TIM5964-16SL
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 31.5dBm
Single Carrier Level
HIGH POWER
P1dB=42.5dBm at 5.9GHz to 6.4GHz
HIGH GAIN
G1dB=8.0dB at 5.9GHz to 6.4GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
( Ta= 25C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
SYMBOL
P1dB
add
IM3
Two-Tone Test
Po=31.5dBm
IDS2
Tch
G1dB
IDS1
CONDITIONS
UNIT
dBm
MIN.
41.5
dB
7.0
8.0
4.4
5.0
dB
%
dBc
-42
34
-45
0.8
4.4
5.0
80
UNIT
mS
MIN.
MAX.
TYP.
3600
-1.0
-2.5
-4.0
10.5
-5
C/W
1.5
2.0
VDS= 10V
f= 5.9 to 6.4GHz
X Rth(c-c)
TYP. MAX.
42.5
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
IDSS
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO
CONDITIONS
VDS= 3V
IDS= 6A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
IGS= -200A
Rth(c-c)
Channel to Case
Pinch-off Voltage
SYMBOL
( Ta= 25C )
gm
VGSoff
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
TIM5964-16SL
( Ta= 25C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Drain Current
IDS
14.0
PT
75.0
Channel Temperature
Tch
175
Storage Temperature
Tstg
-65 to +175
(1) Gate
(2) Source
(3) Drain
TIM5964-16SL
RF PERFORMANCE
Output Power vs. Frequency
VDS=10V
IDS4.4A
Pout(dBm)
Pin=34.5dBm
43
42
41
40
5.8
5.9
6.0
6.1
6.2
6.3
6.4
6.5
Frequency (GHz)
freq.=6.15GHz
44
43
VDS=10V
IDS4.4A
80
42
70
41
60
40
50
39
40
add
38
30
37
20
36
10
28
30
32
34
Pin(dBm)
36
38
add(%)
Pout(dBm)
Pout
TIM5964-16SL
PT (W)
60
30
0
0
40
80
120
200
160
Tc (C)
VDS=10V
IDS4.4A
-20
freq.=6.15GHz
f=5MHz
IM3(dBc)
-30
-40
-50
-60
26
28
30
32
34
36
TIM5964-16UL
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
HIGH POWER
P1dB=42.5dBm at 5.9GHz to 6.4GHz
HIGH GAIN
G1dB=10.0dB at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
SYMBOL
( Ta= 25C )
CONDITIONS
P1dB
UNIT
MIN.
TYP. MAX.
dBm
41.5
42.5
dB
9.0
10.0
4.4
5.0
Compression Point
Power Gain at 1dB Gain
VDS= 10V
G1dB
Compression Point
IDSset=3.6A
f = 5.9 to 6.4GHz
Drain Current
IDS1
Gain Flatness
dB
0.6
add
36
IM3
dBc
-44
-47
Distortion
Drain Current
Channel Temperature Rise
Two-Tone Test
Po= 31.5dBm
IDS2
4.4
5.0
Tch
80
UNIT
MIN.
mS
3600
-1.0
-2.5
-4.0
10.5
-5
C/W
1.5
1.8
X Rth(c-c)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
SYMBOL
gm
VGSoff
IDSS
Gate-Source Breakdown
Voltage
VGSO
Thermal Resistance
( Ta= 25C )
CONDITIONS
VDS= 3V
IDS= 6.0A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
IGS= -200A
TYP. MAX.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
TIM5964-16UL
( Ta= 25C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Drain Current
IDS
14
PT
83.3
Channel Temperature
Tch
175
Storage
Tstg
-65 to +175
c Gate
d Source
e Drain
TIM5964-16UL
RF PERFORMANCE
Output Power vs. Frequency
45
VDS= 10V
IDS 4.4A
Pin= 32.5dBm
43
42
41
40
5.7
5.8
5.9
6.1
6.2
6.3
6.4
6.5
6.6
Frequency (GHz)
90
f= 6.15GHz
VDS= 10V
IDS 4.4A
44
80
Po
43
70
42
60
41
50
40
40
39
30
add
38
20
37
10
36
0
26
28
30
32
Pin (dBm)
34
36
add (%)
45
Po (dBm)
Po (dBm)
44
TIM5964-16UL
80
PT (W)
60
40
20
0
0
40
80
120
160
200
Tc ()
VDS= 10V
IDS 4.4A
f= 6.15GHz
f= 5MHz
IM 3 (dBc)
-30
-40
-50
-60
27
29
31
33
35
37