For Displays and Projectors

Ultra-high Quality Output Devices

SY204A

Screens for LifeIike Images

Sanyo Advanced High-voltage Process
Along with the recent growth in multimedia, the demand for CRT displays
and monitors has been expanding rapidly, especially for personal
computer applications such as CAD/CAM, computer graphics and
games. More recently, broadcasting has finally begun in Hi-Vision
(HDTV), Clear-Vision(EDTV) and cable TV(CATV) and three-dimensional
graphics based games have become widespread. This has resulted in
the development of strong demands for large screen sizes, high image
quality, high product quality and thinner form factors.
Sanyo began developing output devices for these areas early on and has
responded to market needs by establishing a wide range of advanced
semiconductor technologies to achieve high breakdown voltages, low
capacitances, large current and high speed switching. Sanyo is committed
to work in harmony and cooperation with the CRT display and monitor
and AV industries where the trend towards multimedia is accelerating,
and to take maximum advantage of the most advanced semiconductor
and quality control technologies to develop Sanyo semiconductor
products that respond to these market needs and will be well-received by
the market.

CONTENTS
Major process technology/features and functions 3
Video Packs 5
Transistors for Video Output Applications 7
Transistors and Damper Diodes for Horizontal
9
Deflection Output Applications
Dynamic Focus Transistors 11
Power MOSFETs for CRT Displays and Monitors 13

Major process technology/features and functions ----------------------------------------------------------------------------------------------------------------------- Video Packs

High-performance video output transistor: Enabling singlepackage product development of video output circuits.
Comparison with discrete circuits:Operation at a larger
amplitude and wider bandwidth. Reduction in unwanted
radiation noise and in circuit board size.
Horizontal deflection output modules
(HPA series)
Single-package product: Incorporating a horizontal deflection
output transistor and an external damper diode
Comparison with discrete products: More stable operation
and higher quality with better linearity characteristics
Power MOSFETs
These products achieve a world-class high breakdown
voltage by adopting the UH process(ultrahigh-voltage planar
process) which applies the HVP process to a precise MOS
process.
These products achieve low capacitance and high-speed
switching due to their efficient current division provided by
the HVMG structure (high voltage multi-gate structure)
despite an ultrahigh breakdown voltage.
H-3 Series
These products achieve a low Qg due to an SSP(stepsection Polysilicon)structure based on a new LGCP(low
gate-charge process) process technology.

Video output transistors

(FBET: Foldback electrode transistor
LSBT: Locally shallowed base transistor)
Double-layer electrode structure: High fT, low capacitance
and high withstand voltage
Horizontal deflection output transistors
(MBIT: Multi-base island transitor
HVP: High-voltage planar)
Precision process technology: Large current and high
withstand voltage
Damper diodes
(LCP/HVP)
Lifetime control technology: High speed and high withstand
voltage
Dynamic focus
(HVP) Planar structure: Low capacitance and high withstand
voltage, enabling product development in the form of modules

300

FAA/
Medical

200

CRT display &HDTV field

100
Graphics/
DTP

CAD/CAM

100
50
Business-use personal computer

30

Personal computer

Video frequency,fV (MHz)

Video frequency,fV (MHz)

SANYO

HDTV

50

HDTV & CAD CAM

multi-scanning

30
AV television field

EDTV
TV

HDTV

10

AV television

10

20

30

40

10

50

60

70

80

90 100 110 120 130

10

20

30

40

50

60

Horizontal deflection frequency,fH (kHz)

Horizontal deflection frequency,fH (kHz)

History of device technologies in CRT display monitor and television fields

Video output transistors/Video Packs

FBET process completed.

Development of lowcapacitance and high
withstand voltage chips
started.

1981

1982

LSBT process completed

1983

HVP process completed

Dvelopment of planar
products for television
started

1984

Chip performance enhancement with FBET

/LSBT process
Single-package video
output circuits

1985

MBIT process completed.

