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KSC815

KSC815
Low Frequency Amplifier & High Frequency
Oscillator
Collector-Base Voltage : VCBO=60V
Complement to KSA539
Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor


Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter

Value
60

Units
V

VCEO
VEBO

Collector-Emitter Voltage

45

Emitter-Base Voltage

IC

Collector Current

200

mA

PC

Collector Power Dissipation

400

mW

TJ

Junction Temperature

150

TSTG

Storage Temperature

-55 ~ 150

Electrical Characteristics Ta=25C unless otherwise noted


Symbol
BVCBO

Parameter
Collector-Base Breakdown Voltage

Test Condition
IC=100A, IE=0

Min.
60

BVCEO

Collector-Emitter Breakdown Voltage

IC=10mA, IB=0

45

BVEBO

Emitter-Base Breakdown Voltage

IE=10A, IC=0

ICBO

Collector Cut-off Current

VCB=45V, IE=0

Typ.

Max.

Units
V
V
V

0.1

0.1

IEBO

Emitter Cut-off Current

VEB=3V, IC=0

hFE

DC Current Gain

VCE=1V, IC=50mA

40

VBE (on)

Base-Emitter On Voltage

VCE=10V, IC=10mA

0.6

0.65

0.9

VCE (sat)

Collector-Emitter Saturation Voltage

IC=150mA, IB=15mA

0.15

0.4

VBE (sat)

Base-Emitter Saturation Voltage

IC=150mA, IB=15mA

0.83

1.1

fT

Current Gain Bandwidth Product

VCE=10V, IC=10mA

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

100

400
V

200

MHz

pF

hFE Classification
Classification

hFE

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

KSC815

Typical Characteristics

100

10000

IB = 300A

80

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

VCE=1V

IB = 350A

90

70
60

IB = 250A

50

IB = 200A
IB = 150A

40
30

IB = 100A

20

1000

100

IB = 50A

10

10

0
0

10

15

20

25

30

35

40

45

50

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

1000

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

100

10

VCE=1V

IC=10IB

IC[mA], COLLECTOR CURRENT

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100

VBE(sat)

0.1

VCE(sat)

10

0.1
0.0

0.01
1

10

100

f = 1MHz
IE=0

Cob[pF], CAPACITANCE

10

1
100

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

2002 Fairchild Semiconductor Corporation

0.6

0.8

1.0

1.2

Figure 4. Base-Emitter On Voltage

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

Figure 3. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

10

0.4

VBE[V], BASE-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

0.2

1000

VCE=10V

100

10
1

10

IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

Rev. A2, September 2002

KSC815

Package Dimensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

1.27TYP
[1.27 0.20]
0.20

(0.25)

+0.10

0.38 0.05

1.02 0.10

3.86MAX

3.60

+0.10

0.38 0.05

(R2.29)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
FACT
ActiveArray
FACT Quiet series
Bottomless
FAST
FASTr
CoolFET
CROSSVOLT FRFET
GlobalOptoisolator
DOME
EcoSPARK
GTO
E2CMOS
HiSeC
EnSigna
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR

PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation

Rev. I1