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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 4, APRIL 2004

Arbitrary Dual-Band Components Using Composite

Right/Left-Handed Transmission Lines
I-Hsiang Lin, Student Member, IEEE, Marc DeVincentis, Member, IEEE, Christophe Caloz, Member, IEEE, and
Tatsuo Itoh, Fellow, IEEE

AbstractArbitrary dual-band microstrip components using

composite right/left-handed (CRLH) transmission lines (TLs)
are presented. Theory, synthesis procedure, and implementation
of the dual-band quarter-wave ( 4) CRLH TL are presented.
Arbitrary dual-band operation is achieved by the frequency offset
and the phase slope of the CRLH TL. The frequency ratio of the
two operating frequencies can be a noninteger. The dual-band 4
open/short-circuit stub, dual-band branch-line coupler (BLC),
and dual-band rat-race coupler (RRC) are also demonstrated. The
performances of these dual-band components are demonstrated
by both simulated and measured results. Insertion loss is larger
than 23 dB for the shunt 4 CRLH TL open-circuit stub and less
4 CRLH TL short-circuit stub at
than 0.25 dB for the shunt
each passband. The dual-band BLC exhibits 21 and 31 larger
than 4.034 dB, return losses larger than 17 dB, isolations larger
than 13 dB, phase differences 90
1.5 , and gain imbalance less
than 0.5 dB at each passband. The dual-band RRC exhibits 21
and 31 larger than 4.126 dB, return losses larger than 12 dB,
isolations larger than 30 dB, phase difference 180
4 , and gain
imbalance less than 0.2 dB at each passband.
Index TermsBaluns, directional couplers,
left-handed (LH), transmission lines (TLs).

dual-band,

I. INTRODUCTION

ECENTLY, left-handed (LH) materials have gained significant attention in the microwave community [1][4].
LH materials are so termed because of the LH triad formed by
the electric field, magnetic field, and wave vector, causing the
phase and group velocities to be antiparallel [5]. The first experimental realizations of LH materials were demonstrated in [1]
and [2]. A theoretical model and practical implementation of an
artificial LH transmission line (TL) using interdigital capacitors
and short-circuit stub inductors were proposed in [3]. A two-dimensional LH structure implemented by surface-mount-technology (SMT) lumped elements (LEs) was presented in [4].
In this paper, LH TLs are shown to be useful in the design
of arbitrary dual-band microwave components. Dual-band components are beneficial to reduce the number of circuit components in modern wireless communication systems having two
frequency bands. In wireless front-end circuits, branch-line couManuscript received July 15, 2003; revised January 8, 2004. This work was
supported by the Multiuniversity Research Initiative under the Scalable and
Reconfigurable Electromagnetic Metamaterials and Devices program, by the
Department of Defense under Contract N00014-01-1-0803, and monitored by
the U.S. Navy/Office of Naval Research.
I.-H. Lin, C. Caloz, and T. Itoh are with the Electrical Engineering
Department and Microwave Electronics Laboratory, University of California at
Los Angeles, Los Angeles, CA 90095 USA (e-mail: ihlin@ee.ucla.edu).
M. DeVincentis is with the Luxim Cooperation, Los Angeles, CA 90405
USA.
Digital Object Identifier 10.1109/TMTT.2004.825747

Fig. 1. T-type unit cells of artificial RH and LH TLs, respectively. (a) RH TL.
(b) LH TL.

plers (BLCs) and rat-race couplers (RRCs) are widely used for
dividing an input signal into two signals having 90 and 180
phase difference, respectively. The conventional BLC and conconventional TLs, which are
ventional RRC consisting of
referred to as right-handed (RH) TLs, only operate at a funand at its odd harmonics [6][8]. The
damental frequency
second operating frequency of a conventional microwave direc. Thus, RH
tional coupler is usually the first odd harmonic or
TLs are not practical in dual-band configurations since current
wireless standards do not employ operating frequencies separated by a factor of three. This limitation can be overcome by
implementing components consisting of composite right/lefthanded (CRLH) TLs. The dual-band components presented in
this paper have a first operating frequency at the fundamental
frequency , and a variable second operating frequency, which
.
is not necessarily
The CRLH TL, which is the combination of an LH TL and a
RH TL, is proposed in [3] and [9]. The equivalent LE model of
the LH TL exhibits positive phase response (phase lead). On the
other hand, the RH TL has negative phase response (phase lag).
TL,
These attributes are applied to the design of a dual-band
in which the phase response of the CRLH TL is manipulated to
yield electrical lengths of 90 at two arbitrary frequencies. In
the phase response of a CRLH TL, the zero phase frequency
and phase slope can be adjusted arbitrarily. This provides the
additional degree of freedom necessary to realize an arbitrary
TL is a fundamental
dual-band frequency response. The
building block of microwave resonant circuits such as the BLC
and RRC. Therefore, the second operating frequencies of the
short/open-circuit stub, BLC, and RRC can be arbitrarily
designed by replacing their
RH TLs with
CRLH TLs.
II. COMPOSITE RH/LH TLs
A. LH TL and RH TL
Here, artificial TLs are implemented by LEs. The unit cells
of the artificial LE implementation of the RH TLs and the LH
TLs are shown in Fig. 1 [10].
and
are inductance and