900V/HVP technology
completed

1986

Performance enhancement for

television applications.
LCP processcompleted

Enhancement
of Video Pack
series

1987

Super high speed

and large current
developed
1.2 kV HVP technology completed

Chip performance
enhancement with
F B E T/ L S B T
process

1988

Horizontal output
modules
1.5 kV HVP technology completed

Video Packs for

high frequency/
high density

1989

1.8 kV HVP technology completed

Power MOSFETs
H-1 technology

FBET/LSBT
process

Vide

o am

Vide

plifie

r
Sync

LA78

55

o out

put

and d

eflec
tion

Video pack series

LA783

7/38

Vertic
al ou

Horiz

tput

ontal

drive
LCP process

Horiz

ontal
d

eflec
ti

on ou

tput

MBIT process

Dyna

mic f

ocus

HVP process

Video Chip performance

enhancement for highvision broad-casting

1990

Development of
high-vision application products
2.1 kV HVP technology completed

1991

2.5 kV HVP technology completed

Power MOSFETs
H-2 technology

Second generation
chip completed for
ultrahigh-frequency
video output 1600V
HO series

1993

50A ultrahigh-speed H/O

Video Pack miniaturization
Micromodule packaging
Power MOSFETs H-3
technology UH-2

1994

1995

Third-generation
H/O transistor
series

1996

PNP 900V
Video Pack Reduced
power-composite
circuits

1997

Fourth-generation
H/O transistor
1700V series
Prearrange
development

1998

Third-generation
H/O transistor
1600V series

High performance guaranteed: Reduction of

turnaround time and EMI-free systems

Video Packs
Hybrid intergrated circuits/with FBET/LSBT process chips/Wide bandwidth
video output ICs
Video Pack Intemal View

Due to their ease of viewing, resolution, and excellent

response characteristics, CRT monitors are optimal as
high-precision multimedia display devices. Sanyo
video packs are video output modules that have
evolved as key devices for increasing the precision of
CRT monitors by adopting technological elements
characteristic of high-frequency circuits, including
circuit technologies, ease of mounting, and noise
reduction. Currently, the Sanyo product line ranges
from ultrahigh precision versions that operate at
frequencies as high as 250 MHz, to active load circuit
type products that respond to needs for reduced
power dissipation in end products, and to highperformance cascode products that provide three
channels in a single pack. Sanyo is continually striving
to respond to customer demand for improved monitor
performance and provides products with total merit.

Video Pack application map (representative models)

CRT size

fH 100kHz to
cascode

fH to 100kHz

21inch

active

VP201
cascode
19inch

fH to 85kHz
cascode
17inch

active

VP301

VPS12

VP453

VPS13

VPS10

VP553

VPS16

VP353

VPS10S

VP503
VP603
VP513

12801024

16001200

dotline

8-pin mini-molded(3 channels)

15-pin molded(3 channels)
9-pin mini-molded(1 channe)
Development now

VPS12 (cascode)
Sweep output waveform

VP453 (active load circuit)

Output pulse response

VP201
Output pulse response (tr)

VP201
Output pulse response (tf)

Video Pack mounting example

SIP-15MVP

SIP-9MVP

SIP-18SMVP

SIP-9SMVP

Recommended Video Pack lineup for CRT displays

Frequency characteristics

Application field
(horizontal
frequency)

Vcc(max)
[V]

Type No.

f(3dB)
[MHz]

tr /tf
[ns]

Gain
(DC)

No. of
channels

Package type

Up to 17-inch

VP513

90

80

5.8/5.0

16

SIP-18SMVP

mid-range models

VP603

90

85

5.2/5.0

19

SIP-18SMVP

(up to 85 kHz)

VP503

90

95

5.0/4.5

19

SIP-18SMVP

120
90
90
90
90

100
120
120
80
90

5.2/4.0
4.4/3.1
4.2/2.9
4.8/4.5
4.0/3.6

19
15
15
15
13

3
3
3
3
3

SIP-15MVP
SIP-15MVP
SIP-15MVP
SIP-15MVP
SIP-15MVP

90
90
90
90

120
150
95
130

3.9/3.3

15

SIP-9SMVP

3.0/2.4

15

SIP-9SMVP

3.3/2.9

15

SIP-15MVP

3.5/2.9

15

SIP-15MVP

90
90

230

2.3/2.3

15

SIP-9SMVP

160

3.1/2.3

15

SIP-15MVP

Gain
(DC)

No. of
channels

VPS10S
VPS12S
VPS12
VP553
VP453

17-inch and larger highgrade models

(70 to 100 kHz)

VP401

19 to 21-inch

VP301

high-grade models

VP353

(85 to 110 kHz)

VPS13

21-inch high-end models

VP201

(110 kHz and higher)

VPS16

: New product development:Active load (3 channels)

: Active load (3 channels)

Recommended Video Pack lineup for HDTV and Data projectors

Frequency characteristics

Application field
(Video
frequency)

Vcc(max)
[V]

Type No.

