Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
500
RDS(on) ()
VGS = 10 V
0.190
Qg (Max.) (nC)
150
Qgs (nC)
44
Qgd (nC)
72
Configuration
Available
RoHS*
COMPLIANT
Single
D
TO-247
APPLICATIONS
Zero Voltage Switching SMPS
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRFP23N50LPbF
Lead (Pb)-free
SiHFP23N50L-E3
IRFP23N50L
SnPb
SiHFP23N50L
SYMBOL
VDS
LIMIT
500
Gate-Source Voltage
VGS
30
VGS at 10 V
TC = 25 C
TC = 100 C
ID
UNIT
V
23
15
IDM
92
2.9
W/C
EAS
410
mJ
IAR
23
EAR
37
mJ
PD
370
dV/dt
14
V/ns
TJ, Tstg
- 55 to + 150
TC = 25 C
for 10 s
6-32 or M3 screw
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 C, L = 1.5 mH, RG = 25 , IAS = 23 A (see fig. 12).
c. ISD 23 A, dI/dt 430 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
0.24
-
MAX.
40
0.34
UNIT
C/W
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
V/C
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 A
500
VDS/TJ
Reference to 25 C, ID = 1 mAd
0.27
VGS(th)
3.0
5.0
Gate-Source Leakage
IGSS
VGS = 30 V
100
nA
IDSS
50
2.0
mA
RDS(on)
Forward Transconductance
gfs
0.190
0.235
VDS = 50 V, ID = 14 Ab
12
ID = 14 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
3600
Output Capacitance
Coss
VDS = 25 V,
380
Crss
Coss
Coss eff.
RG
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
VGS = 0 V
37
4800
100
VDS = 0 V to 400 Vc
220
VDS = 0 V to 400 Vd
160
1.2
ID = 23 A, VDS = 400 V
see fig. 6 and 13b
VDD = 250 V, ID = 23 A
150
44
26
72
-
94
td(off)
RG = 6.0, VGS = 10 V
53
tf
45
23
92
TJ = 25 C, IS = 14 A, VGS = 0 Vb
1.5
170
250
220
330
560
840
980
1500
7.6
11
pF
nC
ns
IS
ISM
VSD
trr
Qrr
IRRM
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C
TJ = 125 C
TJ = 25 C
IF = 23 A,
dI/dt = 100 A/sb
TJ =1 25 C
TJ = 25 C
V
ns
C
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS.
d. Coss eff. (ER) is a fixed capacitance that stores the same energy time as Coss while VDS is rising fom 0 to 80 % VDS.
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
1000.00
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
TOP
0.1
4.5 V
0.01
TJ = 25 C
100.00
TJ = 150 C
10.00
20 s PULSE WIDTH
TJ = 150C
1.00
0.1
10
100
1.0
6.0
100
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
16.0
ID = 23 A
TOP
10
11.0
1
4,5 V
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
0.1
0.0
10
100
-60
-40
-20
20
40
60
80
100
120 140
160
(C)
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
12
VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
C, Capacitance (pF)
100000
Ciss
1000
Coss
100
ID = 23
VDS = 400 V
VDS = 250 V
VDS = 100 V
10
Crss
10
10
100
1000
24
120
96
25
100.00
20
Energy (J)
72
48
15
10
TJ = 150 C
10.00
TJ = 25 C
1.00
VGS = 0 V
0.10
0
100
200
300
400
500
600
0.0
1.5
1.0
0.5
2.0
25
1000
20
100
10us
100us
10
15
10
1ms
5
TC = 25 C
TJ = 150 C
Single Pulse
10
10ms
0
100
1000
10000
25
50
75
100
125
150
(C)
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
RD
VDS
VDS
90 %
VGS
D.U.T.
RG
+
- VDD
10 %
VGS
10 V
Pulse width 1 s
Duty factor 0.1 %
td(on)
td(off) tf
tr
(Z thJC)
10
Thermal Response
D = 0.50
0.1
0.20
0.10
PDM
0.05
0.01
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
t1 / t2
2. PeakT
J = P DM x Z thJC + T C
0.001
0.00001
0.0001
0.001
0.01
0.1
4.5
4.0
ID = 250 A
3.5
3.0
2.5
2.0
1.5
1.0
5.0
ID
10A
15A
BOTTOM 23A
TOP
600
450
300
150
- 75 - 50 - 25
25
50
75
100
125 150
25
50
75
100
150
125
(C)
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
VDS
tp
15 V
VDS
Driver
D.U.T
RG
+
- VDD
IAS
20 V
tp
IAS
0.01
Current regulator
Same type as D.U.T.
50 k
12 V
QG
10 V
0.2 F
0.3 F
QGS
D.U.T.
VDS
QGD
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
D.U.T
+
-
RG
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91209.