0018-9480/04$20.00 2004 IEEE

LIN et al.: ARBITRARY DUAL-BAND COMPONENTS USING CRLH TLs

1143

capacitance, respectively, in the unit cells of the equivalent LE

and
are inductance and capacimodel of the RH TL.
tance, respectively, in the unit cells in the equivalent LE model
of the LH TL.
The artificial TLs are obtained by cascading unit cells, provided that the phase shift induced by a unit cell is much smaller
, keeping with the infinitesimal approximation assumpthan
tion. is larger than the minimum integer for ladder approximation, as calculated in [10].
The LH TL is the electrical dual of the RH TL, such that
the positions of the inductors and capacitors have been interchanged. The total inductance and capacitance of each unit cell
are the same. The phase response of the two unit cells of the artificial RH and LH TL in Fig. 1 are

(1a)

Fig. 2. Typical phase responses of an ideal RH TL, LH TL, and CRLH TL.

Fig. 3. Phase responses of the RH TL and CRLH TL, which both have
electrical lengths of 90 at f .

(5)

The phase response of an ideal CRLH TL is shown in Fig. 2,

which is the superposition of phase responses of an ideal LH TL
and an ideal RH TL. At low frequencies, the CRLH TL phase
curve approaches to the LH TL phase curve because the immitand
are negligible, which, according to (1b), cortances
responds to the positive phase response (phase lead). At high
frequencies, the CRLH TL phase curve approaches to the RH
and
are negTL phase curve because the immittances
ligible, which, according to (1a), corresponds to the negative
phase response (phase lag). As a consequence, the CRLH TL
phase curve crosses the zero-phase axis (zero electrical length)
with an offset at a transition frequency between the LH and RH
ranges. The offset from zero frequency provides an additional
degree of freedom with respect to the RH TL, in which only the
phase slope can be controlled. Therefore, the CRLH TL phase
curve can intercept a desired pair of phases at any arbitrary pair
of frequencies for dual-band operation.
An LE-implemented CRLH TL is the series combination of an
LE-implemented LH TL and an LE-implemented RH TL. Unlike
the ideal case, a LE-implemented CRLH TL has innate LH and
RH cutoff frequencies as [10]

(6)

(8)

The RH TL has a negative phase response (phase lag) pro, whereas the LH TL has a positive phase
portional to
[10].
response (phase lead) proportional to

(9)

(1b)
where the subscripts and refer to RH and LH, respectively,
and
are the characteristic impedances defined as
and
(2)
The phase responses of the artificial TL are
(3)
(4)
and
are much smaller than
, the LE
If
approach will approximate the infinitesimal model. Thus, the
phase response of the artificial TLs can be further simplified as
[10]

respectively. Nevertheless, the infinitesimal model in the ideal

case provides a first-order approximation of the phase response.

B. CRLH TL
Unit cell lengths of ideal TLs are infinitesimal. An ideal
CRLH TL [3], [11] is the series combination of an ideal LH
TL and an ideal RH TL, both of which do not have cutoff
frequencies, resulting in the phase response
(7)
where the index

denotes CRLH.