HDTV(30MHz)

Data projector
(50 to 150MHz)

f( 3dB)
[MHz]

VPJ03

230

30

VPJ05
VPJ06
VPJ08B
VPJ13S
VPJ15

230
230
180
120
120

50
70
80
130
150

Package type

Vout
[Vp-p]

Vcc
[V]

100

150

26

SIP-9MVP

170
170
150
100
100

29
29
26
14
15

1
1
1
1
1

SIP-9MVP
SIP-9MVP
SIP-9MVP
SIP-9SMVP
SIP-9MVP

100
100
80
50
50

RL without (RL800)

Video pack circuits (representative models)

VP453 (active load)
R6

R4

C4

03

VPS12 (cascode)

R12

C8

R14

C7

R20

R22

C11

R4

C12

1.0k

R9

L2
TR2

TR6
TR4
R2

R7

TR8
R10
D3
D4

D1
D2

C1

TR10
R15

TR3

C5

TR5

R7 TR8

R1

R6 TR7

TR3
R5
R17
TR11

TR7

TR1

TR4 R2

D2

D5
D6

C9

R9

R1

D1

TR12
R18

R23

TR9

R3

C6

C2

R8

GND

IN1

NC

D3
D4

D5
D6

L1

L3

TR2

TR6

R10

R15

C4

1.0k

TR12
R12
R11
TR11

L5

TR10
C2

C3

R21

R11

TR1

TR5

TR9

R3
62

R8
62

R13
62

C10

R19

R16

OUT1 VCC1 GND VCC2 OUT2

R14
L6

C1
R13

R5

1.0k

L4

R24

10 11 12

13

NC

IN2 GND IN3

NC

14

15

OUT3 VCC3

VBB1 IN1

TE1 OUT1 GND OUT2 TE2

8 9 10 11 12

13

14 15

IN2 VBB2 GND VBB3 IN3

TE3

OUT3 VCC

Wide bandwidth for new displays and TVs

industry's top-level high-quality devices

Transistors for Video Output App

FBET/LSBT process high withstand voltage transistors for wide bandwidth video
Video output transistor chip

Function comparison
(with Sanyo's conventional devices)
Parameter

5 times larger

Cut-off frequency

6 times higher

MOS capacitance

Reduced by 30%

High end personal

computers
CAD/CAM

Graphics FAA
/DTP
/Medical

300

2SC4563
2SC4411
2SA1723/2SC4271
2SA1403/2SC3597

200

HDTV
2SC3950
2SA1777/2SC4623
2SA1541/2SC3956
100

EDTV
2SA1480/2SC3790
2SC4378

2SC3950
2SC4821
2SA1536/2SC3951
2SA1537/2SC3952
2SA1538/2SC3953
2SA1540/2SC3955

2SA1402/2SC3596
2SA1405/2SC3599
2SC3595

2SA1380/2SC3502
2SC3504
2SA1478/2SC3788
AV televisions
0

10

20

30

50

70

200 300

100

Video frequency,fv (MHz)

Doubled

Features of FBET/LSBT process technology

FBET : Foldback electrode transistor
LSBT : Locally shallowed base transistor

Personal computers
EDTV/HDTV

Compared to
conventional devices

Current (Ic max)

Surge handling capability

Video output transistor application map

(without FLP package)

Actual operating current,lc (mA)

Transistors used in video output circuits with wide

bandwidth and large output amplitude specifications
should have the following characteristics:
- Excellent high-frequency characteristics at high
withstand voltage
- Low collector capacitance
- Large maximum operating current
- High surge-breakdown level
The functions of video output circuits are determined
by the above characteristics.
Sanyo has been improving the characteristics of video
output transistors using FBET and LSBT process
technologies to meet these specifications.Video output
transistor series products are already on the market
and can be used in a wide range of applications

-FBET process technology

In conventional extended electrode structure
devices, the extended base electrode which
covers part of the collector layer and the insulating
region produces an unwanted MOS capacitance.
This MOS capacitance can be reduced significantly
by making the base and emitter electrodes doublelayered, where bonding pads are folded over
operating part and insulating films are under the
pads.
-LSBT process technology
The fT characteristics can be improved by making
the base region "shallow' and other regions
"shallow" or "deep" selectively. Note that this
technology does not reduce the withstand voltage
and electrostatic breakdown.

