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MICROWAVE POWER GaAs FET

TIM5964-16SL

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 31.5dBm
Single Carrier Level
HIGH POWER
P1dB=42.5dBm at 5.9GHz to 6.4GHz

HIGH GAIN
G1dB=8.0dB at 5.9GHz to 6.4GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS

( Ta= 25C )

CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness

SYMBOL
P1dB

Power Added Efficiency


3rd Order Intermodulation
Distortion
Drain Current

add
IM3

Two-Tone Test
Po=31.5dBm

IDS2

Channel Temperature Rise

Tch

G1dB
IDS1

CONDITIONS

UNIT
dBm

MIN.
41.5

dB

7.0

8.0

4.4

5.0

dB
%
dBc

-42

34
-45

0.8

(Single Carrier Level)

4.4

5.0

(VDS X IDS + Pin P1dB)

80

UNIT
mS

MIN.

MAX.

TYP.
3600

-1.0

-2.5

-4.0

10.5

-5

C/W

1.5

2.0

VDS= 10V
f= 5.9 to 6.4GHz

X Rth(c-c)

TYP. MAX.
42.5

Recommended Gate Resistance(Rg): 100 (Max.)

ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance

Saturated Drain Current

IDSS

Gate-Source Breakdown
Voltage
Thermal Resistance

VGSO

CONDITIONS
VDS= 3V
IDS= 6A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
IGS= -200A

Rth(c-c)

Channel to Case

Pinch-off Voltage

SYMBOL

( Ta= 25C )

gm
VGSoff

The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.

Rev. Oct. 2006

TIM5964-16SL

ABSOLUTE MAXIMUM RATINGS

( Ta= 25C )

CHARACTERISTICS

SYMBOL

UNIT

RATING

Drain-Source Voltage

VDS

15

Gate-Source Voltage

VGS

-5

Drain Current

IDS

14.0

Total Power Dissipation (Tc= 25 C)

PT

75.0

Channel Temperature

Tch

175

Storage Temperature

Tstg

-65 to +175

PACKAGE OUTLINE (2-16G1B)


Unit in mm

(1) Gate
(2) Source
(3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL


Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260C.

TIM5964-16SL

RF PERFORMANCE
Output Power vs. Frequency
VDS=10V
IDS4.4A

Pout(dBm)

Pin=34.5dBm
43
42
41
40

5.8

5.9

6.0

6.1

6.2

6.3

6.4

6.5

Frequency (GHz)

Output Power(Pout) vs. Input Power(Pin)


45

freq.=6.15GHz
44
43

VDS=10V
IDS4.4A
80

42

70

41

60

40

50

39

40

add
38

30

37

20

36

10
28

30

32

34

Pin(dBm)

36

38

add(%)

Pout(dBm)

Pout

TIM5964-16SL

Power Dissipation vs. Case Temperature


90

PT (W)

60

30

0
0

40

80

120

200

160

Tc (C)

IM3 vs. Output Power Characteristics


-10

VDS=10V
IDS4.4A
-20

freq.=6.15GHz
f=5MHz

IM3(dBc)

-30

-40

-50

-60
26

28

30

32

Pout(dBm) @Single carrier level

34

36

MICROWAVE POWER GaAs FET

TIM5964-16UL

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA
FEATURES
HIGH POWER
P1dB=42.5dBm at 5.9GHz to 6.4GHz
HIGH GAIN
G1dB=10.0dB at 5.9GHz to 6.4GHz

BROAD BAND INTERNALLY MATCHED FET


HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain

SYMBOL

( Ta= 25C )

CONDITIONS

P1dB

UNIT

MIN.

TYP. MAX.

dBm

41.5

42.5

dB

9.0

10.0

4.4

5.0

Compression Point
Power Gain at 1dB Gain

VDS= 10V

G1dB

Compression Point

IDSset=3.6A

f = 5.9 to 6.4GHz

Drain Current

IDS1

Gain Flatness

dB

0.6

Power Added Efficiency

add

36

3rd Order Intermodulation

IM3

dBc

-44

-47

Distortion
Drain Current
Channel Temperature Rise

Two-Tone Test
Po= 31.5dBm

IDS2

(Single Carrier Level)

4.4

5.0

Tch

(VDS X IDS + Pin P1dB)

80

UNIT

MIN.

mS

3600

-1.0

-2.5

-4.0

10.5

-5

C/W

1.5

1.8

X Rth(c-c)

Recommended gate resistance(Rg) : Rg= 100 (MAX.)

ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage

SYMBOL

gm
VGSoff

Saturated Drain Current

IDSS

Gate-Source Breakdown
Voltage

VGSO

Thermal Resistance

( Ta= 25C )

CONDITIONS
VDS= 3V
IDS= 6.0A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
IGS= -200A

Rth(c-c) Channel to Case

TYP. MAX.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.

Rev. Jun. 2009

TIM5964-16UL

ABSOLUTE MAXIMUM RATINGS

( Ta= 25C )

CHARACTERISTICS

SYMBOL

UNIT

RATING

Drain-Source Voltage

VDS

15

Gate-Source Voltage

VGS

-5

Drain Current

IDS

14

Total Power Dissipation (Tc= 25 C)

PT

83.3

Channel Temperature

Tch

175

Storage

Tstg

-65 to +175

PACKAGE OUTLINE (2-16G1B)


Unit in mm

c Gate
d Source
e Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL


Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260C.

TIM5964-16UL

RF PERFORMANCE
Output Power vs. Frequency
45

VDS= 10V
IDS 4.4A
Pin= 32.5dBm

43
42
41
40
5.7

5.8

5.9

6.1

6.2

6.3

6.4

6.5

6.6

Frequency (GHz)

Output Power vs. Input Power

90

f= 6.15GHz
VDS= 10V
IDS 4.4A

44

80

Po

43

70

42

60

41

50

40

40

39

30

add

38

20

37

10

36

0
26

28

30
32
Pin (dBm)

34

36

add (%)

45

Po (dBm)

Po (dBm)

44

TIM5964-16UL

Power Dissipation vs. Case Temperature


100

80

PT (W)

60

40

20

0
0

40

80

120

160

200

Tc ()

IM3 vs. Output Power Characteristics


-20

VDS= 10V
IDS 4.4A
f= 6.15GHz
f= 5MHz

IM 3 (dBc)

-30

-40

-50

-60
27

29

31

33

35

Po(dBm), Single Carrier Level

37

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