III. DUAL-BAND
A.

CRLH TL

CRLH TL

RH TL phase curve in Fig. 3 is a straight line

Since the
(assuming zero dispersion), the opfrom zero frequency to
erating frequency at 90 dictates the next usable frequency
at 270 . On the other hand, a
CRLH TL has an electrical length of
and
at two arbitrary operating frequen-

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 4, APRIL 2004

to satisfy the approximation for the LE

Step 2) Choose
, i.e.,
from
approach
(4).
product from
Step 3) Use and to determine the
(16).
and
with the
product and the
Step 4) Solve for
in (2) to obtain
chosen characteristic impedance
Fig. 4. Photograph and schematic of the CRLH TL used for the proposed
design.

cies since the frequency offset and phase slope are freely adjustable, as will be explained in Section II-B.
B. Arbitrary Dual-Band Design
and
If the operating frequencies are chosen to be
shown in Fig. 3, the phase response will be 90 at
270 at . The phase response of the CRLH TL at
can be written as

, as
and
and

(19)
or
to obtain the electrical length of the
Step 5) Use
by using
RH TL and, hence, its physical length
standard microstrip line formulas.
from (8). If
, the design is
Step 6) Calculate
in Step 2)
complete. Otherwise, choose a larger
and repeat Steps 3)6).
In practice, the self-resonant frequency (SRF) of SMT chip
components and parasitic effects of soldering and vias set a
high-frequency limit to the design. However, the effect of SRF
is the dominant one in this type of design.

(10)
IV.
(11)
with
(12)
where is not necessarily an integer. From (5)(7), (10) and
(11) can be written as the following simpler approximate expressions:
(13)
(14)
(15)
(16)
C. Implementation
A photograph and schematic of the CRLH TL are shown in
Fig. 4. The LH TL section consists of two T-type unit cells with
and shunt inductors of value
,
series capacitors of value
which are implemented by SMT chip components. Here, the RH
TL sections are simply two microstrip lines on each side of the
LH section. For a more compact design, the RH TL sections
could also be implemented with SMT components.
The synthesis procedure for an arbitrary pair of frequencies
and
is as follows.
Step 1) For given
and , solve for and in (13) and
(14) to obtain
(17)

(18)

CRLH OPEN/SHORT-CIRCUIT STUB

The
open- and short-circuit stubs are widely used as
harmonic terminations. In the conventional case, the
RH TL open-circuit stub terminates signals with frequencies of
, and the
RH TL
short-circuit stub terminates signals with frequencies of
, where is an integer.
CRLH TL is designed so that the phase response is
A
90 at
and 270 ( 90 ) at , where
is not necesCRLH open-circuit stub
sarily an integer multiple of . A
terminates signals at frequencies of , , and other higher freCRLH short-circuit stub has high impedances
quencies. A
at frequencies of , , and other higher frequencies. Higher
because of the nonfrequencies are not integer multiples of
CRLH
linear phase response of the LH TL. Therefore, the
TL provides more flexibility for terminating harmonics.
CRLH TLs are simulated
With a view to higher accuracy,
with thru-reflect-line (TRL)-calibrated measured -parameters
for the LH TL sections and microstrip-line mathematical model
for RH TL sections. All circuits are fabricated on Duroid6510
substrates with a dielectric constant of 10.2 and a thickness of
1.27 mm. All RH TLs with 50- characteristic impedance are
implemented with microstrip lines with a width of 1.2 mm on
this substrate. In this paper, the sizes of all SMT chip components, provided by the Murata Manufacturing Company Ltd.,
Kyoto, Japan, are 1.6 mm 0.8 mm (0603).
The design procedure discussed in Section III-C was used to
,
, and , where and are chosen
generate values of
as 880 and 1670 MHz, respectively. The frequency ratio is 1.9.
However, there are limited available values of inductance/capacitance of SMT chip components, and parasitic effects of the
SMT chip components have to be considered. Therefore, the
and
in the fabricated circuit are slightly difvalues of
ferent from the design values in (19). The designed and availand
in the
CRLH TL open/short-cirable values of
cuit stubs are compared in Table I. The comparison in Table I
indicates the synthesis procedure gives close estimated values of

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1145

TABLE I
DESIGNED VALUES FROM (19) AND AVAILABLE VALUES
OF L AND C IN THE =4 CRLH OPEN/SHORT-CIRCUIT STUB

TABLE II
INFORMATION

ON THE CHIP COMPONENTS IN THE

OPEN/SHORT-CIRCUIT STUB

=4 CRLH

Fig. 7. Simulated and measured S -parameters of the =4 CRLH open stub in
Fig. 5.

Fig. 5. Photograph and schematic of the fabricated test circuit for the
CRLH open-circuit stub.

=4

Fig. 8. Simulated and measured S -parameters of the =4 CRLH short stub in
Fig. 6.

Fig. 9. Conceptual schematics of the dual-band BLC: (a) at f and (b) at f .

The characteristic impedance Z is 50
.
Fig. 6. Photograph and schematic of the fabricated test circuit for the
CRLH short-circuit stub.