Isometric cross section

FBET/LSBT

Conventional products

Base electrode

Interlayer insulating film

Second-layer electrode

Emitter electrode
Wire

Insulating
film

Insulating
film
Collector
region

Base region
First-layer
Emitter region electrode

Base region

Emitter region

Collector region

lications
output circuits
FLP

MP

TO126

TO126ML

TO220

Recommended video output transistor lineup for cascade connection + emitter-follower circuit
Application field
(video frequency)

2SC3504
Personal computers
(up to 50 MHz)

VCEO

(V)

(V)

IC
max
(A)

fT
typ
(MHz)

Cob
typ
(pF)

Package type

70

60

0.05

500

1.3

2SA1478/2SC3788

200

200

0.1

150

2.6/1.7

TO126ML

2SA1380/2SC3502

200

200

0.1

150

2.6/1.7

TO126

30

20

0.5

2.0G

6.0

2SC3950
2SC4821

High end

VCBO
Type No.

personal computer

2SA1536/2SC3951

80

70

0.3

600

3.1/2.4

CAD/CAM

2SA1537/2SC3952

80

70

0.5

700

5.4/3.6

2SA1538/2SC3953

120

120

0.2

400

2.8/2.1

2SA1540/2SC3955

200

200

0.1

300

2.4/1.9

MP

TO126ML
FLP

TO126ML

(up to 80 MHz)

30

20

0.5

2.0G

6.0

DTP

2SC3595
2SA1402/2SC3596

80

60

0.3

700

3.0/2.3

(up to 200 MHz)

2SA1405/2SC3599

120

120

0.3

500

4.3/2.9

2SA1723/2SC4271

30

20

0.3

1.5G/2.2G

3.9/5.8

80

60

0.5

800

5.2/3.4

2SC4563

100

80

0.5

1.2G

4.4

TO126ML

2SC4411

100

80

0.5

1.2G

4.4

TO220

Graphics

TO126

TO126

Graphics

2SA1403/2SC3597

FAA Medical
(up to 300 MHz)

2SC3950

30

20

0.5

2.0G

6.0

300

300

0.1

150

3.1/2.6

2SC4378

300

300

0.2

100

3.0

2SC3950

30

20

0.5

2.0G

6.0

2SA1777/2SC4623

250

250

0.3

400

5.0/4.2

2SA1541/2SC3956

200

200

0.2

300

3.2/2.6

EDTV

2SA1480/2SC3790

(up to 20 MHz)

TO126ML
HDTV
(up to 30 MHz)

Next generation video output transistor types under development

Sanyo is now developing the next generation of video output transistors by adopting and making further improvements to an ultrahigh-frquency
process (a 10 GHz process)
VCBO

VCEO

fT

Cob

(V)

IC
max
(A)

(V)

(Hz)

(pF)

100

100

0.1

2.0G

1.5/1.2

Type No.

TS4159/TS4160

Polarity

PNP/NPN

Real-time design for multi-scan

Transistors and Damper Diodes

for Horizontal Deflection Output Appl
High-current,high withstand voltage MBIT horizontal deflection output transistors
Horizontal deflection output transistor chip

Horizontal deflection output transistor/

damper diode application map (Representarive type No)
20

BIP-TR
15
2SC5238
2SC5300
2SC5301
2SC5303
2SC5452
2SC5453
2SC5443
2SC5444

10
Net operating current,Icp (A)

The fH = 64 to 80 kHz class has now become the

mainstream in ultrahigh-definition CRT displays and
monitors and 130 kHz class products are now in use.
In the AV and television area, large screen products
have become the mainstream and 33.75 kHz HDTV
products are available and are poised to become
popular. Increased switching loss and the need for
larger circuit boards have become problems due to
this trend to larger screen sizes and higher definition.
Sanyo has already introduced a series of bipolar transistor products that can handle applications with an fH
of up to 130 kHz based on our unique high-precision
process technology (the MBIT process) and lifetime
control technology (the LCP process). Furthermore,
we have succeeded in providing commercial products
(the HPA series) which have a built-in ultrahigh-speed
damper diode. This rich lineup and extensive set of
unique technologies mean that Sanyo can respond to
a wide range of needs from AV equipment and
television to graphics monitors.

POWER
MOS FET

DD82RC
DD82SC
DD84RC/DD84SC
DD82RC
DD82SC
DD84RC/DD84SC
2SC5302
2SC5451

5
2SD2580/1
2SD2578/9

DD52RC
DD54RC/DD54SC

2SC5296
2SC5297

2SK2347
2SK2348
2SK2349

DD82RC
DD82SC
DD84RC/DD84SC

2SC5298
2SC5299
2SC5450

DD54RC/SC

2
1.5

1
10

15

20

30

50

70

100

150

200

Horizontal deflection frequency,fH ( kHz)

Features of the MBIT process technology

MBIT cross section

Isometric cross section

MBIT

MBIT : Multi-base island transistor

MBIT transistors are composed of a large number of
island-like bases and emitters. As the MBIT structure
is an aggregate of "unit transistors", the emitter
region is sub-divided and its total area and total
peripheral length are increased. This means that
these transistors can operate at higher withstand
voltages and larger currents. In addition, they operate
with uniform emitter current density. The distance
between the base electrode and the transistor base
itself is short, reducing the switching time (tf).

