DEPARTMRNT OF EEE
OBJECTIVE QUESTIONS
Class : II B.Tech-I Sem
Name of the faculty: M.Chiranjeevi, ECE Dept.
Subject Name: Electronic Devices And Circuits (13A04301)
UNIT-I
1. Zener diodes are primarily used as
a) Amplifiers
d) oscillators
2. The random motion of holes and free electrons due to thermal agitation is called [
a) Diffusion
b) pressure
c) ionization
b) bidirectional switch
c) uni-directional switch
d) None
b) majority carriers
c) Junction capacitance
d) None
d) None
b) positively charged
c) Electrically neutral
d) None
b) 6V
c) 5.1V
b) aluminum
c) germanium
b) 0.32eV
c) 0.72eV
d) gallium
d) 5V
d) all
3. A PN junction acts as a
a) Controlled switch
d) 0.92eV
c) Both a and b
b) 0.482
c) 0.406
b)2Vm
c) Vm/2
b) 81.2%
c) 1.12%
b) 2 Vm
c) Vm/2
b) 2Vm
c) Vm/2
b) varactor diode
c) zener diode
d) GUNN diode
b) 3
c) 4
c) buses
d) exhibitions
d) 8
a) Cars
d) 3Vm
d) 3Vm
d) 48.2%
d) 3Vm
d) 0.121
UNIT-II
1. A collector collects
b) germanium
c) either Si or Ge
d) None
3. In most transistors, the collector region is made physically larger than the
emitter region
a) For dissipating heat
b) to distinguish it from other regions
c) As it is sensitive to UV rays
d) to reduce resistance in the path of flow of electrons
4. In a transistor the region that is very lightly doped and very thin is the___
a) Emitter
b) base
c) collector
d) None
5. In an NPN transistor when the emitter junction is forward biased and the collector junction
is reverse biased, the transistor will operate in ___
a) Active region
b) saturation region
c) cutoff region
d) inverted region
b) in base
c) in collector
d) through emitter
9. Base to emitter voltage VBE is forward biased transistor decreases with increase of
temperature at ___mv/ c
a) 0.6
b) 2.5
c) 0.25
d) 25
b) 1.5v
c) 0.6V
d) 0.2v
b) 0.1 micro
c) 100 pico
d) 1 pico
b) 10M
c) 1M
d) 0.1M
d) None
b) UJT
c) BJT
b) gm = rd -
c) gm X rd =
d) JFET
d) gm = rd /
18.) The amplification factor of FET is 40 and drain resistance is 10Kohm and load
resistance is 10k ohm. The voltage gain is ____
a) -4
b)-20
c) 40
d)-40
19. The gate to source capacitance in small signal high frequency model of JFET
is of order of _____PF
a)5
b)0.5
c)50
d)0.05
b)FET
c)UJT
d)SCR
UNIT - III
1. The operating point variation is due to
a) ICO
b) VBE
c)
b) 1-
c)/1-
b) sensistor
c) resistor
c) few milli amps
b) no output
c) no distortion
b) saturation region
]
]
d) no input signal
[
d) None
d) both a and b
[
d) 1/ 1-
d) all
c) self bias
d) None
8. The power transistors the heat developed at the the collector junction may be
Removed by the use of
a) Heat sink
b) 1-
c) /1-
d) 1/ 1-
UNIT-IV
b) 100ms
c) 1s
b)1M
d) 100s
c)100
d) 1000
3. The feedback capacitance in small signal high frequency model of JFET is of order of[ ]
a)5pf
b)500pf
c) 5000pf
d) 50pf
c) Independent of Vds
d) increases
5. Input resistance of common source amplifier in its low frequency small signal
operation is____
a) infinity
b) app infinity
c) zero
d) None
6. In low frequency common source amplifier the resistance is connected between source
and ground to provide______
b) gm = gm0*vp
c) gm= gm0/ vp
d) gm= gm0(1-VGS/VP)
8. The rate of change of drain current with gate voltage VGS keeping VDS constant is
called
9) The rate of change of drain voltage with drain current iD keeping VGS constant is
called
11. What is the phase difference between input and output signal in CE amplifier [
a)+1
a)0
b) -1
b)45
c) / (-1)
c)180
d) / (+1)
d)90
b) >1
c) =1
b) CB and CE
d)None
c) CE and CB
d) CC and CE
[
a) CE
b) CC
c) CB
d) None
b) CB
c)CC
b) class B
c) class C
b) CB
c) CC
b) CB
c) CC
b) CB
c) CC
b) CB
c) CC
d) None
20. The BJT amplifier which is having the highest output resistance is____
a)CE
d) None
d) None
[
d) class D
d) Cascade
d) None
UNIT - V
1. The frequency limit of Tunnel diode is
a) 104Hz
b) 108Hz
c) 1Hz
d) 0.1Hz
d) Tunnel diode
b) POWER diode
c) JENPACT diode
d) None
c) both a and b
d) only a
c) 0.5 to 2.0
d) None
b) low power
b) 0.5 to 10
b) 20
c) 50
d) 100
b) 5 to 20
c) 2 to 10
d) 1 to 1000
b) Si
c) Ge and Si
d) None
b) 0.7
c) 1.5
d) 8
12. In a Varactor diode using alloy junction, the transition capacitance is proportional to______
13. The Varactor diode is usually _______biased
14. The doping densities required in Tunnel diode is of the order of ________
15. The Minimum current needed to hold the switch in its ON state is called ________
16. Varactor diodes are also called as _________
17. UJT is usually operated with emitter junction _______ biased
18. SCR is _______ directional device
19. ________is having negative temperature coefficient
20. Application of tunnel diode is as _____________
21.The minimum forward current that must be maintained to keep the SCR in the conducting
state is called -----------------------22.-----------------------is the minimum current obtained by the device before gate drive is
removed .
23.The symbol of tunnel diode is ----------------------24. The symbol of varactor diode is ----------------------25. The symbol of SCR is ----------------------26. The symbol of UJT is ----------------------27.Examples for negative resistance devices----------------------------------28.Forward conduction states in SCR is----------------------------29.Reverse blocking state in SCR is-------------------------30.Dark current occurs in --------------------diode.