=4

and
. Parasitic inductances of the vias are also expected
in the
CRLH short-circuit stub. Deto result in shorter
tails of the SMT chip components used for the proposed design
are listed in Table II.
The test circuits are fabricated and measured. In the test cirCRLH open/short-circuit stubs are shunt connected
cuit, the
to a microstrip line. Photographs of the circuits are shown in
Figs. 5 and 6. The simulated and measured results are shown
CRLH
in Figs. 7 and 8. The measurement shows that the
open-circuit stub creates two stopbands at 890 and 1670 MHz,
CRLH short-circuit stub creates two passbands
whereas the

at 870 and 670 MHz. The two stopbands in Fig. 7 and the two
passbands in Fig. 8 correspond to and very well.
V. DUAL-BAND BLC
A. Principle of Dual-Band BLC
A dual-band BLC is obtained by replacing the
RH TLs
CRLH TLs, which have phase
in a conventional BLC with
responses, as shown in Fig. 3, working at designated frequencies
and [12]. The conceptual schematics of the dual-band BLC
are shown in Fig. 9. At , the dual-band BLC works in the same
way as the conventional BLC. At , the phase response of each
branch line becomes 270 . From the evenodd-mode analysis
of the structure in Fig. 9(b) [8], the only difference between two

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 4, APRIL 2004

Fig. 11. Simulated S -parameters of the BLC of Fig. 10.

Fig. 10. Photograph of the new BLC and schematics of the implemented LH
TL sections. The characteristic impedance Z is 50
.
TABLE III
INFORMATION ON THE CHIP COMPONENTS IN THE DUAL-BAND BLC

Fig. 12. Measured S -parameters of the BLC of Fig. 10.

circuits in Fig. 9(a) and (b) is the sign of the phase difference
between the output signals of ports 2 and 3.

TABLE IV
PERFORMANCES OF THE BLC IN THE FIRST PASSBAND

B. Implementation
A photograph of the implemented circuit with dimension of
81.8 mm 71.3 mm is shown in Fig. 10 with port orientation
indicated as well. The two operating frequencies are chosen as
MHz and
MHz. These two frequencies
are chosen so that the first frequency is in the global system
for mobile communication (GSM) 900 base station transmit frequency band, and the second frequency is the GSM 1800 mobile
phone transmit frequency band. The ratio between these two frequencies is 1.9. The reactances of the chip inductors and susceptances of the chip capacitors vary with frequency, causing variations in the characteristic impedance of the LH TL that result
in an amplitude imbalance between two output ports. In order
to compensate for these effects, a tuning stub is added to the
( 35 ) CRLH TLs and is included in the simulation. The manufacturers part numbers for the chip components
are list in Table III. The tolerance is 0.3 nH and 0.25 pF of
a chip inductor and chip capacitor, respectively. The RH TLs
are implemented with miwith characteristic impedance
crostrip lines with a width of 2.3 mm.
C. Simulation and Measurement
The four-port BLC is measured with an Agilent 8510C
network analyzer. Neither time averaging, nor time gating is

TABLE V
PERFORMANCES OF THE BLC IN THE SECOND PASSBAND

used in the measurement. The simulated and measured results

are shown in Figs. 11 and 12, respectively. The performances
in both passbands are summarized in Tables IV and V. In the
is shifted to 920 MHz, and
is shifted to
measurement,

LIN et al.: ARBITRARY DUAL-BAND COMPONENTS USING CRLH TLs

1147

Fig. 15. Photograph of the new RRC and the schematic of the implemented
LH TL sections. The characteristic impedance Z is 50
.
Fig. 13. Phase difference between S

and S

of the BLC of Fig. 10.

TABLE VI
INFORMATION ON THE CHIP COMPONENTS IN THE RRC

Fig. 14. Conceptual schematics of the dual-band RRC: (a) at f and (b) at f .
The characteristic impedance Z is 50
.

1740 MHz. In both simulation and measurement, the phase

and
are 90 at
and , as
differences between
shown in Fig. 13. Quadrature phase differences are obtained
with errors less than 1.5 at and . The amplitude imbalance
and
is less than 0.5 dB in both passbands,
between
which means that the incident power is evenly divided between
is larger than
ports 2 and 3. The 1-dB bandwidth
3.4%, where it is defined as the frequency range in which the
and
are larger
amplitude imbalance is less than 1 dB,
than 5 dB, isolation/return loss is larger than 10 dB, and
quadrature phase error is less than 11.1%.
VI. DUAL-BAND RRC
A. Principle of Dual-Band RRC
RH TLs
A dual-band RRC is obtained by replacing the
in a conventional RRC with
CRLH TLs working at desand . The conceptual schematics
ignated frequencies of
of the dual-band RRC are shown in Fig. 14. The RRC can be
TL
considered as a loop consisting of six segments of a
with characteristic impedances of
. At , the dual-band
RRC works in the same way as the conventional RRC. At ,
the phase responses of each one-sixth become 270 . From
the even-odd mode analysis in [8], the structure in Fig. 14(b)
can be determined to work in the same way as the structure in
Fig. 14(a).
B. Implementation
A photograph of the implemented circuit with a dimension of
110.2 mm 100.9 mm is shown in Fig. 15 with port orientation

