GaAs Hall Element

HG-302C
Shipped in bulk500pcs per pack
Notice : It is requested to read and accept "IMPORTANT NOTICE"
written on the back of the front cover of this catalogue.

Absolute Maximum Ratings

Limit

Unit

Max. Input Voltage

VC

10

Max.Input Power

PD

150

mW

40 125

Operating Temp. Range Topr.

Dimensional Drawing(Unit : mm)

2.70.1

Min.

Max.

VH

B=50mT, Vc=6V

55

130

75

mV

Input Resistance

Rin

B=0mT,c=0.1mA

650

750

850

Output Resistance Rout B=0mT,c=0.1mA

650

750

850

+11

mV

-0.06

%/

0.3

%/

Vos(Vu) B=0mT, Vc=6V

11

N
0.57

0.38

Unit

Output Hall Voltage

Offset Voltage

0.25
1.0

Typ.

0.5

0.3

0.2
0.8

Conditions

15.01.0

Symbol

0.53
Marking

Electrical Characteristics(Ta=25)
Item

sensor
center
1.45 0.9

40 150

2.350.1

Tstg.

0.4

0.3

Pinning

2 3 4

1.0 1.0 1.0

Temp. Coefficient of VH

VH

B=50mT,c=5mA
Ta=25125

B=0mT,c=0.1mA
Temp. Coefficient of Rin Rin
Ta=25125

Linearity

B=0.1/0.5T,c=5mA

0
0.1

Storage Temp. Range

0.95

10

Input

Output

10

Symbol

Item

Notes : 1. VH = VHM Vos(Vu) (VHM:meter indication)

1
2) VH (T1)
X 100
2. VH = VH (T1) X VH (T
(T2 T1)
1
Rin (T2) Rin (T1)
X 100
3. Rin = Rin (T1) X
(T T )
2

Characteristic Curves
Allowable Package Power Dissipation

K (B1) K (B2)
4. K = [K (B1) + K (B2)] / 2 X 100

200

T1 = 25C, T2 = 125C
K=

VH
IC B

160

PD [mW]

B1 = 0.5T, B2 = 0.1T

120

80

40

20

40

60

80

100

Ambient Temperature:Ta []

62

120

140

HG-302C
Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
Handling precautions required for preventing electrostatic discharge.
This product contains galium arsenideGaAs.Handling and discarding precautions required.

Characteristic Curves

VH-B

Rin-T

1000

600
Output Hall Voltage:VH [mV]

Input Resistance:Rin []

Ic const
800

600

400

200

500

Vc const
lc =10 [mA]
Vc = 6 [V]
Ta =25 []

400
300
200

50

100

0
0

150

200
100
Magnetic Flux Density:B [mT]

Ambient Temperature:Ta []

Vc const

Output Hall Voltage:VHmV

Output Hall Voltage:VHmV

Ic const

Ic10mA
Vc6V
B50mT

Ic const
Ic
80
Vc
60
40
20
0
50

100

Vc const

80

B 50mT
Ta25

Ic
40
20
0

50

100

Vc

60

150

10

Input Current:IcmA
Input Voltage:VcV

Ambient Temperature.Ta

Vos(Vu)-Vc, Vos(Vu)-IcFor reference only

Vos(Vu)-TFor reference only

8

15

Ic const

Offset Voltage:Vos [mV]

7
Offset Voltage:Vos [mV]

300

120

120
100

Vc

100

0
50

VH-T

Ic

6
5
4
3
2
Ic

Vc const
B = 0 [mT]
Ta = 25 []

10

Vc
5

Ic

1
0
-50

Vc
0

50

100

0
150

Ambient Temperature:Ta []

Magnetic Flux Density

1[mT]=10 [G]

k
0

4
6
Input Current:Ic [mA]
Input Voltage:Vc [V]

10

In This Example : Rin=750, Vos=4.6mV, [Vc=6V]

63