
oxidation rates,Effect of Impurities on oxidation rates, Pre
oxidation cleaning procedure,Dry and Wet Oxidation, Plasma
Oxidation,Pre oxidation cleaning procedure
Lithography- Optical lithography, Optical Resist, contact and
Proximity Printing,Projection Printing, E-Beam
Lithography:Electron Resist, Mask Generation,Electron
optics,Raster Scan and Vector Scan, Variable beam shape, XRay lithography: Resist and Proximity printing, X-Ray source
and masks ; Ion Lithography
Section C
Etching- Reactive Plasma etching: AC and DC plasma
excitation, Plasma properties, Plasma chemistry and surface
interaction, Features size Control and anisotropic etching,
Pattern transfer, Ion enhanced and ion induced etching,
Properties of etch process

T1,R2

T1,R3

T1,R1,R2

35-38

Reactive Plasma Etching techniques: Reactive Ion

Etching(RIE), Reactive Ion Beam Etching (RIBE),
Effect of Plasma Parameters, Specific Etch
Process:Poly Si /Polycide, trench etching, SiO2
,and Si3N4

T1,R1,R2

39-42

Diffusion- Ficks ID Diffusion Equation, Constant

diffusivities, Concentrationn and Temperature dependence of
diffusivity, Atomic Diffusion Mechanism, Diffusivities of
B,P,As and Sb: Electric Fields effect, Band Gap narrowing
effect, High Concentration Effect

T1,R2

43-45

Measurements techniques:Junction Depth and

Sheet Resistance, Profile measurement, Diffusion
in SiO2

T1

46-48

Ion Implantation Range Theory: Ion Stopping, Range

Distribution, Idea of Damage, Channeling and Recoils,
Implantatiion equipment, Annealing and sintering;
Metallization and Patterning

T1,R2

49-51

Fabrication steps of NMOS, PMOS, CMOS(n&p well), BJT

Note: T 1and R1 Means text and reference book.

T1