Electrode

Emitter electrode

Emitter

Emitter

Base
electrode

Base

Switching time

Area of safe operation

Compared to
conventional products
1/2 to 1/3
Improved by 30%

Collector

Conventional products

Emitter

Base electrode
Insulating
film

Function comparison
(with Sanyo's conventional devices)
Parameter

Base
Multi-layer
protection film

Base

Emitter electrode

Collector

Collector electrode

Base

Emitter

Collector

ications
T0220FI

T03PML

T03PBL

T03JML

Recommended transistor/damper diode lineup for line-operation horizontal deflection output

Icp[A]
Damper diode

fH
15.75 to 24 kHz

to 32 kHz

to 56 kHz

With

up to 3A
Micaless
2SD1876
2SD1877

3A to 5A
Mica type

Micaless
2SD1878
2SD1879
2SD2578

Without

2SD1882
2SD1883

2SD1884
2SD1885
2SD2579

With
Without

2SC5296

2SC5298

With
Without

HPA72R

Without

100 kHz to

Without

Mica type

Micaless

9A to 15A
Mica type

Micaless

Damper Diode
Mica type

2SD1886
2SD1887
2SD2581

Micaless

DD54RC

HPA150R

HPA201R
2SC5443
TT2004

2SC5300
2SC5301
TS7992

HPA251R
2SC5444
TS7994

2SC5303

DD50R

DD52RC
DD54RC/SC
DD82RC/SC
DD84RC/SC

DD50R

DD52RC
DD54RC/SC

DD50R

DD52RC
DD82RC/SC
DD84RC/SC

HPA100R

2SC5297

2SC5299
TS7988
HPA150R

Without

to 100 kHz

7A to 10A

Micaless
2SD1880
2SD1881
2SD2580

2SC5302
TS7990

With

to 70 kHz

5A to 7A
Mica type

2SC5299
TS7988

HPA201R
2SC5302
TS7990

2SC5443

HPA251R

2SC5300
TS7992

2SC5302
2SC5300
TS7990
TS7992

2SC5443

2SC5300
2SC5301
TS7992

2SC5444
TS7994

2SC5303

DD50R

DD82RC/SC
DD84RC/SC

2SC5300
2SC5301
TS7992

2SC5443
2SC5444
TS7994

2SC5301
2SC5303

2SC5444
TS7994

2SC5303
2SC5238

DD50R

DD82RC/SC

Package type:TO3PB(Mica type),TO3PML(Micaless)

TT2004
1.6kV series
DDXXSC TS79XX

indicates the TO3PBL package

indicates the TO220FI package
indicates the TO3JML package

An example of horizontal output circuit

Horizontal output
circuit
FBT

Horizontal Drive
Pulse

Horizontal driver

2SC5238

10

No picture ever out of focus with

better focus characteristics

Dynamic Focus Transistors

HVP process dynamic focus transistors with ultrahigh withstand voltage
Dynamic focus transistor chip

Dynamic focus transistor application map

2000

1800

Output voltage,VOUT (Vp-p)

Cathode ray tubes (CRTs) are now used in a wide

variety of applications, including color TVs, office
automation equipment (personal computers and word
processors) and very high-resolution CAD/CAM monitors. Flatter and larger display screens have been
developed which make lengthy viewing more tireless.
As a result, focus characteristics have become
another important technological subject for development.
"Dynamic focus technology" is one of the solutions to
the problems of improving the focus characteristics.
Using this technology, an out-of-focus screen can be
adjusted by changing the CRT electron beam focus
during horizontal and vertical scanning, thereby
keeping the electoron beam spot radius constant the
whole time it is on the screen. This means that highquality picture reproduction can be achieved.
"Dynamic focus technology" is an integral part of highquality and large-screen color television applications.
The withstand voltage and output capacitance of
transistors needed in dynamic focus circuits have also
become an important issue.
Sanyo has developed product series with ultrahighwithstand voltages and low output capacitance characteristics. The transistors were developed using
Sanyo's high-voltage planar process (HVP)process
technology. Note that transistors with VCEO = 900 to
1800 V specifications are included in the product lineup.
These series enable electron beam dynamic focus
control, the component technology required for large
screen, high-resolution displays.
Furthermore, we have succeeded in developing highvoltage operation(900V)PNP transistor products.