Fig. 16.

Simulated S -parameters of the RRC of Fig. 15.

indicated as well. The two operating frequencies are chosen as

MHz and
MHz. These two frequencies
are chosen to have a ratio of 2.0 for use in this demonstration.
The manufacturers part numbers for the chip components are
listed in Table VI. The tolerance is 0.3 nH and 0.6 pF for a
chip inductor and chip capacitor, respectively.
C. Simulation and Measurement
The measurement setup is the same as it is in Section V-C.
The simulated and measured results are shown in Figs. 16 and
17, respectively. The performances in both passbands are summarized in Tables VII and VIII. In the measurement, is shifted
is shifted to 3043 MHz. In both simulato 1544 MHz, and
and
tion and measurement, the phase differences between
are 180 at
and , as shown in Fig. 18. Half-wave
phase difference is obtained with errors less than 4 . The amand
is less than 0.29 dB in
plitude imbalance between
is same as the BLC
both passbands. The definition of
in Section V-C, where phase error is less than 10 out of 180
in the RRC. In both passbands,
is larger than 5%.

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 4, APRIL 2004

VII. CONCLUSION

Fig. 17.

Measured S -parameters of the RRC of Fig. 15.

TABLE VII
PERFORMANCES OF THE RRC IN THE FIRST PASSBAND

In this paper, novel arbitrary dual-band microwave compoCRLH TLs have been presented. Both the
nents based on
theory and implementation of these components have been developed. Arbitrary dual-band operation is possible because the
phase response of the CRLH TL can be adjusted by choosing
both the frequency offset and phase slope.
CRLH open-circuit stub terminates signals
The shunt
CRLH
at two arbitrary frequencies, whereas the shunt
short-circuit stub creates two arbitrary passbands. Thus, more
flexibility in harmonic termination techniques is acquired.
Novel arbitrary dual-band BLC and RRC were proposed by
RH TLs with
CRLH TLs. The
simply replacing the
size of these circuits may be reduced by replacing the microstrip lines with lumped-distributed elements [13]. A method
to develop one single hybrid having two operating frequencies
CRLH TL can be utilized in
has been proposed. The
TLs. Thus, many
many microwave components that have
applications may be candidates for dual-band operation.
The operating frequencies of the prototypes were mainly limited by the SRF of the SMT chip components. Monolithic-microwave integrated-circuit (MMIC) implementations of the proposed BLC/RRC may be useful in many dual-band applications
of modern mobile communication and wireless local area network (WLAN) standards since MMIC passive components typically have much higher self-resonant frequencies
ACKNOWLEDGMENT

TABLE VIII
PERFORMANCES OF THE RRC IN THE SECOND PASSBAND

The authors would like to thank T. Kaneko, Murata Manufacturing, Kyoto, Japan, for offering chip components.
REFERENCES

Fig. 18.

Phase difference between S

and S

of the RRC of Fig. 15.

[1] D. R. Smith, W. J. Padilla, D. C. Vier, S. C. Nemat-Nassser, and

S. Schultz, Composite medium with simultaneously negative permeability and permittivity, Phys. Rev. Lett., vol. 84, no. 18, pp.
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[2] R. A. Shelby, D. R. Smith, and S. Schultz, Experimental verification of
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[8] D. M. Pozar, Microwave Engineering, 2nd ed. New York: Wiley, 1998,
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structures and microstrip realization of a low-loss broadband LH filter,
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[12] I.-H. Lin, C. Caloz, and T. Itoh, A branch line coupler with two arbitrary operating frequencies using left-handed transmission lines, in
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I-Hsiang Lin (S01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, R.O.C., in 2001, the M.S. degree
in electrical engineering from the University of California at Los Angeles (UCLA), in 2003, and is currently working toward the Ph.D. degree in electrical
engineering at UCLA.
His research interests include LH metamaterials
and microwave/millimeter-wave circuit designs.

