Si7958DP

Vishay Siliconix

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)
40

RDS(on) ()

ID (A)

0.0165 at VGS = 10 V

11.3

0.020 at VGS = 4.5 V

10.3

Halogen-free According to IEC 61249-2-21

Available
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package
Dual MOSFET for Space Savings

PowerPAK SO-8

S1

6.15 mm

D1

5.15 mm

D2

G1

S2

G2

4
D1

G1

D1

G2

D2

D2

Bottom View
Ordering Information: Si7958DP-T1-E3 (Lead (Pb)-free)
Si7958DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S1

S2
N-Channel MOSFET

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Parameter
Drain-Source Voltage
Gate-Source Voltage

Symbol
VDS
VGS

Continuous Drain Current (TJ = 150 C)a

TA = 25 C
TA = 70 C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation

L = 0.1 mH
TA = 25 C
TA = 70 C

ID
IDM
IS
IAS
EAS
PD
TJ, Tstg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)b, c

10 s

11.3
9.0
2.9

3.5
2.2

Steady State
40
20
7.2
5.8
40
1.2
35
61
1.4
0.9
- 55 to 150
260

Unit
V

mJ
W
C

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)

Symbol
t 10 s
Steady State
Steady State

RthJA
RthJC

Typical
26
60
2.2

Maximum
35
85
2.7

Unit
C/W

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72661

S09-0223-Rev. C, 09-Feb-09

www.vishay.com
1

Si7958DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter

Symbol

Test Conditions

Min.
1

Typ.

Max.

Unit

Static
VGS(th)

VDS = VGS, ID = 250 A

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

100

nA

IDSS

VDS = 40 V, VGS = 0 V

Zero Gate Voltage Drain Current

VDS = 40 V, VGS = 0 V, TJ = 55 C

On-State Drain Currenta

ID(on)

Gate Threshold Voltage

Drain-Source On-State Resistancea

Forward Transconductancea
Diode Forward Voltagea

VDS 5 V, VGS = 10 V

30

VGS = 10 V, ID = 11.3 A

0.013

0.0165

VGS = 4.5 V, ID = 10.3 A

0.016

0.020

gfs

VDS = 15 V, ID = 11.3 A

30

VSD

IS = 2.9 A, VGS = 0 V

0.8

1.2

50

75

VDS = 20 V, VGS = 10 V, ID = 11.3 A

8.8

RDS(on)

S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time

f = 1 MHz

17

tr

Turn-Off Delay Time

td(off)

Fall Time

tf

Source-Drain Reverse Recovery Time

trr

1.9

td(on)

Rise Time

nC

10.4
30

VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 6

17

30

66

100

17

30

IF = 2.9 A, dI/dt = 100 A/s

31

60

ns

Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

40

40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)

ID - Drain Current (A)

30

24

16

20

TC = 125 C
10

8
25 C

3V

- 55 C

0
0

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2

0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

3.5

4.0

Document Number: 72661

S09-0223-Rev. C, 09-Feb-09

Si7958DP
Vishay Siliconix
TYPICAL CHARACTERISTICS

25 C, unless otherwise noted

4000

0.030

3500
3000
C - Capacitance (pF)

RDS(on) - On-Resistance ()

0.025

0.020
VGS = 4.5 V
0.015
VGS = 10 V

0.010

Ciss

2500
2000
1500
1000

0.005

Coss

0.000
0.0

8.0

16.0

24.0

32.0

40.0

ID - Drain Current (A)

16

40

1.8
VDS = 20 V
ID = 11.3 A

VGS - Gate-to-Source Voltage (V)

32

Capacitance

10

VGS = 10 V
ID = 11.3 A

1.6

1.4
(Normalized)

RDS(on) - On-Resistance

1.2

1.0

0.8

0.6

0
0

10

20

30

40

50

50

25

25

50

75

100

125

Qg - Total Gate Charge (nC)

TJ - Junction Temperature (C)

Gate Charge

On-Resistance vs. Junction Temperature

150

0.05

RDS(on) - On-Resistance ()

40

I S - Source Current (A)

24

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

TJ = 150 C
10

TJ = 25 C

1
0.0

Crss

500

0.04
ID = 11.3 A
0.03

0.02

0.01

0.00
0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72661

S09-0223-Rev. C, 09-Feb-09

10

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3

Si7958DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100

0.4
0.2

80
ID = 250 A

- 0.2

Power (W)

V GS(th) (V)

0.0

- 0.4
- 0.6

60

40

- 0.8
20
- 1.0
- 1.2
- 50

- 25

25

50

75

100

125

0
0.001

150

0.01

0.1

10

TJ - Temperature (C)

Time (s)

Threshold Voltage

Single Pulse Power

100

600

100
IDM Limited

ID - Drain Current (A)

Limited by RDS(on)*

100 s
10
1 ms
1

10 ms

ID(on)
Limited

100 ms

0.1

1s

TA = 25 C
Single Pulse

10 s
DC
BVDSS Limited

0.01
0.1

10

100

VDS - Drain-to-Source Voltage (V)

* V GS > minimum V GS at which R DS(on) is specified

Safe Operating Area, Junction-to-Ambient

2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1
PDM

0.1
0.05

t1
t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = R thJA = 60 C/W

0.02

3. T JM - TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
10-4

10-3

10-2

10-1
1
Square Wave Pulse Duration (s)

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

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Document Number: 72661

S09-0223-Rev. C, 09-Feb-09

Si7958DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse

0.01

10-4

10-3

10-2

10-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72661.

Document Number: 72661

S09-0223-Rev. C, 09-Feb-09

www.vishay.com
5

Package Information
www.vishay.com

Vishay Siliconix

PowerPAK SO-8, (Single/Dual)

L

E2

K
E4

D4

Z
2
D5

D2

2
D1
D

2
D

3
4

L1
E3

A1

Backside View of Single Pad

H
K
E2
E4

1
D1
D5

D2

Detail Z

K1

2
E1
E

D3 (2x) D4

3
4

Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.

E3
Backside View of Dual Pad

MILLIMETERS
DIM.

MIN.

A
0.97
A1
b
0.33
c
0.23
D
5.05
D1
4.80
D2
3.56
D3
1.32
D4
D5
E
6.05
E1
5.79
E2 (for AL product)
3.30
E2 (for other product)
3.48
E3
3.68
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
0.56
H
0.51
L
0.51
L1
0.06

0
W
0.15
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13

D2

INCHES

NOM.

MAX.

MIN.

NOM.

MAX.

1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.

1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68

0.038
0
0.013
0.009
0.199
0.189
0.140
0.052

0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066

6.25
5.99
3.66
3.84
3.91

0.238
0.228
0.130
0.137
0.145

0.71
0.71
0.20
12
0.36

0.022
0.020
0.020
0.002
0
0.006

0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.

0.246
0.236
0.144
0.151
0.154

0.028
0.028
0.008
12
0.014

Document Number: 71655

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR PowerPAK SO-8 Dual

0.260
(6.61)
0.150
(3.81)

0.174

0.024
(0.61)

0.050

0.032

0.040

(1.27)

(0.82)

(1.02)

(4.42)

0.065

(1.65)

0.065

(1.65)

0.154

(1.27)

0.050

0.026
(0.66)

(3.91)

0.024
(0.61)

Recommended Minimum Pads

Dimensions in Inches/(mm)
Return to Index

APPLICATION NOTE

Return to Index

www.vishay.com
16

Document Number: 72600

Revision: 21-Jan-08

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 02-Oct-12

Document Number: 91000