2SC4710

1600

1400

2SC4636/7

1200

2SC4634/5
1000

2SC4256/7
2SC4632/3

800

2SC3675/6
2SC4630/1
10

15

20

25

30

CRT screen size (unit: inch)

Sample application circuit

2SC4633
2SC4632

Deflection coil

Out-of-focus on
the circumference

Electron gun
Beam spot focus
Electron beam

11

35

40

T0220

T0220FI

Recommended transistor line-up for NPN dynamic focus

Type No.
TO220

TO220FI

2SC3675

2SC4630

2SC3676

2SC4631

2SC4256

2SC4632

2SC4257

2SC4633

2SC4634

2SC4635

2SC4636

2SC4637

2SC4710

VCBO
(V)

VCEO
(V)

1500

900

1500

1200

1500

1500

2000

1800

2100

IC
(mA)

VCB
(V)

Cob
(pF)

VCE
(V)

IC
(mA)

100

2.8

10

300

30

10

1.6

0.5

30

2.0

1.5

10

100

1.5

hFE

CRT
tube size
(inches)

30min

16 to 20

20 to 26

0.2

20

1.9

0.6

10 to 60

10

1.4

0.1

15

1.8

0.3

2100

10

1.3

0.5

VCBO
(V)

VCEO
(V)

IC
(mA)

VCB
(V)

Cob
(pF)

VCE
(V)

IC
(mA)

hFE

900

900

10

100

2.2

1.0

20 to 50

30 to 33

33 to 40
35 to 40

PNP high-voltage transistors

Type No.
TO220

TO220FI

2SA1967

2SA1968

HVP product features

HVP : High-voltage planar
In conventional transistor structure, the depletion
region expansion required by high withstand voltage operation is unstable. To make the depletion
layer expand steadily, diffusion layers (guard
rings) of the same conduction type as that of the
base layer were made within the collector. This
allows the depletion layer from the base-collector junction to expand with the depletion
layers of the guard rings one after the other,
resulting in a stable depletion layer cross the
collector. In addition, a multilayer protection film
is added to prevent the withstand voltage level
changing due to device status, producing highreliability devices with high-withstand voltages.

Isometric cross section

HVP

Conventional products

Multilayer
protection film
Emitter
electrode

Collector
electrode

Base electrode

Insulating film

Base electrode

Emitter electrode

Emitter

Base

Base
Emitter

Guard ring

Collector

Collector

Depletion layer

12

Full multimedia support

Power MOSFETs
for CRT Displays and Monitors
Power MOSFET chip

Power MOSFETs for ultrahigh-definition CRT displays and monitors

AIong with advances in the application of multimedia, CRT displays and monitors have evolved towards higher resolutions and wider
aspect ratios, and miniaturization and weight reduction have progressed in the increasingly high-performance peripheral circuits and
equipment associated with CRTs. To respond to these needs, we at Sanyo have developed power MOSFETs that take full advantage of
Sanyo-developed technologies, so that Sanyo now provides an extensive lineup of these products.
By providing a series of ultrahigh-operating voltage (15OO V) high-speed switching characteristic MOSFETs, Sanyo is able to provide
MOSFETs that can be used in the horizontal deflection output circuit in wide-screen CRT display monitors, including those used in
projection systems. Also, by providing a series that achieve reduced switching loss in the high-frequency band, Sanyo products can be
applied in retrace period switching and S-curve correction capacitor switching systems, and can support the use of microprocessor
control of CRT drive circuits.

Overview of the Sanyo Power

MOSFET Process

Power MOSFET
Three-dimensional Structure

This process achieves high blocking voltages,

large current and high speed switching by
applying Sanyo's unique high-precision power
transistor process. In particular this process
adopts the UH process (Note 1) which applies
the HVP process (Note 2) to a high-precision
MOS process. Thus the UH series achieves the
industry's highest level with a VDSS of 1500 V.
Using Sanyo's HVMG structure (Note 3), the UH
series is capable of high-speed switching with
efficient current division and low capacitance
despite an ultrahigh-breakdown voltage.
Note 1. Ultrahigh-voltage planar process
Note 2. High-voltage planar process
Note 3. High-voltage multi-gate structure

