Outline

Channel Length Modulation

PMOS
Role of Substrate
Temperature Effects

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Recap
NMOS Operation in
Cut off ,Linear and Saturation mode
Related Equations

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MOSFET

When VGS=0 V and VDS =1 V

When VGS=0 V and VDS =3 V

When VGS=2 V and VDS =0 V

When VGS=2 V and VDS =1 V

When VGS=5 V and VDS =0 V

When VGS=5 V and VDS =1 V

When VGS=10 V and VDS =10 V

Effect of Channel Length

Modulation

Effect of Channel Length

Modulation

Linear/Triode Region
MOS transistor can be modelled as linear resistor
r whose value is controlled by v
DS

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DS

13

Large Signal equivalent Model (saturation)

Since the drain current independent of drain voltage, ,the

saturated mosfet behaves as ideal current source whose value
is controlled by vGS

 and L
The effect of channel-length
length modulation is less for a longlong
channel MOSFET than for a short-channel
short
MOSFET.

iD - vDS Characterstics (Channel Length Modulation)

Effect of L on channel length Modulation

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iD - vDS Characterstics (Channel Length Modulation)

Chapter 4
MOS field-Effect
Effect Transistors (MOSFETs)
Modelling
Channel
Length Modulation
Figre 4.17

NMOS Transistor

Conduction characteristics for nMOS

transistor
Enhancement - mode
Devices are cutoff with zero gate bias voltage
Apply
Apply +ve voltage to gate to make channel

Depletion - mode
G

Devices conduct with zero gate bias voltage

Channel exists. Apply -ve
ve voltage to turn off

Conduction characteristics for nMOS

transistor

D
G

n
S

(assuming
fixed Vds)
Depletion - mode
Enhancement - mode
Devices are cutoff with zero gate bias voltage
Apply +ve voltage to gate to make channel

Devices conduct with zero gate bias

voltage
channel exists. Apply -ve voltage to
turn off

PMOS Transistor

Chapter 4

MOS field-Effect
Effect Transistors (MOSFETs)

PMOS Transistor - Symbolic Representation

Figure 4.18

Conduction characteristics for

pMOS transistor

(assuming fixed Vds)

HomeWork
Voltage and Current Equations for PMOS in
Linear and Saturation mode

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Role of substrate
In many applications the source terminal is connected to
the substrate terminal B which results in the PN junction
between the substrate and the induced channel having
zero (cutoff) bias

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Role of substrate
The reverse bias voltage will widen the depletion region
.This in turn reduces the channel depth

To return to its former state -------has to be increased

VGS
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Role of substrate
The effect of V on the channel can be most
convinently represented as a change in the
threshold voltage Vt
SB

Vto - threshold voltage for VSB = 0

- Fabrication process
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Role of substrate

If V changes then there is incremental change in

V , which in turn results in incremental change in i
even though v is constant
SB

GS

The body (substrate ) controls i thus the body acts

as another gate for the MOSFET , a phenomenon
known as Body Effect
D

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Temperature Effects

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EEE C424/ECE C313

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Temperature Effects

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EEE C424/ECE C313

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Breakdown and input Protection

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EEE C424/ECE C313

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Chapter 4

MOS field-Effect
Effect Transistors (MOSFETs)
Figure 4.9

CMOS Transistor