Marc DeVincentis (S99M03) was born in

Rahway, NJ, in 1977. He received the B.S. degree
in electrical engineering from the University of
Virginia, Charlottesville, in 1999, and the M.S. and
Doctor of Philosophy degrees from the University
of California at Los Angeles, in 2002 and 2003,
respectively.
He is currently with the Luxim Corporation,
Los Angeles, CA. He has authored or coauthored
over ten refereed journal and conference papers.
His research activities include microwave power
amplifiers, high-power oscillators, and microwaveplasma interactions. His
research on microwave and millimeter-wave electronics has been supported by
the Virginia Space Grant Consortium and the Department of Defense through
the National Defense Science and Engineering Graduate Fellowship.

Christophe Caloz (S99M03) was born in Sierre,

Switzerland, in 1969. He received the Diplme
dIngnieur en lectricit and Ph.D. degree from
the cole Polytechnique Fdrale de Lausanne
(EPFL), Lausanne, Switzerland, in 1995 and 2000,
respectively.
He was with the EPFL, where he developed new
numerical approaches of photonic crystals by combining solid state physics and phased arrays principles. He is currently a Research Engineer with the
University of California at Los Angeles (UCLA). His
recent research includes multilayer and anisotropic photonic bandgap (PBG)
structures, components and circuits based on novel CRLH concepts, and metamaterials for microwave circuits and antennas applications. He has authored
more than 70 papers in refereed journals and international conferences.

1149

Tatsuo Itoh (S69M69SM74F82) received the

Ph.D. degree in electrical engineering from the University of Illinois at Urbana-Champaign, in 1969.
From September 1966 to April 1976, he was with
the Electrical Engineering Department, University
of Illinois at Urbana-Champaign. From April
1976 to August 1977, he was a Senior Research
Engineer with the Radio Physics Laboratory, SRI
International, Menlo Park, CA. From August 1977
to June 1978, he was an Associate Professor with
the University of Kentucky, Lexington. In July 1978,
he joined the faculty at The University of Texas at Austin, where he became
a Professor of Electrical Engineering in 1981 and Director of the Electrical
Engineering Research Laboratory in 1984. During the summer of 1979, he
was a Guest Researcher with AEG-Telefunken, Ulm, Germany. In September
1983, he was selected to hold the Hayden Head Centennial Professorship of
Engineering at The University of Texas at Austin. In September 1984, he was
appointed Associate Chairman for Research and Planning of the Electrical
and Computer Engineering Department, The University of Texas at Austin. In
January 1991, he joined the University of California at Los Angeles (UCLA)
as Professor of Electrical Engineering and Holder of the TRW Endowed Chair
in Microwave and Millimeter Wave Electronics. He was an Honorary Visiting
Professor with the Nanjing Institute of Technology, Nanjing, China, and at the
Japan Defense Academy. In April 1994, he was appointed an Adjunct Research
Officer with the Communications Research Laboratory, Ministry of Post and
Telecommunication, Japan. He currently holds a Visiting Professorship with
The University of Leeds, Leeds, U.K. He has authored or coauthored 310
journal publications, 640 refereed conference presentations, and has written 30
books/book chapters in the area of microwaves, millimeter waves, antennas,
and numerical electromagnetics. He has generated 60 Ph.D. students.
Dr. Itoh is a member of the Institute of Electronics and Communication
Engineers of Japan, and Commissions B and D of USNC/URSI. He served
as the editor of the IEEE TRANSACTIONS ON MICROWAVE THEORY AND
TECHNIQUES (19831985). He serves on the Administrative Committee of
the IEEE Microwave Theory and Techniques Society (IEEE MTT-S). He
was vice president of the IEEE MTT-S in 1989 and president in 1990. He
was the editor-in-chief of IEEE MICROWAVE AND GUIDED WAVE LETTERS
(19911994). He was elected an Honorary Life Member of the IEEE MTT-S
in 1994. He was elected a member of the National Academy of Engineering in
2003. He was the chairman of the USNC/URSI Commission D (19881990)
and chairman of Commission D of the International URSI (19931996). He
is chair of the Long Range Planning Committee of the URSI. He serves on
advisory boards and committees of a number of organizations. He has been
the recipient of numerous awards including the 1998 Shida Award presented
by the Japanese Ministry of Post and Telecommunications, the 1998 Japan
Microwave Prize, the 2000 IEEE Third Millennium Medal, and the 2000 IEEE
MTT-S Distinguished Educator Award.