Chip Internal Potential

State Simulation

Metal
SiO2

Source

N+ polysilicon
Gate

N
Metal
P
NN+

Substrate
Epitaxial

Drain

CRT Display and Monitor Peripheral Equipment Application Circuit

Chopper power
supply

Switching power
supply block

AC input

Choke coil

Horizontal output block

Blanking period
switching block

Horizontal AFC
oscillator

13

S-curve correction block

Horizontal
drive block

ZP

TO-220FI

TO-220ML

TO-220

TO-3JML

Power MOSFET Recommended Lineup for Ultrahigh-Definition CRT Displays and Monitors
Absolute Maximum Ratings
Ta = 2 5 C
Application field

Type No.

Electrical Characteristics
Ta = 2 5 C

VDSS

VGSS

ID

(V)

(V)

(A)

RDS (on)

Ciss

typ/max

typ

()

(pF)
550

2SJ403

0.8/1.1

2SJ404

0.6/0.8

700

0.37/0.5

1100

0.17/0.23

2400

2SJ405

200

20

+B chopper

2SJ406

12

power supply

2SJ306

1.5/2.0

600

2SJ307

0.75/1.0

1250

0.35/0.48

2700

1.0/1.3

750

2SJ308

250

30

2SJ320
2SK1904
2SK1905

100

2SK1906

15

10

0.12/0.16

950

20

12

0.1/0.135

1230

15

20

0.06/0.08

1900

2SK2160

0.35/0.45

550

S-curve

2SK2161

0.25/0.35

700

correction(CS)

2SK2378

13

0.16/0.21

1100

switching

2SK2379

0.07/0.095

2400

0.09/0.12

1700

0.5/0.7

600

12

0.25/0.35

1250

18

0.12/0.16

2700

0.38/0.5

750

1.2/1.6

550

0.95/1.25

700

0.6/0.8

1150

4.7/6.0

350

0.5/0.7

600

Horizontal drive
Blanking period(CR)
switching
Switching power supply

200

20

20

2SK2864
2SK2010
2SK2011
2SK2012

4
250

2SK2108
2SK2617
2SK2618

500

2SK2620

Horizontal deflection
drive

2SK1456

900

2SK1921

250

30

2SK3092

1.8/2.3

320

2SK3094

5.5

0.92/1.2

580

2SK3096

400

2SK3098

0.68/0.87

750

12

0.43/0.55

1150

Horizontal deflection high breakdown

2SK2347

1000

20

0.6/0.8

3300

voltage/

2SK2348

1200

14

1.0/1.5

3000

ultrahigh-breakdown voltage

2SK2349

1500

10

1.5/2.5

2900

Package type

TO-220ML

ZP

TO-220ML

TO-220FI

TO-220
TP

TO-220

TO-3JML

14

For technical information,please contact:

JAPAN

SANYO ELECTRIC CO.,LTD. SEMICONDUCTOR

Tokyo Bldg.,1-10,1-chome,Ueno,Taito-ku,Tokyo 110 Japan
Tel:03-3837-6339 to 6342, Fax:03-3837-6377

HONGKONG

SANYO SEMICONDUCTOR(H.K.)CO.,LTD.
Room 612,Harbour Crystal Centre,100 Granville Road,Tsimshatsui East, Kowloon,Hong Kong
Tel:2311-1198, Tlx:56370 SSCHK HX, Fax:2311-0900

SHIN-NICHI ELECTRONICS DEVICE(H.K.)LTD.

Room 1912-13 Park-in Commercial Centre, 56 Dundas Street,Kowloon,Hong Kong
Tel:780-0359/770-1367, Tlx:49652 SNEDVHX, Fax:780-2401

CHINA

SANYO SEMICONDUCTOR(H.K.)CO.,LTD.
Shanghai Office : Room 2219. Ruijin Bldg. 205 Mandming Rd(S), Shanghai,P,R,C.

KOREA

SANYO SEMICONDUCTOR(H.K.)CO.,LTD.

Tel:6472-7674, Fax:6472-7556
Seoul Branch Room #1201 Samjung Bldg.,69-5,2-Ka,Taepyong-Ro,Chung-ku,Seoul,Korea
Tel:02-774-0296/774-1710/753-3415 Tlx:SILICON K22920, Fax:02-752-9790

PAIK YOUNG ELECTRONICS CO.,LTD.

