HI-SINCERITY

Spec. No. : HA200213

Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 1/4

MICROELECTRONICS CORP.

HMJE13001
NPN Triple Diffused Planar Type High Voltage Transistor

Description
The HMJE13001 is a medium power transistor designed for use in switching
applications.
TO-92

Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed

Absolute Maximum Ratings

Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 C
Junction Temperature .................................................................................................................................... +150 C
Maximum Power Dissipation
Total Power Dissipation (TA=25C) ...................................................................................................................... 1 W
Total Power Dissipation (TC=25C) .................................................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current (DC)................................................................................................................................ 300 mA
IC Collector Current (Pulse)............................................................................................................................ 600 mA
IB Base Current (DC)........................................................................................................................................ 40 mA
IB Base Current (Pulse).................................................................................................................................. 100 mA

Electrical Characteristics (TA=25C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

600

IC=100uA

BVCEO

400

IC=10mA

BVEBO

IE=10uA

ICBO

10

uA

VCB=550V

ICEO

10

uA

VCB=400V

IEBO

10

uA

VEB=6V

*VCE(sat)1

400

mV

IC=50mA, IB=10mA

*VCE(sat)2

750

mV

IC=100mA, IB=20mA

*VBE(sat)

IC=50mA, IB=10mA

*hFE1

VCE=10V, IC=10mA

*hFE2

10

36

VCE=10V, IC=50mA
*Pulse Test: Pulse Width 380us, Duty Cycle2%

HMJE13001

HSMC Product Specification

HI-SINCERITY

Spec. No. : HA200213

Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 2/4

MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current

Saturation Voltage & Collector Current

100

100000
VCE(sat) @ IC=5IB

75 C
o

Saturation Voltage (mV)

125 C

hFE

25 C
10

10000

1000

75 C
o

125 C
100

25 C

hFE @ VCE=10V

10

1
0.1

10

100

0.1

1000

10

100

1000

Collector Current-IC (mA)

Collector Current-IC (mA)

Saturation Voltage & Collector Current

Power Derating

1000

1200
o

25 C

125 C

PD(mW),Power Dissipation

Saturation Voltage (mV)

1000

75 C

VBE(sat) @ IC=5IB

800

600

400

200

100

0.1

10

100

1000

20

40

60

80

100

120

140

160

Collector Current-IC (mA)

Ta( C), Ambtient Temperatuer

Safe Operating Area

Collector Current-IC (A)

PT=1mS

0.1

PT=100mS

PT=1S
0.01
1

10

100

1000

Forward Voltage-V CE (V)

HMJE13001

HSMC Product Specification

HI-SINCERITY

Spec. No. : HA200213

Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 3/4

MICROELECTRONICS CORP.
TO-92 Dimension
A

Pb Free Mark
Pb-Free: " . " (Note)
Normal: None

B
1

DIM
A
B
C
D
E
F
G
H
I
1
2
3

Marking:

H MJ E
1 3 0 0 1

3
Control Code

Date Code

Note: Green label is used for pb-free packing

Pin Style: 1.Emitter 2.Collector 3.Base

Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0

Min.
4.33
4.33
12.70
0.36
3.36
0.36
-

Max.
4.83
4.83
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5
*2
*2

*: Typical, Unit: mm

I
E
F

3-Lead TO-92 Plastic Package

HSMC Package Code: A

TO-92 Taping Dimension

H2

H2A H2A

H2

D2

H3

H4 H
L

L1
H1

W1
W

D1

F1F2
T2
T
T1

P1
P
P2

DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1

Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00

Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm

Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMJE13001

HSMC Product Specification

HI-SINCERITY

Spec. No. : HA200213

Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 4/4

MICROELECTRONICS CORP.
Soldering Methods for HSMCs Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP

Critical Zone
TL to TP

TP
Ramp-up
TL
tL

Temperature

Tsmax

Tsmin
tS
Preheat

Ramp-down

25
t 25oC to Peak
Time

Profile Feature

Sn-Pb Eutectic Assembly

Pb-Free Assembly

<3 C/sec

<3oC/sec

- Temperature Min (Tsmin)

100oC

150oC

- Temperature Max (Tsmax)

150oC

200oC

60~120 sec

60~180 sec

<3oC/sec

<3oC/sec

183oC

217oC

Average ramp-up rate (TL to TP)

Preheat

- Time (min to max) (ts)

Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)

60~150 sec

Peak Temperature (TP)

Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature

60~150 sec

240 C +0/-5 C

260oC +0/-5oC

10~30 sec

20~40 sec

<6oC/sec

<6oC/sec

<6 minutes

<8 minutes

Peak temperature

Dipping time

245 C 5 C

5sec 1sec

3. Flow (wave) soldering (solder dipping)

Products
Pb devices.
Pb-Free devices.

HMJE13001

260 C +0/-5 C

5sec 1sec

HSMC Product Specification