162-1,2-Ka,Jangchung-Dong,Chung-ku,Seoul,Korea 3F,Taekwang Bldg.
Tel:02-277-8431/279-7857,7858, Tlx:PAIKYNG K23716, Fax:02-268-1158

YANG WON ENTERPRISE CO.,LTD.

700-5 Daelim-Dong Young Dongpo-ku,Seoul Korea
Tel:02-843-2888, Fax:02-846-6885

SINGAPORE

SANYO SEMICONDUCTOR(S) PTE.,LTD.

750D Chai Chee Road #05-04 to 06 Chai Chee Industrial Park Singapore 469004
Tel:442-1226, Tlx:SANSEMI RS23576, Fax:442-1280

SANYO SEMICONDUCTOR FIRST SALES CO.,LTD.

Singapore,Branch:221 Henderson Road #08-11 Henderson Industrial Park, Singapore 159557
Tel:275-4775/275-4776, Fax:275-4548

OS ELECTRONICS(S) PTE.,LTD.
33 Tannery Lane #05-00 Hoesteel Building Singapore 347789
Tel:746-7770, Fax:746-3500/746-1691

SHIN-NICHI ELECTRONICS(S) PTE.,LTD.

159 Sin Ming Road, #04-05 Amtech Building,Singapore 2057
Tel:552-8996, Fax:552-8830/552-8846

MALAYSIA

SANYO SEMICONDUCTOR(S) PTE.,LTD.

Malaysia Regional Office : 504, Block A, Level 5 Kelana business Centre,
Off subang Airport Highway 97 Jalan SS 7/2 , 47301 Petaling Jaya Selangor Darul Ehsan Malaysia
Tel:3-5828822, Fax:3-5828823

TAIWAN

SANYO SEMICONDUCTOR TAIPEI CO.,LTD.

Room #706, Chia Hsin Bldg, 96, Chung Shan Road,N.SEC.2,Taipei,Taiwan,R.O.C.,
Tel:2-551-5886, Fax:2-541-7649

SANYO SEMICONDUCTOR TAIPEI CO.,LTD.

Kaohsiung Office : Room 603, 61. Chung 3rd Road Kaohsiung R.O.C.,
Tel:7-201-5592, Fax:7-201-5593
TONG SAN ELECTRIC CO.,LTD.
Room 406,No.372 Lin Sen N.Road,Taipei,Taiwan, R.O.C.,
Tel;2-561-0381, Tlx:23588 TONSANCO, Fax:2-543-5431

O.S.SEMICONDUCTOR CO.,LTD.
3rd.Fl,No.145,Sec.2,Minsheng E.Road.,Taipei,Taiwan, R.O.C.
Tel:2-515-2286, Fax:2-516-2388

UNITED KINGDOM

SANYO SEMICONDUCTOR(EUROPE) GMBH

UK Office : Royal Caribbean House, Addlestone Road, Weybridge Surrey KT15 2UE, United Kingdom

GERMANY

SANYO SEMICONDUCTOR(EUROPE) GMBH

Tel:1932-844845, Fax:1932-845625
Frankfurter Strasse 1-5,65760 Eschborn/TS,Germany
Tel:06196-9260,Tlx:4072605 SSE D, Fax:06196-926-266,267

U.S.A.

SANYO SEMICONDUCTOR CORPORATION

New Jersey Office : 80 Commerce Drive, Allendale, NJ 07401,U.S.A.
Tel:201-825-8080, Tlx:135138 SANYOSEMI ALNJ, Fax:201-825-0163

SANYO SEMICONDUCTOR CORPORATION

California Office : 453 Ravendale Drive,Suite G, Mountain View,CA 94043,U.S.A.
Tel:415-960-8582, Fax:415-960-8591

SANYO SEMICONDUCTOR CORPORATION

Illinois Office : 900N. Arlington Heights Road Suite 360 Itasca, Illinois 60143,U.S.A.
Tel:630-775-0006, Fax:630-775-0060

SANYO SEMICONDUCTOR DISTRIBUTION(U.S.A.)CORPORATION

49 Walnut Street,Norwood,New Jersey 07648 U.S.A.
Tel:201-784-0303, Fax:201-784-8003

SANYO SEMICONDUCTOR CORPORATION,CORPORATION

San Diego Office : 2005 sanyo Avenue San Diego,CA 92173, U.S.A.
Tel:619-661-4134,1134, Fax:619-661-4881

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like,
the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
1. Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and
distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and
all damages, cost and expenses associated with such use:
2. Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on
SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of 'their officers and employees
jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 1997. Specifications and information herein are subject to change without notice.
Printed in Japan/April 1998 IM